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NTE Electronics Inc NTE236 Rf Bjt, Npn, 25V, 6A, 27Mhz, To-220Ab; Transistor Polarity:Npn; Collector Emitter Voltage Max:25V; Transition Frequency:27Mhz; Power Dissipation:18W; Continuous Collector Current:6A; No. Of Pins:3Pins; Dc Current Gain Hfe Min:180Hfe Rohs Compliant: Yes \|Nte Electronics NTE236
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	NTE236	Bulk			1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Quest Components	NTE236		2			1 $12.402 10 $12.402 100 $12.402 1000 $12.402 10000 $12.402	Buy Now
	NTE236		1			1 $9.3 10 $7.75 100 $7.75 1000 $7.75 10000 $7.75	Buy Now
NTE Electronics Inc NTE2361 Transistor, bjt, npn,50V V(Br)Ceo,500Ma I(C),to-92Var Rohs Compliant: Yes \|Nte Electronics NTE2361
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	NTE2361	Bulk			1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Onlinecomponents.com	NTE2361		34			1 - 10 $3.82 100 $3.35 1000 $2.7 10000 $2.5	Buy Now
Bristol Electronics	NTE2361		4		2	1 - 10 $3 100 $3 1000 $3 10000 $3	Buy Now
	NTE2361		3			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	NTE2361		3			1 $4 10 $3 100 $3 1000 $3 10000 $3	Buy Now
	NTE2361		2			1 $2.38 10 $1.904 100 $1.904 1000 $1.904 10000 $1.904	Buy Now
NTE Electronics Inc NTE2362 Transistor, bjt, pnp,50V V(Br)Ceo,500Ma I(C),to-92Var Rohs Compliant: Yes \|Nte Electronics NTE2362
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	NTE2362	Bulk			1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Component Electronics, Inc	NTE2362		6			1 $0.77 10 $0.77 100 $0.58 1000 $0.5 10000 $0.5	Buy Now
NTE Electronics Inc NTE2367 Transistor, bjt, npn,50V V(Br)Ceo,100Ma I(C),to-92Var \|Nte Electronics NTE2367
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	NTE2367	Bulk			1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Onlinecomponents.com	NTE2367		3			1 $0.852 10 $0.852 100 $0.775 1000 $0.597 10000 $0.523	Buy Now
Bristol Electronics	NTE2367		2			1 - 10 - 100 - 1000 - 10000 -	Get Quote
NTE Electronics Inc NTE2363 Transistor NPN Silicon 60V IC=2A General Purpose AMP/switch Coml To NTE2364
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Onlinecomponents.com	NTE2363		24			1 $2.34 10 $2.34 100 $1.81 1000 $1.53 10000 $1.45	Buy Now
Bristol Electronics	NTE2363		5		2	1 - 10 $3 100 $3 1000 $3 10000 $3	Buy Now
Quest Components	NTE2363		314			1 $3.2625 10 $3.2625 100 $1.6313 1000 $1.5225 10000 $1.5225	Buy Now
	NTE2363		5			1 $3.2625 10 $2.175 100 $2.175 1000 $2.175 10000 $2.175	Buy Now
	NTE2363		4			1 $4 10 $3 100 $3 1000 $3 10000 $3	Buy Now

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NTE236 Datasheets (12)

