transistor npn 100w amplifier
Abstract: rf amplifier 100w NTE470 amplifier 100w w amplifier 30mhz
Text: NTE470 Silicon NPN Transistor RF Power Output Description: The NTE470 is a silicon NPN RF transistor in a W52 type package designed primarily for application as a high–power linear amplifier from 2.0 to 30MHz. Features: D Specified 12.5V, 30MHz Characteristics:
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NTE470
NTE470
30MHz.
30MHz
150mA,
001MHz
transistor npn 100w amplifier
rf amplifier 100w
amplifier 100w
w amplifier 30mhz
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NTE470
Abstract: transistor npn 100w amplifier transistor npn 100w amplifier TO-3P
Text: NTE470 Silicon NPN Transistor RF Power Output Description: The NTE470 is a silicon NPN RF transistor in a W52 type package designed primarily for application as a high–power linear amplifier from 2.0 to 30MHz. Features: D Specified 12.5V, 30MHz Characteristics:
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NTE470
NTE470
30MHz.
30MHz
150mA,
001MHz
transistor npn 100w amplifier
transistor npn 100w amplifier TO-3P
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NTE338F
Abstract: 20W power transistor
Text: NTE338F Silicon NPN Transistor RF Power Amp, Driver Description: The NTE338F is a silicon NPN transistor in a W52K type package designed primarily for use as a power linear amplifier from 2 to 30MHz. Features: D Specified 12.5V, 30MHz Characteristics: Output Power = 20W PEP
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NTE338F
NTE338F
30MHz.
30MHz
001MHz
30MHz
20W power transistor
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NTE338F
Abstract: No abstract text available
Text: NTE338F Silicon NPN Transistor RF Power Amp, Driver Description: The NTE338F is a silicon NPN transistor in a W52K type package designed primarily for use as a power linear amplifier from 2 to 30MHz. Features: D Specified 12.5V, 30MHz Characteristics: Output Power = 20W PEP
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NTE338F
NTE338F
30MHz.
30MHz
-30dB
001MHz
30MHz
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VK200 rfc
Abstract: vk200 vk200* FERROXCUBE vk200 rfc with 6 turns NTE320 T72 5VDC NTE320F vk200-20
Text: NTE320/NTE320F Silicon NPN RF Power Transistor 40W @ 175MHz Description: The NTE320 and NTE320F are silicon NPN power transistors designed for 12.5V VHF large–signal amplifier applications required in commercial and industrial equipment operating to 300MHz.
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NTE320/NTE320F
175MHz
NTE320
NTE320F
300MHz.
175MHz
NTE320
NTE320F
1000pF
100pF
VK200 rfc
vk200
vk200* FERROXCUBE
vk200 rfc with 6 turns
T72 5VDC
vk200-20
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Untitled
Abstract: No abstract text available
Text: RN4986FS TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN4986FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Equivalent Circuit and Bias Resistor Values
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RN4986FS
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Untitled
Abstract: No abstract text available
Text: RN4986FS TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN4986FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Equivalent Circuit and Bias Resistor Values
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RN4986FS
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RN4986FS
Abstract: No abstract text available
Text: RN4986FS TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN4986FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Equivalent Circuit and Bias Resistor Values
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RN4986FS
RN4986FS
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NTE335
Abstract: J341 NPN 250W NTE336 n-p-n r.f. power transistors J201 equivalent
Text: NTE335 & NTE336 Silicon NPN Transistor RF Power Output Description: The NTE335 and NTE336 are silicon NPN RF power transistors designed for power amplifier applications in industrial, commercial and amateur radio equipment to 30MHz. Features: D Specified 12.5V, 30MHz Characteristics:
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NTE335
NTE336
NTE335
NTE336
30MHz.
