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    onsemi NUS3116MTR2G

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    Rochester Electronics NUS3116MTR2G 62,795 1
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    Rochester Electronics LLC NUS3116MTR2G

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    NUS3116MTR2G Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NUS3116MTR2G On Semiconductor Main Switch Power MOSFET -12 V, -6.2 A, uCool Single P-Channel with Dual PNP Low Vce(sat) Transistors Original PDF

    NUS3116MTR2G Datasheets Context Search

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    NUS3116MT

    Abstract: No abstract text available
    Text: NUS3116MT Main Switch Power MOSFET and Dual Charging BJT -12 V, -6.2 A, mCoolE Single P-Channel with Dual PNP low Vce sat Transistors, 3x3Ămm WDFN Package This device integrates one high performance power MOSFET and two low Vce(sat) transistors, greatly reducing the layout space and


    Original     		PDF NUS3116MT NUS3116MT/D NUS3116MT

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    Abstract: NUS3116MT NUS3116MTR2G OF BJT 547
    Text: NUS3116MT Main Switch Power MOSFET and Dual Charging BJT -12 V, -6.2 A, mCoolE Single P-Channel with Dual PNP low Vce sat Transistors, 3x3Ămm WDFN Package This device integrates one high performance power MOSFET and two low Vce(sat) transistors, greatly reducing the layout space and


    Original     		PDF NUS3116MT NUS3116MT/D AYWW marking code IC NUS3116MT NUS3116MTR2G OF BJT 547