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    onsemi NTMS4101PR2

    MOSFET P-CH 20V 6.9A 8SOIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NTMS4101PR2 Reel 2,500
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    • 10000 $0.36396
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    NTMS4101P Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NTMS4101P On Semiconductor Trench Power MOSFET 20 V, 9.0 A, Single P-Channel SO-8 Original PDF
    NTMS4101PR2 On Semiconductor Trench Power MOSFET 20 V, 9.0 A, Single P-Channel SO-8 Original PDF
    NTMS4101PR2 ON Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 6.9A 8-SOIC Original PDF
    NTMS4101PR2G On Semiconductor Trench Power MOSFET 20 V, 9.0 A, Single P-Channel SO-8 Original PDF

    NTMS4101P Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    NTMS4101P

    Abstract: NTMS4101PR2 NTMS4101PR2G PACKAGE DIMENSIONS SOIC-8 NB CASE 751-07 ISSUE AA
    Text: NTMS4101P Trench Power MOSFET 20 V, 9.0 A, Single P−Channel, SO−8 Features • Leading −20 V Trench for Low RDS on • Surface Mount SO−8 Package Saves Board Space • Lead−Free Package for Green Manufacturing (G Suffix) http://onsemi.com Applications


    Original
    NTMS4101P NTMS4101P/D NTMS4101P NTMS4101PR2 NTMS4101PR2G PACKAGE DIMENSIONS SOIC-8 NB CASE 751-07 ISSUE AA PDF

    P-channel power mosfet SO-8

    Abstract: MARKING CODE AA circuit diagram of mosfet buck boost SO-8 mosfet low-voltage MARKING QG 6 PIN MOSFET SO-8 PACKAGE DIMENSIONS SOIC-8 NB CASE 751-07 NTMS4101PR2
    Text: NTMS4101PR2 Product Preview Trench Power MOSFET -20 V, P-Channel, SO-8 Single This P-Channel device was designed using ON Semiconductor’s leading trench technology for low RDS on performance in the SO-8 package for high power and current handling capability. The low


    Original
    NTMS4101PR2 NTMS4101PR2/D P-channel power mosfet SO-8 MARKING CODE AA circuit diagram of mosfet buck boost SO-8 mosfet low-voltage MARKING QG 6 PIN MOSFET SO-8 PACKAGE DIMENSIONS SOIC-8 NB CASE 751-07 NTMS4101PR2 PDF

    PACKAGE DIMENSIONS SOIC-8 NB CASE 751-07 ISSUE AA

    Abstract: No abstract text available
    Text: NTMS4101P Advance Information Trench Power MOSFET 20 V, 9.0 A, Single P−Channel, SO−8 Features • Leading −20 V Trench for Low RDS on • Surface Mount SO−8 Package Saves Board Space • Lead−Free Package for Green Manufacturing (G Suffix) http://onsemi.com


    Original
    NTMS4101P NTMS4101P/D PACKAGE DIMENSIONS SOIC-8 NB CASE 751-07 ISSUE AA PDF

    P-channel power mosfet SO-8

    Abstract: "P-Channel MOSFET" dd 127 dd 127 d MARKING CODE SO-8 "battery protection" DD 127 D transistor MARKING QG 6 PIN MOSFET SO-8 PACKAGE DIMENSIONS SOIC-8 NB CASE 751-07 NTMS4101P
    Text: NTMS4101P Trench Power MOSFET 20 V, 9.0 A, Single P−Channel, SO−8 Features • Leading −20 V Trench for Low RDS on • Surface Mount SO−8 Package Saves Board Space • Lead−Free Package for Green Manufacturing (G Suffix) http://onsemi.com Applications


    Original
    NTMS4101P -30aws NTMS4101P/D P-channel power mosfet SO-8 "P-Channel MOSFET" dd 127 dd 127 d MARKING CODE SO-8 "battery protection" DD 127 D transistor MARKING QG 6 PIN MOSFET SO-8 PACKAGE DIMENSIONS SOIC-8 NB CASE 751-07 NTMS4101P PDF

    CS5170

    Abstract: MUR1620CTA NTP3055 SBRS81100T3G MC1741CP 2N5458 SUBSTITUTE SPEED CONTROL of DC MOTOR tda1085c DIODE SWCH 100V SS SOT23 TR znr SF 471 NCP1200AP60
    Text: SGD501/D REV 17, April 10, 2004 NORTH AMERICA SALES AND DISTRIBUTION ON Semiconductor PRICE BOOK THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION − Please see General Information Section EFFECTIVE DATE: APRIL 10, 2004  General Information Elimination Of Ozone Depleting Chemicals . . . .


    Original
    SGD501/D 74VCX16373DT 74VCX16373DTR 74VCX16374DT 16BIT 74VCX16374DTR 80SQ045N 80SQ045NRL CS5170 MUR1620CTA NTP3055 SBRS81100T3G MC1741CP 2N5458 SUBSTITUTE SPEED CONTROL of DC MOTOR tda1085c DIODE SWCH 100V SS SOT23 TR znr SF 471 NCP1200AP60 PDF