30MHz
1817pF
777pF
J341
NPN 250W
n-p-n r.f. power transistors
J201 equivalent
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Untitled
Abstract: No abstract text available
Text: RN4986FS TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN4986FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 0.8±0.05 0.1±0.05 Q2 C C R1 fS6 R1 R2
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RN4986FS
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RN4986FS
Abstract: No abstract text available
Text: RN4986FS TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN4986FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Q2 C C R1 fS6 R1 R2 B R2 B E 6 2 5 3 4
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RN4986FS
RN4986FS
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S852T
Abstract: S852TW transistor d 945
Text: S852T/S852TW Vishay Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 0.2 mA to 5 mA. Features D Low supply voltage
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S852T/S852TW
S852T
S852TW
D-74025
20-Jan-99
transistor d 945
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Untitled
Abstract: No abstract text available
Text: S852T/S852TW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 0.2 mA to 5 mA. Features D Low supply voltage
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S852T/S852TW
S852T
S852TW
D-74025
20-Jan-99
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S852T
Abstract: S852TW
Text: S852T/S852TW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 0.2 mA to 5 mA. Features D Low supply voltage
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S852T/S852TW
S852T
S852TW
D-74025
20-Jan-99
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S852TW
Abstract: NPN transistor mhz s-parameter
Text: S852TW Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low-noise and high-gain broadband amplifiers at collector currents from 0.2 mA to 5 mA. Features D Low supply voltage D Low current consumption
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S852TW
D-74025
07-Nov-97
S852TW
NPN transistor mhz s-parameter
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PCR 406 J transistor
Abstract: transistor PCR 406 HM data smd transistor 44w transistor PCR 406 HM transistor pcr 406 transistor pcr 406 j 2N3375a smd transistor marking 28W s41b 2N3553
Text: MIL-s-19500/341B 2! M,KII 196S SUPERSEDING ML-s -19 W0/341A 2 November 1966 See 6.3. MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NpN, SI I.lCQN, HIGH. FREQUENCY, TYPES 2N3315, TX2N337S, 2N3553, TX2N3553, 2144440 AND TX2N4440 POWER ‘his smclficctim
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MIL-s-19500/341B
W0/341A
2N3315,
TX2N337S,
2N3553,
TX2N3553,
TX2N4440
2N3375
gik16wwlhma
lns81
PCR 406 J transistor
transistor PCR 406 HM data
smd transistor 44w
transistor PCR 406 HM
transistor pcr 406
transistor pcr 406 j
2N3375a
smd transistor marking 28W
s41b
2N3553
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors ^ 5 3 ^ 3 1 0D31815 W5 APX Product specification NPN 5 GHz wideband transistor ^ BFR91 N AMER PHILIPS/DISCRETE DESCRIPTION bRE » PINNING NPN transistor in a plastic SOT37 envelope primarily intended for use in RF amplifiers such as in aerial
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0D31815
BFR91
BFR91/02
ON4186)
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Z60N
Abstract: No abstract text available
Text: MITSUBISHI RF POWER TRANSISTOR bSMTflST QÜ17703 ÔTT 2SC4240 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION 2SC 4240 is a silicon NPN epitaxial planar type transistor specifi cally designed for VHF power amplifier applications. OUTLINE DRAWING Dim ensions in mm
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2SC4240
peg13dB.
220pF,
1000pF,
4700p
Z60N
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Untitled
Abstract: No abstract text available
Text: MP4301 T O SH IB A TOSHIBA POWER TRANSISTOR MODULE SILICON NPN EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR 4 IN 1 MP4301 INDUSTRIAL APPLICATIONS Unit in mm HIGH POWER SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD SWITCHING. 31.5 ± 0.2
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MP4301
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Untitled
Abstract: No abstract text available
Text: T O SH IB A TOSHIBA PO W ER TRANSISTOR M ODULE MP4503 SILICON NPN & PNP EPITAXIAL TYPE DARLINGTON PO W ER TRANSISTOR 4 IN 1 MP4503 HIGH PO W ER SWITCHING APPLICATIONS. H AM M ER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD INDUSTRIAL APPLICATIONS Unit in mm
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MP4503
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Untitled
Abstract: No abstract text available
Text: MP4020 T O SH IB A TOSHIBA PO W ER TRANSISTOR M ODULE SILICON NPN EPITAXIAL TYPE DARLINGTON PO W ER TRANSISTOR 4 IN 1 MP4020 INDUSTRIAL APPLICATIONS Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. H AM M ER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD SWITCHING.
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MP4020
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lc 945 p transistor
Abstract: No abstract text available
Text: _ S852T/S852TW VfSMAY ▼ Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ M Applications For low noise and high gain broadband amplifiers at collector currents from 0.2 mA to 5 mA.
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S852T/S852TW
S852T
S852TW
20-Jan-99
lc 945 p transistor
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transistor LC 945
Abstract: No abstract text available
Text: Temic S852TW Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. ^ Observe precautions for handling. M Applications For low-noise and high-gain broadband amplifiers at collector currents from 0.2 mA to 5 mA. Features • Low supply voltage
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S852TW
13fi32
D-74025
07-Nov-97
transistor LC 945
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 2SC2668 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE PCT PROCESS 2SC2668 Unit in mm HIGH FREQUENCY AMPLIFIER APPLICATIONS. FM, RF, IF AMPLIFIER APLIFIER APPLICATIONS. • • Small Reverse Transfer Capacitance : Cre = 0.70pF (Typ.) Low Noise Figure
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2SC2668
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