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    NPN VCE 100V Search Results

    NPN VCE 100V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8515 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation
    TTC021 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    2SC5198 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=140 V / IC=10 A / hFE=55~160 / VCE(sat)=2.0 V / TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation

    NPN VCE 100V Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    A08 transistor

    Abstract: No abstract text available
    Text: TSD965A Low Vcesat NPN Transistor TO-92 PRODUCT SUMMARY Pin Definition: 1. Emitter 2. Collector 3. Base BVCBO 100V BVCEO 20V IC 5A VCE SAT Features ● ● Ordering Information Low VCE(SAT) 0.35V @ IC / IB = 3A / 100mA (Typ.) Excellent DC current gain characteristics


    Original     		TSD965A 100mA TSD965ACT A08 transistor PDF

    3A 100V npn LOW SATURATION VOLTAGE

    Abstract: TSD2098 TSD2098A
    Text: TSD2098A Low Vcesat NPN Transistor SOT-89 PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCBO 100V BVCEO 20V IC 5A VCE SAT Features ● ● Ordering Information Low VCE(SAT) 0.35V @ IC / IB = 3A / 100mA (Typ.) Excellent DC current gain characteristics


    Original     		TSD2098A OT-89 100mA TSD2098ACY 3A 100V npn LOW SATURATION VOLTAGE TSD2098 TSD2098A PDF

    2sc4024

    Abstract: FM20 DSA0016508
    Text: 2SC4024 High hFE LOW VCE sat Silicon NPN Epitaxial Planar Transistor IEBO VEB=15V 10max µA V(BR)CEO IC=25mA 50min V VCE=4V, IC=1A 300 to 1600 3 A VCE(sat) IC=5A, IB=0.1A 0.5max V PC 35(Tc=25°C) W fT VCE=12V, IE=–0.5A 24typ MHz Tj 150 °C COB VCB=10V, f=1MHz


    Original     		2SC4024 O220F) 10max 50min 24typ 150typ 100x100x2 50x50x2 2sc4024 FM20 DSA0016508 PDF

    2SC4131

    Abstract: transistor 2sc4131 VEBO-15V
    Text: 2SC4131 LOW VCE sat Silicon NPN Epitaxial Planar Transistor V 60 to 360 VCE=1V, IC=5A IB 4 A VCE(sat) IC=5A, IB=80mA 0.5max PC 60(Tc=25°C) W VBE(sat) IC=5A, IB=80mA 1.2max V Tj 150 °C fT VCE=12V, IE=–1A 18typ MHz –55 to +150 °C COB VCB=10V, f=1MHz


    Original     		2SC4131 Pulse25) 10max 50min 18typ 210typ FM100 2SC4131 transistor 2sc4131 VEBO-15V PDF

    FZT696B

    Abstract: NPN Transistor VCEO 1000V transistor VCBO 1000V IC 100mA DSA003714 darlington NPN 1000V transistor
    Text: SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR FZT696B TYPICAL CHARACTERISTICS IC/IB=100 0.6 0.6 0.4 0.2 0.01 0.1 1 1.4 0.01 10 1 10 I+ - Collector Current Amps VCE(sat) v IC VCE(sat) v IC VCE=5V -55°C +25°C +100°C +175°C 1.6 1.5K 1K 0.8


    Original     		OT223 FZT696B 100mA 100mA, 200mA, 50MHz FZT696B NPN Transistor VCEO 1000V transistor VCBO 1000V IC 100mA DSA003714 darlington NPN 1000V transistor PDF

    UP1753

    Abstract: UP1753-AA3-R UP1753L-AA3-R
    Text: UNISONIC TECHNOLOGIES CO., LTD UP1753 NPN SILICON TRANSISTOR HIGH CURRENT LOW VCE SAT TRANSISTOR DESCRIPTION The UTC UP1753 is specially designed to have high current and low VCE(SAT) to suit for power amplifier application and power switching application.


    Original     		UP1753 UP1753 OT-223 300mV UP1753L UP1753-AA3-R UP1753L-AA3-R UP1753-AA3-R UP1753L-AA3-R PDF

    UP1753

    Abstract: UP1753-AA3-R UP1753L-AA3-R NPN 1A 100V SOT-223
    Text: UNISONIC TECHNOLOGIES CO., LTD UP1753 NPN SILICON TRANSISTOR HIGH CURRENT LOW VCE SAT TRANSISTOR DESCRIPTION The UTC UP1753 is specially designed to have high current and low VCE(SAT) to suit for power amplifier application and power switching application.


