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    NPN TRANSISTOR FOR SWITCHING APPLICATIONS, 400V Search Results

    NPN TRANSISTOR FOR SWITCHING APPLICATIONS, 400V Result Highlights (5)

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    NPN TRANSISTOR FOR SWITCHING APPLICATIONS, 400V Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MJE13007D

    Abstract: NPN Transistor 50A 400V 24 pin ic utc rc
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13007D NPN SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS „ DESCRIPTION The UTC MJE13007D is designed for high-voltage, high-speed power switching inductive circuits where fall time is


    Original     		MJE13007D MJE13007D MJE13007DL-TA3-T MJE13007DG-TA3-T O-220 MJE13007DL-TA3-T O-220 QW-R203-042 NPN Transistor 50A 400V 24 pin ic utc rc PDF

    BUV28

    Abstract: No abstract text available
    Text: BUV28 NPN SWITCHING TRANSISTOR • ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR VERY LOW SATURATION VOLTAGE FAST TURN-OFF AND TURN-ON APPLICATIONS: SWITCHING REGULATORS ■ SOLENOID / RELAY DRIVERS ■ DESCRIPTION High speed transistor suited for low voltage


    Original     		BUV28 O-220 BUV28 PDF

    BUV28

    Abstract: No abstract text available
    Text: BUV28 SILICON NPN SWITCHING TRANSISTOR • ■ ■ ■ SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR VERY LOW SATURATION VOLTAGE FAST TURN-OFF AND TURN-ON APPLICATIONS: SWITCHING REGULATORS ■ SOLENOID / RELAY DRIVERS ■ DESCRIPTION High speed transistor suited for low voltage


    Original     		BUV28 O-220 BUV28 PDF

    BUV28

    Abstract: No abstract text available
    Text: BUV28 SILICON NPN SWITCHING TRANSISTOR • ■ ■ ■ SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR VERY LOW SATURATION VOLTAGE FAST TURN-OFF AND TURN-ON APPLICATIONS: ■ SWITCHING REGULATORS ■ SOLENOID / RELAY DRIVERS DESCRIPTION High speed transistor suited for low voltage


    Original     		BUV28 O-220 BUV28 PDF

    MJE13007G

    Abstract: MJE13007 utc mje13007l MJE13007-TA3-T MJE13007L-TA3-T MJE13007* transistor TRANSISTOR BIPOLAR 400V 20A silicon transistor Vcbo 800 Vceo 1000 Ic 20A NPN Transistor 50A 400V 700 v power transistor
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13007 NPN SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS „ DESCRIPTION The UTC MJE13007 is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. It is


    Original     		MJE13007 MJE13007 MJE13007L MJE13007G MJE13007-TA3-T MJE13007-TF3- MJE13007L-TA3-T MJE13007L-TF3- MJE13007G-TA3-T MJE13007G-TF3- MJE13007G utc mje13007l MJE13007-TA3-T MJE13007L-TA3-T MJE13007* transistor TRANSISTOR BIPOLAR 400V 20A silicon transistor Vcbo 800 Vceo 1000 Ic 20A NPN Transistor 50A 400V 700 v power transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13007 NPN SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS  DESCRIPTION The UTC MJE13007 is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. It is


    Original     		MJE13007 MJE13007 MJE13007L-TA3-T MJE13007G-TA3-T MJE13007L-TF3-T MJE13007G-TF3-T MJE13007L-TF1-T MJE13007G-TF1-T MJE13007L-TF2-T MJE13007G-TF2-T PDF

    MJE13007-M

    Abstract: NPN Transistor 50A 400V 24 pin ic utc rc 400v 50A Transistor
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13007-M NPN SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS „ DESCRIPTION The UTC MJE13007-M is designed for high-voltage and high-speed power switching inductive circuits where fall time is


    Original     		MJE13007-M MJE13007-M MJE13007L-M-TA3-T MJE13007G-M-TA3-T O-220 MJE13007L-M-TA3-T O-220 QW-R204-028 NPN Transistor 50A 400V 24 pin ic utc rc 400v 50A Transistor PDF

    MJE13007

    Abstract: mje13007 TRANSISTOR transistor MJE13007
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13007 NPN SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS „ DESCRIPTION The UTC MJE13007 is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. It is


