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Catalog Datasheet	Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: NPTB00004Q Advanced Gallium Nitride 28V, 5W, DC-6 GHz HEMT Built using the SIGANTIC process - A proprietary GaN-on-Silicon technology Features •    Broadband operation from DC-6 GHz 28V Operation Industry Standard Plastic Package High Drain Efficiency >60%	Original	NPTB00004Q NPTB00004Q NDS-041	PDF

Catalog Datasheet

Type

Document Tags

PDF

Untitled

Abstract: No abstract text available
Text: NPTB00004Q Advanced Gallium Nitride 28V, 5W, DC-6 GHz HEMT Built using the SIGANTIC process - A proprietary GaN-on-Silicon technology Features •    Broadband operation from DC-6 GHz 28V Operation Industry Standard Plastic Package High Drain Efficiency >60%

Original

NPTB00004Q NPTB00004Q NDS-041

PDF