EE16
Abstract: 5A transistor 2SD826 DC-DC EE13 ITR09924 core EE16 60309E EE16 9V transistor C 5386 EE16 case
Text: 2SD826 Ordering number : EN538F SANYO Semiconductors DATA SHEET 2SD826 NPN Epitaxial Planar Silicon Transistor 20V / 5A, Transistor for Flash Circuit Features • • • Low saturation voltage. High hFE. Large current capacity. Specifications Absolute Maximum Ratings at Ta=25°C
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2SD826
EN538F
100ms,
150se.
EE16
5A transistor
2SD826
DC-DC EE13
ITR09924
core EE16
60309E
EE16 9V
transistor C 5386
EE16 case
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equivalent bu806
Abstract: bu806 equivalent BU806
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •High Voltage: VCEV= 400V Min ·Low Saturation Voltage: VCE(sat)= 1.5V(Max)@ IC= 5A APPLICATIONS ·Designed for use in horizontal deflection circuits in TV’s and
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100mA
equivalent bu806
bu806 equivalent
BU806
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250V transistor npn 2a
Abstract: NPN Transistor 1A 400V npn transistors 400V 1A Saturation BU926 BU92
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU926 DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 400V (Min) ·Low Saturation Voltage : VCE(sat)= 1.5V (Max)@IC= 5A APPLICATIONS ·Designed for use in high-voltage , high-speed , power
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BU926
250V transistor npn 2a
NPN Transistor 1A 400V
npn transistors 400V 1A
Saturation
BU926
BU92
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transistor BU406
Abstract: 400V 100MA NPN npn transistor 400V Transistor Transistor Power Horizontal NPN Transistor 5A 400V BU406 400V switching transistor crt horizontal deflection circuit transistor for horizontal deflection output NPN Power Transistor 5A 400V
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU406 DESCRIPTION •High Voltage: VCEV= 400V Min ·Fast Switching Speed: tf= 750ns(Max) ·Low Saturation Voltage: VCE(sat)= 1.0V(Max)@ IC= 5A APPLICATIONS ·Designed for use in horizontal deflection output stages
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BU406
750ns
20MHz
transistor BU406
400V 100MA NPN
npn transistor 400V
Transistor Transistor Power Horizontal
NPN Transistor 5A 400V
BU406
400V switching transistor
crt horizontal deflection circuit
transistor for horizontal deflection output
NPN Power Transistor 5A 400V
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BU180A
Abstract: darlington Vce-200V NPN DARLINGTON 10A 400V NPN Transistor 10A 400V npn transistor 400V npn darlington 400v 10a darlington power transistor 10a Darlington NPN Silicon Diode darlington power transistor npn DARLINGTON 10A
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •Collector Current -IC= 10A ·DC Current Gain: hFE= 200 Min @ IC= 5A ·Low Collector Saturation Voltage APPLICATIONS ·Designed for line operated switchmode applications
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BU180A
100mA
BU180A
darlington Vce-200V
NPN DARLINGTON 10A 400V
NPN Transistor 10A 400V
npn transistor 400V
npn darlington 400v 10a
darlington power transistor 10a
Darlington NPN Silicon Diode
darlington power transistor
npn DARLINGTON 10A
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pin diagram of ic 4440
Abstract: IC 0116 DC TSC5305D TSC5305DCM TSC5305DCZ ic 4440 transistor Vceo 400V, Vebo 9v, Ic 10A
Text: Preliminary TSC5305D High Voltage NPN Transistor with Diode TO-263 Pin assignment: 1. Base 2. Collector 3. Emitter BVCEO = 400V BVCBO = 750V Ic = 5A VCE SAT , = 1.2V @ Ic / Ib = 4A / 1A Features Ordering Information Built-in free-wheeling diode makes efficient anti
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TSC5305D
O-263
TSC5305DCZ
O-220
TSC5305DCM
O-220
O-263
TS5305D
pin diagram of ic 4440
IC 0116 DC
TSC5305D
TSC5305DCM
TSC5305DCZ
ic 4440
transistor Vceo 400V, Vebo 9v, Ic 10A
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EE16
Abstract: sanyo ni-cd ee-16 core EE16 pulse trans EE16 9V EE16 4 3 EE16 5V
Text: Ordering number:ENN538E NPN Epitaxial Planar Silicon Transistor 2SD826 20V/5A Switching Applications Features Package Dimensions • Low saturation voltage. · High hFE. · Large current capacity. unit:mm 2009B [2SD826] 8.0 2.7 1.5 7.0 3.0 11.0 4.0 3.0 1.6
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ENN538E
