NPN TRANSISTOR IC 50A Search Results

NPN TRANSISTOR IC 50A Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8

NPN TRANSISTOR IC 50A Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
TRANSISTOR MJ11028 Abstract: transistor mj11028 equivalent SILICON COMPLEMENTARY transistors darlington MJ11028 MJ11029 Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage : V BR CEO= 60V(Min.) ·High DC Current Gain: hFE= 1000(Min.)@IC= 25A : hFE= 400(Min.)@IC= 50A ·Complement to Type MJ11029	Original	MJ11029 250mA 500mA TRANSISTOR MJ11028 transistor mj11028 equivalent SILICON COMPLEMENTARY transistors darlington MJ11028 MJ11029	PDF
transistor mj11032 Abstract: NPN transistor Ic 50A darlington complementary 120v MJ11032 MJ11033 Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage : V BR CEO= 120V(Min.) ·High DC Current Gain: hFE= 1000(Min.)@IC= 25A : hFE= 400(Min.)@IC= 50A ·Complement to Type MJ11033	Original	MJ11033 250mA 500mA transistor mj11032 NPN transistor Ic 50A darlington complementary 120v MJ11032 MJ11033	PDF
NPN transistor Ic 50A Abstract: darlington transistor 90v darlington npn 90v MJ11030 MJ11031 Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage : V BR CEO= 90V(Min.) ·High DC Current Gain: hFE= 1000(Min.)@IC= 25A : hFE= 400(Min.)@IC= 50A ·Complement to Type MJ11031	Original	MJ11031 250mA 500mA NPN transistor Ic 50A darlington transistor 90v darlington npn 90v MJ11030 MJ11031	PDF
Untitled Abstract: No abstract text available Text: SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR Tamb=25°C IC/IB=200 IC/IB=100 IC/IB=10 0.8 -55°C +25°C +100°C +175°C 0.8 IC/IB=100 0.6 0.6 PARTMARKING DETAIL COMPLEMENTARY TYPE - 0.4 0.4 ABSOLUTE MAXIMUM RATINGS. 0.2 0.2 0.01 0.1 1 10 0.01	Original	OT223 FZT688B FZT788B 100ms	PDF
FZT688B Abstract: No abstract text available Text: SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR FZT688B TYPICAL CHARACTERISTICS Tamb=25°C IC/IB=200 IC/IB=100 IC/IB=10 0.6 V V 0.4 0.2 0.01 0.1 1 I+ - Collector Current Amps -55°C +25°C +100°C +175°C 0.8 - (Volts) - (Volts) 0.8 PARTMARKING DETAIL	Original	OT223 FZT688B FZT788B FZT688B 100ms	PDF
FZT688B Abstract: FZT788B DSA003675 Text: SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR FZT688B TYPICAL CHARACTERISTICS Tamb=25°C IC/IB=200 IC/IB=100 IC/IB=10 0.6 V V 0.4 0.2 0.01 0.1 1 I+ - Collector Current Amps -55°C +25°C +100°C +175°C 0.8 - (Volts) - (Volts) 0.8 PARTMARKING DETAIL	Original	OT223 FZT688B FZT788B 50MHz 500mA, FZT688B FZT788B DSA003675	PDF
2N3055 Abstract: 2n5471 TRANSISTOR 2Sc 2525 2N1487 2N1488 2N1490 2N1702 2N3442 2N3445 MJ2955 Text: General Transistor Corporation CASE lc M A X V ceo (SUS) TO-3 = 2-50A = 35-500V NPN Power Transistors PNP VCEO M 1C (max) (A) hFE@ic/Vc* (min-m« @ A/V) VCE(SAT) @IC/IB (V @ A/A) V8E @IC/VCE (V @ A/V) 40 55 40 55 6 6 6 6 15-45 @ 1.5/4 15-45 @ 1.5/4 25-75 @1.5/4	OCR Scan	5-500V 2N1487 2N1488 2N14S9 2N1490 2N6677 2N6678 2N6686 2N6667 2N3055 2n5471 TRANSISTOR 2Sc 2525 2N1487 2N1488 2N1490 2N1702 2N3442 2N3445 MJ2955	PDF
