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    NY MAKING TRANSISTOR Search Results

    NY MAKING TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    NY MAKING TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    sot883

    Abstract: CET3904E CET3906E
    Text: News Release Released – November 19, 2008 145 Adams Avenue Hauppauge, NY 11788 USA Tel: 631 435-1110 Fax: (631) 435-1824 Contact: Tom Donofrio Email: [email protected] www.centralsemi.com For Immediate Release Central Semiconductor’s Low VCE(SAT) Transistors


    Original     		OT-883L CET3904E CET3906E OT-883L 200mA 250mW OT-923 100mW. CET3904E CET3906E sot883 PDF

    Untitled

    Abstract: No abstract text available
    Text: GLOSSARY OF TERMS AND DEFINITIONS Knurl - A vertical serration machined around the diameter of an interconnect pin providing a retention feature for press-fitting in a P.C. board or insulator and also prevents rotation of the pin. LCP Liquid Crystal Polymer - 30 % glass filled


    Original     		PDF

    single phase half bridge inverter

    Abstract: IGBT gate drive board fire sensor LM35 single phase IGBT based PWM inverters LEM sensor CURRENT single phase igbt based inverter 200 amps circuit board 5045-04A single phase igbt based inverter 200 amps circuit lem HA Lm35 with application note
    Text: APPLIED POWER SYSTEMS, INC. BAP1551 Gate Drive Board BAP1551 Gate Drive Board Application Note and Datasheet for Half Bridge Inverters Patent Pending Introduction The BAP1551 Insulated Gate Bipolar Transistor IGBT Gate Drive Board (GDB) discussed in this Datasheet/Applications Note provides a safe, reliable, isolated interface between control


    Original     		BAP1551 LM-35 single phase half bridge inverter IGBT gate drive board fire sensor LM35 single phase IGBT based PWM inverters LEM sensor CURRENT single phase igbt based inverter 200 amps circuit board 5045-04A single phase igbt based inverter 200 amps circuit lem HA Lm35 with application note PDF

    Untitled

    Abstract: No abstract text available
    Text: APPLIED POWER SYSTEMS, INC. BAP1551 Gate Drive Board BAP1551 Gate Drive Board Application Note and Datasheet for Half Bridge Inverters Figure 1: BAP1551 IGBT Gate Driver Board Patent Pending Introduction The BAP1551 Insulated Gate Bipolar Transistor IGBT Gate Drive Board (GDB)


    Original     		BAP1551 LM-35 PDF

    Untitled

    Abstract: No abstract text available
    Text: Ultra Low Noise MMIC Ampli er PMA-545G2+ 50Ω ฀฀฀฀฀฀฀1.1฀to฀1.6฀GHz฀ The Big Deal •฀High฀Gain,฀30฀dB •฀Low฀Noise฀Figure,฀1.0฀dB •฀High฀IP3,฀34฀dBm 3mm฀x฀3mm฀MCLP฀Pkg Product Overview ฀


    Original     		PMA-545G2+ PDF

    Untitled

    Abstract: No abstract text available
    Text: Ultra Low Noise MMIC Ampli er PMA-545G3+ 50Ω ฀฀฀฀฀฀฀0.7฀to฀1.0฀GHz฀ The Big Deal •฀High฀Gain,฀31฀dB •฀Low฀Noise฀Figure,฀0.9฀dB •฀High฀IP3,฀34฀dBm 3mm฀x฀3mm฀MCLP฀Pkg Product Overview ฀


    Original     		PMA-545G3+ PDF

    Untitled

    Abstract: No abstract text available
    Text: Low Noise, High IP3 Monolithic Ampli er PMA-545G1+ 50Ω ฀฀฀฀฀฀฀0.4฀to฀2.2฀GHz฀ The Big Deal •฀High฀Gain,฀31.5฀dB •฀Low฀Noise฀Figure,฀1.0฀dB •฀High฀IP3,฀32-35฀dBm 3mm฀x฀3mm฀MCLP฀Pkg LTE Performance


