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NTE Electronics Inc NTE398 Transistor Polarity:Pnp; Collector Emitter Voltage Max:150V; Continuous Collector Current:2A; Power Dissipation:25W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Transition Frequency:5Mhz; Dc Current Gain Hfe Min:60Hfe; Msl:-Rohs Compliant: Yes \|Nte Electronics NTE398
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Onlinecomponents.com	NTE398		31			1 - 10 - 100 $1.81 1000 $1.53 10000 $1.43	Buy Now
Quest Components	NTE398		24			1 $3.8925 10 $2.595 100 $1.9463 1000 $1.9463 10000 $1.9463	Buy Now

NTE398 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
NTE398		NTE Electronics	Silicon PNP Transistor TV Vertical Output (Compl to NTE375)		Original	PDF
NTE398		NTE Electronics	Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor PNP, Si, Verticle Deflection Audio Amp, Pkg Style TO220		Scan	PDF

NTE398 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
NTE398 Abstract: transistor VCE 6000V Text: NTE3081 Optoisolator NPN Transistor Output Description: The NTE3981 consists of a gallium arsenide infrared emitting diode coupled with a silicon phototransistor in a low cost plastic package with lead spacing compatible with dual–in–line packages. Absolute Maximum Ratings: TA = +25°C unless otherwise specified	Original	PDF	NTE3081 NTE3981 NTE398 transistor VCE 6000V
NTE375 Abstract: NTE398 Text: NTE398 Silicon PNP Transistor TV Vertical Output Compl to NTE375 Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V	Original	PDF	NTE398 NTE375) 400mA, NTE375 NTE398
NTE3082 Abstract: NPN Darlington transistor transistor VCE 6000V Text: NTE3082 Optoisolator NPN Darlington Transistor Output Description: The NTE3982 consists of a gallium arsenide infrared emitting diode coupled with a silicon Darlington connected transistor in a low cost plastic package with lead spacing compatible with dual–in–line packages.	Original	PDF	NTE3082 NTE3982 NTE3082 NPN Darlington transistor transistor VCE 6000V
NTE375 Abstract: NTE398 Text: NTE375 Silicon NPN Transistor TV Vertical Output Compl to NTE398 Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V	Original	PDF	NTE375 NTE398) 500mA 100mA NTE375 NTE398
NTE4017B Abstract: NTE977 IRF 707 NTE7400 NTE4001B NTE74C14 NTE5402 NTE997 P405W NTE955M Text: Semiconductor Directory ManufacturerÕs Code Log AGT ADI AMD AVX COL CRY Agilent Technologies Analog Devices Inc. Advanced Micro Devices AVX Collmer Semiconductors, Inc. Crydom Company Mfr.Õs Type Price DLS EPC FSC GIS IRF INT Mfr.Õs Code Page Dallas Semiconductor	Original	PDF	NTE397 NTE5552 NTE859 OP27FP P6KE12CA NTE5457 NTE74C14 OP271GP P6KE15A NTE5465 NTE4017B NTE977 IRF 707 NTE7400 NTE4001B NTE5402 NTE997 P405W NTE955M
STk442-130 Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717 Text: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components	Original	PDF	100-up) STk442-130 M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
123AP Abstract: NTE159 NTE123AP NTE290A 935-6072 NTE184 NTE199 NTE128 NTE293 NTE130 Text: NTE Electronics Transistors Bi-Polar Transistors Ñ Continued Stock No. Mfr.Õs Type Polarity and Material Description and Application 935-0755 935-0760 935-0840 935-0841 935-0845 935-0855 107 108 123A 123AP 124 126 NPN-Si NPN-Si NPN-Si NPN-Si NPN-Si PNP-Ge	Original	PDF	123AP NTE159) NTE396) NTE375) NTE159 NTE123AP NTE290A 935-6072 NTE184 NTE199 NTE128 NTE293 NTE130
NTE374 Abstract: NTE383 switch audio NTE398 NTE377 NTE373 NTE387 NTE38 Text: Maximum Breakdown Voltage Collector to Base Volts Collector to Emitter (Volts) Emitter to Base (Volts) Typical Forward Current Gain Maximum Collector Power Dissipation (Watts) lypical Freq. (MHZ) Case Style Diag. No. Maximum Collector Current (Amps) •c	OCR Scan	PDF	387MP 407-512MHZ) 407-512MH T0218 T0218 NTE374 NTE383 switch audio NTE398 NTE377 NTE373 NTE387 NTE38
NTE382 Abstract: t0218 NTE377 NTE373 NTE374 RF POWER AMP NTE390 25w audio NTE378 NTE398 Text: N T E ELECTRONICS INC S2E D • bMaiSS'i QQG2bDS 1SÖ B N T E TRANSISTSRSBUPOLAR I T—33—01 Maximum Breakdown Voltage NTH TVP* Number Polarity and Material Description and Application 362 NPN-Si RF Power Amp P0 = 2W, 4 0 7 -5 1 2MHZ 363 NPN-Si RF Power Amp	OCR Scan	PDF	000ab05 T-33-01 407-512MHZ) 085ns 387MP NTE387 NTE68) NTE382 t0218 NTE377 NTE373 NTE374 RF POWER AMP NTE390 25w audio NTE378 NTE398
Untitled Abstract: No abstract text available Text: _ _ N T E ELECTRONICS T n C 17E" NMOS 32K UV EPROM. ZOOnS i . 24-LEAD DIP, SEE DIAG 300 . • ¿43155*1 GOQElflb MOS, 1400-BIT SERIAL EAROM, 2.0nS . . 14-LEAD DIP, SEE DIAG 247 NTE2764 NTE2800 ‘ U u ■ 24 23 22 21 20 19 18 17 16 15 14 13 1 2 3 4 5 6 7	OCR Scan	PDF	1400-BIT 14-LEAD NTE2764 NTE2800 NTE2732A 200nS 28-LEAD 24-LEAD 40-LEAD NTE6502
t0218 Abstract: 200 watts audio amp power transistors NTE377 NTE374 NTE373 NTE374 NTE382 NTE392 45W AMP NTE373 25w audio Text: BI-POLAR TRANSISTORS Collector to Base Volts Collector to Emitter (Volts) Emitter to Base (Volts) Typical Forward Current Gain Maximum Collector Power Dissipation (Watts) typical <T Case Style Diag. No. Maximum Collector Current (Amps) BVCeo BV ebo Ufe Pd	OCR Scan	PDF	407-512MHz) O39EC NTE391) T0218 NTE390) 200 watts audio amp power transistors NTE377 NTE374 NTE373 NTE374 NTE382 NTE392 45W AMP NTE373 25w audio