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    ON 2580 Search Results

    ON 2580 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    AV-THLIN2BNCM-025 Amphenol Cables on Demand Amphenol AV-THLIN2BNCM-025 Thin-line Coaxial Cable - BNC Male / BNC Male (SDI Compatible) 25ft Datasheet
    CN-DSUB50PIN0-000 Amphenol Cables on Demand Amphenol CN-DSUB50PIN0-000 D-Subminiature (DB50 Male D-Sub) Connector, 50-Position Pin Contacts, Solder-Cup Terminals Datasheet
    CN-DSUBHD62PN-000 Amphenol Cables on Demand Amphenol CN-DSUBHD62PN-000 High-Density D-Subminiature (HD62 Male D-Sub) Connector, 62-Position Pin Contacts, Solder-Cup Terminals Datasheet
    CO-058BNCX200-003 Amphenol Cables on Demand Amphenol CO-058BNCX200-003 BNC Male to BNC Male (RG58) 50 Ohm Coaxial Cable Assembly 3ft Datasheet
    CO-058BNCX200-050 Amphenol Cables on Demand Amphenol CO-058BNCX200-050 BNC Male to BNC Male (RG58) 50 Ohm Coaxial Cable Assembly 50ft Datasheet
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    ON 2580 Price and Stock

    TE Connectivity 2029104-3

    3P MICRO MNL HDR ASY SR SIDE N
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    Onlinecomponents.com 2029104-3 2,580
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    TE Connectivity 6326-201-19149

    Panel Nut for Circular Connectors
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    Onlinecomponents.com 6326-201-19149 2,580
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    TE Connectivity 284514-9

    9 POS TERMI-BLOK HDR DIR. POL.
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    Onlinecomponents.com 284514-9 2,580
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    TE Connectivity 3-644460-5

    05P MTA156 CONN ASSY 18AWG ORA
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    Onlinecomponents.com 3-644460-5 2,580
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    Panduit Corp EDV18-250P-Q

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com EDV18-250P-Q 2,580
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    ON 2580 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    027N10N

    Abstract: IPB027N10N3 JESD22
    Text: IPB027N10N3 G OptiMOS 3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 2.7 mΩ ID 120 A • Very low on-resistance R DS(on) • 175 °C operating temperature


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    IPB027N10N3 PG-TO263-3 027N10N 027N10N JESD22 PDF

    027N10N

    Abstract: IPB027N10N3 IEC61249-2-21 JESD22
    Text: IPB027N10N3 G OptiMOS 3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 2.7 mΩ ID 120 A • Very low on-resistance R DS(on) • 175 °C operating temperature


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    IPB027N10N3 IEC61249-2-21 PG-TO263-3 027N10N 027N10N IEC61249-2-21 JESD22 PDF

    030N10N

    Abstract: IPP030N10N
    Text: IPP030N10N3 G OptiMOS 3 Power-Transistor IPI030N10N3 G Product Summary Features VDS • N-channel, normal level 100 RDS on ,max • Excellent gate charge x R DS(on) product (FOM) V 3 ID mW 100 A • Very low on-resistance R DS(on) • 175 °C operating temperature


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    IPP030N10N3 IPI030N10N3 PG-TO220-3 030N10N PG-TO262-3 030N10N IPP030N10N PDF

    025n10n

    Abstract: IPB025N10N3 IPB025N10N3 G IEC61249-2-21 JESD22
    Text: IPB025N10N3 G OptiMOS 3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 2.5 mΩ ID 180 A • Extremely low on-resistance R DS(on) • High current capability


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    IPB025N10N3 IEC61249-2-21 PG-TO263-7 025N10N 025n10n IPB025N10N3 G IEC61249-2-21 JESD22 PDF

    025N10N

    Abstract: IPB025N10N3 IPB025N10N3 G JESD22
    Text: IPB025N10N3 G OptiMOS 3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 2.5 mΩ ID 180 A • Extremely low on-resistance R DS(on) • High current capability


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    IPB025N10N3 PG-TO263-7 025N10N 025N10N IPB025N10N3 G JESD22 PDF

