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    NPN TRANSISTOR KTC 200 Search Results

    NPN TRANSISTOR KTC 200 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    NPN TRANSISTOR KTC 200 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NPN Bipolar Transistor

    Abstract: KTC3198-O TO-92 NPN Bipolar Transistor Bl 370 MARKING A1G
    Text: KTC3198-O/Y/GR/BL Taiwan Semiconductor Small Signal Product TO-92 NPN Bipolar Transistor FEATURES - The transistor is subdivided into four groups according to its DC current gain: O, Y, GR, BL - Pb free and RoHS compliant MECHANICAL DATA - Case: TO-92 small outline plastic package


    Original     		PDF KTC3198-O/Y/GR/BL C/10s 195mg S1405004 NPN Bipolar Transistor KTC3198-O TO-92 NPN Bipolar Transistor Bl 370 MARKING A1G

    AD8304-EVAL

    Abstract: HP 3577A logarithmic converter AD8304 AD8304ARU AD8304ARU-REEL AD8304ARU-REEL7 RU-14 E1 to fiber optic converter circuit Keithley 236
    Text: a FEATURES Optimized for Fiber Optic Photodiode Interfacing Eight Full Decades of Range Law Conformance 0.1 dB from 1 nA to 1 mA Single-Supply Operation 3.0 V– 5.5 V Complete and Temperature Stable Accurate Laser-Trimmed Scaling: Logarithmic Slope of 10 mV/dB (at VLOG Pin)


    Original     		PDF 14-Lead AD8304 AD8304-EVAL HP 3577A logarithmic converter AD8304ARU AD8304ARU-REEL AD8304ARU-REEL7 RU-14 E1 to fiber optic converter circuit Keithley 236

    AD8304-EVAL

    Abstract: AD8304 AD83041 HP 3577A AD8304ARU AD8304ARU-REEL AD8304ARU-REEL7 RU-14 SNSD
    Text: a FEATURES Optimized for Fiber Optic Photodiode Interfacing Eight Full Decades of Range Law Conformance 0.1 dB from 1 nA to 1 mA Single-Supply Operation 3.0 V– 5.5 V Complete and Temperature Stable Accurate Laser-Trimmed Scaling: Logarithmic Slope of 10 mV/dB (at VLOG Pin)


    Original     		PDF 14-Lead AD8304 AD8304-EVAL AD83041 HP 3577A AD8304ARU AD8304ARU-REEL AD8304ARU-REEL7 RU-14 SNSD

    Untitled

    Abstract: No abstract text available
    Text: a FEATURES Optimized for Fiber Optic Photodiode Interfacing Eight Full Decades of Range Law Conformance 0.1 dB from 1 nA to 1 mA Single-Supply Operation 3.0 V– 5.5 V Complete and Temperature Stable Accurate Laser-Trimmed Scaling: Logarithmic Slope of 10 mV/dB (at VLOG Pin)


    Original     		PDF 14-Lead AD8304

    AD8304

    Abstract: AD8304ARU AD8304ARU-REEL AD8304ARU-REEL7 AD8304-EVAL RU-14 E1 to fiber optic converter circuit pa880
    Text: a FEATURES Optimized for Fiber Optic Photodiode Interfacing Eight Full Decades of Range Law Conformance 0.1 dB from 1 nA to 1 mA Single-Supply Operation 3.0 V–5.5 V Complete and Temperature Stable Accurate Laser-Trimmed Scaling: Logarithmic Slope of 10 mV/dB (at VLOG pin)


    Original     		PDF 14-Lead AD8304 AD8304 C02743 RU-14) AD8304ARU AD8304ARU-REEL AD8304ARU-REEL7 AD8304-EVAL RU-14 E1 to fiber optic converter circuit pa880

    c828 npn transistor datasheet

    Abstract: FS800R06KE3 c828 npn 09HVD6B-EMGF-NR TOKO CERAMIC FILTER a50 c828 TRANSISTOR equivalent c828 transistor diode in40 gp WMV smd transistor c828 transistor datasheet
    Text: HybridPACK Hybrid Kit for HybridPACK™2 Evaluation Kit for Applications with HybridPACK™2 Module Application Note V2.2, 2010-03 System Engineering Edition 2010-03 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG


    Original     		PDF intellecR214 R0402 R0603 3314J c828 npn transistor datasheet FS800R06KE3 c828 npn 09HVD6B-EMGF-NR TOKO CERAMIC FILTER a50 c828 TRANSISTOR equivalent c828 transistor diode in40 gp WMV smd transistor c828 transistor datasheet

    KTA950

    Abstract: ktc2120 C 2120 Y NPN transistor KTC 200
    Text: SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE POT PROCESS KTC 2120 APPLICATIONS I Low F r e q u e n c y P o w e r A m p lifie rs ( B - C la s s P u s h - p u l l , P o = lW ) I General P u r p o s e S w itc h in g C i r c u its FEATURES »Excellent Ii f e


    OCR Scan     		PDF 600mW, 800mA 500mA, IB-20mA Ta-25Â 100mA 700mA Ic-500mA, KTA950 ktc2120 C 2120 Y NPN transistor KTC 200

    kta1013

    Abstract: TIC 160 VCEO160V
    Text: SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE PCT PROCESS KTC 2383 U nit in m m ) . • Color T V jV ERT. D e f le c tio n O utput. ■ Color T V C l a s s B S o u n d O utput. ( FEATURES ) • High V o lta g e ! V ceo^ ^ O V • L a r g e C o n tin u o u s C o l l e c t o r C u r r e n t C a pability.


