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    NRVBS540T3G Search Results

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    NRVBS540T3G Price and Stock

    onsemi NRVBS540T3G

    DIODE SCHOTTKY 40V 5A SMC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NRVBS540T3G Digi-Reel 2,093 1
    • 1 $1.22
    • 10 $0.764
    • 100 $1.22
    • 1000 $0.35498
    • 10000 $0.35498
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    NRVBS540T3G Cut Tape 2,093 1
    • 1 $1.22
    • 10 $0.764
    • 100 $1.22
    • 1000 $0.35498
    • 10000 $0.35498
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    NRVBS540T3G Reel 2,500
    • 1 -
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    • 10000 $0.31586
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    Avnet Americas NRVBS540T3G Reel 10,000 5 Weeks 2,500
    • 1 -
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    • 10000 $0.25143
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    NRVBS540T3G Reel 0 Weeks, 2 Days 1,776
    • 1 -
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    • 10000 $0.32368
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    Mouser Electronics NRVBS540T3G 39,390
    • 1 $0.6
    • 10 $0.592
    • 100 $0.441
    • 1000 $0.323
    • 10000 $0.264
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    Arrow Electronics NRVBS540T3G 12,500 1
    • 1 $0.632
    • 10 $0.6235
    • 100 $0.4645
    • 1000 $0.3403
    • 10000 $0.2781
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    Newark NRVBS540T3G Cut Tape 7,195 1
    • 1 $0.624
    • 10 $0.614
    • 100 $0.472
    • 1000 $0.355
    • 10000 $0.355
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    NRVBS540T3G Reel 2,500
    • 1 $0.364
    • 10 $0.364
    • 100 $0.364
    • 1000 $0.364
    • 10000 $0.328
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    Future Electronics NRVBS540T3G Reel 5 Weeks 2,500
    • 1 -
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    • 10000 $0.255
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    Onlinecomponents.com NRVBS540T3G
    • 1 -
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    • 10000 $0.2594
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    Bristol Electronics NRVBS540T3G 200
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    Quest Components NRVBS540T3G 1,000
    • 1 $1.5
    • 10 $1.5
    • 100 $0.75
    • 1000 $0.6
    • 10000 $0.6
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    NRVBS540T3G 30
    • 1 $0.585
    • 10 $0.4875
    • 100 $0.4875
    • 1000 $0.4875
    • 10000 $0.4875
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    TME NRVBS540T3G 916 1
    • 1 $0.802
    • 10 $0.56
    • 100 $0.445
    • 1000 $0.402
    • 10000 $0.402
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    ComSIT USA NRVBS540T3G 430
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    Avnet Asia NRVBS540T3G 5 Weeks 2,500
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    • 10000 $0.27519
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    Avnet Silica NRVBS540T3G 6 Weeks 2,500
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    EBV Elektronik NRVBS540T3G 7 Weeks 2,500
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    Flip Electronics NRVBS540T3G 15,000
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    Win Source Electronics NRVBS540T3G 23,600
    • 1 -
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    • 1000 $0.2943
    • 10000 $0.2638
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    onsemi NRVBS540T3G-IR02

    RECTIFIER DIODE, SCHOTTKY, 1 PHASE, 1 ELEMENT, 5A, 40V V(RRM), SILICON
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components NRVBS540T3G-IR02 6,104
    • 1 $1.35
    • 10 $1.35
    • 100 $1.35
    • 1000 $1.35
    • 10000 $0.4725
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    Others NRVBS540T3G

    INSTOCK
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    Chip 1 Exchange NRVBS540T3G 110,000
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    NRVBS540T3G Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NRVBS540T3G On Semiconductor NRVBS540 - DIODE RECTIFIER DIODE, Rectifier Diode Original PDF

    NRVBS540T3G Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MBRS540T3G, NRVBS540T3G Surface Mount Schottky Power Rectifier The MBRS540T3 employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal


    Original     		PDF MBRS540T3G, NRVBS540T3G MBRS540T3 MBRS540T3/D

    Untitled

    Abstract: No abstract text available
    Text: MBRS540T3G, NRVBS540T3G Surface Mount Schottky Power Rectifier The MBRS540T3 employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal


    Original     		PDF MBRS540T3G, NRVBS540T3G MBRS540T3 MBRS540T3/D

    B540A

    Abstract: NRVBS540 MBRS540T3G B540 diode B540-G MBRS540T3G marking code
    Text: MBRS540T3G, NRVBS540T3G Surface Mount Schottky Power Rectifier The MBRS540T3 employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal


    Original     		PDF MBRS540T3G, NRVBS540T3G MBRS540T3 MBRS540T3/D B540A NRVBS540 MBRS540T3G B540 diode B540-G MBRS540T3G marking code

    Untitled

    Abstract: No abstract text available
    Text: MBRS540T3G, NRVBS540T3G Surface Mount Schottky Power Rectifier The MBRS540T3 employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal


    Original     		PDF MBRS540T3G, NRVBS540T3G MBRS540T3 MBRS540T3/D