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    NPN TRANSISTOR 450V 10MA Search Results

    NPN TRANSISTOR 450V 10MA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8515 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation

    NPN TRANSISTOR 450V 10MA Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    20MH

    Abstract: FMMT459 FMMT459TA FMMT459TC
    Text: FMMT459 450V SILICON NPN HIGH VOLTAGE SWITCHING TRANSISTOR SUMMARY VCEO=450V; VCE sat = 100mV; IC= 150mA DESCRIPTION This new high voltage tranistor provides users with very effiecient performance combining low VCE (sat) and Hfe to give extremely low on state


    Original     		FMMT459 100mV; 150mA 150mA 625mW 20MH FMMT459 FMMT459TA FMMT459TC PDF

    NTE397

    Abstract: transistor NTE396 NTE396
    Text: NTE396 Silicon NPN Transistor Power Amplifier & High Speed Switch Compl to NTE397 Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450V


    Original     		NTE396 NTE397) 50MHz NTE397 transistor NTE396 NTE396 PDF

    ZXTN08400BFF

    Abstract: ZXTN08400BFFTA ZXTP08400BFF sot23 6 device Marking
    Text: ZXTN08400BFF 400V, SOT23F, NPN medium power high voltage transistor Summary BVCEX > 450V BVCEO > 400V BVECO > 6V IC cont = 0.5A VCE(sat) < 175mV @ 500mA PD = 1.5W Complementary part number ZXTP08400BFF Description C This NPN transistor has been designed for applications requiring high


    Original     		ZXTN08400BFF OT23F, 175mV 500mA ZXTP08400BFF OT23F ZXTN08400BFF ZXTN08400BFFTA ZXTP08400BFF sot23 6 device Marking PDF

    TRANSISTOR MARKING 1d5

    Abstract: No abstract text available
    Text: ZXTN08400BFF 400V, SOT23F, NPN medium power high voltage transistor Summary BVCEX > 450V BVCEO > 400V BVECO > 6V IC cont = 0.5A VCE(sat) < 175mV @ 500mA PD = 1.5W Complementary part number ZXTP08400BFF Description C This NPN transistor has been designed for applications requiring high


    Original     		ZXTN08400BFF OT23F, 175mV 500mA ZXTP08400BFF OT23F TRANSISTOR MARKING 1d5 PDF

    Untitled

    Abstract: No abstract text available
    Text: TS13003A High Voltage NPN Transistor TO-126 PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 450V BVCBO 700V IC VCE SAT Features 2A 0.5V @ IC=1A, IB=0.25A Block Diagram ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type


    Original     		TS13003A O-126 TS13003ACK 50pcs PDF

    Transistor A14

    Abstract: No abstract text available
    Text: TS13002HV High Voltage NPN Transistor TO-92 PRODUCT SUMMARY Pin Definition: 1. Emitter 2. Collector 3. Base BVCEO 450V BVCBO 900V IC 0.8A VCE SAT Features ● High Voltage ● High Speed Switching 0.6V @ IC=0.2A, IB=0.04A Block Diagram Structure ● Silicon Triple Diffused Type


    Original     		TS13002HV TS13002HVCT Transistor A14 PDF

    Untitled

    Abstract: No abstract text available
    Text: TS13002HV High Voltage NPN Transistor TO-92 PRODUCT SUMMARY Pin Definition: 1. Emitter 2. Collector 3. Base BVCEO 450V BVCBO 900V IC 0.8A VCE SAT Features ● High Voltage ● High Speed Switching 0.6V @ IC=0.2A, IB=0.04A Block Diagram Structure ● Silicon Triple Diffused Type


    Original     		TS13002HV TS13002HVCT PDF

    NPN Transistor 450v 1A To-92

    Abstract: No abstract text available
    Text: TS13003A High Voltage NPN Transistor TO-126 PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 450V BVCBO 700V IC VCE SAT Features 2A 0.5V @ IC=1A, IB=0.25A Block Diagram ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type


