NS064N
Abstract: S29NS128N S29NS256N VDC048 S29NS256
Text: S29NSxxxN MirrorBitTM Flash Family S29NS256N, S29NS128N, NS064N 256/128/64 Megabit 16/8/4M x 16-bit , CMOS 1.8 Volt-only Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory ADVANCE INFORMATION Distinctive Characteristics Single 1.8 volt read, program and erase (1.70
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S29NSxxxN
S29NS256N,
S29NS128N,
S29NS064N
16/8/4M
16-bit)
32-Word
S29NS256/128/64N
NS064N
S29NS128N
S29NS256N
VDC048
S29NS256
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ns032j0lbjw00
Abstract: B6 3308 S29NS032J S29NS-J VDC048 VDE044 LF35 Am29N643 NS064J0LBJW00
Text: S29NS-J 128 Megabit 8 M x 16-Bit , 64 Megabit (4 M x 16-Bit), 32 Megabit (2 M x 16-Bit), and 16 Megabit (1 M x 16 Bit), 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories S29NS-J Cover Sheet Data Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion
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S29NS-J
16-Bit)
S29NS-J
ns032j0lbjw00
B6 3308
S29NS032J
VDC048
VDE044
LF35
Am29N643
NS064J0LBJW00
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Untitled
Abstract: No abstract text available
Text: S29NS-N MirrorBit Flash Family S29NS256N, S29NS128N, NS064N 256/128/64 Megabit 16/8/4M x 16-bit , CMOS 1.8 Volt-only Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory Data Sheet (Advance Information) Distinctive Characteristics Single 1.8V read, program and erase (1.70V to 1.95V)
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S29NS-N
S29NS256N,
S29NS128N,
S29NS064N
16/8/4M
16-bit)
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Untitled
Abstract: No abstract text available
Text: S29NS-P MirrorBit Flash Family S29NS512P, S29NS256P, S29NS128P 512/256/128 Mb 32/16/8 M x 16 bit , 1.8V Burst Simultaneous Read/Write, Multiplexed MirrorBit Flash Memory Data Sheet S29NS-P MirrorBit® Flash Family Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion
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S29NS-P
S29NS512P,
S29NS256P,
S29NS128P
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Untitled
Abstract: No abstract text available
Text: S71NS-N MCP Products MirrorBit 1.8 Volt-only Simultaneous Read/Write, Burst-mode Multiplexed Flash Memory 256 Mb 16 Mb x 16-bit , 128 Mb (8 Mb x 16-bit) and 64 Mb (4 Mb x 16-bit) with Multiplexed pSRAM 64 Mb (4 Mb x 16-bit), 32 Mb (2 Mb x 16-bit), 16 Mb (1 Mb x 16-bit) and 8Mb (512Kb x 16-bit)
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S71NS-N
16-bit)
512Kb
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S71VS128R
Abstract: S71VS marking bjw S71VS064R S71NS-N NS064N S29NS-N S71NS064NA0 Spansion NAND Flash S71NS064N80-RA
Text: S71NS-N MCP Products MirrorBit 1.8 Volt-only Simultaneous Read/Write, Burst-mode Multiplexed Flash Memory 256 Mb 16 Mb x 16-bit , 128 Mb (8 Mb x 16-bit) and 64 Mb (4 Mb x 16-bit) with Multiplexed pSRAM 64 Mb (4 Mb x 16-bit), 32 Mb (2 Mb x 16-bit), 16 Mb (1 Mb x 16-bit) and 8Mb (512Kb x 16-bit)
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S71NS-N
16-bit)
512Kb
S71VS128R
S71VS
marking bjw
S71VS064R
NS064N
S29NS-N
S71NS064NA0
Spansion NAND Flash
S71NS064N80-RA
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S71NS064NA0
Abstract: A-DQ15 NS064N S29NS-N S71NS-N
Text: S71NS-N MCP Products MirrorBitTM 1.8 Volt-only Simultaneous Read/Write, Burst-mode Multiplexed Flash Memory: 256 Mb 16 Mb x 16-bit , 128 Mb (8 Mb x 16-bit) and 64 Mb (4 Mb x 16-bit) with Burst-mode Multiplexed pSRAM: 64 Mb (4 Mb x 16-bit), 32 Mb (2 Mb x 16-bit)
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S71NS-N
16-bit)
S71NS064NA0
A-DQ15
NS064N
S29NS-N
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Spansion NS064N
Abstract: S71NS128P ns064n S71NS064NA0 Spansion NAND Flash DIE S29NS-N S71NS-N PSRAM* MuxpSRAM JEP95
Text: S71NS-N MCP Products MirrorBitTM 1.8 Volt-only Simultaneous Read/Write, Burst-mode Multiplexed Flash Memory 256 Mb 16 Mb x 16-bit , 128 Mb (8 Mb x 16-bit) and 64 Mb (4 Mb x 16-bit) with Multiplexed pSRAM 64 Mb (4 Mb x 16-bit), 32 Mb (2 Mb x 16-bit), 16 Mb (1 Mb x 16-bit) and 8Mb (512Kb x 16-bit)
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S71NS-N
16-bit)
512Kb
Spansion NS064N
S71NS128P
ns064n
S71NS064NA0
Spansion NAND Flash DIE
S29NS-N
PSRAM* MuxpSRAM
JEP95
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NS256N
Abstract: S29NS-N S29NS-P VDC048 VDE044 128M256 NS128N
Text: S29NS-N to S29NS-P Migration Migrating from the NS-N 110 nm to the NS-P (90 nm) Application Note Introduction Every effort was made to ensure seamless migration from the S29NS-N to the S29NS-P. Software Migration Considerations There are very few changes required in SW when migrating from the S29NS-N to S29NS-P
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S29NS-N
S29NS-P
S29NS-P.
