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    NY TRANSISTOR MAKING Search Results

    NY TRANSISTOR MAKING Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    NY TRANSISTOR MAKING Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    EN4094

    Abstract: No abstract text available
    Text: SA NY O S E M I C O N D U C T O R CORP Ordering number: EN4094 b3E D • 7n7D7b D Q l E M ô b 04Ô * T S A J I Monolithic Digital 1C SÄWO LB1741 No. 4094 Octal NPN Darlington-pair Transistor Array PINOUT OVERVIEW The LB1741 is a high-current Darlington-pair transistor


    OCR Scan     		EN4094 LB1741 LB1741 18-pin EN4094 PDF

    2sd1805a

    Abstract: 2SD1805
    Text: SA NY O S E M I C O N D U C T O R CORP 7 T T 7 0 7 ta G 0 0 7 5 4 ci T 2SE D T-33-0 2SD1805 7 # * NPN Epitaxial Planar Silicon Transistor 2044 High-Current Switching Applications ansa Applications . Strobes, voltage regulators, relay drivers, lamp drivers


    OCR Scan     		7T707tu 2SD1805 T-33-07 2SD1805-applied 2sd1805a PDF

    P41 transistor

    Abstract: high gain PNP POWER TRANSISTOR SOT23 NY TRANSISTOR MAKING transistor marking 44 sot23 making 2a sot23 ZXTP2041F ZXTP2041FTA ZXTP2041FTC
    Text: ZXTP2041F SOT23 40 volt PNP silicon planar medium power transistor Summary V BR CEO > -40V Ic(cont) = -1A Vce(sat) < -500mV @ -1A Complementary type ZXTP2041F Description This transistor combines high gain, high current operation and low saturation voltage making it


    Original     		ZXTP2041F -500mV ZXTP2041FTA ZXTP2041FTC P41 transistor high gain PNP POWER TRANSISTOR SOT23 NY TRANSISTOR MAKING transistor marking 44 sot23 making 2a sot23 ZXTP2041F ZXTP2041FTA ZXTP2041FTC PDF

    marking 8A sot223

    Abstract: sot223 transistor pinout transistor pnp 12V 1A Continuous Current Peak FZT717 FZT717TA 12v pnp transistor zetex 320
    Text: FZT717 SOT223 PNP medium power transistor Summary BVCEO = -12V; IC = 3A Description Packaged in the SOT223 outline this low saturation 12V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions.


    Original     		FZT717 OT223 FZT717TA marking 8A sot223 sot223 transistor pinout transistor pnp 12V 1A Continuous Current Peak FZT717 FZT717TA 12v pnp transistor zetex 320 PDF

    transistor marking 44 sot23

    Abstract: P41 transistor high gain PNP POWER TRANSISTOR SOT23 Zetex ZXTP2041F ZXTP2041FTA ZXTP2041FTC
    Text: ZXTP2041F SOT23 40 volt PNP silicon planar medium power transistor Summary V BR CEO > -40V Ic(cont) = -1A Vce(sat) < -500mV @ -1A Complementary type ZXTP2041F Description This transistor combines high gain, high current operation and low saturation voltage making it


    Original     		ZXTP2041F -500mV ZXTP2041FTA ZXTP2041FTC transistor marking 44 sot23 P41 transistor high gain PNP POWER TRANSISTOR SOT23 Zetex ZXTP2041F ZXTP2041FTA ZXTP2041FTC PDF

    ZXTP2041

    Abstract: ic 4446 P41 sot23 NPN
    Text: ZXTP2041F SOT23 40 volt NPN silicon planar medium power transistor Summary V BR CEO > -40V Ic(cont) = -1A Vce(sat) < -500mV @ -1A Complementary type ZXTP2041F Description This transistor combines high gain, high current operation and low saturation voltage making it


    Original     		ZXTP2041F -500mV ZXTP2041F ZXTP2041FTA ZXTP2041FTC ZXTP2041 ic 4446 P41 sot23 NPN PDF