    Original     		TS13003A O-126 TS13003ACK NPN Transistor 450v 1A To-92 PDF

    2SC5351

    Abstract: No abstract text available
    Text: TO SH IBA 2SC5351 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5351 HIGH SPEED SWITCHING APPLICATIONS FOR BATTERY CHARGER AND POWER SUPPLY • • High Voltage : V ç;e o = 450V TTicrVi Snpprl tj, = o.-S^s Max. , tf*= 0.3/^s (Max.) (Iq = 0.8A) MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		2SC5351 2SC5351 PDF

    2SC5351

    Abstract: No abstract text available
    Text: TOSHIBA 2SC5351 2SC5351 TO SHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm HIGH SPEED SW ITCHING APPLICATIONS FOR BATTERY CHARGER 8.0 ± 0.2 A N D POWER SUPPLY • • High Voltage : V ; = 450V High Speed : tr = 0.5/¿s Max. , tf=0.3/¿s (Max.) (Iç; = 0.8A)


    OCR Scan     		2SC5351 961001EAA1 2SC5351 PDF

    2SC5351

    Abstract: toshiba a100
    Text: TO SH IBA 2SC5351 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5351 Unit in mm HIGH SPEED SWITCHING APPLICATIONS FOR BATTERY CHARGER AND POWER SUPPLY • • 8.0 ±0.2 High Voltage : V ç;e o = 450V TTicrVi Snpprl tj, = o.-S^s Max. , tf*= 0.3/^s (Max.) (Iq = 0.8A)


    OCR Scan     		2SC5351 2SC5351 toshiba a100 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC5351 TOSHIBA TO SH IBA TRANSISTOR i SILICON NPN TRIPLE DIFFUSED TYPE <;r >5 3 R1 HIGH SPEED SWITCHING APPLICATIONS FOR BATTERY CHARGER A N D POW ER SUPPLY t • High Voltage : V ç e O~450V High Speed : tr = 0.5/¿s Max. , tf= 0.3//s (Max.) (Iç = 0.8A)


    OCR Scan     		2SC5351 2SC5351 PDF

    Untitled

    Abstract: No abstract text available
    Text: SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N3439CSM4 / 2N3439CSM4R 2N3440CSM4 / 2N3440CSM4R • High Voltage • Hermetic Ceramic Surface Mount Package. • Ideally suited for drivers in high-voltage low current inverters, switching and series regulators. •


    Original     		2N3439CSM4 2N3439CSM4R 2N3440CSM4 2N3440CSM4R 2N3439 MO-041BA) 2N3439CSM4 2N3440CSM4 PDF

    Untitled

    Abstract: No abstract text available
    Text: SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N3439CSM4 / 2N3439CSM4R 2N3440CSM4 / 2N3440CSM4R • High Voltage • Hermetic Ceramic Surface Mount Package. • Ideally suited for drivers in high-voltage low current inverters, switching and series regulators. •


    Original     		2N3439CSM4 2N3439CSM4R 2N3440CSM4 2N3440CSM4R 2N3439 2N3440 800mW MO-041BA) PDF

    Untitled

    Abstract: No abstract text available
    Text: SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N3439C3A / 2N3440C3A 2N3439C3B / 2N3440C3B 2N3439C3C / 2N3440C3C • High Voltage • Hermetic Ceramic Surface Mount Package. • Variant B to MIL-PRF-19500/368 outline • Ideally suited for drivers in high-voltage low current


    Original     		2N3439C3A 2N3440C3A 2N3439C3B 2N3440C3B 2N3439C3C 2N3440C3C MIL-PRF-19500/368 2N3439 450ons MO-041BA) PDF

    NTE225

    Abstract: No abstract text available
    Text: NTE225 Silicon NPN Transistor Linear Amplifier and High Speed Switch Description: The NTE225 is a silicon NPN transistor in a TO39 type package with flange designed for industrial and commercial equipment. Typical applications include high voltage differential and operational amplifiers, high voltage inverters, and high voltage, low current switching and series regulators.