Part	Manufacturer	Description	Datasheet Type	PDF
NTE236	NTE Electronics	Silicon NPN Transistor Final RF Power Output (P O = 16W, 27MHz, SSB)	Original	PDF
NTE236	NTE Electronics	Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor NPN, Si, Final RF Power Output, SSB, Pkg Style TO220	Scan	PDF
NTE2360	NTE Electronics	Silicon Complementary Transistor Digital w /2 Built-In 47k Bias Resistor	Original	PDF
NTE2361	NTE Electronics	Silicon Complementary Transistor High Speed Switch	Original	PDF
NTE2362	NTE Electronics	Silicon Complementary Transistor High Speed Switch	Original	PDF
NTE2363	NTE Electronics	Silicon Complementary Transistor High Current General Purpose Amp / Switch	Original	PDF
NTE2364	NTE Electronics	Silicon Complementary Transistor High Current General Purpose Amp / Switch	Original	PDF
NTE2365	NTE Electronics	Silicon NPN Transistor High Voltage Horizontal Deflection Output	Original	PDF
NTE2366	NTE Electronics	Silicon PNP Transistor High Voltage Video Amp (Compl to NTE399)	Original	PDF
NTE2367	NTE Electronics	Silicon Complementary Transistor Digital w /2 Built-In 4.7k Bias Resistor	Original	PDF
NTE2368	NTE Electronics	Silicon Complementary Transistor Digital w /2 Built-In 4.7k Bias Resistor	Original	PDF
NTE2369	NTE Electronics	Silicon Complementary Transistor Digital w /2 Built-In 4.7k Bias Resistor	Original	PDF

NTE236 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
nte2366 Abstract: ic 339 NTE399 Text: NTE2366 Silicon PNP Transistor High Voltage Video Amp Compl to NTE399 Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V	Original	PDF	NTE2366 NTE399) 100mA nte2366 ic 339 NTE399
27mhz rf ic Abstract: 27mhz rf amplifier NPN transistor 27mhz rf amplifier NTE236 12v class d amplifier 20W 27mhz transistor 27MHz power amplifier Text: NTE236 Silicon NPN Transistor Final RF Power Output PO = 16W, 27MHz, SSB Description: The NTE236 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on HF band mobile radio applications. Features: D High Power Gain: Gpe ≥ 12dB (VCC = 12V, PO = 16W, f = 27MHz)	Original	PDF	NTE236 27MHz, NTE236 27MHz) 27MHz 27mhz rf ic 27mhz rf amplifier NPN transistor 27mhz rf amplifier 12v class d amplifier 20W 27mhz transistor 27MHz power amplifier
Untitled Abstract: No abstract text available Text: NTE399 Silicon NPN Transistor High Voltage Video Amp Compl to NTE2366 Absolute Maximum Ratings: Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V	Original	PDF	NTE399 NTE2366)
NTE2368 Abstract: No abstract text available Text: NTE2367 NPN & NTE2368 (PNP) Silicon Complementary Transistors Digital w/2 Built–In 4.7k Bias Resistors Features: D Built–In Bias Resistor (R1 = 4.7kΩ, R2 = 4.7kΩ) D Small–Sized Package (TO92 type) Applications: D Switching Circuit D Inverter D Interface Circuit	Original	PDF	NTE2367 NTE2368 200mV, NTE2368
NTE2365 Abstract: npn 10a 800v NPN VCEO 800V transistor 800V 1A Text: NTE2365 Silicon NPN Transistor High Voltage Horizontal Deflection Output Features: D High Speed: tf = 100ns typ D High Reliability D High Breakdown Voltage: VCBO = 1500V Absolute Maximum Ratings: TA = +25°C unless otherwise specified Collector to Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V	Original	PDF	NTE2365 100ns 100mA, NTE2365 npn 10a 800v NPN VCEO 800V transistor 800V 1A
