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    NPN TRANSISTOR SOT89 Search Results

    NPN TRANSISTOR SOT89 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8515 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation

    NPN TRANSISTOR SOT89 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BFQ19

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFQ19 NPN 5 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 5 GHz wideband transistor DESCRIPTION BFQ19 PINNING NPN transistor in a SOT89 plastic


    Original     		BFQ19 BFQ19 PDF

    Philips FA 145

    Abstract: BFQ17
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFQ17 NPN 1 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 1 GHz wideband transistor DESCRIPTION BFQ17 PINNING NPN transistor in a SOT89 plastic


    Original     		BFQ17 MBK514 Philips FA 145 BFQ17 PDF

    sot89 "NPN TRANSISTOR"

    Abstract: npn TRANSISTOR SOT89 BFQ18A
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFQ18A NPN 4 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION BFQ18A PINNING NPN transistor in a plastic SOT89


    Original     		BFQ18A MBK514 sot89 "NPN TRANSISTOR" npn TRANSISTOR SOT89 BFQ18A PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UDT1605 Preliminary NPN EPITAXIAL SILICON TRANSISTOR 120V NPN SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR  DESCRIPTION The UTC UDT1605 is an NPN Darlington transistor. Utilizing UTC’s advanced techonology, UDT1605 features ultra-high DC


    Original     		UDT1605 UDT1605 UDT1605G-AB3-R OT-89 QW-R208-048 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD1664 NPN SILICON TRANSISTOR MEDIUM POWER NPN TRANSISTOR  DESCRIPTION The UTC 2SD1664 is an epitaxial planar type NPN silicon transistor.  FEATURES *Low VCE SAT : VCE (SAT)= 0.15V(Typ.) (IC/IB= 500mA/50mA) * Complement the 2SB1132.


    Original     		2SD1664 2SD1664 500mA/50mA) 2SB1132. 2SD1664G-x-AB3-R 2SD1664G-x-AE3-R OT-89 OT-23 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD HE8050 NPN SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR  DESCRIPTION The UTC HE8050 is a low voltage high current small signal NPN transistor, designed for Class B push-pull 2W audio amplifier for


    Original     		HE8050 HE8050 HE8550 HE8050L-x-AB3-R HE8050G-x-AB3-R HE8050L-x-AE3-R HE8050G-x-AE3-R HE8050L-x-T92-B HE8050G-x-T92-B HE8050L-x-T92-K PDF

    he8050

    Abstract: HE8550 HE8050G
    Text: UNISONIC TECHNOLOGIES CO., LTD HE8050 NPN SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR „ DESCRIPTION The UTC HE8050 is a low voltage high current small signal NPN transistor, designed for Class B push-pull 2W audio amplifier for


    Original     		HE8050 HE8050 HE8550 HE8050-x-AB3-R HE8050-x-AE3-R HE8050-x-T92-B HE8050-x-T92-K HE8050-x-T9N-B HE8050-x-T9N-K HE8050L-x-AB3-R HE8550 HE8050G PDF

    he8050l

    Abstract: he8050 HE8050-x-AB3-R HE8050G DA QW he8050 d HE8550
    Text: UNISONIC TECHNOLOGIES CO., LTD HE8050 NPN SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR „ DESCRIPTION The UTC HE8050 is a low voltage high current small signal NPN transistor, designed for Class B push-pull 2W audio amplifier for


    Original     		HE8050 HE8050 HE8550 HE8050L HE8050G HE8050-x-AB3-R HE8050-x-AE3-R HE8050-x-T92-B HE8050-x-T92-K HE8050-x-T9N-B he8050l HE8050-x-AB3-R HE8050G DA QW he8050 d HE8550 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD HE8050 NPN SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR  DESCRIPTION The UTC HE8050 is a low voltage high current small signal NPN transistor, designed for Class B push-pull 2W audio amplifier for