    Original     		UP1753 UP1753 OT-223 300mV UP1753L UP1753-AA3-R UP1753L-AA3-R UP1753-AA3-T UP1753L-AA3-T UP1753-AA3-R UP1753L-AA3-R NPN 1A 100V SOT-223 PDF

    20MH

    Abstract: FMMT459 FMMT459TA FMMT459TC
    Text: FMMT459 450V SILICON NPN HIGH VOLTAGE SWITCHING TRANSISTOR SUMMARY VCEO=450V; VCE sat = 100mV; IC= 150mA DESCRIPTION This new high voltage tranistor provides users with very effiecient performance combining low VCE (sat) and Hfe to give extremely low on state


    Original     		FMMT459 100mV; 150mA 150mA 625mW 20MH FMMT459 FMMT459TA FMMT459TC PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UP1753 NPN SILICON TRANSISTOR HIGH CURRENT LOW VCE SAT TRANSISTOR „ DESCRIPTION The UTC UP1753 is specially designed to have high current and low VCE(SAT) to suit for power amplifier application and power switching application.


    Original     		UP1753 UP1753 300mV UP1753L-AA3-R UP1753G-AA3-R OT-223 QW-R220-020 PDF

    UP1753

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UP1753 NPN SILICON TRANSISTOR HIGH CURRENT LOW VCE SAT TRANSISTOR  1 DESCRIPTION TO-252 The UTC UP1753 is specially designed to have high current and low VCE(SAT) to suit for power amplifier application and power switching application.


    Original     		UP1753 O-252 UP1753 300mV UP1753L-AA3-R UP1753G-AA3-R UP1753L-TN3-T UP1753G-TN3-T UP1753L-TN3-R UP1753G- PDF

    2scr375

    Abstract: No abstract text available
    Text: 2SCR375P Datasheet NPN 1.5A 120V Middle Power Transistor lOutline Parameter Value VCEO IC 120V 1.5A MPT3 Base Collector Emitter 2SCR375P SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Low VCE(sat) VCE(sat)=0.30V(Max.) (IC/IB=800mA/80mA)


    Original     		2SCR375P SC-62) OT-89> 800mA/80mA) R1102A 2scr375 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SCR372P Datasheet NPN 700mA 120V Middle Power Transistor lOutline Parameter Value VCEO IC 120V 700mA MPT3 Base Collector Emitter 2SCR372P SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 3) Low VCE(sat) VCE(sat)=0.30V(Max.) (IC/IB=500mA/50mA)


    Original     		2SCR372P 700mA 700mA SC-62) OT-89> 500mA/50mA) R1102A PDF

    ZXTN19100CZ

    Abstract: TS16949 ZXTN19100CZTA ZXTP19100CZ
    Text: ZXTN19100CZ 100V NPN medium power transistor in SOT89 Summary BVCEX > 200V BVCEO > 100V BVECO > 5V IC cont = 5.25A VCE(sat) < 65mV @ 1A RCE(sat) = 44m⍀ PD = 2.4W Complementary part number ZXTP19100CZ Description C Packaged in the SOT89 outline this new low saturation NPN transistor


    Original     		ZXTN19100CZ ZXTP19100CZ D-81541 ZXTN19100CZ TS16949 ZXTN19100CZTA ZXTP19100CZ PDF

    ZXTN25020DG

    Abstract: TS16949 ZXTN25020DGTA ZXTP25020DG ON950 ZXTN25
    Text: ZXTN25020DG 20V NPN high gain transistor in SOT223 Summary BVCEX > 100V BVCEO > 20V BVECX > 6V IC cont = 7A VCE(sat) < 48mV @ 1A RCE(sat) = 31mΩ PD = 3.0W Complementary part number ZXTP25020DG Description C Packaged in the SOT223 outline this new low saturation NPN transistor


    Original     		ZXTN25020DG OT223 ZXTP25020DG OT223 D-81541 ZXTN25020DG TS16949 ZXTN25020DGTA ZXTP25020DG ON950 ZXTN25 PDF

    Untitled

    Abstract: No abstract text available
    Text: ZXTN25020DG 20V NPN high gain transistor in SOT223 Summary BVCEX > 100V BVCEO > 20V BVECX > 6V IC cont = 7A VCE(sat) < 48mV @ 1A RCE(sat) = 31mΩ PD = 3.0W Complementary part number ZXTP25020DG Description C Packaged in the SOT223 outline this new low saturation NPN transistor


