BGT24MTR11
Abstract: AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586
Text: Selection Guide RF & Protection Devices www.infineon.com/rfandprotectiondevices 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 9 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters
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24GHz
BF517
BF770A
BF771
BF799
BF799W
BFP181
BFP182
BFP182R
BFP182W
BGT24MTR11
AZ1045-04F
BAR86-02LRH
24GHz Radar
BGA628L7
SMV1705
BFR181W
ALPHA&OMEGA DATE CODE
marking code onsemi Diode
2SC4586
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smd code marking ft sot23
Abstract: marking code my SMD Transistor npn marking code SG transistors SMD MARKING CODE sg smd code marking sot23 nxp MARKING SG marking code NA sot23 MARKING CODE SMD IC MARKING sg SOT23 MARKING SOT23 .DG
Text: 2PD602AQL; 2PD602ARL; 2PD602ASL 50 V, 500 mA NPN general-purpose transistors Rev. 01 — 27 October 2008 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistors in a small SOT23 TO-236AB Surface-Mounted Device (SMD) plastic package.
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2PD602AQL;
2PD602ARL;
2PD602ASL
O-236AB)
2PD602AQL
O-236AB
2PD602ARL
2PB710ARL
2PB710ASL
smd code marking ft sot23
marking code my SMD Transistor npn
marking code SG transistors
SMD MARKING CODE sg
smd code marking sot23
nxp MARKING SG
marking code NA sot23
MARKING CODE SMD IC
MARKING sg SOT23
MARKING SOT23 .DG
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NXP SD SMD ZENER DIODE MARKING CODE
Abstract: Zener diode smd marking U4 NXP SMD ZENER DIODE MARKING CODE diode zener smd sg 64 diode sy 170/10 smd diode marking sG zener diode SMD marking code tf BZX84J-C6V8 BZX84J-B24 Zener diode smd marking code C24
Text: BZX84J series Single Zener diodes Rev. 01 — 1 March 2007 Product data sheet 1. Product profile 1.1 General description General-purpose Zener diodes in a SOD323F SC-90 very small and flat lead Surface-Mounted Device (SMD) plastic package. 1.2 Features • Non-repetitive peak reverse power
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BZX84J
OD323F
SC-90)
NXP SD SMD ZENER DIODE MARKING CODE
Zener diode smd marking U4
NXP SMD ZENER DIODE MARKING CODE
diode zener smd sg 64
diode sy 170/10
smd diode marking sG
zener diode SMD marking code tf
BZX84J-C6V8
BZX84J-B24
Zener diode smd marking code C24
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NXP SD SMD ZENER DIODE MARKING CODE
Abstract: C5V1 Zener diode smd marking U4 zener diode SMD marking code tf SMD diode sg 46 diode zener smd sg 64 marking code D3 SC-88 NXP SMD ZENER DIODE MARKING CODE marking code sc smd diode marking code u9
Text: SO D3 23F BZX84J series Single Zener diodes Rev. 2 — 1 August 2011 Product data sheet 1. Product profile 1.1 General description General-purpose Zener diodes in a SOD323F SC-90 very small and flat lead Surface-Mounted Device (SMD) plastic package. 1.2 Features and benefits
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BZX84J
OD323F
SC-90)
AEC-Q101
NXP SD SMD ZENER DIODE MARKING CODE
C5V1
Zener diode smd marking U4
zener diode SMD marking code tf
SMD diode sg 46
diode zener smd sg 64
marking code D3 SC-88
NXP SMD ZENER DIODE MARKING CODE
marking code sc
smd diode marking code u9
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XM0830SJ
Abstract: smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563
Text: Selection Guide RF & Protection Devices [ www.infineon.com/rfandprotectiondevices ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters
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24GHz
BF517
BF770A
BF771
BF775
BF799
BF799W
BFP181
BFP181R
BFP182
XM0830SJ
smd code marking 162 sot23-5
MARKING V14 SOT23-5
RF Transistor Selection
smd code marking rf ft sot23
smd code marking NEC rf transistor
sot-363 inf
smd marking D3 SOT363
XM0860SH
MGA51563
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BF1202WR
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BF1202; BF1202R; BF1202WR N-channel dual-gate PoLo MOS-FETs Product specification Supersedes data of 2000 Mar 29 2010 Sep 16 NXP Semiconductors Product specification N-channel dual-gate PoLo MOS-FETs FEATURES BF1202; BF1202R; BF1202WR
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BF1202;
BF1202R;
BF1202WR
MSB035
BF1202R
R77/03/pp15
BF1202WR