    Original     		HE8050 HE8050 HE8550 HE8050L-x-AB3-R HE8050G-x-AB3-R OT-89 HE8050L-x-AE3-R HE8050G-x-AE3-R OT-23 HE8050L-x-T92-B PDF

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SD1664 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER NPN TRANSISTOR DESCRIPTION The UTC 2SD1664 is an epitaxial planar type NPN silicon transistor. 1 FEATURES *Low VCE sat : VCE (sat)= 0.15V(Typ) (Ic/IB= 500mA/50mA) *Complement the 2SB1132. SOT-89 1:EMITTER


    Original     		2SD1664 2SD1664 500mA/50mA) 2SB1132. OT-89 QW-R208-025 PDF

    2SD1664

    Abstract: 2SB1132
    Text: UTC 2SD1664 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER NPN TRANSISTOR DESCRIPTION The UTC 2SD1664 is an epitaxial planar type NPN silicon transistor. 1 FEATURES *Low VCE sat : VCE (sat)= 0.15V(Typ) (Ic/IB= 500mA/50mA) *Complement the 2SB1132. SOT-89 1:EMITTER


    Original     		2SD1664 2SD1664 500mA/50mA) 2SB1132. OT-89 QW-R208-025 2SB1132 PDF

    Untitled

    Abstract: No abstract text available
    Text: UTC HE8050 NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR DESCRIPTION The UTC HE8050 is a low voltage high current small signal NPN transistor, designed for Class B push-pull 2W audio amplifier for portable radio and general purpose


    Original     		HE8050 HE8050 HE8550 OT-89 QW-R208-013 PDF

    2SD1664L

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD1664 NPN SILICON TRANSISTOR MEDIUM POWER NPN TRANSISTOR DESCRIPTION 1 The UTC 2SD1664 is an epitaxial planar type NPN silicon transistor. FEATURES SOT-89 *Low VCE SAT : VCE (SAT)= 0.15V(Typ) (IC/IB= 500mA/50mA) *Complement the 2SB1132.


    Original     		2SD1664 2SD1664 OT-89 500mA/50mA) 2SB1132. 2SD1664L 2SD1664-x-AB3-R 2SD1664L-x-AB3-R 2SD1664L PDF

    Untitled

    Abstract: No abstract text available
    Text: UTC HE8050 NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR DESCRIPTION The UTC HE8050 is a low voltage high current small signal NPN transistor, designed for Class B push-pull 2W audio amplifier for portable radio and general purpose


    Original     		HE8050 HE8050 HE8550 OT-89 QW-R208-013 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD USS4350 NPN SILICON TRANSISTOR 50V, 3A NPN LOW VCE SAT TRANSISTOR  DESCRIPTION The UTC USS4350 is a low VCE (SAT) NPN transistor designed for applications, such as: DC/DC converter, supply line switching, battery charger, linear voltage regulation, driver in low supply


    Original     		USS4350 USS4350 USS5350 USS4350L-AA3-R USS4350G-AA3-R USS4350L-AB3-R USS435at QW-R207-022 PDF

    free transistor and ic equivalent data

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD USS4350 NPN SILICON TRANSISTOR 50V, 5A NPN LOW VCE SAT TRANSISTOR „ DESCRIPTION The UTC USS4350 is a low VCE (SAT) NPN transistor designed for applications, such as: DC/DC converter, supply line switching, battery charger, linear voltage regulation, driver in low supply


    Original     		USS4350 USS4350 USS5350 USS4350L-AA3-R USS4350G-AA3-R USS4350L-AB3-R USS4350G-AB3-R QW-R207-022 free transistor and ic equivalent data PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD HE8050 NPN SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR  DESCRIPTION The UTC HE8050 is a low voltage high current small signal NPN transistor, designed for Class B push-pull 2W audio amplifier for portable radio and general purpose applications.


