CGY1047
Abstract: CGD1042 CGD1044 CGD104xH CGD1042H CGD1044H CGY1041 CGY1043
Text: NXP high-gain power doublers CGD104x Upgrade to sustainable 1 GHz CATV networks NXP offers a choice of standard and high-output power doublers for 1 GHz CATV applications. These high performance GaAs devices make it easy for cable operators to extend their services
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CGD104x
CGD104xH)
bra822
CGD1042
CGD1044
CGY1047
CGD104xH
CGD1042H
CGD1044H
CGY1041
CGY1043
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QUBiC4X
Abstract: BGU7003 BFU725F
Text: NXP wideband LNA MMIC BGU7003 in SiGe:C process High-quality reception at high RF frequencies Manufactured in NXP’s latest SiGe:C process, this high-frequency RF MMIC delivers high-quality reception with extended battery life. It is a cost-effective, siliconbased alternative to GaAs devices,
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BGU7003
110-GHz
OT891
QUBiC4X
BFU725F
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TFF1007
Abstract: SOT616 TFF1007HN tff1003hn IESS-308 TFF11077HN VCO 24 GHz TFF1006HN QUBiC4X
Text: NXP LO generators TFF11xxxHN, TFF1003HN, TFF1006HN & TFF1007HN Ultra-low-noise LO generators for microwave radios Manufactured in NXP’s breakthrough QUBiC4X SiGe:C process technology, these highly integrated, alignment-free LO generators are low power consumption and low-spurious solutions that simplify
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TFF11xxxHN,
TFF1003HN,
TFF1006HN
TFF1007HN
FF11xxxHN
FF1003HN:
FF1006HN:
FF1007HN:
IESS-308F1007HN
OT616
TFF1007
SOT616
TFF1007HN
tff1003hn
IESS-308
TFF11077HN
VCO 24 GHz
TFF1006HN
QUBiC4X
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ku-band lnb
Abstract: SOT363F Multiple output LNB lnb ku BFU725F LNA ku-band QUBiC4X smd transistor sot363 ku-band lnb satellite BGA28xx
Text: NXP satellite LNB devices BFU725F and BGA28xx Complete satellite portfolio for all LNB architectures Designed for use in LNAs, mixers, and IF amplifiers, these robust, small-footprint products are manufactured in NXP’s groundbreaking QUBiC4X SiGe:C and QUBiC4+ process technology and
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BFU725F
BGA28xx
BGA2866
OT363
ku-band lnb
SOT363F
Multiple output LNB
lnb ku
LNA ku-band
QUBiC4X
smd transistor sot363
ku-band lnb satellite
BGA28xx
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Untitled
Abstract: No abstract text available
Text: NXP LO generators TFF11xxxHN, TFF1003HN & TFF1007HN Low-noise LO generators for microwave radios Manufactured in NXP’s breakthrough QUBiC4X SiGe:C process technology, these highly integrated, alignment-free LO generators are low-power, low-spurious solutions that simplify design-in and
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TFF11xxxHN,
TFF1003HN
TFF1007HN
TFF11xxxHN
TFF1003HN:
TFF1007HN:
IESS-308
OT616
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nxp Cross-reference
Abstract: BGS67A BGD814 IN 2155 BGD714 catv data book MHW10276N BGD812 BGY888 CGD1042H
Text: NXP CATV cross-reference As the number-one supplier of CATV hybrid products, NXP Semiconductors provides the broadest range of choices for all network bandwidths. We support 500, 600, 750, and 870 MHz in analog or digital applications. For 1-GHz applications, our
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CGD1042H
CGD1044H
MHW10188AN
MHW10247AN
MHW818BGY66B
BGS67A
BGY68
MHW1304LAN
BGY67A
MHW1244N
nxp Cross-reference
BGS67A
BGD814
IN 2155
BGD714
catv data book
MHW10276N
BGD812
BGY888
CGD1042H
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nxp Cross-reference
Abstract: CGD1044 BGS67A catv MHW10276N BGY1085A CGD1042 CGD1042H CGY888 MHW10186N
Text: NXP CATV cross-reference As the number-one supplier of CATV hybrid products, NXP Semiconductors provides the broadest range of choices for all network bandwidths. We support 500, 600, 750, and 870 MHz in analog or digital applications. For 1-GHz applications, our
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CGD1042
CGD1042H
CGD1044
CGD1044H
MHW10188AN
BGD812
BGD814
BGBGY66B
BGS67A
BGY68
nxp Cross-reference
CGD1044
BGS67A
catv
MHW10276N
BGY1085A
CGD1042
CGD1042H
CGY888
MHW10186N
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BGA7130