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"MARKING CODE LE"
Abstract: BF1202WR BF1202 BF1202R dual-gate
Text: DISCRETE SEMICONDUCTORS DATA SHEET BF1202; BF1202R; BF1202WR N-channel dual-gate PoLo MOS-FETs Product specification Supersedes data of 2000 Mar 29 2010 Sep 16 NXP Semiconductors Product specification N-channel dual-gate PoLo MOS-FETs FEATURES BF1202; BF1202R; BF1202WR
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BF1202;
BF1202R;
BF1202WR
MSB035
BF1202R
R77/03/pp15
"MARKING CODE LE"
BF1202WR
BF1202
dual-gate
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MOSFET 7121
Abstract: 9935 mosfet
Text: BF1217WR N-channel dual gate MOSFET Rev. 1 — 3 August 2010 Product data sheet 1. Product profile 1.1 General description Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive
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BF1217WR
BF1217WR
OT343R
MOSFET 7121
9935 mosfet
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Untitled
Abstract: No abstract text available
Text: BF1216 Dual N-channel dual gate MOSFET Rev. 01 — 29 April 2010 Product data sheet 1. Product profile 1.1 General description The BF1216 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads. The source and substrate are interconnected. Internal bias circuits enable DC stabilization
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BF1216
BF1216
OT363
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bf1216
Abstract: Dual Gate MOSFET graphs dual gate mosfet in vhf amplifier SC-88 M5t transistor M5W
Text: BF1216 Dual N-channel dual gate MOSFET Rev. 01 — 29 April 2010 Product data sheet 1. Product profile 1.1 General description The BF1216 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads. The source and substrate are interconnected. Internal bias circuits enable DC stabilization
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BF1216
BF1216
OT363
Dual Gate MOSFET graphs
dual gate mosfet in vhf amplifier
SC-88 M5t
transistor M5W
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Untitled
Abstract: No abstract text available
Text: BF1217WR N-channel dual gate MOSFET Rev. 2 — 20 June 2011 Product data sheet 1. Product profile 1.1 General description Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive
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BF1217WR
BF1217WR
OT343R
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BF1217WR
Abstract: mosfet cross reference
Text: BF1217WR N-channel dual gate MOSFET Rev. 2 — 20 June 2011 Product data sheet 1. Product profile 1.1 General description Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive
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BF1217WR
BF1217WR
OT343R
mosfet cross reference
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br 8764
Abstract: marking 822 sot363 6710 mosfet sp 9753 BF1214 sc 6700 N-CHANNEL dual gate ultra low noise vhf AMPLIFIER
Text: BF1214 Dual N-channel dual gate MOSFET Rev. 01 — 30 October 2007 Product data sheet 1. Product profile 1.1 General description The BF1214 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads. The source and substrate are interconnected. Internal bias circuits enable
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BF1214
BF1214
OT363
br 8764
marking 822 sot363
6710 mosfet
sp 9753
sc 6700
N-CHANNEL dual gate ultra low noise vhf AMPLIFIER
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BF1101WR
Abstract: "MARKING CODE NC" MGS303 BF1101 BF1101R MGS302 dual-gate
Text: DISCRETE SEMICONDUCTORS DATA SHEET BF1101; BF1101R; BF1101WR N-channel dual-gate MOS-FETs Product specification Supersedes data of 1999 Feb 01 1999 May 14 NXP Semiconductors Product specification BF1101; BF1101R; BF1101WR N-channel dual-gate MOS-FETs FEATURES
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BF1101;
BF1101R;
BF1101WR
MSB035
BF1101R
R77/02/pp15
BF1101WR
"MARKING CODE NC"
MGS303
BF1101
MGS302
dual-gate
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br 8764
Abstract: 13-AMPLIFIER BF1210
Text: BF1210 Dual N-channel dual gate MOSFET Rev. 01 — 25 October 2006 Product data sheet 1. Product profile 1.1 General description The BF1210 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads. The source and substrate are interconnected. Internal bias circuits enable
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BF1210
BF1210