    Original     		HE8050 HE8050 HE8550 HE8050G-x-AB3-R OT-89 HE8050G-x-AE3-R OT-23 HE8050L-x-T92-B HE8050G-x-T92-B HE8050L-x-T92-K PDF

    Inductive Load Driver

    Abstract: USS4
    Text: UNISONIC TECHNOLOGIES CO., LTD USS4350 Preliminary NPN SILICON TRANSISTOR 50V, 5A NPN LOW VCE SAT TRANSISTOR „ DESCRIPTION The UTC USS4350 is a low VCE (SAT) NPN transistor designed for applications, such as: DC/DC converter, supply line switching, battery charger, linear voltage regulation, driver in low supply


    Original     		USS4350 USS4350 USS5350 USS4350G-AA3-R USS4350G-AB3-R OT-223 OT-89 QW-R207-022 Inductive Load Driver USS4 PDF

    HE8050

    Abstract: HE8050L HE8050L-x-AE3-R HE8050-x-AB3-R
    Text: UNISONIC TECHNOLOGIES CO., LTD HE8050 NPN SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR 3 1 2 SOT-89 1 SOT-23 DESCRIPTION The UTC HE8050 is a low voltage high current small signal NPN transistor, designed for Class B push-pull 2W audio amplifier for


    Original     		HE8050 HE8050 OT-89 OT-23 HE8550 O-92NL HE8050L HE8050-x-AB3-R HE8050L-x-AB3-R HE8050-x-AE3-R HE8050L HE8050L-x-AE3-R PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD HE8050 NPN SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR 3 1 2 SOT-89 1 SOT-23 DESCRIPTION The UTC HE8050 is a low voltage high current small signal NPN transistor, designed for Class B push-pull 2W audio amplifier for


    Original     		HE8050 OT-89 OT-23 HE8050 HE8550 O-92NL HE8050L HE8050-x-AB3-R HE8050L-x-AB3-R HE8050-x-AE3-R PDF

    Untitled

    Abstract: No abstract text available
    Text: ᒦ৖ൈहࡍྯ૵਌ Medium Power Transistor NPN Medium Power Transistor(NPN) DESCRIPTION & FEATURES 1) Low VCE (sat) =0.5V(Typ) (IC /IB =2A/0.2A) 2) Epitaxial planar type, NPN silicon transistor FHD1766 ᒦ৖ൈहࡍྯ૵਌ 概述及特點 SOT-89


    Original     		FHD1766 OT-89 OT-89 FHD1766P FHD1766Q FHD1766R CHARA120 100MHz PDF

    ZXTN5551Z

    Abstract: TS16949 ZXTP5401Z ZXTN5551ZTA
    Text: ZXTN5551Z 160V, SOT89, NPN high voltage transistor Summary BVCEO > 160V BVEBO > 6V IC cont = 600mA PD = 1.2W Complementary part number ZXTP5401Z Description C A high voltage NPN transistor in a small outline surface mount package Features • 160V rating


    Original     		ZXTN5551Z 600mA ZXTP5401Z ZXTN5551ZTA D-81541 ZXTN5551Z TS16949 ZXTP5401Z ZXTN5551ZTA PDF

    2SC2945

    Abstract: QK SOT89 2SC2954 mark qk sot
    Text: DATA SHEET SILICON TRANSISTOR 2SC2954 NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC2954 is an NPN epitaxial silicon transistor disigned for Unit: mm low noise wide band amplifier and buffer amplifier of OSC, for VHF


    Original     		2SC2954 2SC2954 2SC2945 QK SOT89 mark qk sot PDF

    2SC2945

    Abstract: 2SC2954 tc1458a IC 4025
    Text: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC2954 NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DESCRIPTION The 2SC2954 is an NPN epitaxial silicon transistor disigned for PACKAGE DIMENSIONS low noise wide band amplifier and buffer amplifier of OSC, for VHF


    Original     		2SC2954 2SC2954 2SC2945 tc1458a IC 4025 PDF