    Original     		NTE225 NTE225 PDF

    LCC3 weight

    Abstract: 2N3439 2N3439CSM4
    Text: SEME 2N3439CSM4 LAB HIGH VOLTAGE, MEDIUM POWER, NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR 1.40 ± 0.15


    Original     		2N3439CSM4 LCC3 weight 2N3439 2N3439CSM4 PDF

    NPN Transistor 450v 10mA

    Abstract: No abstract text available
    Text: Illl w . Illl 2N3439CSM4 SEME LAB HIGH VOLTAGE, MEDIUM POWER, NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA D im e nsio ns in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR


    OCR Scan     		2N3439CSM4 NPN Transistor 450v 10mA PDF

    2N3439

    Abstract: 2N3439DCSM 2N3440 2N3440DCSM
    Text: 2N3439DCSM 2N3440DCSM SEME LAB HIGH VOLTAGE, MEDIUM POWER, NPN DUAL TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES 3 1 4 A 6 5 0.23 rad. (0.009) • DUAL SILICON PLANAR EPITAXIAL NPN


    Original     		2N3439DCSM 2N3440DCSM 2N3439 2N3440 2N3439 2N3439DCSM 2N3440 2N3440DCSM PDF

    Untitled

    Abstract: No abstract text available
    Text: IMI = l t = «= = ìvx = 2N3439DCSM 2N3440DCSM 5 E IVI E LAB HIGH VOLTAGE, MEDIUM POWER, NPN DUAL TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES 2 .29 ± 0.20


    OCR Scan     		2N3439DCSM 2N3440DCSM 2N3439 2N3440 PDF

    voltage regulators 300v dc

    Abstract: LCC3 transistors 1A 300V TRANSISTOR NPN Transistor 450v 1A npn transistors 300V 0,5a transistor 5w
    Text: 2N3439 2N3440 HIGH VOLTAGE NPN TRANSISTORS MECHANICAL DATA Dimensions in mm inches 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) FEATURES 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. • DUAL SILICON PLANAR EPITAXIAL NPN TRANSISTOR • HIGH VOLTAGE 0.89


    Original     		2N3439 2N3440 2N3439" 2N3439CECC 2N3439CSM4 2N3439CSM4-JQR-B 2N3439CSM4R 10/20m voltage regulators 300v dc LCC3 transistors 1A 300V TRANSISTOR NPN Transistor 450v 1A npn transistors 300V 0,5a transistor 5w PDF

    2N3439

    Abstract: 2N3439DCSM 2N3440 2N3440DCSM 2N3440d
    Text: 2N3439DCSM 2N3440DCSM HIGH VOLTAGE, MEDIUM POWER, NPN DUAL TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES 3 1 4 A 6 5 6.22 ± 0.13 (0.245 ± 0.005) 0.23 rad.


    Original     		2N3439DCSM 2N3440DCSM 2N3439 2N3439DCSM 2N3440 2N3440DCSM 2N3440d PDF

    LCC3 weight

    Abstract: TRANSISTOR 023 2N3439 2N3439CSM4 2N3440 2N3440CSM4
    Text: 2N3439CSM4 2N3440CSM4 SEME LAB HIGH VOLTAGE, MEDIUM POWER, NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES 1.40 ± 0.15 (0.055 ± 0.006) 5.59 ± 0.13


    Original     		2N3439CSM4 2N3440CSM4 LCC3 weight TRANSISTOR 023 2N3439 2N3439CSM4 2N3440 2N3440CSM4 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N3439DCSM 2N3440DCSM HIGH VOLTAGE, MEDIUM POWER, NPN DUAL TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES 3 1 4 A 6 5 6.22 ± 0.13 (0.245 ± 0.005) 0.23 rad.


    Original     		2N3439DCSM 2N3440DCSM PDF