    Original     		MJE13007 MJE13007 MJE13007L-TA3-T MJE13007G-TA3-T MJE13007L-TF3-T MJE13007G-TF3-T O-220 O-220F MJE13007L-TA3-T O-220, mje13007 TRANSISTOR transistor MJE13007 PDF

    Untitled

    Abstract: No abstract text available
    Text: BUV28 NPN SWITCHING TRANSISTOR • ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR VERY LOW SATURATION VOLTAGE FAST TURN-OFF AND TURN-ON s ct APPLICATIONS: ■ SWITCHING REGULATORS ■ SOLENOID / RELAY DRIVERS DESCRIPTION High speed transistor suited for low voltage


    Original     		BUV28 PDF

    NPN Transistor 5A 400V

    Abstract: utc High Voltage Switching Transistor planar transistor
    Text: UTC BU407 NPN EXPITAXIAL PLANAR TRANSISTOR NPN EXPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC BU407 is a NPN expitaxial planar transistor, designed for use in TV Horizontal output and switching applications. 1 FEATURE *High breakdown voltage TO-220 1:BASE


    Original     		BU407 BU407 O-220 QW-R203-020 NPN Transistor 5A 400V utc High Voltage Switching Transistor planar transistor PDF

    TRANSISTOR VCE 400V 500mA

    Abstract: TRANSISTOR 400V 500mA vbe 10v, vce 5v NPN Transistor npn transistor 400V BU407 npn switching transistor Ic 5A
    Text: UTC BU407 NPN EXPITAXIAL PLANAR TRANSISTOR NPN EXPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC BU407 is a NPN expitaxial planar transistor, designed for use in TV Horizontal output and switching applications. 1 FEATURE *High breakdown voltage TO-220 1:BASE


    Original     		BU407 BU407 O-220 100mA, 500mA, QW-R203-020 TRANSISTOR VCE 400V 500mA TRANSISTOR 400V 500mA vbe 10v, vce 5v NPN Transistor npn transistor 400V npn switching transistor Ic 5A PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13007-Q Preliminary NPN SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS  DESCRIPTION The UTC MJE13007-Q is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. It is


    Original     		MJE13007-Q MJE13007-Q MJE13007L-Q-TA3-T MJE13007G-Q-TA3-T O-220 QW-R203-046 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13007-P Preliminary NPN SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS  DESCRIPTION The UTC MJE13007-P is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. It is


    Original     		MJE13007-P MJE13007-P MJE13007L-P-TA3-T MJE13007G-P-TA3-T O-220 QW-R203-047 PDF

    NPN Transistor 1A 400V

    Abstract: 2SC2414 npn transistors 400V 1A vbe 10v, vce 500v NPN Transistor transistor Ic 1A datasheet NPN IC Designs transistor npn 2a "switching applications" vce 500v NPN Transistor
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2414 DESCRIPTION •High Switching Speed ·Collector-Emitter Sustaining Voltage: VCEO SUS = 400V (Min) APPLICATIONS ·Designed for high speed power switching applications.


    Original     		2SC2414 NPN Transistor 1A 400V 2SC2414 npn transistors 400V 1A vbe 10v, vce 500v NPN Transistor transistor Ic 1A datasheet NPN IC Designs transistor npn 2a "switching applications" vce 500v NPN Transistor PDF

    vbe 10v, vce 500v NPN Transistor

    Abstract: 2SC2415 NPN Transistor 1A 400V power transistor 3A vce 500v NPN Transistor
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2415 DESCRIPTION •High Switching Speed ·Collector-Emitter Sustaining Voltage: VCEO SUS = 400V (Min) APPLICATIONS ·Designed for high speed power switching applications.