2SD826
2009B
2SD826]
100ms,
O-126
150ctric
EE16
sanyo ni-cd
ee-16
core EE16
pulse trans
EE16 9V
EE16 4 3
EE16 5V
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transistor BU406
Abstract: bu406d BU406 7A60W
Text: HORIZONTAL DEFLECTION TRANSISTOR NPN BU406/D, 7A 60W Technical Data … for Horizontal deflection output stages of TV’s and CRT’s. F Collector-Emitter Voltage-VCEV=400Vdc F Low Saturation Voltage:VCE sat =1V(max)@5A F TO-220 Package F Fast Switching Speed:tf=750 ns(max)
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BU406/D,
400Vdc
O-220
BU406D
10Vdc
40Vdc
transistor BU406
BU406
7A60W
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1348 transistor
Abstract: TRANSISTOR K 1507 POWER TRANSISTOR TO-220 marking A07 ITO-220 TSC148D TSC148DCI TSC148DCZ Transistor 1507 Transistor 1308
Text: TSC148D High Voltage Fast-Switching NPN Power Transistor TO-220 ITO-220 PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 700V IC VCE SAT Features 8A 1.5V @ IC / IB = 5A / 1A Block Diagram ● High Voltage Capability ● Very High Speed Switching
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TSC148D
O-220
ITO-220
TSC148DCZ
TSC148DCI
50pcs
1348 transistor
TRANSISTOR K 1507
POWER TRANSISTOR TO-220
marking A07
ITO-220
TSC148D
Transistor 1507
Transistor 1308
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Untitled
Abstract: No abstract text available
Text: TSC742 High Voltage NPN Transistor TO-220 PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 420V BVCBO 1050V IC VCE SAT Features 5A 0.5V @ IC=1A, IB=0.2A Block Diagram ● High Voltage Capability ● High Switching Speed Structure ●
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TSC742
O-220
TSC742CZ
50pcs
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Untitled
Abstract: No abstract text available
Text: , Una. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TIP152 Silicon NPN Darlington Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage« : V(BR)CEO= 400V(Min.) • Collector-Emitter Saturation Voltage: VCE(sat)= 2.0V(Max.)@ lc= 5A
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TIP152
O-220C
100mA
250mA
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Untitled
Abstract: No abstract text available
Text: TSC5804D High Voltage Fast-Switching NPN Power Transistor TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 450V BVCBO 1050V IC VCE(SAT) Features 5A 0.5V @ IC=1A, IB=0.2A Block Diagram ● High Voltage Capability
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TSC5804D
O-251
O-252
TSC5804DCH
TSC5804DCP
75pcs
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TRANSISTOR K 1507
Abstract: 1348 transistor TRANSISTOR D 1785 silicon power diode to263 3A fast-switching diode HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR 700v 1a marking code 0632 Transistor 1507 POWER TRANSISTOR TO-220
Text: TSC148D High Voltage Fast-Switching NPN Power Transistor TO-220 ITO-220 TO-263 2 D PAK PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 8A 1.5V @ IC / IB = 5A / 1A Block Diagram Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation
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TSC148D
O-220
ITO-220
O-263
TSC148DCZ
TSC148DCI
TSC148DCM
O-263
TRANSISTOR K 1507
1348 transistor
TRANSISTOR D 1785
silicon power diode to263
3A fast-switching diode
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR 700v 1a
marking code 0632
Transistor 1507
POWER TRANSISTOR TO-220
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Untitled
Abstract: No abstract text available
Text: TSC148D High Voltage Fast-Switching NPN Power Transistor TO-220 ITO-220 TO-263-2L 2 D PAK PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 8A 1.5V @ IC / IB = 5A / 1A Block Diagram Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation
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TSC148D
O-220
ITO-220
O-263-2L
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IC 0116 DC
Abstract: NPN Transistor 8A transistor b 40 Ic-5A datasheet npn switching transistor Ic 5A marking A07 marking code IC 4A transistor npn 2a switching applications TS13007B TS13007BCZ transistor 2a h
Text: TS13007B High Voltage NPN Transistor TO-220 Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 400V BVCBO 700V IC VCE SAT Features 8A 3V @ IC / IB = 8A / 2A Block Diagram ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type