Untitled Abstract: No abstract text available Text: NTE2361 Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)60 I(C) Max. (A)500m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.200 h(FE) Max. Current gain.	Original	PDF	NTE2361 Freq300M
Untitled Abstract: No abstract text available Text: NTE2362 Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)60 I(C) Max. (A)500m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.200 h(FE) Max. Current gain.	Original	PDF	NTE2362 Freq200M
NPN Transistor TO92 40V 200mA Abstract: pnp to92 transistor pnp-npn NTE2367 NTE2368 Text: NTE2367 NPN & NTE2368 (PNP) Silicon Complementary Transistors Digital w/2 Built−In 4.7k Bias Resistors Features: D Built−In Bias Resistor (R1 = 4.7kΩ, R2 = 4.7kΩ) D Small−Sized Package (TO92 type) Applications: D Switching Circuit D Inverter D Interface Circuit	Original	PDF	NTE2367 NTE2368 200mV, NPN Transistor TO92 40V 200mA pnp to92 transistor pnp-npn NTE2367 NTE2368
ic 339 Abstract: NTE399 "NPN Transistor" ic and equivalent NTE2366 Text: NTE399 Silicon NPN Transistor High Voltage Video Amp Compl to NTE2366 Absolute Maximum Ratings: Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V	Original	PDF	NTE399 NTE2366) 100mA ic 339 NTE399 "NPN Transistor" ic and equivalent NTE2366
NTE2370 Abstract: No abstract text available Text: NTE2369 NPN & NTE2370 (PNP) Silicon Complementary Transistors Digital w/2 Built–In 4.7k Bias Resistors Features: D Built–In Bias Resistor (R1 = 4.7kΩ, R2 = 4.7kΩ) D Small–Sized Package (TO92 type) Applications: D Switching Circuit D Inverter D Interface Circuit	Original	PDF	NTE2369 NTE2370 200mV, NTE2370
Untitled Abstract: No abstract text available Text: NTE2363 NPN & NTE2364 (PNP) Silicon Complementary Transistors High Current General Purpose Amp/Switch Features: D Low Saturation Voltage D Large Current Capacity and Wide ASO Applications: D Power Supplies D Relay Drivers D Lamp Drivers D Automotive Wiring	Original	PDF	NTE2363 NTE2364
27mhz rf amplifier Abstract: 27mhz rf ic NTE236 27mhz HF SSB APPLICATIONS 27mhz rf amplifier NPN transistor HF power amplifier 12v class d amplifier 20W 27mhz transistor Text: NTE236 Silicon NPN Transistor Final RF Power Output PO = 16W, 27MHz, SSB Description: The NTE236 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on HF band mobile radio applications. Features: D High Power Gain: Gpe ≥ 12dB (VCC = 12V, PO = 16W, f = 27MHz)	Original	PDF	NTE236 27MHz, NTE236 27MHz) 27MHz 27mhz rf amplifier 27mhz rf ic 27mhz HF SSB APPLICATIONS 27mhz rf amplifier NPN transistor HF power amplifier 12v class d amplifier 20W 27mhz transistor
NTE2363 Abstract: NTE2364 Text: NTE2363 NPN & NTE2364 (PNP) Silicon Complementary Transistors High Current General Purpose Amp/Switch Features: D Low Saturation Voltage D Large Current Capacity and Wide ASO Applications: D Power Supplies D Relay Drivers D Lamp Drivers D Automotive Wiring	Original	PDF	NTE2363 NTE2364 NTE2363 NTE2364
NTE2364 Abstract: NTE2363 Text: NTE2363 NPN & NTE2364 (PNP) Silicon Complementary Transistors High Current General Purpose Amp/Switch Features: D Low Saturation Voltage D Large Current Capacity and Wide ASO Applications: D Power Supplies D Relay Drivers D Lamp Drivers D Automotive Wiring	Original	PDF	NTE2363 NTE2364 NTE2364 NTE2363

