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    OF TRANSISTOR SL 100 Search Results

    OF TRANSISTOR SL 100 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC CA3082 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC CA3081 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
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    OF TRANSISTOR SL 100 Price and Stock

    onsemi 2N5195G

    ON Semi 2N5195G PNP Bipolar Transistor, 4 A, 80 V, 3-Pin TO-225AA | ON Semiconductor 2N5195G
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com 2N5195G 2,000
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    • 1000 $0.3956
    • 10000 $0.3604
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    OF TRANSISTOR SL 100 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    SL-60101

    Abstract: No abstract text available
    Text: Preliminary Product Description SL-6010 The SL-6010 is Stanford Microdevices’ high-linearity 60W LDMOS transistor designed for base station applications at or near 1000 MHz. Rated for minimum output power of 60W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power


    Original     		SL-6010 SL-6010 SL-60101 SL-60102 SL-60102 SL60101 SL60102 EDS-100938 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Product Description SL-8010 The SL-8010 is Stanford Microdevices’ high-linearity 80W LDMOS transistor designed for base station applications at or near 1000 MHz. Rated for minimum output power of 80W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power


    Original     		SL-8010 SL-8010 SL-80101 SL-80102 SLD-80101 SLD-80102 SL80101 SL80102 EDS-100939 PDF

    3010 MOS

    Abstract: j177 equivalent transistor
    Text: Advance Data Sheet Product Description SL-3010 The SL-3010 is Stanford Microdevices’ high-linearity 30W LDMOS transistor designed for base station applications at or near 1000 MHz. Rated for minimum output power of 30W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power


    Original     		SL-3010 SL-3010 SL-30101 SL-30102 SL-30102 3010 MOS j177 equivalent transistor PDF

    SL1010

    Abstract: SL-1010 J181 SL-10101 SL-10102
    Text: Advance Data Sheet Product Description SL-1010 The SL-1010 is Stanford Microdevices’ high-linearity 10W LDMOS transistor designed for base station applications at or near 1000 MHz. Rated for minimum output power of 10W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power


    Original     		SL-1010 SL-1010 SL-10102 SL-10101 SL1010 J181 SL-10101 SL-10102 PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance Data Sheet Product Description SL-6010 The SL-6010 is Stanford Microdevices’ high-linearity 60W LDMOS transistor designed for base station applications at or near 1000 MHz. Rated for minimum output power of 60W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power


    Original     		SL-6010 SL-6010 SL-60101 SL-60102 SL-60102 PDF

    SL-8010

    Abstract: SLD-80101 SLD-80102
    Text: Advance Data Sheet Product Description SL-8010 The SL-8010 is Stanford Microdevices’ high-linearity 80W LDMOS transistor designed for base station applications at or near 1000 MHz. Rated for minimum output power of 80W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power


    Original     		SL-8010 SL-8010 SL-80102 SL-80101 SLD-80102 SLD-80101 SLD-80101 SLD-80102 PDF

    n-channel dual 3010

    Abstract: CISS 3010 SL-30101 SL-3010 SL-30102 SL3010 j177 equivalent transistor
    Text: Advance Data Sheet Product Description SL-3010 The SL-3010 is Stanford Microdevices’ high-linearity 30W LDMOS transistor designed for base station applications at or near 1000 MHz. Rated for minimum output power of 30W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power


    Original     		SL-3010 SL-3010 SL-30102 SL-30101 n-channel dual 3010 CISS 3010 SL-30101 SL-30102 SL3010 j177 equivalent transistor PDF

    J027

    Abstract: No abstract text available
    Text: Advance Data Sheet Product Description SL-8010 The SL-8010 is Stanford Microdevices’ high-linearity 80W LDMOS transistor designed for base station applications at or near 1000 MHz. Rated for minimum output power of 80W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power


    Original     		SL-8010 SL-8010 SL-80101 SL-80102 SLD-80102 SLD-80101 J027 PDF

    SL-60101

    Abstract: SL-60102
    Text: Advance Data Sheet Product Description SL-6010 The SL-6010 is Stanford Microdevices’ high-linearity 60W LDMOS transistor designed for base station applications at or near 1000 MHz. Rated for minimum output power of 60W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power


    Original     		SL-6010 SL-6010 SL-60102 SL-60101 SL-60101 SL-60102 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Product Description SL-6020 The SL-6020 is Stanford Microdevices’ high-linearity 60W LDMOS transistor designed for base station applications up to 2000 MHz. Rated for minimum output power of 60W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power


    Original     		SL-6020 SL-6020 SL-60201 SL-60202 SL-60201 SL-60202 SL60201 SL60202 EDS-100943 PDF

    s 452-2

    Abstract: No abstract text available
    Text: Preliminary Product Description SL-4522 The SL-4522 is Stanford Microdevices’ high-linearity 45W LDMOS transistor designed for base station applications at or near 2200 MHz. Rated for minimum output power of 45W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power


