NXP TRANSISTOR SMD 13 Search Results

NXP TRANSISTOR SMD 13 Result Highlights (5)

Part	Manufacturer	Description
BLM15PX121BH1D	Murata Manufacturing Co Ltd	FB SMD 0402inch 120ohm POWRTRN
BLM15PX181SH1D	Murata Manufacturing Co Ltd	FB SMD 0402inch 180ohm POWRTRN
BLM21HE802SN1L	Murata Manufacturing Co Ltd	FB SMD 0805inch 8000ohm NONAUTO
BLM15PX330BH1D	Murata Manufacturing Co Ltd	FB SMD 0402inch 33ohm POWRTRN
BLM15PX600SH1D	Murata Manufacturing Co Ltd	FB SMD 0402inch 60ohm POWRTRN

NXP TRANSISTOR SMD 13 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
transistor K 1352 Abstract: C5750X7R1H106M TRANSISTOR K 135 VJ1206Y104KXB 30RF35 BLF6G27-135 BLF6G27LS-135 C4532X7R1H475M RF35 722 smd transistor Text: BLF6G27-135; BLF6G27LS-135 WiMAX power LDMOS transistor Rev. 02 — 26 May 2008 Product data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance	Original	BLF6G27-135; BLF6G27LS-135 ACPR885k ACPR1980k IS-95 BLF6G27-135 BLF6G27LS-135 transistor K 1352 C5750X7R1H106M TRANSISTOR K 135 VJ1206Y104KXB 30RF35 C4532X7R1H475M RF35 722 smd transistor	PDF
30RF35 Abstract: VJ1206Y104KXB smd transistor equivalent table Text: BLF6G27-135; BLF6G27LS-135 WiMAX power LDMOS transistor Rev. 01 — 21 February 2008 Preliminary data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1.	Original	BLF6G27-135; BLF6G27LS-135 ACPR885k ACPR1980k IS-95 BLF6G27-135 BLF6G27LS-135 30RF35 VJ1206Y104KXB smd transistor equivalent table	PDF
transistor d 1302 Abstract: smd transistor 927 smd transistor equivalent table Duroid 6006 sot922 radar circuit component Text: BLS6G2933S-130 LDMOS S-band radar power transistor Rev. 02 — 18 June 2009 Preliminary data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance	Original	BLS6G2933S-130 BLS6G2933S-130 transistor d 1302 smd transistor 927 smd transistor equivalent table Duroid 6006 sot922 radar circuit component	PDF
amplifier TRANSISTOR 12 GHZ Abstract: smd transistor w J 3 58 smd transistor equivalent table smd transistor 927 Text: BLS6G2933S-130 LDMOS S-band radar power transistor Rev. 01 — 11 December 2008 Objective data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance	Original	BLS6G2933S-130 BLS6G2933S-130 amplifier TRANSISTOR 12 GHZ smd transistor w J 3 58 smd transistor equivalent table smd transistor 927	PDF
C4532X7R1E475M Abstract: AVX12065C224K BLF6G22LS-130 GRM217BR71H104KA11L RO4350B capacitor 220 uf Text: BLF6G22LS-130 Power LDMOS transistor Rev. 01 — 23 May 2008 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.	Original	BLF6G22LS-130 BLF6G22LS-130 C4532X7R1E475M AVX12065C224K GRM217BR71H104KA11L RO4350B capacitor 220 uf	PDF
BLF6G20-110 Abstract: BLF6G20LS-110 RF35 Text: BLF6G20-110; BLF6G20LS-110 Power LDMOS transistor Rev. 03 — 13 January 2009 Product data sheet 1. Product profile 1.1 General description 110 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance	Original	BLF6G20-110; BLF6G20LS-110 BLF6G20-110 BLF6G20LS-110 RF35	PDF
BLF6G10LS-135RN Abstract: 2360D BLF6G10-135RN RF35 1961 30 TRANSISTOR Text: BLF6G10-135RN; BLF6G10LS-135RN Power LDMOS transistor Rev. 02 — 21 January 2010 Product data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance	Original	BLF6G10-135RN; BLF6G10LS-135RN BLF6G10-135RN 10LS-135RN BLF6G10LS-135RN 2360D RF35 1961 30 TRANSISTOR	PDF
Untitled Abstract: No abstract text available Text: BLF6G10-135RN; BLF6G10LS-135RN Power LDMOS transistor Rev. 02 — 21 January 2010 Product data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance	Original	BLF6G10-135RN; BLF6G10LS-135RN BLF6G10-135RN 10LS-135RN	PDF
Untitled Abstract: No abstract text available Text: BLF644P Broadband power LDMOS transistor Rev. 2 — 27 June 2014 Product data sheet 1. Product profile 1.1 General description A 70 W LDMOS RF power transistor for broadcast transmitter, communications and industrial applications. The transistor is suitable for the frequency range HF to 1300 MHz.	Original	BLF644P	PDF
2360d Abstract: BLF6G10-135RN BLF6G10LS-135RN RF35 SMD TRANSISTOR LIST Text: BLF6G10-135RN; BLF6G10LS-135RN Power LDMOS transistor Rev. 01 — 10 February 2009 Product data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance	Original	BLF6G10-135RN; BLF6G10LS-135RN BLF6G10-135RN 10LS-135RN 2360d BLF6G10LS-135RN RF35 SMD TRANSISTOR LIST	PDF
Untitled Abstract: No abstract text available Text: BLS6G2933S-130 LDMOS S-band radar power transistor Rev. 03 — 3 March 2010 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance	Original	BLS6G2933S-130 BLS6G2933S-130	PDF
Untitled Abstract: No abstract text available Text: BLS6G2933S-130 LDMOS S-band radar power transistor Rev. 03 — 3 March 2010 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance	Original	BLS6G2933S-130 BLS6G2933S-130	PDF
transistor j449 Abstract: SOT113 JESD625-A 001aam267 Text: BLL6H0514L-130; BLL6H0514LS-130 LDMOS driver transistor Rev. 2 — 13 September 2010 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz range. Table 1. Application information	Original	BLL6H0514L-130; BLL6H0514LS-130 BLL6H0514L-130 0514LS-130 transistor j449 SOT113 JESD625-A 001aam267	PDF
Untitled Abstract: No abstract text available Text: BLF10M6135; BLF10M6LS135 Power LDMOS transistor Rev. 1 — 24 June 2014 Product data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for industrial applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance	Original	BLF10M6135; BLF10M6LS135 BLF10M6135	PDF