NTE2365 Abstract: NPN VCEO 800V npn 10a 800v NPN 800V Text: NTE2365 Silicon NPN Transistor High Voltage Horizontal Deflection Output TO3PBL Type Package Features: D High Speed: tf = 100ns typ D High Reliability D High Breakdown Voltage: VCBO = 1500V Absolute Maximum Ratings: TA = +25°C unless otherwise specified	Original	PDF	NTE2365 100ns 100mA, NTE2365 NPN VCEO 800V npn 10a 800v NPN 800V
NTE2365 Abstract: npn 10a 800v NPN VCEO 800V Text: NTE2365 Silicon NPN Transistor High Voltage Horizontal Deflection Output Features: D High Speed: tf = 100ns typ D High Reliability D High Breakdown Voltage: VCBO = 1500V Absolute Maximum Ratings: TA = +25°C unless otherwise specified Collector to Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V	Original	PDF	NTE2365 100ns 100mA, NTE2365 npn 10a 800v NPN VCEO 800V
NTE2359 Abstract: NTE2360 Text: NTE2359 NPN & NTE2360 (PNP) Silicon Complementary Transistors Digital w/2 Built–In 47k Bias Resistors Features: D Built–In Bias Resistor (R1 = 47kΩ, R2 = 47kΩ) D Small–Sized Package (TO92 type) Applications: D Switching Circuit D Inverter D Interface Circuit	Original	PDF	NTE2359 NTE2360 200mV, NTE2359 NTE2360
Untitled Abstract: No abstract text available Text: NTE236 Silicon NPN Transistor Final RF Power Output PO = 16W, 27MHz, SSB TO220AB Description: The NTE236 is a silicon NPN transistor in a TO220AB type package designed for 10−14 watt output power class AB amplifier applications in the HF band. Features:	Original	PDF	NTE236 27MHz, O220AB NTE236 O220AB 27MHz
Arduino Mega2560 Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l Text: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM	Original	PDF	CY8C38 CY8C29 incl795 12T9797 12T9804 12T9803 12T9800 12T9802 12T9801 12T9805 Arduino Mega2560 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
NTE199 Abstract: NTE2324 NTE262 NTE109 NTE3098 nte222 NTE290A nte184 NTE192A NTE309K Text: Semiconductor Directory Mfr.Õs Type 13 Price Mfr.Õs Code Page Mfr.Õs Type Price Mfr.Õs Code Page Mfr.Õs Type Price Mfr.Õs Code Page Mfr.Õs Type Price Mfr.Õs Code Page MPX2010GS MPX2050DP MPX2050GP MPX2100A MPX2100AP 15.08 17.27 17.69 17.74 14.57 MOT	Original	PDF	MPX2010GS MTP75N06HD NTE102A NTE2312 MPX2050DP MTP8N50E NTE103 NTE2315 MPX2050GP MTW10N100E NTE199 NTE2324 NTE262 NTE109 NTE3098 nte222 NTE290A nte184 NTE192A NTE309K
STk442-130 Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717 Text: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components	Original	PDF	100-up) STk442-130 M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
Untitled Abstract: No abstract text available Text: BI-POLAR TRANSISTORS Description and Application NTE TVpe Number Polarity and Material 2363 NPN-Si High 2364 PNP-Si High Current Gen Purp Amp/Sw Compì to NTE2363 2365 NPN-Si High Vltg, Horiz Defl Output, Sw, tf = 0.2\|is 2367 NPN-Si 2368 Case Style Diag.	OCR Scan	PDF	NTE2363) NTE2416) OT-23 NTE2419) NTE2418) NTE2364)
NTE2360 Abstract: No abstract text available Text: BI-POL AR TRANSISTORS Emitter to Base Volts Maximum Collector Power Dissipation (Watts) Typical Freq. (MHz) »T Case Style Diag. No. BVCeo BV ebo hpE Pd T0220 Isol Tab 560a •c 8 BV cbo Darlington Switch w/lntemal Damper & Zener Diode, tf = 1ns 60±10 60±10	OCR Scan	PDF	T0220 T0126 NTE2362) NTE2361) 00D3S27 NTE2360
"High Speed Switch" Abstract: TE 2383 Text: POWER MOS FIELD EFFECT TRANSISTORS Style Dlag. Numbar Drain to Sourca Breakdown Voltaga Volta BVdss V ( O t f) b Vqss •o rD8(0") Cm gfs Pd N-CHANNEL Enhancement Mode High Speed Switch N-CHANNEL Enhancement Mode High Speed Switch N-CHANNEL Enhancement Mode High	OCR Scan	PDF	TCs25 NT1300 T0220 150ns, 350ns, 110ns, "High Speed Switch" TE 2383

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NTE236 Datasheets (12)

NTE236 Datasheets Context Search

nte2366

27mhz rf ic

Untitled

NTE2368

NTE2365

Untitled

Untitled

NPN Transistor TO92 40V 200mA

ic 339

NTE2370

Untitled

27mhz rf amplifier

NTE2363

NTE2364

NTE2365

NTE2365

NTE2359

Untitled

Arduino Mega2560

NTE199

STk442-130

Untitled

NTE2360

"High Speed Switch"