    OCR Scan     		PDF VCEO-160V KTA1013 Ta-25Â 500mA, 200mA 92MOD kta1013 TIC 160 VCEO160V

    germanium

    Abstract: kia 7208 KIA 7313 germanium transistor speaker protector
    Text: KOREA ELECTRONICS CO , LTD. KP—8111 PRODU CT GUIDE TRANSISTOR INTEGRATED CIRCUIT LIGHT-EMITTING DIODE DIODE KEC SEMICONDUCTOR MAXIMUM RATINGS v CEO USE lC Pc ELECTRICAL CHARACTERISTICS Ta = 25°C hFE TYPE (V) (mA) (mW) Vce (sat) MAX VCE lC (V) (mA) KTC I815/KTN 5014


    OCR Scan     		PDF I815/KTN 10I5/KTP 1923/KTN 380TM/KTN germanium kia 7208 KIA 7313 germanium transistor speaker protector

    2N3440 MOTOROLA

    Abstract: 2N5416 motorola 2n3439 motorola 2N3439 2N5415 MOTOROLA 2N3440 2N5415 2N6410 motorola 2n5416 transistor 2n3439
    Text: M A X IM U M RATIN G S IP Symbol Rating NF»N 2N3440 2NC41B 2N5416 2N3439 Collector-Emltter Voltage Vc e o 200 300 360 260 Vdc Collector-Base Voltage Vc b O 200 350 490 300 Vdc Emitter-Base Voltage Vebo 4.0 6.0 7.0 7.0 Vdc Baas Current Ib 0.5 Ade Collector Current —


    OCR Scan     		PDF 2NC41B 2N5416 2N3439 2N3440 2N3440 2N5415 2N5416 O-205AD) 2N3439, 2N3440 MOTOROLA 2N5416 motorola 2n3439 motorola 2N5415 MOTOROLA 2N6410 motorola 2n5416 transistor 2n3439

    TA2765

    Abstract: 2N5240 TA2765A 2n5239 Pt-100W
    Text: File Number HARRI S 321 SEHICON] 2N5239, 2N5240 SECTOR SbE ]> • M3Q5S71 High-Voltage, Silicon N-P-N T ransistors D04Q455 731 B H A S ^^3 ~/3 For High-Speed Switching and Linear-Amplifier Applications in Industrial and Commerical Service Features: ■ H igh voltage ratings: Vcer[si/s]


    OCR Scan     		PDF M3Q5S71 2N5239, 2N5240 D04Q455 2N5240) 2NS239) 2N5239 2N5240* 92LS-1969R1 92CS-12874 TA2765 2N5240 TA2765A Pt-100W

    MJH16018

    Abstract: baker e4 MTPSP10 P6302 a626 AM503 bt 109 transistor K1118 MJ16018 MTP8P10
    Text: MOTORGLA SC XSTRS/R F 12E D I t»3b?E5M []GaS227 1 | 7 ^ 3 3 - / S ' ' MOTOROLA r - 3 3 -/ 3 SEMICONDUCTOR TECHNICAL DATA M J16018 MJH16018 Designer's Data Sheet NPN Silicon Pow er Transistors 1.5 k V Sw itch m ode III Series These transistors are designed for high-voltage, high-speed, power switching in induc­


    OCR Scan     		PDF I6S98SC MJ16018 O-218AC MJH16018 MJH16018 baker e4 MTPSP10 P6302 a626 AM503 bt 109 transistor K1118 MJ16018 MTP8P10

    Halbleiterbauelemente DDR

    Abstract: MAA 436 TESLA mikroelektronik applikation Radio Fernsehen Elektronik 1977 Heft 9 IL709M mikroelektronik Heft MAA725 K553UD1A "Mikroelektronik" Heft Tesla katalog
    Text: INFORMATION MIKROELEKTRONIK APPLIKATION K 159 INNENSCHALTUNG SONDERHEFT IMPORT­ BAUELEMENTE UDSSR INTEGRIERTE SCHALTUNGEN INFORMATION-APPLIKATION SONDERHEFT IMPORTBAUELEMENTE INTEGRIERTE SCHALTUNGEN MIKROELEKTRONIK HEFT 6 veb Halbleiterwerk frankfurt oder


    OCR Scan     		PDF

    APY12

    Abstract: BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367
    Text: Semiconductors Semiconducteurs Halbleiter YEARLY EDITION - EDITION AN N UELLE - jX H R LIC H E AU SG A BE SIXTH EDITION SIXIEME EDITION SECHSTE AUSGABE 1978 Compiled by: Association Internationale PRO ELECTRON, Bd. de Waterloo, 103, B 1000 BRUSSELS Published by: JE. E KLUWER, B 2100 DEURNE-ANTWERP


    OCR Scan     		PDF Edition-1978) Ausgabe-1978) BS3934 SO-26 OT-114 NS371 APY12 BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367