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    GE 4N33

    Abstract: 4N32-4N32A-4N33
    Text: G E SOLID STATE D1 DE|3fi7S0fll □□nti74 1 Optoelectronic Specification*. 4N32 -4N32A-4N33 M IN . Ga A a Infrared Em itting D iode & NPN Silicon Photo-Darlington Amplifier c High DC current transfer ratio 2 _ High isolation resistance 2 5 0 0 volts isolation voltage


    OCR Scan     		PDF nti74 -4N32A-4N33 4N29-33 GE 4N33 4N32-4N32A-4N33