NPN TRANSISTOR SOT-89 MARKING AG Search Results

NPN TRANSISTOR SOT-89 MARKING AG Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
2SC2712	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=70~700 / VCE(sat)=0.25 V / AEC-Q101 / SOT-346
2SC3325	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.5 A / hFE=70~240 / VCE(sat)=0.25 V / AEC-Q101 / SOT-346
2SC2713	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=0.1 A / hFE=200~700 / VCE(sat)=0.3 V / AEC-Q101 / SOT-346
2SC4116	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=70~700 / VCE(sat)=0.25 V / AEC-Q101 / SOT-323

NPN TRANSISTOR SOT-89 MARKING AG Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
onsemi DEVICE BK Abstract: 10R1 BCX56 BCX56-10R1 sot-89 body marking C 2 L Y Text: BCX56-10R1 Preferred Device NPN Silicon Epitaxial Transistor These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT-89 package, which is designed for medium power surface mount applications.	Original	BCX56-10R1 OT-89 inch/1000 r14525 BCX56 10R1/D onsemi DEVICE BK 10R1 BCX56-10R1 sot-89 body marking C 2 L Y	PDF
MUN5311DW1T1 Abstract: MUN5311DW1T1G MUN5312DW1T1 MUN5312DW1T1G MUN5313DW1T1 MUN5313DW1T1G MUN5314DW1T1 MUN5314DW1T1G Text: MUN5311DW1T1 Series Preferred Devices Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base	Original	MUN5311DW1T1 OT-363 MUN5311DW1T1/D MUN5311DW1T1G MUN5312DW1T1 MUN5312DW1T1G MUN5313DW1T1 MUN5313DW1T1G MUN5314DW1T1 MUN5314DW1T1G	PDF
NSVMUN5333 Abstract: SMUN5311DW1T1G NSVMUN5333DW1T1G Transistor BFR 93 Text: MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series Dual Bias Resistor Transistors http://onsemi.com NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor BRT contains a single transistor with	Original	MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1GSeries MUN5311DW1T1G OT-363 MUN5311DW1T1/D NSVMUN5333 SMUN5311DW1T1G NSVMUN5333DW1T1G Transistor BFR 93	PDF
Transistor BFR 93 Abstract: No abstract text available Text: MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series Dual Bias Resistor Transistors http://onsemi.com NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor BRT contains a single transistor with	Original	MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1Gâ MUN5311DW1T1G MUN5311DW1T1/D Transistor BFR 93	PDF
MUN5311DW1T1 Abstract: MUN5312DW1T1 MUN5313DW1T1 MUN5314DW1T1 MUN5315DW1T1 MUN5316DW1T1 MUN5316DW1T1G MUN5330DW1T1 LM3661TL-1.25 Text: MUN5311DW1T1 Series Preferred Devices Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base	Original	MUN5311DW1T1 OT-363 MUN5311DW1T1/D MUN5312DW1T1 MUN5313DW1T1 MUN5314DW1T1 MUN5315DW1T1 MUN5316DW1T1 MUN5316DW1T1G MUN5330DW1T1 LM3661TL-1.25	PDF
Untitled Abstract: No abstract text available Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon LBCX70GLT1G LBCX70JLT1G LBCX70KLT1G Featrues Pb-Free Package is Available. Ordering Information Device Marking LBCX70GLT1G LBCX70GLT3G LBCX70JLT1G LBCX70JLT3G LBCX70KLT1G AG AG AJ AJ AK Shipping	Original	LBCX70GLT1G LBCX70JLT1G LBCX70KLT1G LBCX70GLT3G LBCX70JLT3G 3000/Tape 10000/Tape	PDF
ztx605 Abstract: FCX605 FCX605TA SOT223 Text: FCX605 120V NPN SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR SUMMARY VCEO=120V; VCE sat = 1V; IC= 1A DESCRIPTION This new NPN Darlington transistor provides users with very efficeint performance combining low VCE (sat) and very high Hfe to give extremely low	Original	FCX605 OT223 ztx605 FCX605 FCX605TA SOT223	PDF
