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NX5501 Abstract: NX5304 NX5306 NX5307 NX5504 NX6306 NX6307 NX6508 STM-16 Text: PRELIMINARY DATA SHEET LASER DIODE NX6508 Series 1 470 TO 1 610 nm FOR 2.5 Gb/s, CWDM InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6508 Series is a 1 470 to 1 610 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PINPD. These devices are ideal for 2.5 Gb/s CWDM application.	Original	PDF	NX6508 NX5501 NX5304 NX5306 NX5307 NX5504 NX6306 NX6307 STM-16
nec d 588 Abstract: NEC DIODE LASER PS2001 Text: DATA SHEET LASER DIODE NX6508 Series 1 470 TO 1 610 nm FOR 2.5 Gb/s, CWDM InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6508 Series is a 1 470 to 1 610 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PINPD. These devices are ideal for 2.5 Gb/s CWDM application.	Original	PDF	NX6508 nec d 588 NEC DIODE LASER PS2001
NX5501 Abstract: NX5304 NX5306 NX5307 NX5504 NX6306 NX6307 NX6508 STM-16 nec. 5.5 473 Text: PRELIMINARY DATA SHEET LASER DIODE NX6508 Series 1 470 TO 1 610 nm FOR 2.5 Gb/s, CWDM InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6508 Series are 1 470 to 1 610 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PINPD. These devices are ideal for 2.5 Gb/s CWDM application.	Original	PDF	NX6508 NX5501 NX5304 NX5306 NX5307 NX5504 NX6306 NX6307 STM-16 nec. 5.5 473
nec. 5.5 473 Abstract: No abstract text available Text: PRELIMINARY DATA SHEET LASER DIODE NX6508 Series 1 470 TO 1 610 nm FOR 2.5 Gb/s, CWDM InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6508 Series is a 1 470 to 1 610 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PINPD. These devices are ideal for 2.5 Gb/s CWDM application.	Original	PDF	NX6508 nec. 5.5 473
nec d 588 Abstract: NX6508 Text: PRELIMINARY DATA SHEET NEC's InGaAsP MQW-DFB LASER DIODE IN CAN PACKAGE FOR 2.5 Gb/s, CWDM APPLICATIONS NX6508 Series FEATURES • OPTICAL OUTPUT POWER PO = 5.0 mW • PEAK EMISSION WAVELENGTH λp = 1 470 to 1 610 nm Based on ITU-T recommendations • LOW THRESHOLD CURRENT	Original	PDF	NX6508 NX6508 NX6508GKxx nec d 588
532 nm laser diode Abstract: NX6508 NX6508-AZ Text: PRELIMINARY DATA SHEET NEC's InGaAsP MQW-DFB LASER DIODE IN CAN PACKAGE FOR 2.5 Gb/s, CWDM APPLICATIONS NX6508 Series FEATURES • OPTICAL OUTPUT POWER PO = 5.0 mW • PEAK EMISSION WAVELENGTH λp = 1 470 to 1 610 nm Based on ITU-T recommendations • LOW THRESHOLD CURRENT	Original	PDF	NX6508 NX6508 532 nm laser diode NX6508-AZ
Untitled Abstract: No abstract text available Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original	PDF