    Original     		2SC2415 vbe 10v, vce 500v NPN Transistor 2SC2415 NPN Transistor 1A 400V power transistor 3A vce 500v NPN Transistor PDF

    T13005

    Abstract: STT13005 0016114E JESD97 st 125mA dc dc NPN POWER TRANSISTOR "SOT-32"
    Text: STT13005 High voltage fast-switching NPN power transistor General features • NPN bipolar transistor ■ Medium voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications


    Original     		STT13005 OT-32 T13005 STT13005 0016114E JESD97 st 125mA dc dc NPN POWER TRANSISTOR "SOT-32" PDF

    NPN Transistor 1A 400V SOT-89

    Abstract: "NPN Transistor" NTE2431
    Text: NTE2430 Silicon NPN Transistor High Voltage Amp/Switch Compl to NTE2431 Description: The NTE2430 is a silicon NPN transistor in a SOT–89 type surface mount package designed for use in amplifier and switching switching applications. Absolute Maximum Ratings:


    Original     		NTE2430 NTE2431) NTE2430 NPN Transistor 1A 400V SOT-89 "NPN Transistor" NTE2431 PDF

    high voltage fast switching npn transistor

    Abstract: ULB121
    Text: UNISONIC TECHNOLOGIES CO., LTD ULB121 NPN SILICON TRANSISTOR NPN TRIPLE DIFFUSED PLANAR TYPE HIGH VOLTAGE TRANSISTOR „ DESCRIPTION The UTC ULB121 is a medium power transistor designed for use in switching applications. „ FEATURES * High breakdown voltage


    Original     		ULB121 ULB121 ULB121G-TM3-T O-251 QW-R213-015 high voltage fast switching npn transistor PDF

    NPN Transistor 600V

    Abstract: B528 ULB122
    Text: UNISONIC TECHNOLOGIES CO., LTD ULB122 NPN SILICON TRANSISTOR NPN TRIPLE DIFFUSED PLANAR TYPE HIGH VOLTAGE TRANSISTOR „ DESCRIPTION The UTC ULB122 is a medium power transistor designed for use in switching applications. „ FEATURES * High breakdown voltage


    Original     		ULB122 ULB122 ULB122G-xx-TM3-T O-251 QW-R213-014 NPN Transistor 600V B528 PDF

    NPN Transistor 50A 400V

    Abstract: to220f transistor
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13007 NPN SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS 1 TO-220 1 „ TO-220F DESCRIPTION The UTC MJE13007 is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. It is


    Original     		MJE13007 O-220 O-220F MJE13007 O-220F1 MJE13007L-TA3-T MJE13007G-TA3-T MJE13007L-TF3-T MJE13007G-TF3-T MJE13007L-TF1-T NPN Transistor 50A 400V to220f transistor PDF

    HLB121

    Abstract: No abstract text available
    Text: UTC HLB121 NPN EPITAXIAL SILICON TRANSISTOR NPN TRIPLE DIFFUSED PLANAR TYPE HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC HLB121 is a medium power transistor designed for use in switching applications. FEATURES 1 * High breakdown voltage * Low collector saturation voltage


    Original     		HLB121 HLB121 O-251 HLB121L QW-R213-015 PDF

    HLB122L

    Abstract: HLB122
    Text: UTC HLB122 NPN EPITAXIAL SILICON TRANSISTOR NPN TRIPLE DIFFUSED PLANAR TYPE HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC HLB122 is a medium power transistor designed for use in switching applications. FEATURES 1 * High breakdown voltage * Low collector saturation voltage


    Original     		HLB122 HLB122 O-251 HLB122L QW-R213-014 HLB122L PDF

    NPN Transistor 600V

    Abstract: L13022
    Text: UNISONIC TECHNOLOGIES CO., LTD L13022 NPN SILICON TRANSISTOR NPN TRIPLE DIFFUSED PLANAR TYPE HIGH VOLTAGE TRANSISTOR „ DESCRIPTION 1 The UTC L13022 is a medium power transistor designed for use in switching applications. „ FEATURES * High breakdown voltage


    Original     		L13022 L13022 O-251 L13022L L13022G L13022-TM3-T L13022L-TM3-T L13022G-TM3-T QW-R213-014 NPN Transistor 600V PDF

    NPN Triple Diffused Planar Silicon Transistor

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD L13021 NPN SILICON TRANSISTOR NPN TRIPLE DIFFUSED PLANAR TYPE HIGH VOLTAGE TRANSISTOR „ DESCRIPTION 1 The UTC L13021 is a medium power transistor designed for use in switching applications. „ FEATURES * High breakdown voltage


    Original     		L13021 L13021 O-251 L13021L L13021G L13021-TM3-T L13021L-TM3-T L13021G-TM3-T QW-R213-015 NPN Triple Diffused Planar Silicon Transistor PDF