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    NPN TRANSISTOR 600V Search Results

    NPN TRANSISTOR 600V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4204F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation

    NPN TRANSISTOR 600V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    13003D

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 13003DE Preliminary NPN SILICON TRANSISTOR SILICON TRIPLE DIFFUSION NPN BIPOLAR TRANSISTORS „ DESCRIPTION The UTC 13003DE is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high


    Original     		PDF 13003DE 13003DE 13003DEL-x-T60-F-K 13003DEG-x-T60-F-K 13003DEL-x-T92-A-B 13003DEG-x-T92-A-B 1300at QW-R223-013 13003D

    13003d

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 13003DE Preliminary NPN SILICON TRANSISTOR SILICON TRIPLE DIFFUSION NPN BIPOLAR TRANSISTORS  DESCRIPTION The UTC 13003DE is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high


    Original     		PDF 13003DE 13003DE 13003DEL-x-T60-K 13003DEG-x-T60-K 13003DEL-x-T92-B 13003DEG-at QW-R223-013 13003d

    NPN Transistor 600V

    Abstract: B528 ULB122
    Text: UNISONIC TECHNOLOGIES CO., LTD ULB122 NPN SILICON TRANSISTOR NPN TRIPLE DIFFUSED PLANAR TYPE HIGH VOLTAGE TRANSISTOR „ DESCRIPTION The UTC ULB122 is a medium power transistor designed for use in switching applications. „ FEATURES * High breakdown voltage


    Original     		PDF ULB122 ULB122 ULB122G-xx-TM3-T O-251 QW-R213-014 NPN Transistor 600V B528

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 13003DH Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION  DESCRIPTION The UTC 13003DH is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high


    Original     		PDF 13003DH 13003DH 13003DHL-x-TM3-T 13003DHL-x-T60-K QW-R223-011

    HLB122L

    Abstract: HLB122
    Text: UTC HLB122 NPN EPITAXIAL SILICON TRANSISTOR NPN TRIPLE DIFFUSED PLANAR TYPE HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC HLB122 is a medium power transistor designed for use in switching applications. FEATURES 1 * High breakdown voltage * Low collector saturation voltage


    Original     		PDF HLB122 HLB122 O-251 HLB122L QW-R213-014 HLB122L

    NPN Transistor 600V

    Abstract: L13022
    Text: UNISONIC TECHNOLOGIES CO., LTD L13022 NPN SILICON TRANSISTOR NPN TRIPLE DIFFUSED PLANAR TYPE HIGH VOLTAGE TRANSISTOR „ DESCRIPTION 1 The UTC L13022 is a medium power transistor designed for use in switching applications. „ FEATURES * High breakdown voltage


    Original     		PDF L13022 L13022 O-251 L13022L L13022G L13022-TM3-T L13022L-TM3-T L13022G-TM3-T QW-R213-014 NPN Transistor 600V

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 13003DH Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION „ DESCRIPTION The UTC 13003DH is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high


    Original     		PDF 13003DH 13003DH 13003DHL-x-TM3-T 13003DHL-x-T60-F-K 13003DHL-x-T92-A-B 13003DHL-x-Tat QW-R223-011

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 13003DF Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION „ DESCRIPTION The UTC 13003DF is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high


    Original     		PDF 13003DF 13003DF 13003DFL-xx-T60-F-K 13003DFG-xx-T60-F-K 13003DFL-xx-T9at QW-R223-014

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13001 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR „ FEATURES * Collector-base voltage: V BR CBO=600V * Collector current: IC=0.2A „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free MJE13001L-x-AB3-A -R


    Original     		PDF MJE13001 MJE13001L-x-AB3-A MJE13001G-x-AB3-A-R MJE13001L-x-AB3-F MJE13001G-x-AB3-F-R MJE13001L-x-T92-B MJE13001G-x-T92-B MJE13001L-x-T92-K MJE13001G-x-T92-K MJE13001L-x-T92-A-B

    MJE13001

    Abstract: MJE-13001 MJe13001 TRANSISTOR transistor mje13001 NPN Transistor 600V npn 600v to92 2T92
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13001 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR „ FEATURES * Collector-base voltage: V BR CBO=600V * Collector current: IC=0.2A Lead-free: MJE13001L Halogen-free: MJE13001G „ ORDERING INFORMATION Normal MJE13001-x-T92-B