    Original     		PMA-545G1+ PDF

    Untitled

    Abstract: No abstract text available
    Text: Ultra Low Noise MMIC Amplifier 50Ω PMA-545+ 0.05 to 6 GHz The Big Deal • Ultra Low Noise Figure, 0.8 dB • Ultra High IP3 • Up to 6 GHz Product Overview 3mm x 3mm MCLP [ EIA: QFN Pkg ☛ LTE Performance Summary Performance at 1 GHz Mini-Circuits PMA-545+ is a E-PHEMT based Ultra-Low


    Original     		PMA-545+ PDF

    Untitled

    Abstract: No abstract text available
    Text: Low Noise, High IP3 Monolithic Amplifier 50Ω PMA-545G1+ 0.4 to 2.2 GHz The Big Deal • High Gain, 31.5 dB • Low Noise Figure, 1.0 dB • High IP3, 32-35 dBm 3mm x 3mm MCLP Pkg LTE Performance Product Overview Mini-Circuits PMA-545G1+ is a E-PHEMT based Low Noise MMIC Amplifier operating from 0.4 to 2.2 GHz


    Original     		PMA-545G1+ PDF

    PMA-545

    Abstract: No abstract text available
    Text: Ultra Low Noise MMIC Amplifier 50Ω PMA-545+ 0.05 to 6 GHz The Big Deal • Ultra Low Noise Figure, 0.8 dB • Ultra High IP3 • Up to 6 GHz Product Overview 3mm x 3mm MCLP [ EIA: QFN Pkg ☛ LTE Performance Summary Performance at 1 GHz Mini-Circuits PMA-545+ is a E-PHEMT based Ultra-Low


    Original     		PMA-545+ PMA-545 PDF

    Untitled

    Abstract: No abstract text available
    Text: Ultra Low Noise MMIC Amplifier 50Ω PMA-545G2+ 1.1 to 1.6 GHz The Big Deal • High Gain, 30 dB • Low Noise Figure, 1.0 dB • High IP3, 34 dBm 3mm x 3mm MCLP Pkg Product Overview Mini-Circuits PMA-545G2+ is a E-PHEMT based Low Noise MMIC Amplifier operating from 1.2 to 1.6 GHz


    Original     		PMA-545G2+ PDF

    Untitled

    Abstract: No abstract text available
    Text: Ultra Low Noise MMIC Ampli er PMA-545+ 50Ω ฀฀฀฀฀฀฀0.05฀to฀6฀GHz฀ The Big Deal •฀Ultra฀Low฀Noise฀Figure,฀0.8 dB •฀Ultra฀High฀IP3 •฀Up฀to฀6฀GHz Product Overview 3mm฀x฀3mm฀MCLP฀[฀EIA:฀QFN ฀Pkg


    Original     		PMA-545+ PDF

    transistor c 6073

    Abstract: No abstract text available
    Text: Ultra Low Noise MMIC Amplifier 50Ω PMA-545G2+ 1.1 to 1.6 GHz The Big Deal • High Gain, 30 dB • Low Noise Figure, 1.0 dB • High IP3, 34 dBm 3mm x 3mm MCLP Pkg Product Overview Mini-Circuits PMA-545G2+ is a E-PHEMT based Low Noise MMIC Amplifier operating from 1.2 to 1.6 GHz


    Original     		PMA-545G2+ transistor c 6073 PDF

    Untitled

    Abstract: No abstract text available
    Text: Ultra Low Noise MMIC Amplifier 50Ω PMA-545G1+ 0.4 to 2.2 GHz The Big Deal • High Gain, 31.5 dB • Low Noise Figure, 1.0 dB • High IP3, 32-35 dBm 3mm x 3mm MCLP Pkg ☛ LTE Performance Product Overview Mini-Circuits PMA-545G1+ is a E-PHEMT based Low Noise MMIC Amplifier operating from 0.4 to 2.2 GHz