    Untitled

    Abstract: No abstract text available
    Text: High Power Transient Voltage Suppressor Modules Transient energy pulses are notorious among designers of all kinds of electronic hardware for their ability to cause failures in circuits of apparently conservative design. Logic circuits, for example, are subject to “glitches” and timing problems if even small transient voltages appear on


    Original     		PDF

    X5T851

    Abstract: ZX5T851A ZX5T851ASTOA ZX5T851ASTZ
    Text: ZX5T851A 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN E-LINE SUMMARY BVCEO = 60V : RSAT = 34m ; IC = 4.5A DESCRIPTION Packaged in the E-line outline this new 5th generation low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC


    Original     		ZX5T851A ZX5T851ASTOA ZX5T851ASTZ X5T851 ZX5T851A ZX5T851ASTOA ZX5T851ASTZ PDF

    Untitled

    Abstract: No abstract text available
    Text: ZXTN2010A 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN E-LINE SUMMARY BVCEO = 60V : RSAT = 34m ; IC = 4.5A DESCRIPTION Packaged in the E-line outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits


    Original     		ZXTN2010A ZXTN2010ASTOA ZXTN2010AST) PDF

    ZX5T853Z

    Abstract: ZX5T853ZTA
    Text: ZX5T853Z 100V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 100V : RSAT = 31m ; IC = 4.5A DESCRIPTION Packaged in the SOT89 outline this new 5th generation low saturation 100V NPN transistor offers extremely low on state losses making it ideal for use in


    Original     		ZX5T853Z ZX5T853ZTA ZX5T853Z ZX5T853ZTA PDF

    ZXTN

    Abstract: ZXTN2011GTC sot223 device Marking ZXTN2011G ZXTN2011GTA Bv 42 transistor
    Text: ZXTN2011G 100V NPN LOW SATURATION MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 100V : RSAT = 36m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new low saturation 100V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits


    Original     		ZXTN2011G OT223 OT223 ZXTN2011GTA ZXTN2011GTC ZXTN ZXTN2011GTC sot223 device Marking ZXTN2011G ZXTN2011GTA Bv 42 transistor PDF

    ZXTP2012A

    Abstract: ZXTP2012ASTOA ZXTP2012ASTZ
    Text: ZXTP2012A 60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN E-LINE SUMMARY BVCEO = -60V : RSAT = 38m ; IC = -3.5A DESCRIPTION Packaged in the E-line outline this new low saturation 60V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits


    Original     		ZXTP2012A ZXTP2012ASTOA ZXTP2012ASTZ ZXTP2012A ZXTP2012ASTOA ZXTP2012ASTZ PDF

    ZXTN2010A

    Abstract: ZXTN2010ASTOA ZXTN2010ASTZ
    Text: ZXTN2010A 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN E-LINE SUMMARY BVCEO = 60V : RSAT = 34m ; IC = 4.5A DESCRIPTION Packaged in the E-line outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits


    Original     		ZXTN2010A ZXTN2010ASTOA ZXTN2010ASTZ ZXTN2010A ZXTN2010ASTOA ZXTN2010ASTZ PDF

    IC2A

    Abstract: marking N20 ZXTN2010A ZXTN2010ASTOA ZXTN2010ASTZ
    Text: ZXTN2010A 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN E-LINE SUMMARY BVCEO = 60V : RSAT = 34m ; IC = 4.5A DESCRIPTION Packaged in the E-line outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits


    Original     		ZXTN2010A ZXTN2010ASTOA ZXTN2010ASTZ IC2A marking N20 ZXTN2010A ZXTN2010ASTOA ZXTN2010ASTZ PDF

    X5T951

    Abstract: No abstract text available
    Text: ZX5T951A 60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN E-LINE SUMMARY BVCEO = -60V : RSAT = 38m ; IC = -3.5A DESCRIPTION Packaged in the E-line outline this new 5th generation low saturation 60V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC


