diode t25 4 j6
Abstract: SCHEMATIC VGA serial port to 4 pin usb 14 pin vga to rca cable schematic SCHEMATIC USB to VGA vga to rca schematic schematic vga switch smd diode s5d SCHEMATIC VGA board smd diode s1B S5B smd
Text: Evaluation Board for ADG790 EVAL-ADG790 the user to connect various signal sources USB/VGA/S-Video to the switch. All signals applied to the switch can be monitored using the test points (T1 to T32) on the board. See the ADG790 Switch Pins, Test Points, and Connectors section for a detailed
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ADG790
EVAL-ADG790
ADG790
re663
ADG790BCBZ
CY7C68013-56LFC
ADP3303ARZ-3
XC1009CT-ND
diode t25 4 j6
SCHEMATIC VGA serial port to 4 pin usb
14 pin vga to rca cable schematic
SCHEMATIC USB to VGA
vga to rca schematic
schematic vga switch
smd diode s5d
SCHEMATIC VGA board
smd diode s1B
S5B smd
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Untitled
Abstract: No abstract text available
Text: Low Voltage, CMOS Multimedia Switch ADG790 FEATURES Single-chip audio/video/data switching solution Wide bandwidth section Rail-to-rail signal switching capability Compliant with full speed USB 2.0 signaling 3.6 V p-p Compliant with high speed USB 2.0 signaling (400 mV p-p)
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ADG790
30-ball
DIS24
CB-30-1)
ADG790BCBZ-REEL
EVAL-ADG790EBZ1
CB-30-1
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Untitled
Abstract: No abstract text available
Text: HUF76107D3, HUF76107D3S Semiconductor Data Sheet 20A, 30 V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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HUF76107D3,
HUF76107D3S
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75321D
Abstract: d3s diode DIODE D3S 90 430E1
Text: HUF75321D3, HUF75321D3S Semiconductor Data Sheet June 1999 20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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HUF75321D3,
HUF75321D3S
TA75322
72e-2
67e-2
30e-1
49e-1
HUF75321D
10e-3
75321D
d3s diode
DIODE D3S 90
430E1
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TSOP-6 .54
Abstract: AN7254 AN7260 ITF87012SVT SC-95 TB370
Text: ITF87012SVT interrii January. m i Data Sheet PRELIMINARY 6A, 20 V, 0.035 Ohm, N-Channel, 2.5V Specified Power MOSFET File Number 4810.1 Features • Ultra Low On-Resistance ‘ rDS ON = 0.035i2, VGs = 4.5V Packaging ‘ rDS(ON) = 0.038i2, VGs = 4.0V TSOP-6
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ITF87012SVT
00e-3
10e-2
00e-2
00e-1
20e-2
00e-2
TSOP-6 .54
AN7254
AN7260
ITF87012SVT
SC-95
TB370
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DFRC
Abstract: 86130 2A1050 AN7254 AN7260 ITF86130SK8T MS-012AA TB370 bv164 RS391
Text: in t e ITF86130SK8T r r ii J a n u a ry . Data Sheet 14A, 30V, 0.0078 Ohm, N-Channel, Logic Level, Power MOSFET File Num ber 4798.2 Features • Ultra Low On-Resistance ‘ Packaging r D S O N = 0 .0 0 7 8 a VGS= 10V ‘ rDS(ON) = 0 .0 1 0 a VGs = 4.5V
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MS-012AA)
ITF86130SK8T
0078a
MS-012AA
330mm
EIA-481
DFRC
86130
2A1050
AN7254
AN7260
ITF86130SK8T
MS-012AA
TB370
bv164
RS391
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65e9
Abstract: TB370 AN7254 AN7260 ITF86116SQT
Text: ITF86116SQT interrii 10A, 30 V, 0.012 Ohm, N-Channel, Logic Level, Power MOSFET mi J a n u a ry . Data Sheet File Number 4808.1 Features • Ultra Low On-Resistance ‘ rDS ON = 0.012£i, VGs = 10V Packaging ‘ rDS(ON) = 0.016£i, VGs = 4.5V TSSOP8 • Gate to Source Protection Diode
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ITF86116SQT
ITF86116SQT
65e9
TB370
AN7254
AN7260
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Untitled
Abstract: No abstract text available
Text: RFK70N06 HARRIS S E M I C O N D U C T O R 70A, 60V, 0.014 Ohm, N-Channel Power MOSFET June 1997 Features Description • 70A, 60V The RFK70N06 N-Channel power MOSFET is manufactured using the MegaFET process. This process, which uses fea ture sizes approaching those of LSI integrated circuits gives
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RFK70N06
RFK70N06
TA49007.
