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    NTD4808NT4G Price and Stock

    Rochester Electronics LLC NTD4808NT4G

    MOSFET N-CH 30V 10A/63A DPAK
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    DigiKey NTD4808NT4G Bulk 1,402
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    onsemi NTD4808NT4G

    MOSFET N-CH 30V 10A/63A DPAK
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    DigiKey NTD4808NT4G Reel
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    Rochester Electronics NTD4808NT4G 22,486 1
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    Aptina Imaging NTD4808NT4G

    Trans MOSFET N-CH 30V 13.8A 3-Pin(2+Tab) DPAK T/R
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    Verical NTD4808NT4G 12,486 1,716
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    NTD4808NT4G 7,500 1,716
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    NTD4808NT4G 2,500 1,716
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    Others NTD4808NT4G

    AVAILABLE EU
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    ComSIT USA NTD4808NT4G 2,500
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    NTD4808NT4G Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NTD4808NT4G On Semiconductor Power MOSFET 30 V, 63 A, N-Channel, DPAK Original PDF

    NTD4808NT4G Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    48 08NG

    Abstract: 4808ng 369D NTD4808N 08NG
    Text: NTD4808N Power MOSFET 30 V, 63 A, Single N-Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices http://onsemi.com


    Original     		PDF NTD4808N NTD4808N/D 48 08NG 4808ng 369D NTD4808N 08NG

    08NG

    Abstract: No abstract text available
    Text: NTD4808N Power MOSFET 30 V, 63 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original     		PDF NTD4808N NTD4808N/D 08NG

    4808ng

    Abstract: 08NG
    Text: NTD4808N Power MOSFET 30 V, 63 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original     		PDF NTD4808N NTD4808N/D 4808ng 08NG

    48 08NG

    Abstract: 369D NTD4808N NTD4808NT4G 08ng
    Text: NTD4808N Power MOSFET 30 V, 63 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original     		PDF NTD4808N NTD4808N/D 48 08NG 369D NTD4808N NTD4808NT4G 08ng

    NTP2955G

    Abstract: m74vhc1gt50 MBRA340T3G NTR4003NT1G NCV78L00A ncv7420 MBRB20100CTT4G BAT54CL MBRS2H100T3G MBRS340T3G
    Text: 5V ±3% 80 mA 0.8 V — 6 mA 1 mA CS8101 5V ±2% 100 mA 0.6 V 50 mA 140 mA (100 mA) CS8151 5V ±2% 100 mA 0.6 V — 750 mA (200 mA) CS8221 5V ±2% 100 mA 0.6 V — NCV317L Adj ±4% 100 mA 1.9 V (Typ) — Overvoltage Current Limit Wakeup l Overtemperature


    Original     		PDF CS8101 CS8151 CS8221 NCV317L NCV553 SC-82 SOIC-20 SGD516/D NTP2955G m74vhc1gt50 MBRA340T3G NTR4003NT1G NCV78L00A ncv7420 MBRB20100CTT4G BAT54CL MBRS2H100T3G MBRS340T3G

    Untitled

    Abstract: No abstract text available
    Text: NTD4808N, NVD4808N Power MOSFET 30 V, 63 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses NVD Prefix for Automotive and Other Applications Requiring


    Original     		PDF NTD4808N, NVD4808N NTD4808N/D

    48 08NG

    Abstract: 369D 4808ng 08NG NTD4808N
    Text: NTD4808N Power MOSFET 30 V, 63 A, Single N-Channel, DPAK/IPAK Features •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices http://onsemi.com


    Original     		PDF NTD4808N NTD4808N/D 48 08NG 369D 4808ng 08NG NTD4808N

    48 08NG

    Abstract: 369D NTD4808N NTD4808N35G TR 069
    Text: NTD4808N Power MOSFET 30 V, 63 A, Single N-Channel, DPAK/IPAK Features •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices http://onsemi.com


    Original     		PDF NTD4808N NTD4808N/D 48 08NG 369D NTD4808N NTD4808N35G TR 069

    Untitled

    Abstract: No abstract text available
    Text: NTD4808N, NVD4808N Power MOSFET 30 V, 63 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses NVD Prefix for Automotive and Other Applications Requiring


    Original     		PDF NTD4808N, NVD4808N NTD4808N/D

    NVD4808N

    Abstract: No abstract text available
    Text: NTD4808N, NVD4808N Power MOSFET 30 V, 63 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses NVD Prefix for Automotive and Other Applications Requiring


    Original     		PDF NTD4808N, NVD4808N AEC-Q101 NTD4808N/D