    Original     		PDF MJE13001 MJE13001L MJE13001G MJE13001L-x-T92-B MJE13001G-x-T92-B MJE13001L-x-T92-K MJE13001G-x-T92-K MJE13001-x-T92-B MJE13001-x-T92-K MJE13001L-x-T92-B MJE13001 MJE-13001 MJe13001 TRANSISTOR transistor mje13001 NPN Transistor 600V npn 600v to92 2T92

    MJE-13001

    Abstract: MJE13001 MJE13001 equivalent transistor mje13001 MJe13001 TRANSISTOR NPN Transistor 600V mje13001 application all MJE13001 equivalent transistors equivalent mje13001 mje13001 D
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13001 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR „ FEATURES * Collector-base voltage: V BR CBO=600V * Collector current: IC=0.2A Lead-free: MJE13001L Halogen-free: MJE13001G „ ORDERING INFORMATION Normal MJE13001-x-T92-B


    Original     		PDF MJE13001 MJE13001L MJE13001G MJE13001-x-T92-B MJE13001-x-T92-K MJE13001L-x-T92-B MJE13001G-x-T92-B MJE13001L-x-T92-K MJE13001G-x-T92-K MJE13001L-x-T92-B MJE-13001 MJE13001 MJE13001 equivalent transistor mje13001 MJe13001 TRANSISTOR NPN Transistor 600V mje13001 application all MJE13001 equivalent transistors equivalent mje13001 mje13001 D

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13001-P NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR „ FEATURES * Collector-base voltage: V BR CBO=600V * Collector current: IC=0.2A „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free MJE13001-PL-x-T92-B


    Original     		PDF MJE13001-P MJE13001-PL-x-T92-B MJE13001-PG-x-T92-B MJE13001-PL-x-T92-K MJE13001-PG-x-T92-K MJE13001-PL-x-T92-A-B MJE13001-PG-x-T92-A-B MJE13001-PL-x-T92-A-K MJE13001-PG-x-T92-A-K QW-R201-088

    MJE13001

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13001 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR  FEATURES * Collector-base voltage: V BR CBO=600V * Collector current: IC=0.2A  ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free MJE13001G-x-AB3-A-R


    Original     		PDF MJE13001 MJE13001G-x-AB3-A-R OT-89 MJE13001G-x-AB3-F-R MJE13001L-x-T92-B MJE13001G-x-T92-B MJE13001L-x-T92-K MJE13001G-x-T92-K MJE13001L-x-T92-A-B MJE13001

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13001-P NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR „ FEATURES * Collector-base voltage: V BR CBO=600V * Collector current: IC=0.2A „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free MJE13001L-P-x-T92-A-B


    Original     		PDF MJE13001-P MJE13001L-P-x-T92-A-B MJE13001G-P-x-T92-A-B MJE13001L-P-x-T92-A-K MJE13001G-P-x-T92-A-K MJE13001L-P-x-T92-F-B MJE13001G-P-x-T92-F-B MJE13001L-P-x-T92-F-K MJE13001G-P-x-T92-F-K QW-R201-088

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13001-P NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR  FEATURES * Collector-base voltage: V BR CBO=600V * Collector current: IC=0.2A  ORDERING INFORMATION Ordering Number Lead Free Halogen Free MJE13001L-P-x-T92-B


    Original     		PDF MJE13001-P MJE13001L-P-x-T92-B MJE13001G-P-x-T92-B MJE13001L-P-x-T92-K MJE13001G-P-x-T92-K MJE13001L-P-x-T92-A-B MJE13001G-P-x-T92-A-B MJE13001L-P-x-T92-A-K MJE13001G-P-x-T92-A-K QW-R201-088

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13001-Q NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR  FEATURES * Collector-base voltage: V BR CBO=600V * Collector current: IC=0.2A  ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free MJE13001G-Q-x-AB3-A-R


    Original     		PDF MJE13001-Q MJE13001G-Q-x-AB3-A-R OT-89 MJE13001G-Q-x-AB3-F-R MJE13001L-Q-x-T92-F-B MJE13001G-Q-x-T92-F-B MJE13001L-Q-x-T92-F-K MJE13001G-Q-x-T92-F-K

    NPN Transistor 600V

    Abstract: l13024 NPN Transistor 600V TO-220
    Text: UNISONIC TECHNOLOGIES CO., LTD L13024 NPN SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR „ DESCRIPTION The UTC L13024 is designed for high voltage, high speed switching inductive circuits, and amplifier applications. „ FEATURES * High Speed Switching


