KTD863 transistor
Abstract: NPN triple diffused 60V DC current gain 800 ktd863 ktb764
Text: SEMICONDUCTOR KTD863 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR VOLTAGE REGULATOR, RELAY, LAMP DRIVER, INDUSTRIAL USE B D FEATURES A ・High Voltage : VCEO=60V Min. . ・High Current : IC(Max.)=1A. P DEPTH:0.2 ・High Transition Frequency : fT=150MHz(Typ.).
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KTD863
150MHz
KTB764.
KTD863 transistor
NPN triple diffused 60V DC current gain 800
ktd863
ktb764
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driver transistor hfe 60
Abstract: KTB764 KTD863 KTD863 transistor
Text: SEMICONDUCTOR KTD863 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR VOLTAGE REGULATOR, RELAY, RAMP DRIVER, INDUSTRIAL USE B D FEATURES A ᴌHigh Voltage : VCEO=60V Min. . ᴌHigh Current : IC(Max.)=1A. P DEPTH:0.2 ᴌHigh Transition Frequency : fT=150MHz(Typ.).
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KTD863
150MHz
KTB764.
driver transistor hfe 60
KTB764
KTD863
KTD863 transistor
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C3679 equivalent
Abstract: transistor c3835 a1695 power transistor SK C4020 b1686 sk c4467 c4381 SK C5071 transistor c3856 npn C4020 TO220
Text: POWER TRANSISTORS SANKEN ELECTRIC CO.,LTD. Bulletin No T01EE0 July,2001 C AU T I O N / WA R N I N G information in this publication has been carefully checked and is believed to be • The accurate; however, no responsibility is assumed for inaccuracies.
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T01EE0
H1-T01EE0-0107020SB
C3679 equivalent
transistor c3835
a1695 power transistor
SK C4020
b1686
sk c4467
c4381
SK C5071
transistor c3856 npn
C4020 TO220
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d2494
Abstract: c4381 B1625 equivalent transistor a1668 transistor a1695 power transistor D2495 c3852a D1796 power transistor c5287 D2493
Text: C AU T I O N / WA R N I N G information in this publication has been carefully checked and is believed to be • The accurate; however, no responsibility is assumed for inaccuracies. reserves the right to make changes without further notice to any products herein in
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n6to4467
2SD211to214
2SC4468
2SC1828
2SC3832
2SA768to769
2SA1262
2SA770to771
2SA1725
2SA957to958
d2494
c4381
B1625 equivalent transistor
a1668 transistor
a1695 power transistor
D2495
c3852a
D1796 power transistor
c5287
D2493
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c5287 equivalent transistor
Abstract: transistor d2495 c4131 TRANSISTOR REPLACEMENT GUIDE B1560 equivalent Sanken Power Transistors C3679 equivalent shinetsu G746 C3834 transistor c4468 power transistor equivalent 2SC3854 equivalent
Text: C AU T I O N / WA R N I N G information in this publication has been carefully checked and is believed to be • The accurate; however, no responsibility is assumed for inaccuracies. reserves the right to make changes without further notice to any products herein in
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2SA1693
2SA1694
2SA1695
2SA1725
2SA1907
2SA1908
2SA1909
2SC3179
2SC3852
2SC4511
c5287 equivalent transistor
transistor d2495
c4131 TRANSISTOR REPLACEMENT GUIDE
B1560 equivalent
Sanken Power Transistors
C3679 equivalent
shinetsu G746
C3834 transistor
c4468 power transistor equivalent
2SC3854 equivalent
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Untitled
Abstract: No abstract text available
Text: SILICON NPN TRIPLE DIFFUSED TYPE 2SD2462 U nit in mm POWER AM PLIFIER APPLICATIONS • • High DC Current Gain : hpE = 800~3200 V qe = 5V, Ic = 0.2A Low Collector Saturation Voltage : v CE(sat) = °-4V (Typ.)(Ic = lA, Iß = 10mA) M A X IM U M RATINGS (Ta = 25°C)
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2SD2462
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Untitled
Abstract: No abstract text available
Text: SILICON NPN TRIPLE DIFFUSED TYPE 2SD2461 Unit in mm P O W E R A M P L IF IE R A P P L IC A T IO N S • • High DC Current Gain : hF£ = 800—3200 Vc e = 5V, Ic = 0.1A Low Collector Saturation Voltage : v CE(sat) = °-3V (Typ.) (Ic = 0.5A, Iß = 5mA) M A X IM U M
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2SD2461
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2SD2353
Abstract: No abstract text available
Text: SILICON NPN TRIPLE DIFFUSED TYPE 2SD2353 POWER AMPLIFIER APPLICATIONS : hpE=800~3200 . High DC Current Gain V c e = 5V , Ic=0.2A . Low Collector Saturation Voltage : VCE(sat)=0.4 V ( T y p .) (IC=1A, lB=10mA) MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL
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2SD2353
2SD2353
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2SD2461
Abstract: No abstract text available
Text: TOSHIBA 2SD2461 2SD2461 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm 8.0 ± 0.2 • • High DC Current Gain : hpg i = 800~3200 Low Collector Saturation Voltage : V q £ (sat) = 0.3V (Typ.) 25°C) CHARACTERISTIC
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2SD2461
2SD2461
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SD2352 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • High DC Current Gain • SILICON NPN TRIPLE DIFFUSED TYPE 2SD2352 U nit in mm : h]?E = 800~3200 Low Collector Saturation Voltage : V ç e sat —0-3V (Typ.) MAXIMUM RATINGS (Ta = 25°C)
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2SD2352
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D2461
Abstract: transistor d2461
Text: 2SD2461 TOSHIBA TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE 2S D2461 Unit in mm Rn+n ? High DC Current Gain : hpj] i = 800~3200 Low Collector Saturation Voltage : V ^ e (Typ.) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC
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2SD2461
D2461
D2461
transistor d2461
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Untitled
Abstract: No abstract text available
Text: TO SHIBA 2SD2461 2SD2461 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm ftn + n y • • High DC Current Gain : hpE l = 800~3200 Low Collector Saturation Voltage : V q e (sat) = 0-3V (Typ.) M A X IM U M RATINGS (Ta = 25°C)
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2SD2461
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Untitled
Abstract: No abstract text available
Text: TO SHIBA 2SD2462 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD2462 PO W ER AM PLIFIER APPLICATIONS. • High DC Current Gain ; hpg i = 800~3200 Low Collector Saturation Voltage : VCE(sat) = °-4V (Typ.) Complementary to 2SB1602 • • M A X IM U M RATINGS (Ta = 25°C)
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2SD2462
2SB1602
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2SD2353
Abstract: No abstract text available
Text: TOSHIBA 2SD2353 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD2353 Unit in mm PO W ER AM PLIFIER APPLICATIONS • • 10 ±0.3 High DC Current Gain : hpE = 800~3200 Low Collector Saturation Voltage : v CE sat = °-4V (TyP-) DC Current Gain Colleetor-Emitter Saturation
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2SD2353
2SD2353
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 2SD2353 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD2353 Unit in mm PO W ER AM PLIFIER APPLICATIONS 10±0.3 • High DC Current Gain : hpg = 800~3200 • Low Collector Saturation Voltage ^3.2 ±0.2 3 O 2.7±0.2 ^ Oi ro O : VCE sat = °-4V (TyP-)
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2SD2353
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100L
Abstract: 2SD2352
Text: TO SH IBA 2SD2352 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • • SILICON NPN TRIPLE DIFFUSED TYPE 2SD2352 Unit in mm High DC Current Gain : hpE = 800~3200 Low Collector Saturation Voltage : V q e sa t “ 0.3V (Typ.) MAXIMUM RATINGS (Tc = 25°C)
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2SD2352
100L
2SD2352
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2SD2461
Abstract: No abstract text available
Text: 2SD2461 TO SH IBA TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • • SILICON NPN TRIPLE DIFFUSED TYPE 2SD2461 Unit in mm High DC Current Gain : hpE l = 800~3200 Low Collector Saturation Voltage : V q e ( s a t ) “ 0.3V (Typ.) MAXIMUM RATINGS (Ta = 25°C)
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2SD2461
2SD2461
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Untitled
Abstract: No abstract text available
Text: 2SD2352 SILICON NPN TRIPLE DIFFUSED TYPE POWER AMPLIFIER APPLICATIONS Unit in mm 10± 0 .3 . High DC Current Gain : hFE=800~3200 V c e =5V, 0 3 .2 ± 0.2 2.7 _ —± 0 . 2 Ic = 0.1A . Low Collector Saturation Voltage : V CE(sat)=0.3V(Typ.) (IC =0.5A, lB=5mA)
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2SD2352
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2SD2461
Abstract: No abstract text available
Text: 2SD2461 TO SH IBA TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE 2SD2461 Unit in mm 8.0 ± 0.2 • • High DC Current Gain : hpE l = 800~3200 Low Collector Saturation Voltage : V q e ( s a t ) “ 0.3V (Typ.) MAXIMUM RATINGS (Ta = 25°C)
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2SD2461
2SD2461
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2SB1602
Abstract: 2SD2462
Text: TO SH IBA 2SD2462 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS. • • • SILICON NPN TRIPLE DIFFUSED TYPE 2SD2462 Unit in mm 8.0 ± 0.2 High DC Current Gain : ^FE l = 800~3200 Low Collector Saturation Voltage : v CE(sat) = °-4V (TyP-) Complementary to 2SB1602
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2SD2462
2SB1602
2SD2462
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2SB1602
Abstract: 2SD2462
Text: TO SH IBA 2SD2462 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • • • SILICON NPN TRIPLE DIFFUSED TYPE 2SD2462 Unit in mm 8.0 ± 0.2 High DC Current Gain : ^FE l = 800~3200 Low Collector Saturation Voltage : v CE(sat) = °-4V (TyP-) Complementary to 2SB1602
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2SD2462
2SB1602
2SD2462
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d2462
Abstract: No abstract text available
Text: TOSHIBA 2SD2462 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2S D 24 62 Unit in mm PO W ER AM PLIFIER APPLICATIONS. • High DC Current Gain : hpE 1 —800^3200 Low Collector Saturation Voltage : VCE (sat) = °-4V (TyP*) Complementary to 2SB1602 •
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2SD2462
2SB1602
d2462
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2SD2352
Abstract: No abstract text available
Text: TOSHIBA 2SD2352 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD2352 Unit in mm PO W ER AM PLIFIER APPLICATIONS 10 ±0.3 • High DC Current Gain : hp^ —800~3200 • Low Collector Saturation Voltage : V q £ sat = 0.3V (Typ.) ^3.2 ±0.2 "P o O 1.1
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2SD2352
2SD2352
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2SC510
Abstract: 2SC5102 2SC510-2SC512 2SC510 X 2SC512
Text: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA Sb DE J ^ D ^ S O 56L DISCRETE/OPTO J 7 41 d U D0D7mfl 1 'T‘~ 3 J~ e * 2SC51Ö " i2SC512i SILICON NPN TRIPLE DIFFUSED TYPE (PCT RPOCESS) Unit in nun HIGH FREQUENCY POWER AMPLIFIER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS.
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2SC51Ö
i2SC512i
2SC510)
2SC512)
800mW
2SA510
2SA512.
2SC510
2SC510
2SC5102
2SC510-2SC512
2SC510 X
2SC512
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