IGBT Battery 120 watt Charger circuit diagrams Abstract: tl494 spice model four relay stabilizer circuit diagram 650 va gsm door lock circuit diagram MRC 433 mosfet MC34066 SOLUTION FOR SMPS USING TL494 MOSFET ESD Rated TL594 phone charger car power inverter TL494 Text: BRD8016/D Rev. 0, Nov-2000 Wireless Component Solutions for Handsets and Accessories Wireless Component Solutions for Handsets and Accessories BRD8016/D Rev. 0, Nov–2000  SCILLC, 2000 “All Rights Reserved’’ WIRELESS EZFET is a trademark of Semiconductor Components Industries, LLC SCILLC .	Original	BRD8016/D Nov-2000 r14525 IGBT Battery 120 watt Charger circuit diagrams tl494 spice model four relay stabilizer circuit diagram 650 va gsm door lock circuit diagram MRC 433 mosfet MC34066 SOLUTION FOR SMPS USING TL494 MOSFET ESD Rated TL594 phone charger car power inverter TL494	PDF
BC517 spice model Abstract: bc547 spice model bc548 spice model h1 m6c MPS6595 bc557 Spice Model BF245 A spice spice model bf199 BC640 SPICE model transistor motorola Selector Guide Plastic-Encapsulated Transistors GreenLineTM Portfolio Devices S Text: Selector Guide 1 Plastic-Encapsulated Transistors 2 GreenLine Portfolio Devices 3 Small-Signal Field-Effect Transistors and MOSFETs 4 Small-Signal Tuning and Switching Diodes 5 Tape and Reel Specifications and Packaging Specifications 6 Surface Mount Information	Original	VN2410L BC517 spice model bc547 spice model bc548 spice model h1 m6c MPS6595 bc557 Spice Model BF245 A spice spice model bf199 BC640 SPICE model transistor motorola Selector Guide Plastic-Encapsulated Transistors GreenLineTM Portfolio Devices S	PDF
MRF18060A Abstract: No abstract text available Text: Document Number: MRF18060A Rev. 11, 10/2008 Freescale Semiconductor Technical Data LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF18060ALR3 LIFETIME BUY Designed for PCN and PCS base station applications with frequencies from	Original	MRF18060A MRF18060ALR3 MRF18060A	PDF
Z1 Transistor Abstract: smd transistor marking j2 smd transistor marking z3 465A MARKINGS MRF18060A Text: Freescale Semiconductor Technical Data Document Number: MRF18060A Rev. 10, 10/2008 RF Power Field Effect Transistor MRF18060ALSR3 Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	MRF18060A MRF18060ALSR3 MRF18060A Z1 Transistor smd transistor marking j2 smd transistor marking z3 465A MARKINGS	PDF
TRANSISTOR C 4460 Abstract: AT-41533 544 code marking amplifier zo 103 ma AT-41511 AT-41511-BLK AT-41511-TR1 AT-41533-BLK AT-41533-TR1 S21E Text: General Purpose, Low Noise NPN Silicon Bipolar Transistor Technical Data AT-41511 AT-41533 Features Description • General Purpose NPN Bipolar Transistor • 900 MHz Performance: AT-41511: 1 dB NF, 15.5 dB GA AT-41533: 1 dB NF, 14.5 dB GA • Characterized for 3, 5, and	Original	AT-41511 AT-41533 AT-41511: AT-41533: OT-23 OT-143 AT-41511 OT-23, TRANSISTOR C 4460 AT-41533 544 code marking amplifier zo 103 ma AT-41511-BLK AT-41511-TR1 AT-41533-BLK AT-41533-TR1 S21E	PDF
mps901 Abstract: MRF901 Text: MOTOROLA Order this document by MMBR901LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon MMBR901LT1, T3 High-Frequency Transistor MPS901 MRF901 Designed primarily for use in high–gain, low–noise small–signal amplifiers for operation up to 2.5 GHz. Also usable in applications requiring fast switching	Original	MMBR901LT1/D MMBR901LT1, MPS901 MRF901 MRF9011LT1 MRF9011LT1) MRF901	PDF
HP11608A Abstract: MRF0211LT1 MRF5711LT1 S212 Text: MOTOROLA Order this document by MRF0211LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor MRF0211LT1 . . . designed primarily for use in the high–gain, low–noise small–signal amplifiers for operation up to 3.5 GHz. Also usable in applications requiring fast	Original	MRF0211LT1/D MRF0211LT1 MRF5711LT1 MRF0211LT1/D* HP11608A MRF0211LT1 MRF5711LT1 S212	PDF