JESD625-A Abstract: No abstract text available Text: BLL6H0514L-130; BLL6H0514LS-130 LDMOS driver transistor Rev. 1 — 9 August 2010 Preliminary data sheet 1. Product profile 1.1 General description 130 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz range. Table 1. Application information	Original	BLL6H0514L-130; BLL6H0514LS-130 BLL6H0514L-130 0514LS-130 JESD625-A	PDF
sot1121a Abstract: J226 SMD Text: BLF7G21L-160P; BLF7G21LS-160P Power LDMOS transistor Rev. 2 — 13 October 2011 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2050 MHz. Table 1. Typical performance	Original	BLF7G21L-160P; BLF7G21LS-160P BLF7G21L-160P 7G21LS-160P sot1121a J226 SMD	PDF
Untitled Abstract: No abstract text available Text: BLF7G21L-160P; BLF7G21LS-160P Power LDMOS transistor Rev. 2 — 13 October 2011 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2050 MHz. Table 1. Typical performance	Original	BLF7G21L-160P; BLF7G21LS-160P BLF7G21L-160P 7G21LS-160P	PDF
Untitled Abstract: No abstract text available Text: PBSS5620PA 20 V, 6 A PNP low VCEsat BISS transistor Rev. 01 — 13 April 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with	Original	PBSS5620PA OT1061 PBSS4620PA. PBSS5620PA	PDF
ATC100B Abstract: AVX1206 BLF7G22LS-130 RO4350 PLW70 TRANSISTOR BC 338 SMD Text: BLF7G22L-130N Power LDMOS transistor Rev. 1 — 25 February 2011 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance	Original	BLF7G22L-130N ATC100B AVX1206 BLF7G22LS-130 RO4350 PLW70 TRANSISTOR BC 338 SMD	PDF
j310 replacement Abstract: 26275 Text: BLF7G27L-135 Power LDMOS transistor Rev. 2 — 26 March 2012 Product data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for base station applications at frequencies from 2600 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.	Original	BLF7G27L-135 j310 replacement 26275	PDF
Untitled Abstract: No abstract text available Text: BLF7G27L-135 Power LDMOS transistor Rev. 2 — 26 March 2012 Product data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for base station applications at frequencies from 2600 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.	Original	BLF7G27L-135	PDF
ATC100B Abstract: avx1206 BLF7G22L-130 BLF7G22LS-130 RO4350 transistor BC 185 Text: BLF7G22L-130; BLF7G22LS-130 Power LDMOS transistor Rev. 4 — 20 January 2011 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance	Original	BLF7G22L-130; BLF7G22LS-130 BLF7G22L-130 7G22LS-130 ATC100B avx1206 BLF7G22LS-130 RO4350 transistor BC 185	PDF
PBSS5620PA Abstract: No abstract text available Text: PBSS5620PA 20 V, 6 A PNP low VCEsat BISS transistor Rev. 01 — 13 April 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with	Original	PBSS5620PA OT1061 PBSS4620PA. PBSS5620PA	PDF
Untitled Abstract: No abstract text available Text: BLF7G22L-130; BLF7G22LS-130 Power LDMOS transistor Rev. 2 — 4 October 2010 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance	Original	BLF7G22L-130; BLF7G22LS-130 BLF7G22L-130 7G22LS-130	PDF

NXP TRANSISTOR SMD 13 Search Results

NXP TRANSISTOR SMD 13 Result Highlights (5)

NXP TRANSISTOR SMD 13 Datasheets Context Search

transistor K 1352

30RF35

transistor d 1302

amplifier TRANSISTOR 12 GHZ

C4532X7R1E475M

BLF6G20-110

BLF6G10LS-135RN

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2360d

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transistor j449

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JESD625-A

sot1121a

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ATC100B

j310 replacement

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ATC100B

PBSS5620PA

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