1-800-4-HARRIS
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76639p
Abstract: AN9321 AN9322 HUF76639P3 HUF76639S3S HUF76639S3ST TB334 76639S 92e2 OT 180
Text: HUF76639P3, HUF76639S3S interrii Data Sheet November 1999 File Num ber 4694.3 50A, 100V, 0.027 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-220AB JEDEC TO-263AB SO U R CE DRAIN FLA N G E • Ultra Low On-Resistance ‘ rDS(ON) = 0.026i2, VGS = 10V
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O-220AB
O-263AB
HUF76639P3
HUF76639S3S
HUF76639P3,
HUF76639P3
O-220AB
76639P
HUF76639S3S
76639p
AN9321
AN9322
HUF76639S3ST
TB334
76639S
92e2
OT 180
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76145p
Abstract: No abstract text available
Text: HUF76145P3, HUF76145S3S Semiconductor January 1999 Data Sheet 75A, 30V, 0.0045 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs t These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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HUF76145P3,
HUF76145S3S
00e-5
06e-3
07e-2
12e-2
06e-1
HUF76145
00e-3
50e-3
76145p
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Li ION spice model charge
Abstract: AN7254 AN7260 ITF87008DQT TB370 67e4
Text: ITF87008DQT interrii mi F e b u a ry . Data Sheet 7.0A, 20V, 0.023 Ohm, Dual N-Channel, 2.5V Specified Power MOSFET File Number 4814.1 Features • Ultra Low On-Resistance ‘ rDS ON = 0.023i2, VGS = 4.5V Packaging ‘ rDS(ON) = 0.024i2, VGS = 4.0V TSSOP-8
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ITF87008DQT
023avGS
024avGS
Li ION spice model charge
AN7254
AN7260
ITF87008DQT
TB370
67e4
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Untitled
Abstract: No abstract text available
Text: HUF76645P3, HUF76645S3S Semiconductor July 1999 Data Sheet File Num ber 4716.2 75A, 100V, 0.015 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-220AB JEDEC TO-263AB • U ltra Low O n-R e sistan ce • rDS ON = 0.014£i, v g s = 1°v
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HUF76645P3,
HUF76645S3S
O-220AB
O-263AB
HUF76645P3
InformatioTO-263AB
EIA-481
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FT3055LE
Abstract: No abstract text available
Text: RFT3055LE Semiconductor 2.0A, 60V, 0.150 Ohm, N-Channel, Logic Level, ESD Rated, Power MOSFET July 1998 Features Description • 2.0A, 60V This product is an N-Channel power MOSFET manufactured using the MegaFET process. This process, which uses fea ture sizes approaching those of LSI circuits, gives optimum
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RFT3055LE
0-150i2
OT-223
330mm
FT3055LE
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Untitled
Abstract: No abstract text available
Text: RFD16N05, RFD16N05SM S e m iconductor Data Sheet 16A, 50 V, 0.047 Ohm, N-Channel Power MOSFETs The RFD16N05 and RFD16N05SM N-channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon,
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RFD16N05,
RFD16N05SM
RFD16N05
RFD16N05SM
TA09771.