BUR20 Abstract: No abstract text available Text: SGS-THOMSON BUR20 ^ □ ^ © [E L IC T IH M O e S HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR ADVANCE DATA HIGH CURRENT HIGH SWITCHING SPEED HIGH POWER GOOD SOA GOOD RBSOA DESCRIPTION The BUR20 is a silicon multiepitaxial planar NPN transistor in modified JedecTO-3 metal case, inten	OCR Scan	BUR20 BUR20	PDF
Untitled Abstract: No abstract text available Text: General Transistor Corporation CASE TO-3 le MAX = 2-50A V c e o (sus) = 35-500V NPN Power Transistors PNP Type No. complement MJ1000 MJ900 MJ1001 MJ3001 MJ13014 MJ901 MJ2501 DARLINGTON yes yes yes yes MJ10012 MJ13015 MJ 13330 VCEO (sus) IC (max) (v) (A)	OCR Scan	5-500V MJ1000 MJ900 MJ1001 MJ3001 MJ13014 MJ901 MJ2501 MJ10012 MJ13015	PDF
laser LED Abstract: ZTX413 AVALANCHE TRANSISTOR edge emitter LED LED driver 110V DSA003766 avalanche mode transistor Text: NPN SILICON PLANAR AVALANCHE TRANSISTOR ZTX413 ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL Emitter Inductance Le Transition Frequency Collector-Base Capacitance MIN. TYP. MAX. UNIT CONDITIONS. 6 nH With 3mm leads fT 150 MHz IC=10mA, VCE=5V f=20MHz Ccb 2 pF	Original	ZTX413 20MHz 10KHz laser LED ZTX413 AVALANCHE TRANSISTOR edge emitter LED LED driver 110V DSA003766 avalanche mode transistor	PDF
transistor mj11028 equivalent Abstract: MJ11033 MJ11032 darlington 300w transistor mj11032 equivalent MJ11028 MJ11029 300w amplifier darlington npn 90v MJ11031 Text: SEME LAB MECHANICAL DATA Dimensions in mm inches NPN PNP MJ11028 MJ11030 MJ11032 MJ11029 MJ11031 MJ11033 COMPLEMENTARY DARLINGTON POWER TRANSISTOR 25.4 (1.0) 10.92 (0.430) 1.57 (0.062) 30 .15 (1.187 ) FEATURES 1 • HIGH DC CURRENT GAIN HFE = 1000 Min @ IC = 25A	Original	MJ11028 MJ11030 MJ11032 MJ11029 MJ11031 MJ11033 TEMPJ11033 100mA transistor mj11028 equivalent MJ11033 MJ11032 darlington 300w transistor mj11032 equivalent MJ11028 MJ11029 300w amplifier darlington npn 90v MJ11031	PDF
NS11032 Abstract: T0204 Text: NS11032 ^ IP NEW ENGLAND SEMICONDUCTOR NPN SILICON DARLINGTON POWER TRANSISTORS • • • • • • 50 AMPERE NPN DARLINGTON POWER TRANSISTOR G EN ER A L PURPO SE A M PLIFIE R LO W FR EQ U EN C Y SW ITCH ING HIGH DC C U R RE N T GAIN M O NO LITH IC CO NSTRU CTIO N	OCR Scan	NS11032 T0-204AE NS11032 T0204	PDF
Untitled Abstract: No abstract text available Text: S EM E LA B MECHANICAL DATA Dimensions in mm inches NPN PNP MJ11028 MJ11030 MJ11032 MJ11029 MJ11031 MJ11033 COMPLEMENTARY DARLINGTON POWER TRANSISTOR 25.4 (1.0) 10.92 (0.430) 1.57 (0.062) 30 .15 (1.18 7 ) FEATURES 1 • HIGH DC CURRENT GAIN HFE = 1000 Min @ IC = 25A	Original	MJ11028 MJ11030 MJ11032 MJ11029 MJ11031 MJ11033 MJ11028 MJ11030 MJ11029	PDF
Untitled Abstract: No abstract text available Text: HIGH POWER NPN SILICON TRANSISTOR STP5508 • Hermetic Metal TO3 Package. • High Current • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCBO VCEO VEB IC ICM IB PD TJ Tstg Collector – Base Voltage Collector – Emitter Voltage	Original	STP5508 O-204AE)	PDF