S29NS-P
NS256N
VDC048
VDE044
128M256
NS128N
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transistor c124 esn
Abstract: transistor SA235 S71NS064NA0
Text: S71NS128NA0/NS064NA0 Based MCPs Stacked Multi-Chip Product MCP MirrorBit Flash Memory and PSRAM 128 Mb (8M x 16-bit) and 64 Mb (4M x 16-Bit), 110 nm CMOS 1.8 Volt-only, Multiplexed, Simultaneous Read/ Write, Burst Mode Flash Memory with 16 Mb (1M x 16-Bit) PSRAM
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S71NS128NA0/S71NS064NA0
16-bit)
S71NS128
064NA0
transistor c124 esn
transistor SA235
S71NS064NA0
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Untitled
Abstract: No abstract text available
Text: S71NS-N MirrorBitTM 1.8 Volt-only Simultaneous Read/Write, Burst-mode Multiplexed Flash Memory: 256 Mb 16 Mb x 16 , 128 Mb (8 Mb x 16) and pSRAM 64 Mb (4 Mb x 16) with pSRAM: 64 Mb (4 Mbx16), 32 Mb (2 Mb x 16) and 16 Mb (1 Mb x 16) ADVANCE INFORMATION Data Sheet
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S71NS-N
Mbx16)
S71NS-N
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8A0000
Abstract: No abstract text available
Text: S29NS-P MirrorBit Flash Family S29NS512P, S29NS256P, S29NS128P 512/256/128 Mb 32/16/8 M x 16 bit , 1.8V Burst Simultaneous Read/Write, Multiplexed MirrorBit Flash Memory Data Sheet S29NS-P MirrorBit® Flash Family Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion
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S29NS-P
S29NS512P,
S29NS256P,
S29NS128P
8A0000
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Am29N643
Abstract: ns064j0lb 5M-199 s29ns032 s99d
Text: S29NS128J/NS064J/S29NS032J/ S29NS016J 128 Megabit 8 M x 16-Bit , 64 Megabit (4 M x 16-Bit), 32 Megabit (2 M x 16-Bit), and 16 Megabit (1 M x 16 Bit), 110 nm CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memories Distinctive Characteristics
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S29NS128J/S29NS064J/S29NS032J/
S29NS016J
16-Bit)
S29NS016J/S29NS032J/S29NS064J/S29NS128J
Am29N643
ns064j0lb
5M-199
s29ns032
s99d
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LF35
Abstract: S29NS032J S29NS-J VDC048 VDE044 NS064J0LBJW00 Nokia c7 AMAX-16 NS032J0PBJW00 Am29N643
Text: S29NS-J 128 Megabit 8 M x 16-Bit , 64 Megabit (4 M x 16-Bit), 32 Megabit (2 M x 16-Bit), and 16 Megabit (1 M x 16 Bit), 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories Data Sheet Notice to Readers: This document states the current technical specifications
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S29NS-J
16-Bit)
S29NS-J
LF35
S29NS032J
VDC048
VDE044
NS064J0LBJW00
Nokia c7
AMAX-16
NS032J0PBJW00
Am29N643
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ADQ15
Abstract: S71NS256P S71NS128P JEP95
Text: S71NS-N MCP Products MirrorBitTM 1.8 Volt-only Simultaneous Read/Write, Burstmode Multiplexed Flash Memory 256 Mb 16 Mb x 16-bit , 128 Mb (8 Mb x 16-bit) and 64 Mb (4 Mb x 16-bit) with Burst-mode Multiplexed pSRAM 64 Mb (4 Mb x 16-bit), 32 Mb (2 Mb x 16-bit) and 16 Mb (1 Mb x 16-bit)
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S71NS-N
16-bit)
NS064N
NS128N
NS256N
ADQ15
S71NS256P
S71NS128P
JEP95
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S71NS128P
Abstract: S71NS-N NS064N S29NS-N S71NS064NA0 marking bjw S71NS064NA0-RA
Text: S71NS-N MCP Products MirrorBit 1.8 Volt-only Simultaneous Read/Write, Burst-mode Multiplexed Flash Memory 256 Mb 16 Mb x 16-bit , 128 Mb (8 Mb x 16-bit) and 64 Mb (4 Mb x 16-bit) with Multiplexed pSRAM 64 Mb (4 Mb x 16-bit), 32 Mb (2 Mb x 16-bit), 16 Mb (1 Mb x 16-bit) and 8Mb (512Kb x 16-bit)
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S71NS-N
16-bit)
512Kb
S71NS128P
NS064N
S29NS-N
S71NS064NA0
marking bjw
S71NS064NA0-RA
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bjw marking code
Abstract: S29NS128N S29NS256N S29NS-N VDC048 VDE044 spansion am29f part marking