    Original     		SL-4522 SL-4522 SL-45221 SL-45222 SL45221 SL45222 EDS-100946 s 452-2 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Product Description SL-4524 The SL-4524 is Stanford Microdevices’ high-linearity 45W LDMOS transistor designed for base station applications at or near 2400 MHz. Rated for minimum output power of 45W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power


    Original     		SL-4524 SL-4524 SL-45241 SL-45242 SL-45242 SL45241 SL45242 EDS-100948 PDF

    J464

    Abstract: SL-5020 j196 Transistor J182
    Text: Advance Data Sheet Product Description SL-5020 The SL-5020 is Stanford Microdevices’ high-linearity 50W PEP LDMOS transistor designed for base station applications up to 2000 MHz. Rated for minimum peak envelope power of 50W, it is ideal for CDMA Single or Multi-Carrier Power Amplifiers in


    Original     		SL-5020 SL-5020 SL-50201 40otal SL-50202 J464 j196 Transistor J182 PDF

    j142

    Abstract: No abstract text available
    Text: Advance Data Sheet Product Description SL-4524 The SL-4524 is Stanford Microdevices’ high-linearity 45W LDMOS transistor designed for base station applications at or near 2400 MHz. Rated for minimum output power of 45W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power


    Original     		SL-4524 SL-4524 SL-45241 SL-45242 j142 PDF

    J205

    Abstract: SL 2360 SL-25242 J380 transistor j380 J377 SL-25241 2524
    Text: Advance Data Sheet Product Description SL-2524 The SL-2524 is Stanford Microdevices’ high-linearity 25W LDMOS transistor designed for base station applications at or near 2400 MHz. Rated for minimum output power of 25W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power


    Original     		SL-2524 SL-2524 SL-25242 SL-25241 J205 SL 2360 SL-25242 J380 transistor j380 J377 SL-25241 2524 PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance Data Sheet Product Description SL-2522 The SL-2522 is Stanford Microdevices’ high-linearity 25W LDMOS transistor designed for base station applications at or near 2200 MHz. Rated for minimum output power of 25W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power


    Original     		SL-2522 SL-2522 SL-25221 SL-25222 SL-25222 PDF

    j497

    Abstract: No abstract text available
    Text: Advance Data Sheet Product Description SL-1020 The SL-1020 is Stanford Microdevices’ high-linearity 10W LDMOS transistor designed for base station applications at or near 2000 MHz. Rated for minimum output power of 10W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power


    Original     		SL-1020 SL-1020 SLD-10201 SLD-10202 SiDVB56l j497 PDF

    MOS 3020

    Abstract: 3020 transistor sl 100 transistor
    Text: Advance Data Sheet Product Description SL-3020 The SL-3020 is Stanford Microdevices’ high-linearity 30W LDMOS transistor designed for base station applications at or near 2000 MHz. Rated for minimum output power of 30W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power


    Original     		SL-3020 SL-3020 SL-30201 SL-30202 SL-30202 MOS 3020 3020 transistor sl 100 transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance Data Sheet Product Description SL-12020 The SL-12020 is Stanford Microdevices’ high-linearity 120W LDMOS transistor designed for base station applications up to 2000 MHz. Rated for minimum output power of 120W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power


    Original     		SL-12020 SL-12020 SL-120202 PDF

    j377

    Abstract: No abstract text available
    Text: Advance Data Sheet Product Description SL-2524 The SL-2524 is Stanford Microdevices’ high-linearity 25W LDMOS transistor designed for base station applications at or near 2400 MHz. Rated for minimum output power of 25W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power


    Original     		SL-2524 SL-2524 SL-25241 SL-25242 SL-25242 j377 PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance Data Sheet Product Description SL-1020 The SL-1020 is Stanford Microdevices’ high-linearity 10W LDMOS transistor designed for base station applications at or near 2000 MHz. Rated for minimum output power of 10W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power


    Original     		SL-1020 SL-1020 SLD-10201 SL-10202 SL-10201 PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance Data Sheet Product Description SL-6020 The SL-6020 is Stanford Microdevices’ high-linearity 60W LDMOS transistor designed for base station applications up to 2000 MHz. Rated for minimum output power of 60W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power


    Original     		SL-6020 SL-6020 SL-60201 SL-60202 SL-60202 PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance Data Sheet Product Description SL-4522 The SL-4522 is Stanford Microdevices’ high-linearity 45W LDMOS transistor designed for base station applications at or near 2200 MHz. Rated for minimum output power of 45W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power


    Original     		SL-4522 SL-4522 SL-45221 SL-45222 PDF

    ad2100

    Abstract: TRANSISTOR J427 SL-25221
    Text: Advance Data Sheet Product Description SL-2522 The SL-2522 is Stanford Microdevices’ high-linearity 25W LDMOS transistor designed for base station applications at or near 2200 MHz. Rated for minimum output power of 25W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power


    Original     		SL-2522 SL-2522 SL-25222 SL-25221 ad2100 TRANSISTOR J427 SL-25221 PDF