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NTE Electronics Inc NTE2361 Transistor, bjt, npn,50V V(Br)Ceo,500Ma I(C),to-92Var Rohs Compliant: Yes \|Nte Electronics NTE2361
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NTE2361 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
NTE2361		NTE Electronics	Silicon Complementary Transistor High Speed Switch		Original	PDF

NTE2361 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: NTE2361 Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)60 I(C) Max. (A)500m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.200 h(FE) Max. Current gain.	Original	PDF	NTE2361 Freq300M
nte2361 Abstract: NTE2362 Text: NTE2361 NPN & NTE2362 (PNP) Silicon Complementary Transistors High Speed Switch Description: The NTE2361 (NPN) and NTE2362 (PNP) complimentary silicon transistors are designed for general–purpose amplifier and high speed switching applications. The high gain of these devices makes	Original	PDF	NTE2361 NTE2362 100mA, 100mA NTE2362) nte2361 NTE2362
STk442-130 Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717 Text: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components	Original	PDF	100-up) STk442-130 M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
NTE2360 Abstract: No abstract text available Text: BI-POL AR TRANSISTORS Emitter to Base Volts Maximum Collector Power Dissipation (Watts) Typical Freq. (MHz) »T Case Style Diag. No. BVCeo BV ebo hpE Pd T0220 Isol Tab 560a •c 8 BV cbo Darlington Switch w/lntemal Damper & Zener Diode, tf = 1ns 60±10 60±10	OCR Scan	PDF	T0220 T0126 NTE2362) NTE2361) 00D3S27 NTE2360
"High Speed Switch" Abstract: TE 2383 Text: POWER MOS FIELD EFFECT TRANSISTORS Style Dlag. Numbar Drain to Sourca Breakdown Voltaga Volta BVdss V ( O t f) b Vqss •o rD8(0") Cm gfs Pd N-CHANNEL Enhancement Mode High Speed Switch N-CHANNEL Enhancement Mode High Speed Switch N-CHANNEL Enhancement Mode High	OCR Scan	PDF	TCs25 NT1300 T0220 150ns, 350ns, 110ns, "High Speed Switch" TE 2383