Untitled
Abstract: No abstract text available
Text: NTE6408-7 Thyristors Diac Bidirectional Diode Thyristor V(BO) Min. (V)28 V(BO) Max. (V)36 I(S) Max. (A) I(TRM) Max. (A)2.0 @ t(w) (s) (Test Condition) I(TSM) Max. (A) @ t(w) (s) V(R) Max. (V)6.0 I(H) Max. (A) Holding Current V(TM) Max. (V) @I(T) (A) (Test Condition)
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NTE6408-7
StyleDO-204AA
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Untitled
Abstract: No abstract text available
Text: NTE6408 Thyristors Diac Bidirectional Diode Thyristor V(BO) Min. (V)28 V(BO) Max. (V)36 I(S) Max. (A) I(TRM) Max. (A)2.0 @ t(w) (s) (Test Condition) I(TSM) Max. (A) @ t(w) (s) V(R) Max. (V)6.0 I(H) Max. (A) Holding Current V(TM) Max. (V) @I(T) (A) (Test Condition)
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NTE6408
StyleDO-204AM
NumberTY00200003
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NTE6412
Abstract: NTE6407 NTE6408 NTE6411 DO35 VBO24
Text: NTE6407, NTE6408, NTE6411, NTE6412 Bilateral Trigger Diodes DIACS Description: The NTE6407 thru NTE6412 are bilateral trigger DIACs offering a range of voltage characteristics from 28V to 63V. These devices are triggered from a blocking–to–conduction state for either polarity
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NTE6407,
NTE6408,
NTE6411,
NTE6412
NTE6407
NTE6412
NTE6411
NTE6408
NTE6408
NTE6411
DO35
VBO24
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Untitled
Abstract: No abstract text available
Text: NTE6408-92 Thyristors Diac Bidirectional Diode Thyristor V(BO) Min. (V)28 V(BO) Max. (V)36 I(S) Max. (A) I(TRM) Max. (A)2.0 @ t(w) (s) (Test Condition) I(TSM) Max. (A) @ t(w) (s) V(R) Max. (V)6.0 I(H) Max. (A) Holding Current V(TM) Max. (V) @I(T) (A) (Test Condition)
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NTE6408-92
StyleTO-92
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NTE4017B
Abstract: NTE977 IRF 707 NTE7400 NTE4001B NTE74C14 NTE5402 NTE997 P405W NTE955M
Text: Semiconductor Directory ManufacturerÕs Code Log AGT ADI AMD AVX COL CRY Agilent Technologies Analog Devices Inc. Advanced Micro Devices AVX Collmer Semiconductors, Inc. Crydom Company Mfr.Õs Type Price DLS EPC FSC GIS IRF INT Mfr.Õs Code Page Dallas Semiconductor
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NTE397
NTE5552
NTE859
OP27FP
P6KE12CA
NTE5457
NTE74C14
OP271GP
P6KE15A
NTE5465
NTE4017B
NTE977
IRF 707
NTE7400
NTE4001B
NTE5402
NTE997
P405W
NTE955M
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STk442-130
Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
Text: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components
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100-up)
STk442-130
M56730ASP
PAC011A
PAC010A
UPC2581
PAL005A
stk413-020a
upc2581v
ecg semiconductors master replacement guide
STRS5717
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diac SBS 14
Abstract: diac 083 NTE6405 IR 944 triac varactor diode bb 205 APPLICATION for NTE 6407 low voltage scr DIAC 502 TVPA TRANSISTOR 2501 lf 113
Text: N T E ELE CT RONICS INC_ SEE J> • ~ b43125T D002b72 fibE * N T E 1 -Z S SPECIAL DEVI SILICON UNIJUNCTION TRAN SISTO R UJT Maximum Ratings NTE Type Nim ber Diagram Number Case Style RMS Emitter Current (mA) Interbase Voltage (Vote) RMS Power Dissipation
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NTE6405
Abstract: triac diac applications circuit diagram
Text: SILICON ASYMMETRICAL AC TRIGGER SAS N T E Type N u m ber C a se Style Diagram N um ber S w itc h in g V oltag es (Volts) Vs2 V S1 T098 6405 386 M in M ax M in M ax 14 18 7 9 Sw itch in g C urre n t <mA> Forw ard Voltage Drop (Volts) O ff-S ta te Current
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NTE6405
NTE6407,
NTE6408,
NTE6411,
NTE6412
triac diac applications circuit diagram
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nte 6408
Abstract: No abstract text available
Text: SPECIAL DEVICES SILICON UNILATERAL SWITCH SUS NTE Type Number 6404 Case Style T098 Diagram Number 5 Forward Switching Voltage (Volts) Forward Current foA) Holding Current {mA) Power Dissipation (mW) DC Forward Anode Cunent (mA) Peak Recurrent Forward Current
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OCR Scan
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NTE6404
NTE6407,
NTE6408,
NTE6411,
NTE6412
nte 6408
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