    Original     		PDF L13024 L13024 L13024L L13024G L13024-TA3-T L13024-TM3-T L13024L-TA3-T L13024L-TM3-T L13024G-TA3-T L13024G-TM3-T NPN Transistor 600V NPN Transistor 600V TO-220

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


    Original     		PDF

    transistor b1

    Abstract: hlb124 NPN Transistor 600V 1S1000 utchlb124
    Text: UTC HLB124 NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC HLB124 is designed for high voltage, high speed switching inductive circuits, and amplifier applications. 1 FEATURES * High Speed Switching * Low Saturation Voltage


    Original     		PDF HLB124 HLB124 O-220 HLB124L QW-R203-029 transistor b1 NPN Transistor 600V 1S1000 utchlb124

    MJE-13001

    Abstract: MJE13001 C 2025 npn 600v to92 transistor mje13001
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13001 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR „ FEATURES * Collector-base voltage: V BR CBO=600V * Collector current: IC=0.2A „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free MJE13001L-x-x-AB3-A -R MJE13001G-x-x-AB3-A-R


    Original     		PDF MJE13001 OT-89 MJE13001L-x-x-AB3-A MJE13001G-x-x-AB3-A-R MJE13001L-x-x-AB3-F MJE13001G-x-x-AB3-F-R MJE13001L-x-x-T92-B MJE13001G-x-x-T92-B MJE13001L-x-x-T92-K MJE-13001 MJE13001 C 2025 npn 600v to92 transistor mje13001

    MJE-13001

    Abstract: transistor mje13001 TO-92 mje13001 MJE13001 MJE13001 TO92 npn 600v to92 NPN Transistor 600V 1015 to-92
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13001 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR „ FEATURES * Collector-base voltage: V BR CBO=600V * Collector current: IC=0.2A „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free MJE13001L-x-x-AB3-A -R MJE13001G-x-x-AB3-A-R


    Original     		PDF MJE13001 OT-89 MJE13001L-x-x-AB3-A MJE13001G-x-x-AB3-A-R MJE13001L-x-x-AB3-F MJE13001G-x-x-AB3-F-R MJE13001L-x-x-T92-B MJE13001G-x-x-T92-B MJE13001L-x-x-T92-K MJE-13001 transistor mje13001 TO-92 mje13001 MJE13001 MJE13001 TO92 npn 600v to92 NPN Transistor 600V 1015 to-92

    NPN Transistor 600V TO-220

    Abstract: ULB124G ulb124
    Text: UNISONIC TECHNOLOGIES CO., LTD ULB124 NPN SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR „ 1 DESCRIPTION TO- 251 The UTC ULB124 is designed for high voltage, high speed switching inductive circuits, and amplifier applications. „ FEATURES * High Speed Switching


    Original     		PDF ULB124 ULB124 O-220 ULB124L-xx-TA3-T ULB124G-xx-TA3-T ULB124L-xx-TM3-T ULB124G-xx-TM3-T O-251 QW-R213-013 NPN Transistor 600V TO-220 ULB124G

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD ULB124 NPN SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR „ 1 DESCRIPTION TO- 251 The UTC ULB124 is designed for high voltage, high speed switching inductive circuits, and amplifier applications. „ FEATURES * High Speed Switching


    Original     		PDF ULB124 ULB124 O-220 ULB124G-xx-TA3-T ULB124G-xx-TM3-T O-251 QW-R213-013

    darlington NPN 600V 12a transistor

    Abstract: darlington NPN 600V 20a transistor NPN 600V transistor NPN 600V transistor darlington application MJ10023 NPN Transistor 600V MJ10023 NPN POWER DARLINGTON darlington NPN 600V
    Text: DATA SHEET MJ10023 NPN SILICON POWER DARLINGTON TRANSISTOR JEDEC TO-3 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR MJ10023 is a Silicon NPN Power Darlington Transistor, mounted in a hermetically sealed metal case, designed for high voltage, high speed, power applications.


    Original     		PDF MJ10023 MJ10023 darlington NPN 600V 12a transistor darlington NPN 600V 20a transistor NPN 600V transistor NPN 600V transistor darlington application MJ10023 NPN Transistor 600V NPN POWER DARLINGTON darlington NPN 600V