Text: S29NS-N MirrorBit Flash Family S29NS256N, S29NS128N, NS064N 256/128/64 Megabit 16/8/4M x 16-bit , CMOS 1.8 Volt-only Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory S29NS-N MirrorBit™ Flash Family Cover Sheet Data Sheet (Advance Information)
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S29NS-N
S29NS256N,
S29NS128N,
S29NS064N
16/8/4M
16-bit)
bjw marking code
S29NS128N
S29NS256N
VDC048
VDE044
spansion am29f part marking
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S71VS256R
Abstract: S71VS128R
Text: S71NS-N MCP Products MirrorBit 1.8 Volt-only Simultaneous Read/Write, Burst-mode Multiplexed Flash Memory 256 Mb 16 Mb x 16-bit , 128 Mb (8 Mb x 16-bit) and 64 Mb (4 Mb x 16-bit) with Multiplexed pSRAM 64 Mb (4 Mb x 16-bit), 32 Mb (2 Mb x 16-bit), 16 Mb (1 Mb x 16-bit) and 8Mb (512Kb x 16-bit)
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S71NS-N
16-bit)
512Kb
S71VS256R
S71VS128R
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Untitled
Abstract: No abstract text available
Text: S29NS-P MirrorBit Flash Family S29NS512P S29NS256P S29NS128P 512/256/128 Mb 32/16/8 M x 16 bit , 1.8 V Burst Simultaneous Read/Write, Multiplexed MirrorBit Flash Memory Data Sheet S29NS-P MirrorBit® Flash Family Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion
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S29NS-P
S29NS512P
S29NS256P
S29NS128P
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S29NS128P
Abstract: S29NS256P S29NS512P S29NS-P 44BA
Text: S29NS-P MirrorBitTM Flash Family S29NS512P S29NS256P S29NS128P 512/256/128 Mb 32/16/8 M x 16 bit , 1.8 V Burst Simultaneous Read/Write, Multiplexed MirrorBit Flash Memory Data Sheet (Advance Information) S29NS-P MirrorBitTM Flash Family Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion
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S29NS-P
S29NS512P
S29NS256P
S29NS128P
S29NS128P
44BA
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S29NS128N
Abstract: S29NS256N S29NS-N VDC048 VDE044 bjw marking code
Text: S29NS-N MirrorBit Flash Family S29NS256N, S29NS128N, NS064N 256/128/64 Megabit 16/8/4M x 16-bit , CMOS 1.8 Volt-only Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory S29NS-N MirrorBit™ Flash Family Cover Sheet Data Sheet (Advance Information)
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S29NS-N
S29NS256N,
S29NS128N,
S29NS064N
16/8/4M
16-bit)
S29NS128N
S29NS256N
VDC048
VDE044
bjw marking code
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Untitled
Abstract: No abstract text available
Text: S29NSxxxN MirrorBitTM Flash Family S29NS256N, S29NS128N, NS064N 256/128/64 Megabit 16/8/4M x 16-bit , CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory ADVANCE Distinctive Characteristics Single 1.8 volt read, program and erase (1.70
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S29NSxxxN
S29NS256N,
S29NS128N,
S29NS064N
16/8/4M
16-bit)
32-Word
150ided
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Untitled
Abstract: No abstract text available
Text: S71NS-N MCP Products MirrorBitTM 1.8 Volt-only Simultaneous Read/Write, Burst-mode Multiplexed Flash Memory: 256 Mb 16 Mb x 16-bit , 128 Mb (8 Mb x 16-bit) and 64 Mb (4 Mb x 16-bit) with Burst-mode Multiplexed pSRAM: 64 Mb (4 Mb x 16-bit), 32 Mb (2 Mb x 16-bit)
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S71NS-N
16-bit)
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2n189
Abstract: 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152
Text: INTERNATIONAL TRANSISTOR SUBSTITUTION GUIDEBOOK by KEATS A. PULLEN. Jr., Eng. D. Member of the Scientific Staff, Ballistic Research Laboratories, Aberdeen Proving G rounds Adjunct Professor of Electrical Engineering, Drexel Institute of Technology Author of: Conductance Design of Active Circuits
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OCR Scan
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2G101*
2G102*
2G103*
2G109
2G220
2G221
2G222
2G223
2G224
2n189
2N1136b
2N420
B1151 EQUIVALENT
2SA114
OC59
2T312
2T203
SFT125
2N1152
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