OT363
br 8764
13-AMPLIFIER
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BF1211; BF1211R; BF1211WR N-channel dual-gate MOS-FETs Product specification 2003 Dec 16 NXP Semiconductors Product specification BF1211; BF1211R; BF1211WR N-channel dual-gate MOS-FETs FEATURES PINNING • Short channel transistor with high forward transfer
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BF1211;
BF1211R;
BF1211WR
R77/01/pp16
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BF1201WR
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BF1201; BF1201R; BF1201WR N-channel dual-gate PoLo MOS-FETs Product specification Supersedes data of 1999 Dec 01 2000 Mar 29 NXP Semiconductors Product specification BF1201; BF1201R; BF1201WR N-channel dual-gate PoLo MOS-FETs FEATURES
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BF1201;
BF1201R;
BF1201WR
MSB035
BF1201R
R77/02/pp15
BF1201WR
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BF1201
Abstract: BF1201R BF1201WR 7555 ID c2328 dual-gate
Text: DISCRETE SEMICONDUCTORS DATA SHEET BF1201; BF1201R; BF1201WR N-channel dual-gate PoLo MOS-FETs Product specification Supersedes data of 1999 Dec 01 2000 Mar 29 NXP Semiconductors Product specification BF1201; BF1201R; BF1201WR N-channel dual-gate PoLo MOS-FETs
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BF1201;
BF1201R;
BF1201WR
MSB035
BF1201R
R77/02/pp15
BF1201
BF1201WR
7555 ID
c2328
dual-gate
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Untitled
Abstract: No abstract text available
Text: BF1207 Dual N-channel dual gate MOSFET Rev. 2 — 7 September 2011 Product data sheet 1. Product profile 1.1 General description The BF1207 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads and an integrated switch. The source and substrate are interconnected. Internal bias circuits enable Direct Current
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BF1207
BF1207
OT363
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hg1b
Abstract: marking 822 sot363
Text: BF1207 Dual N-channel dual gate MOSFET Rev. 2 — 7 September 2011 Product data sheet 1. Product profile 1.1 General description The BF1207 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads and an integrated switch. The source and substrate are interconnected. Internal bias circuits enable Direct Current
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BF1207
BF1207
OT363
hg1b
marking 822 sot363
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dual-gate
Abstract: BF1212R datasheet BF1212 BF1212R BF1212WR
Text: DISCRETE SEMICONDUCTORS DATA SHEET BF1212; BF1212R; BF1212WR N-channel dual-gate MOS-FETs Product specification 2003 Nov 14 NXP Semiconductors Product specification BF1212; BF1212R; BF1212WR N-channel dual-gate MOS-FETs FEATURES PINNING • Short channel transistor with high forward transfer
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BF1212;
BF1212R;
BF1212WR
R77/02/pp16
dual-gate
BF1212R datasheet
BF1212
BF1212R
BF1212WR
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DUAL-GATE
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BF1212; BF1212R; BF1212WR N-channel dual-gate MOS-FETs Product specification 2003 Nov 14 NXP Semiconductors Product specification BF1212; BF1212R; BF1212WR N-channel dual-gate MOS-FETs FEATURES PINNING • Short channel transistor with high forward transfer
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BF1212;
BF1212R;
BF1212WR
R77/02/pp16
DUAL-GATE
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Untitled
Abstract: No abstract text available
Text: SO T6 66 BF1206F Dual N-channel dual gate MOSFET Rev. 2 — 7 September 2011 Product data sheet 1. Product profile 1.1 General description The BF1206F is a combination of two different dual gate MOSFET amplifiers with shared source and gate2 leads. The source and substrate are interconnected. Internal bias circuits enable Direct Current
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BF1206F
BF1206F
OT666
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Untitled
Abstract: No abstract text available
Text: BF904A; BF904AR; BF904AWR N-channel dual gate MOS-FETs Rev. 04 — 13 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact
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BF904A;
BF904AR;
BF904AWR
BF904A
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