j288 Abstract: marking TRANSISTOR SMD nf c4 Text: Document Number: MRF18060A Rev. 8, 3/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF18060ALR3 MRF18060ALSR3 Designed for PCN and PCS base station applications with frequencies from	Original	MRF18060A MRF18060ALR3 MRF18060ALSR3 MRF18060A j288 marking TRANSISTOR SMD nf c4	PDF
motorola regulator Abstract: 103 potentiometer MRF18060A Text: Freescale Semiconductor Technical Data MRF18060A Rev. 7, 1/2005 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs MRF18060AR3 MRF18060ALSR3 Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	MRF18060A GSM1805 MRF18060AR3 MRF18060ALSR3 motorola regulator 103 potentiometer	PDF
MRF18060A Abstract: transistor 6 pin SMD Z2 BC847 GSM1800 LP2951 MRF18060 MRF18060ALR3 MRF18060ALSR3 smd z5 transistor Text: Freescale Semiconductor Technical Data Document Number: MRF18060A Rev. 9, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF18060ALR3 MRF18060ALSR3 Designed for PCN and PCS base station applications with frequencies from	Original	MRF18060A MRF18060ALR3 MRF18060ALSR3 MRF18060ALR3 MRF18060A transistor 6 pin SMD Z2 BC847 GSM1800 LP2951 MRF18060 MRF18060ALSR3 smd z5 transistor	PDF
smd transistor marking z8 Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MRF18090B Rev. 6, 12/2004 RF Power Field Effect Transistors MRF18090BR3 MRF18090BSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	MRF18090B MRF18090BR3 MRF18090BSR3 smd transistor marking z8	PDF
Untitled Abstract: No abstract text available Text: Document Number: MRF18090B Rev. 7, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF18090BR3 MRF18090BSR3 Designed for GSM and EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	MRF18090B MRF18090BR3 MRF18090BSR3 MRF18090BR3	PDF
MRF5811 Abstract: MRF5811L TRANSISTOR SF 128 HP11590B HP11590 Text: MOTOROLA Order this document by MRF5811LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF5811LT1 NPN Silicon High-Frequency Transistor • • • • • • • • Designed for high current, low power amplifiers up to 1.0 GHz. Low Noise 2.0 dB @ 500 MHz	Original	MRF5811LT1/D MRF5811LT1 MRF5811LT1 MRF5811LT1/D MRF5811 MRF5811L TRANSISTOR SF 128 HP11590B HP11590	PDF
UAA 1006 Abstract: manual* cygnus sl 5000 transistor marking T79 ghz PC1658G NEC Ga FET marking code T79 gaas fet T79 pc1658 MC-7712 2SC5431 NEC U71 Text: NEC Offices NEC Electronics Europe GmbH Oberrather Str. 4 D-40472 Düsseldorf, Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 NEC Electronics Italiana S.R.L. Via Fabio Filzi, 25A I-20124 Milano Tel. (02) 66 75 41 Fax (02) 66 75 42 99 NEC Electronics (Germany) GmbH	Original	D-40472 I-20124 I-00139 D-30177 GB-MK14 D-81925 S-18322 F-78142 E-28007 UAA 1006 manual* cygnus sl 5000 transistor marking T79 ghz PC1658G NEC Ga FET marking code T79 gaas fet T79 pc1658 MC-7712 2SC5431 NEC U71	PDF
smd transistor marking z8 Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MRF18090B Rev. 6, 12/2004 RF Power Field Effect Transistors MRF18090BR3 MRF18090BSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	MRF18090B MRF18090BR3 MRF18090BSR3 smd transistor marking z8	PDF
Micro-X Marking 865 Abstract: Amplifier Micro-X Marking 865 ne02133 MARKING ic 18752 35 micro-X Package MARKING CODE F Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES • HIGH INSERTION GAIN: 18.5 dB at 500 MHz • LOW NOISE FIGURE: 1.5 dB at 500 MHz E • HIGH POWER GAIN: 12 dB at 2 GHz B • LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compression DESCRIPTION	Original	NE021 NE02107 NE2100 NE02107/NE02107B NE02130-T1 NE02133-T1B NE02135 NE02139-T1 Micro-X Marking 865 Amplifier Micro-X Marking 865 ne02133 MARKING ic 18752 35 micro-X Package MARKING CODE F	PDF
transistor marking PB C8 Abstract: NI-780S SMD transistor 2x sot 23 Text: Freescale Semiconductor Technical Data MRF18060B Rev. 6, 1/2005 RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFET Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	MRF18060B GSM1930 MRF18060BLSR3 transistor marking PB C8 NI-780S SMD transistor 2x sot 23	PDF

NPN TRANSISTOR SOT-89 MARKING AG Search Results

NPN TRANSISTOR SOT-89 MARKING AG Result Highlights (5)

NPN TRANSISTOR SOT-89 MARKING AG Datasheets Context Search

onsemi DEVICE BK

MUN5311DW1T1

NSVMUN5333

Transistor BFR 93

MUN5311DW1T1

Untitled

ztx605

IGBT Battery 120 watt Charger circuit diagrams

BC517 spice model

MRF18060A

Z1 Transistor

TRANSISTOR C 4460

mps901

HP11608A

j288

motorola regulator

MRF18060A

smd transistor marking z8

Untitled

MRF5811

UAA 1006

smd transistor marking z8

Micro-X Marking 865

transistor marking PB C8