Abstract: BGA7133 qubic4 BGA7124 bra850 BGA7024
Text: NXP Medium-Power MMICs BGA7xxx for broadband applications Broadband QUBiC4 MMICs for all 400-2700 MHz applications Produced in NXP’s proven QUBiC4 Si BiCMOS process, these MMICs bring improved thermal performance and added-value features to all 400-2700 MHz applications − at
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OT-89
OT908
BGA7130
BGA7133
qubic4
BGA7124
bra850
BGA7024
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PDF
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Untitled
Abstract: No abstract text available
Text: NXP GPS LNAs BGU7003 and BGU7005 Get the fastest TTFF* with GPS LNAs that use proven QUBiC4X SiGe:C Manufactured in NXP’s breakthrough QUBiC4X SiGe:C process technology and available in the industry’s smallest package, these highly integrated GPS LNAs reduce cost while delivering
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BGU7003
BGU7005
BGU7003
OT891
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Untitled
Abstract: No abstract text available
Text: NXP medium-power MMICs BGA7xxx for broadband applications Broadband QUBiC4 MMICs for all 400-2700 MHz applications Produced in NXP’s proven QUBiC4 Si BiCMOS process, these MMICs bring improved thermal performance and added-value features to all 400-2700 MHz applications − at
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BGA7130
BGA7133
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QUBiC4X
Abstract: qubic4 BGU7005 jammer gsm SOT891 BGU7003 GPS and GSM Antenna GPS antenna design NXP brb201
Text: NXP GPS LNAs BGU7003 and BGU7005 Get the fastest TTFF* with GPS LNAs that use proven QUBiC4X SiGe:C Manufactured in NXP’s breakthrough QUBiC4X SiGe:C process technology and available in the industry’s smallest package, these highly integrated GPS LNAs reduce cost while delivering
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BGU7003
BGU7005
BGU7003
OT891
QUBiC4X
qubic4
BGU7005
jammer gsm
SOT891
GPS and GSM Antenna
GPS antenna design NXP
brb201
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BGO807C
Abstract: BGE788C BGY787 CATV DISTRIBUTION NETWORK BGD812 BGD712C BGY588C BGY785A CGD942C CGD944C
Text: NXP CATV C-family for the Chinese SARFT standard Connecting people, protecting your network Specially designed for the Chinese Hybrid Fiber Coax HFC infrastructure, NXP CATV C-family offers you a total solution for cable TV networks. It is both flexible enough for connecting rural
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BGY588C,
BGE788C
CGY888C
BGD712C,
CGD944C
CGD942C
BGO807C
BGY787
CATV DISTRIBUTION NETWORK
BGD812
BGD712C
BGY588C
BGY785A
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very simple walkie talkie circuit diagram
Abstract: blf278 models walkie talkie circuit diagram simple walkie talkie circuit diagram SiGe HBT GAIN BLOCK MMIC AMPLIFIER N6 BF245c spice model smd TRANSISTOR code marking 8K MOBILE jammer GSM 1800 MHZ BSS83 spice model smd TRANSISTOR code marking 7k sot23
Text: Experience high-performance analog NXP’s RF Manual makes design work much easier NXP’s RF Manual – one of the most important reference tools on the market for today’s RF designers – features our complete range of RF products, from low to high power.
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TFF1007HN
TFF11070HN
TFF11073HN
TFF11077HN
TFF11080HN
TFF11084HN
TFF11088HN
TFF11092HN
TFF11096HN
TFF11101HN
very simple walkie talkie circuit diagram
blf278 models
walkie talkie circuit diagram
simple walkie talkie circuit diagram
SiGe HBT GAIN BLOCK MMIC AMPLIFIER N6
BF245c spice model
smd TRANSISTOR code marking 8K
MOBILE jammer GSM 1800 MHZ
BSS83 spice model
smd TRANSISTOR code marking 7k sot23
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double TRANSISTOR SMD MARKING CODE mc
Abstract: walkie talkie circuit diagram very simple walkie talkie circuit diagram smd TRANSISTOR code marking 8K smd m5 transistor 6-pin walkie talkie Transceiver IC mesfet lnb toshiba smd marking code transistor blf574 BLF578
Text: Experience high-performance analog NXP’s RF Manual makes design work much easier NXP’s RF Manual – one of the most important reference tools on the market for today’s RF designers – features our complete range of RF products, from low to high power.