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TS13007B
O-220
TS13007BCZ
50pcs
IC 0116 DC
NPN Transistor 8A
transistor b 40 Ic-5A datasheet
npn switching transistor Ic 5A
marking A07
marking code IC 4A
transistor npn 2a switching applications
TS13007B
transistor 2a h
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NPN transistor for switching applications, 400V
Abstract: TS13009CZ marking code IC 8A transistor 400v 8a to220 IC 0116 DC TS13009 "NPN Transistor"
Text: TS13009 High Voltage NPN Transistor TO-220 Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 400V BVCBO 700V IC 12A VCE SAT Features 1.5V @ IC / IB = 12A / 3A Block Diagram ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type
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TS13009
O-220
50pcs
TS13009CZ
NPN transistor for switching applications, 400V
marking code IC 8A
transistor 400v 8a to220
IC 0116 DC
TS13009
"NPN Transistor"
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2SC3306
Abstract: TR10S
Text: TOSHIBA 2SC3306 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC3306 SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS. HIGH SPEED DC-DC CONVERTER APPLICATIONS. • Excellent Switching Times : tr =1.0/^s Max. , tf^l.O/^s (Max.) (1(2 = 5A)
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2SC3306
WIDTH-20//S
2SC3306
TR10S
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 2SC5352 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE i <;r * 3 < 51 SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS HIGH SPEED DC-DC CONVERTER APPLICATIONS • • Excellent Switching Times : tr = 0.5^s Max. , tf=0.3,ys (Max.) (Ic = 5A)
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2SC5352
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SC5352 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5352 Unit in mm SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS 15.9 MAX. 03.2 ±0.2 HIGH SPEED DC-DC CONVERTER APPLICATIONS • • Excellent Switching Times : tr = 0.5//s Max. , tf=0.3,«s (Max.) (Ic = 5A)
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2SC5352
20jus
VCC-200V
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2SC3306
Abstract: No abstract text available
Text: TOSHIBA 2SC3306 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC3306 SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS. U nit in mm .2 ± 0.2 15-9MAX HIGH SPEED DC-DC CONVERTER APPLICATIONS. if • Excellent Switching Times : tr = 1.0/^s Max. , tf=1.0/^s (Max.) (Ic = 5A)
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2SC3306
15-9MAX
2SC3306
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2SC2792
Abstract: No abstract text available
Text: TOSHIBA 2SC2792 TO SHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC2792 INDUSTRIAL APPLICATIONS SW ITCHING REGULATOR A N D HIGH VOLTAGE SW ITCHING APPLICATIONS. HIGH SPEED DC-DC CONVERTER APPLICATIONS. • Excellent Switching Times Iq = 0.-5A. tr = 1.0/« s Max. tf= 1.0/iS Max.
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2SC2792
961001EAA2'
2SC2792
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2SC3425
Abstract: No abstract text available
Text: TO SH IBA 2SC3425 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS 2SC3425 Unit in mm SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS 8.3 M A X . • • h- Excellent Switching Times : tr = l.u/^s (Max.), tf^i.S/^s (Max.) at Ie = u.5A
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2SC3425
2SC3425
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SC3306 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC3306 SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS. U nit in mm 15 .9 M A X . 43.2 + 0.2 HIGH SPEED DC-DC CONVERTER APPLICATIONS. • Excellent Switching Times : tr = 1 .0 ^ s (Max. , tf= 1.0,as (Max.) (Ic = 5A)
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2SC3306
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2SC3306
Abstract: No abstract text available
Text: TO SH IBA 2SC3306 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC3306 SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS. Unit in mm 43.2 ± 0.2 15.9M AX. HIGH SPEED DC-DC CONVERTER APPLICATIONS. eÆ • Excellent Switching Times : tr =1.0/^s Max.f, tf^l.O/^s (Max. (Ic = 5A)
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2SC3306
2SC3306
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