047i2
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Untitled
Abstract: No abstract text available
Text: HARRIS R S E M I C O N D U C T O R January 1997 F 1 K 4 9 9 2 3.5A/2.5A, 12V, Avalanche Rated, Logic Level, Complementary LittleFET Enhancement Mode Power MOSFET Features Description • 3.5A, 12V N-Channel 2.5A, 12V (P-Channel) • UIS Rating Curve
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RF1K49092
85e-10
1e-30
09e-6)
99e-6)
82e-3
47e-7)
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Untitled
Abstract: No abstract text available
Text: TO SH IBA TENTATIVE TCD2900C TOSHIBA CCD IMAGE SENSOR CCD Charge Coupled Device TCD2900C The TCD2900C is a high sensitive and low dark current 10500-elements linear image sensor. The sensor can be used for image scanner. The device contains a row of 10400 x 3 photodiodes,
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TCD2900C
TCD2900C
10500-elements
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Untitled
Abstract: No abstract text available
Text: RFD14N05, RFD14N05SM, RFP14N05 Semiconductor Data Sheet July 1999 14A, 50 V, 0.100 Ohm, N-Channel Power MOSFETs File Number 2268.5 Features • 14A, 50V These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature
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RFD14N05,
RFD14N05SM,
RFP14N05
TA09770.
1e-30
73e-4
12e-6)
53e-5)
05e-3
35e-5)
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Untitled
Abstract: No abstract text available
Text: RFD14N05L, RFD14N05LSM, RFP14N05L S e m ico n d ucto r Data Sheet April 1999 14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs • 14A, 50V • r DS ON = 0 .1 0 0 i2 • Temperature Compensating PSPICE Model • Can be Driven Directly from CMOS, NMOS, and
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RFD14N05L,
RFD14N05LSM,
RFP14N05L
TB334
TA09870.
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Untitled
Abstract: No abstract text available
Text: S-N 0 S SYSTEMS INC IDE D | 7^32^0^ 00007SÖ S I PF355-01 CCD LINE SENSOR # 5 ,0 0 0 Bits Photo-element •7 i« m Pitch •DESCRIPTION The SEA7551H is a 5,000 bits CCD line sensor which has a CCD analog shift register for reading image signals. It is possible to read a manuscript of A3 size 29.6cm x 42cm by 16 line/mm.
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00007SÖ
PF355-01
SEA7551H
22-pin
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N9321
Abstract: F7613 TA7613
Text: ? *3 2 £ HUF76137P3, HUF76137S3, HUF76137S3S 75A, 30V, 0.009 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs June 1998 | Features Description w • Logic Level Gate Drive These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the
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HUF76137P3,
HUF76137S3,
HUF76137S3S
TB334,
O-263AB
N9321
F7613
TA7613
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D15P05
Abstract: No abstract text available
Text: * f* 3 2 S RFD15P05, RFD15P05SM, RFP15P05 -15A, -50V, 0.150 Ohm, P-Channel Power MOSFETs September 1998 Features Description • -15A,-50V These are P-Channel power MOSFETs manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives opti
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RFD15P05,
RFD15P05SM,
RFP15P05
Rele-30
1e-30
15e-4
47e-3
37e-5)
D15P05
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TPG1212
Abstract: PIN diode Pspice model
Text: RF3V49092, RF3S49092, RF3S49092SM S e m iconductor November 1998 Data Sheet 20A/10A, 12V, 0.060/0.140 Ohm, Logic Level, Complementary Power MOSFETs These complementary power MOSFETs are manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated
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RF3V49092,
RF3S49092,
RF3S49092SM
0A/10A,
1-800-4-HARRIS
TPG1212
PIN diode Pspice model
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Untitled
Abstract: No abstract text available
Text: RF1K49093 HARRIS S E M I C O N D U C T O R 2.5A, 12V, Avalanche Rated, Logic Level, Dual P-Channel LittleFET Enhancement Mode Power MOSFET January 1997 Description Features 2.5 A, 12V The RF1K49093 Dual P-Channel power MOSFET is manu factured using an advanced MegaFET process. This pro
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RF1K49093
RF1K49093
85e-10
1e-30
09e-6)
99e-6)
82e-3
47e-7)
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Untitled
Abstract: No abstract text available
Text: ASSESS? RFP45N02L, RF1S45N02L, RF1S45N02LSM 45A, 20V, 0.022É1, N-Channel Logic Level Power MOSFETs May 1997 Features Description • 45A,20V The RFP45N02L, RF1S45N02L, and RF1S45N02LSM are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes
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RFP45N02L,
RF1S45N02L,
RF1S45N02LSM
RF1S45N02LSM
O-263AB
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