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TFF1007HN
TFF11070HN
TFF11073HN
TFF11077HN
TFF11080HN
TFF11084HN
TFF11088HN
TFF11092HN
TFF11096HN
TFF11101HN
double TRANSISTOR SMD MARKING CODE mc
walkie talkie circuit diagram
very simple walkie talkie circuit diagram
smd TRANSISTOR code marking 8K
smd m5 transistor 6-pin
walkie talkie Transceiver IC
mesfet lnb
toshiba smd marking code transistor
blf574
BLF578
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BFU725F
Abstract: BGU7003 SOT-891
Text: NXP의 SiGe:C 공정이 BGU7003 낳은 광대역 LNA MMIC BGU7003 RF 고주파수 대역에서 뛰어난 수신감도 NXP의 최신 SiGe:C 공정으로 생산된 이 고주파 RF MMIC는 수신감도가 매우 우수하고 배터 리의 수명이 향상된 제품입니다. GaAs를 대체하는 실리콘 기반의 기기로서 비용 효율이 크고,
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BGU7003
110-GHz
OT891
BGU7003
BFU725F
BFU725F
SOT-891
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6 pin TRANSISTOR SMD CODE CAA
Abstract: TEA6721 BF991 spice model
Text: RF マニュアル第 16 版 ハイパフォーマンスRF製品用のアプリケーション および設計マニュアル 2012年6月 NXPで次世代RFおよびマイクロ波設計のパフォ ーマンスがさらに向上 NXPの RF マニュアルは、
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CGY888C
Abstract: CGD944C BGY835C BGY888 CGD942C
Text: NXP GaAs HFC CATV solutions CGY888C, CGD942C and CGD944C Complete GaAs amplifier solutions for Chinese HFC networks These high-performance GaAs solutions, specially designed for the Chinese SARFT HFC standard, provide complete functionality in a format that reduces chip-count and lowers overall cost.
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CGY888C,
CGD942C
CGD944C
870-MHz
CGY888C
CGD942C
23-dB
25-dB
CGY888C
CGD944C
BGY835C
BGY888
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sot-89 BV SMD TRANSISTOR MARKING CODE
Abstract: bgu7051 MS1051 2SK163 BLF578 fm band BLF278 mosfet HF applications BFU610F TAN250A PTFA 210301E - 30 W 100MHz SMD RF Mixer
Text: RFマニュアル第14版 RF製品用のアプリケーションお よび設計マニュアル2010年5月 NXPセミコンダクターズRFマニュアル第14版 3 最も要求の高いアプリケーションに向けたハイパフォーマンスRF NXPのRFマニュアルでRF設計がこれ
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NXPRF14
JESD204A
AEC100
RFBFR90
RFBFQ33
TFF1004HN
FMF11070HN
sot-89 BV SMD TRANSISTOR MARKING CODE
bgu7051
MS1051
2SK163
BLF578 fm band
BLF278 mosfet HF applications
BFU610F
TAN250A
PTFA 210301E - 30 W
100MHz SMD RF Mixer
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cgd1044hi
Abstract: CGD1042H CGD1044H CGY1041 CGY1043 CGY1047 CGD1047Hi
Text: NXP high-gain power doublers CGD104x and push-pulls CGY104x Highly efficient line-up of 1 GHz GaAs modules for sustainable CATV networks Designed for 1-GHz “sustainable networks,” these high-performance GaAs devices enable extended bandwidth and higher data rates. They deliver increased network capacity and make
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CGD104x
CGY104x
CGD1042Hi
CGD1044Hi
cgd1044hi
CGD1042H
CGD1044H
CGY1041
CGY1043
CGY1047
CGD1047Hi
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CGY887B
Abstract: DIN45004B
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D252 CGY887B 860 MHz, 27.8 dB gain push-pull amplifier Product specification 2001 Nov 27 NXP Semiconductors Product specification 860 MHz, 27.8 dB gain push-pull amplifier FEATURES CGY887B PINNING - SOT115J • Excellent linearity
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M3D252
CGY887B
OT115J
613518/01/pp8
CGY887B
DIN45004B
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CGY887A
Abstract: DIN45004B NXP GaAs
Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D252 CGY887A 860 MHz, 25.5 dB gain push-pull amplifier Product specification Supersedes data of 2001 Oct 25 2002 Apr 18 NXP Semiconductors Product specification 860 MHz, 25.5 dB gain push-pull amplifier
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M3D252
CGY887A
OT115J
613518/05/pp8
CGY887A
DIN45004B
NXP GaAs
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DIN45004
Abstract: CGD914 CGD914MI DIN45004B NXP GaAs MCD990
Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D252 CGD914; CGD914MI 860 MHz, 20 dB gain power doubler amplifier Product specification Supersedes data of 2000 Jul 25 2001 Nov 01 NXP Semiconductors Product specification 860 MHz, 20 dB gain power doubler
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M3D252
CGD914;
CGD914MI
OT115J
CGD914
613518/06/pp14
DIN45004
CGD914
CGD914MI
DIN45004B
NXP GaAs
MCD990
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CGD923
Abstract: MGU820
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D848 CGD923 870 MHz, 20 dB gain power doubler amplifier Product specification 2002 Oct 08 NXP Semiconductors Product specification 870 MHz, 20 dB gain power doubler amplifier FEATURES CGD923 PINNING - SOT115AE • High output capability
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M3D848
CGD923
OT115AE
613518/01/pp8
CGD923
MGU820
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BFU725F
Abstract: germanium transistors NPN SOT343F
Text: SiGeC microwave NPN transistor BFU725F A perfect match up to 20 GHz Meet the trend towards higher frequencies. With NXP Semiconductors’ latest SiGeC microwave NPN transistor BFU725F, you get high switching frequencies plus extremely high gain and low noise.
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BFU725F
BFU725F,
OT343F
BFU725F
germanium transistors NPN
SOT343F
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