    Original     		ZX5T951A ZX5T951ASTOA ZX5T951ASTZ X5T951 PDF

    PNP POWER TRANSISTOR SOT23

    Abstract: FT-110 sot23 6 device Marking SOT23-6 ZXTP2006E6 ZXTP2006E6TA ZXTP2006E6TC 52 sot23-6 PNP SOT23-6 .FT SOT23-6
    Text: ZXTP2006E6 20V PNP LOW SAT MEDIUM POWER TRANSISTOR IN SOT23-6 SUMMARY BVCEO = -20V : RSAT = 31m ; IC = -3.5A DESCRIPTION Packaged in the SOT23-6 outline this new low saturation 20V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits


    Original     		ZXTP2006E6 OT23-6 OT23-6 -70mV A/100mA ZXTP2006E6TA PNP POWER TRANSISTOR SOT23 FT-110 sot23 6 device Marking SOT23-6 ZXTP2006E6 ZXTP2006E6TA ZXTP2006E6TC 52 sot23-6 PNP SOT23-6 .FT SOT23-6 PDF

    zxtP

    Abstract: ZXTP2014G ZXTP2014GTA ZXTP2014GTC
    Text: ZXTP2014G 140V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -140V : RSAT = 92m ; IC = -4A DESCRIPTION Packaged in the SOT223 outline this new low saturation 140V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits


    Original     		ZXTP2014G OT223 -140V OT223 ZXTP2014GTA ZXTP2014GTC zxtP ZXTP2014G ZXTP2014GTA ZXTP2014GTC PDF

    Bv 42 transistor

    Abstract: zxtP sot223 device Marking ZXTP2013G ZXTP2013GTA ZXTP2013GTC
    Text: ZXTP2013G 100V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -100V : RSAT = 60m ; IC = -5A DESCRIPTION Packaged in the SOT223 outline this new low saturation 100V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits


    Original     		ZXTP2013G OT223 -100V OT223 ZXTP2013GTA ZXTP2013GTC DEV26100 Bv 42 transistor zxtP sot223 device Marking ZXTP2013G ZXTP2013GTA ZXTP2013GTC PDF

    ZXTP2014Z

    Abstract: ZXTP2014ZTA
    Text: ZXTP2014Z 140V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -140V : RSAT = 85m ; IC = -3A DESCRIPTION Packaged in the SOT89 outline this new low saturation 140V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line


    Original     		ZXTP2014Z -140V ZXTP2014ZTA ZXTP2014Z ZXTP2014ZTA PDF

    ZXTN2011G

    Abstract: ZXTN2011GTA ZXTN2011GTC
    Text: ZXTN2011G 100V NPN LOW SATURATION MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 100V : RSAT = 36m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new low saturation 100V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits


    Original     		ZXTN2011G OT223 OT223 ZXTN2011GTA ZXTN2011GTC ZXTN2011G ZXTN2011GTA ZXTN2011GTC PDF

    ZX5T853G

    Abstract: ZX5T853GTA ZX5T853GTC
    Text: ZX5T853G 100V NPN LOW SAT MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 100V : RSAT = 36m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 100V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC


    Original     		ZX5T853G OT223 OT223 ZX5T853GTA ZX5T853GTC ZX5T853G ZX5T853GTA ZX5T853GTC PDF

    Untitled

    Abstract: No abstract text available
    Text: ZXTN2011Z 100V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 100V : RSAT = 31m ; IC = 4.5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 100V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits


    Original     		ZXTN2011Z ZXTN2011ZTA ZXTN20miconductors PDF

    Bv 42 transistor

    Abstract: No abstract text available
    Text: ZXTP2014Z 140V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -140V : RSAT = 85m ; IC = -3A DESCRIPTION Packaged in the SOT89 outline this new low saturation 140V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line


    Original     		ZXTP2014Z -140V ZXTP2014ZTA Bv 42 transistor PDF

    ZX5T953GTA

    Abstract: ZX5T953G ZX5T953GTC x5t953
    Text: ZX5T953G 100V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -100V : RSAT = 60m ; IC = -5A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 100V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC


    Original     		ZX5T953G OT223 -100V OT223 ZX5T953GTA ZX5T953GTC ZX5T953GTA ZX5T953G ZX5T953GTC x5t953 PDF