    Original     		PMA-545G1+ PDF

    Untitled

    Abstract: No abstract text available
    Text: Low Noise, High IP3 Monolithic Amplifier 50Ω PMA-545+ 0.05 to 6 GHz The Big Deal • Ultra Low Noise Figure, 0.8 dB • Ultra High IP3 • Up to 6 GHz Product Overview 3mm x 3mm MCLP [ EIA: QFN Pkg ☛ LTE Performance Summary Performance at 1 GHz Mini-Circuits PMA-545+ is a E-PHEMT based Ultra-Low


    Original     		PMA-545+ PDF

    transistor 80505

    Abstract: No abstract text available
    Text: S i GEC PLESSEY junei997 SEMI CO NDUC TOR S PRELIMINARY INFORMATION DS4715-1.3 ITS60F06 POWERLINE N-CHANNEL IGBT The ITS60F06 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage


    OCR Scan     		junei997 DS4715-1 ITS60F06 ITS60F06 transistor 80505 PDF

    transistor 80505

    Abstract: POWER BIPOLAR JUNCTION TRANSISTOR transistor 80505
    Text: S i GEC PLESSEY junei997 SEMI CO NDUC TOR S PRELIMINARY INFORMATION DS4712-1.3 ITS13F06 POWERLINE N-CHANNEL IGBT The ITS13F06 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage


    OCR Scan     		junei997 DS4712-1 ITS13F06 ITS13F06 transistor 80505 POWER BIPOLAR JUNCTION TRANSISTOR transistor 80505 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si GEC P L ES SE Y SEPTEMBER 1997 ADVANCE INFORMATION S E M I C O N D U C T O R S DS4719-2.2 ITS35F12 POWERLINE N-CHANNEL IGBT The ITS35F12 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage


    OCR Scan     		DS4719-2 ITS35F12 ITS35F12 PDF

    transistor bra 44

    Abstract: No abstract text available
    Text: S i GEC P L ES SE Y SEPTEM BERS ADVANCE INFORMATION S E M I C O N D U C T O R S DS4718-2.2 ITS25F12 POWERLINE N-CHANNEL IGBT The ITS25F12 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage


    OCR Scan     		DS4718-2 ITS25F12 ITS25F12 transistor bra 44 PDF

    Untitled

    Abstract: No abstract text available
    Text: S i GEC P L ES SE Y SEPTEMBER 1997 ADVANCE INFORMATION S E M I C O N D U C T O R S D S4711-2.3 ITS08F06 POWERLINE N-CHANNEL IGBT The ITS08F06 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage


    OCR Scan     		S4711-2 ITS08F06 ITS08F06 PDF

    Untitled

    Abstract: No abstract text available
    Text: S i GEC P L ES SE Y SEPTEMBER 1997 ADVANCE INFORMATION S E M I C O N D U C T O R S DS4717-2.2 ITS15F12 POWERLINE N-CHANNEL IGBT The ITS15F12 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage


    OCR Scan     		DS4717-2 ITS15F12 ITS15F12 PDF

    DS4713-2

    Abstract: No abstract text available
    Text: 3Ë GEC P L E S S E Y SEPTEMBER 1997 SEMICONDUCTORS ADVANCE INFORMATION DS4713-2.2 ITS23F06 POWERLINE N-CHANNEL IGBT The ITS23F06 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage


    OCR Scan     		DS4713-2 ITS23F06 ITS23F06 PDF

    Untitled

    Abstract: No abstract text available
    Text: S i GEC P L ES SE Y SEPTEMBER 1997 ADVANCE INFORMATION S E M I C O N D U C T O R S DS4682-3.3 ITS40F06 POWERLINE N-CHANNEL IGBT The ITS40F06 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage


    OCR Scan     		DS4682-3 ITS40F06 ITS40F06 PDF

    2sd1805a

    Abstract: 2SD1805
    Text: SA NY O S E M I C O N D U C T O R CORP 7 T T 7 0 7 ta G 0 0 7 5 4 ci T 2SE D T-33-0 2SD1805 7 # * NPN Epitaxial Planar Silicon Transistor 2044 High-Current Switching Applications ansa Applications . Strobes, voltage regulators, relay drivers, lamp drivers


    OCR Scan     		7T707tu 2SD1805 T-33-07 2SD1805-applied 2sd1805a PDF