HIGH POWER NPN SILICON TRANSISTOR Abstract: STP5508 LE17 Text: HIGH POWER NPN SILICON TRANSISTOR STP5508 • Hermetic Metal TO3 Package. • High Current • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCBO VCEO VEB IC ICM IB PD TJ Tstg Collector – Base Voltage Collector – Emitter Voltage	Original	STP5508 O-204AE) HIGH POWER NPN SILICON TRANSISTOR STP5508 LE17	PDF
power transistor Ic 4A datasheet NPN smd Abstract: FZT688B Text: Transistors SMD Type NPN Silicon Planar Medium Power High Gain Transistor FZT688B SOT-223 Unit: mm 0.1max +0.05 0.90-0.05 Features Extremely low equivalent on resistance; RCE sat 83mÙ at 3A. +0.1 3.00-0.1 Gain of 400 at IC=3 Amps and very low saturation voltage.	Original	FZT688B OT-223 50MHz 500mA, power transistor Ic 4A datasheet NPN smd FZT688B	PDF
FZT688B Abstract: FZT788B DSA003713 Text: SOT223 NPN SILICON PLANAR MEDIUM FZT688B POWER HIGH GAIN TRANSISTOR ISSUE 3- OCTOBER 1995 FEATURES I ! I I RCE ,ti 83mQ at 3A low equivalent on resistance; ‘ Extremely ‘ Gain of 400 at IC=3 Amps and very low saturation voltage c, APPLICATIONS * Flash gun convertors & Batte~	Original	OT223 FZT688B FZT788B 50MHz FZT688B FZT788B DSA003713	PDF
2SD832 Abstract: fujitsu transistor j75c Text: 37 nJjTfSU MICROELECTRONICS ] E^\|37l4,i7bE OOOlñbt. b FUJITSU 2SD832 M IC R O E L E C T R O N IC S T - > 3 7 4 9 7 1>2 F U J I T S U M I C R O E L E C T R O N I C S 37C SILICON NPN DARLINGTON TRANSISTOR ABSOLUTE MAXIMUM RATINGS Rating X) TA = 25 "C) Condition	OCR Scan	2SD832 37497b2 O-220 2SD832 fujitsu transistor j75c	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA MP4503 TOSHIBA PO W ER TRANSISTOR M ODULE SILICON NPN & PNP EPITAXIAL TYPE DARLINGTON PO W ER TRANSISTOR 4 IN 1 M Pa s n •v ■ ■ ■ v w 3 mm HIGH PO W ER SWITCHING APPLICATIONS. IN D U S T R IA L A P P L IC A T IO N S U n it in mm HAM M ER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD	OCR Scan	MP4503	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA MP4501 TOSHIBA PO W ER TRANSISTOR M ODULE SILICON NPN EPITAXIAL TYPE DARLINGTON PO W ER TRANSISTOR 4 IN 1 M P 4 5 fl 1 • V ■ ■ ■ v w ■ HIGH PO W ER SWITCHING APPLICATIONS. IN D U S T R IA L A P P L IC A T IO N S U n it in mm H AM M ER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD	OCR Scan	MP4501	PDF
Untitled Abstract: No abstract text available Text: General Transistor Corporation CASE le MAX V c e o (SUS) = = TO-3 2-50A 35-500V NPN Power Transistors PNP VCEO (WS) 1C (max) M (A) hFE@ic/Vc* (min-max @ A/V) 40 55 40 55 6 6 6 6 15-45 0 1.5/4 15*4501.5/4 25-75 0 1.5/4 25-75 @1.5/4 40 60 140 60 80 5 15 10	OCR Scan	5-500V 2N3773 2N3788 2N3902 2N4070 2N4071 2N4347 2N4348 2N4913 2N1487	PDF
Untitled Abstract: No abstract text available Text: T '3 3 SEMELAB LT] L \ 37E ]) • Ô1331Ô7 OOOOlbO 2 ■ SMLB SEMELAB DEC 3 1 1987 .\P TJ&ff BUP51 / >i?d NPN MULTI-EPITAXIAL TRANSISTOR M E C H A N IC A L D A T A Designed for high energy applications requiring robust fast switching devices D im e nsion s in mm	OCR Scan	BUP51	PDF
Untitled Abstract: No abstract text available Text: SEMELAB 37E LTD 0133167 » SEMELAB J U L 0 6 1988 MJ14000 MJ14002 NPN MULTI-EPITAXIAL POWER TRANSISTOR Suitable for switching applications and high power amplifier circuits M E C H A N IC A L D A T A Dim ensions in mm FEATURES « -1 6 • 15 A lo w v ce\|sat,	OCR Scan	MJ14000 MJ14002 MJ14000 00002E7	PDF
Untitled Abstract: No abstract text available Text: 37E D SEMELAB LTD • Ô1331Ô7 00DD1Ö0 Ô M S t lL B SEMELAB JUL 0 6 1988 ^ BUT 92A NPN FAST SW ITCHING POWER TRANSISTOR M EC H A N IC A L DATA Suitable for high efficiency switching applications Dimensions in mm FEATURES H-1-6 • VERY LOW V,CE SAT • HIGH EFFICIENCY SWITCHING	OCR Scan	00DD1Ã 0-83mH 0-83ii G0001Ã	PDF

NPN TRANSISTOR IC 50A Search Results

NPN TRANSISTOR IC 50A Result Highlights (5)

NPN TRANSISTOR IC 50A Datasheets Context Search

TRANSISTOR MJ11028

transistor mj11032

NPN transistor Ic 50A

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FZT688B

FZT688B

2N3055

BUR20

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laser LED

transistor mj11028 equivalent

NS11032

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HIGH POWER NPN SILICON TRANSISTOR

power transistor Ic 4A datasheet NPN smd

FZT688B

2SD832

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