    Original     		ZXTN25020DG OT223 ZXTP25020DG OT223 D-81541 PDF

    Untitled

    Abstract: No abstract text available
    Text: ZXTN25020DZ 20V NPN high gain transistor in SOT89 Summary BVCEX > 100V BVCEO > 20V BVECX > 6V IC cont = 6A VCE(sat) < 48mV @ 1A RCE(sat) = 30m⍀ PD = 2.4W Complementary part number ZXTP25020DZ Description C Packaged in the SOT89 outline this new low saturation 20V NPN


    Original     		ZXTN25020DZ ZXTP25020DZ D-81541 PDF

    TS16949

    Abstract: ZXTN25100DZ ZXTN25100DZTA ZXTP25100CZ
    Text: ZXTN25100DZ 100V NPN high gain transistor in SOT89 Summary BVCEX > 180V BVCEO > 100V BVECO > 6V IC cont = 2.5A VCE(sat) < 100mV @ 1A RCE(sat) = 80m⍀ PD = 2.4W Complementary part number ZXTP25100CZ Description C Packaged in the SOT89 outline this new low saturation NPN transistor


    Original     		ZXTN25100DZ 100mV ZXTP25100CZ D-81541 TS16949 ZXTN25100DZ ZXTN25100DZTA ZXTP25100CZ PDF

    Zetex ZXTP19100CZ

    Abstract: No abstract text available
    Text: ZXTN19100CZ 100V NPN medium power transistor in SOT89 Summary BVCEX > 200V BVCEO > 100V BVECO > 5V IC cont = 5.25A VCE(sat) < 65mV @ 1A RCE(sat) = 44m⍀ PD = 2.4W Complementary part number ZXTP19100CZ Description C Packaged in the SOT89 outline this new low saturation NPN transistor


    Original     		ZXTN19100CZ ZXTP19100CZ D-81541 Zetex ZXTP19100CZ PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA1836B PCP1208 Bipolar Transistor http://onsemi.com 200V, 0.7A Low VCE sat NPN Single PCP Features • • • • High allowable power dissipation • Halogen free compliance VCEO=200V, IC=0.7A Low collector-to-emitter saturation voltage VCE(sat)=0.115V(typ.)@IC=0.35A


    Original     		ENA1836B PCP1208 450mm2Ã PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA1836B PCP1208 Bipolar Transistor http://onsemi.com 200V, 0.7A Low VCE sat NPN Single PCP Features • • • • High allowable power dissipation • Halogen free compliance VCEO=200V, IC=0.7A Low collector-to-emitter saturation voltage VCE(sat)=0.115V(typ.)@IC=0.35A


    Original     		ENA1836B PCP1208 450mm2 PDF

    DARLINGTON 3A 100V npn

    Abstract: NTE2351 nte2352 SILICON COMPLEMENTARY transistors darlington
    Text: NTE2351 NPN & NTE2352 (PNP) Silicon Complementary Transistors Darlington Power Amp, Switch Features: D High DC Current Gain: hFE (1) = 2000 Min @ VCE = 2V, IC = 1A D Low Saturation Voltage: VCE(sat) = 1.5V Max @ IC = 3A Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)


    Original     		NTE2351 NTE2352 DARLINGTON 3A 100V npn NTE2351 nte2352 SILICON COMPLEMENTARY transistors darlington PDF

    fmmt489

    Abstract: No abstract text available
    Text: Section 2: Bipolar Transistors _ Low Sc-'tusationTransistors up to S0 0 Volts SOT23 Low Saturation NPN Transistors up 1o 100V Pinout Details: 1-Collector, 2-Emitter, 3-Base V cbO V CEO VcE sat hFE lc Type Min Max at lc mA at VCE


    OCR Scan     		FMMT625 FMMT624 FMMT493A FMMTL619 FMMT451 FMMT491 FMMTL618 FMMT619 FMMT489 FMMT449 PDF

    2SD1223

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL TYPE 2SD1223 SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. POWER AMPLIFIER APPLICATIONS. Unit in mm S8MAX. FEATURES: . High DC Current Gain : hFE l =2000(Min.) (VCE=2V, Ic=lA) . Low Saturation Voltage : VcE(sat) = l->V(Max.) (Ic=3A)


    OCR Scan     		2SD1223 2SB908. O-300Q 50X50xG8nunt 2SD1223 PDF

    KTD1415

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTD1415 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH POWER SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER APPLICATIONS. FEATURES • High DC Current Gain : hFE=2000 Min. at Vce=3V, Ic=3A. • Low Saturation Voltage : VcE<sat)=1.5V(Max.) at Ic=3A.


    OCR Scan     		KTD1415 220IS KTD1415 PDF