    Untitled

    Abstract: No abstract text available
    Text: CYONS2001 OvationONS IIII OvationONS™ WirelessLaser LaserNavigation NavigationSystem-on-Chip System-on-Chip Wireless Features • Description Programmable blocks ❐ Highly integrated wireless mouse-on-a-chip with programmable PSoC microcontroller unit MCU


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    CYONS2001 CYONS2001 13-micron PDF

    Untitled

    Abstract: No abstract text available
    Text: CYONS2001 OvationONS IIII OvationONS™ WirelessLaser LaserNavigation NavigationSystem-on-Chip System-on-Chip Wireless Features • Description Programmable blocks ❐ Highly integrated wireless mouse-on-a-chip with programmable PSoC microcontroller unit MCU


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    CYONS2001 32-kHz 16-bit PDF

    Untitled

    Abstract: No abstract text available
    Text: CYONS2001 OvationONS IIII OvationONS™ WirelessLaser LaserNavigation NavigationSystem-on-Chip System-on-Chip Wireless Features • Description Programmable blocks ❐ Highly integrated wireless mouse-on-a-chip with programmable PSoC microcontroller unit MCU


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    CYONS2001 PDF

    030N10N

    Abstract: IPP030N10N3 JESD22 PG-TO220-3 IPP030N10N3 G DSV80
    Text: IPP030N10N3 G OptiMOS 3 Power-Transistor IPI030N10N3 G Product Summary Features V DS • N-channel, normal level 100 R DS on ,max • Excellent gate charge x R DS(on) product (FOM) V 3 ID mΩ 100 A • Very low on-resistance R DS(on) • 175 °C operating temperature


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    IPP030N10N3 IPI030N10N3 PG-TO220-3 PG-TO262-3 030N10N 10gerous 030N10N JESD22 PG-TO220-3 IPP030N10N3 G DSV80 PDF

    Untitled

    Abstract: No abstract text available
    Text: IPA030N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features VDS • N-channel, normal level • Excellent gate charge x R DS on product (FOM) 100 V RDS(on),max 3 mW ID 79 A • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant


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    IPA030N10N3 IEC61249-2-21 PG-TO220-FP 030N10N PDF

    Untitled

    Abstract: No abstract text available
    Text: LITE-ON TECHNOLOGY CORPORATION Property of Lite-On Only Features * * * * * * Package in 8mm tape on 7" diameter reels. Compatible with automatic placement equipment. Compatible with infrared and vapor phase reflow solder process. EIA STD package. I.C. compatible.


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    LTW-M670ZVS-A25 BNS-OD-C131/A4 EIA-471 PDF

    Untitled

    Abstract: No abstract text available
    Text: LITE-ON TECHNOLOGY CORPORATION Property of Lite-On Only Features * * * * * * Package in 8mm tape on 7" diameter reels. Compatible with automatic placement equipment. Compatible with infrared and vapor phase reflow solder process. EIA STD package. I.C. compatible.


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    LTW-M140ZVS-AV91 BNS-OD-C131/A4 EIA-471 PDF

    IPA030N10N3 G

    Abstract: JESD22 75V10 DD-50 030n10n
    Text: IPA030N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features V DS • N-channel, normal level • Excellent gate charge x R DS on product (FOM) 100 V R DS(on),max 3 mΩ ID 79 A • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant


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    IPA030N10N3 PG-TO220-FP 030N10N IPA030N10N3 G JESD22 75V10 DD-50 030n10n PDF

    LR33434

    Abstract: VTM-1 E6036
    Text: Cube Timers – Series VTM1 On-Delay Timing Modules DESIGN FEATURES ♦ On-Delay operating mode ♦ Reliable solid state timing circuitry ♦ Excellent transient protection ♦ Compact design ♦ Flame-retardant, solvent-resistant housing SPECIFICATIONS Operating Mode: On-Delay


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    120VAC/DC 24VAC/DC 12VAC/DC -40oF E60363 LR33434 LR33434 VTM-1 E6036 PDF

    STR W 5753 a

    Abstract: LA 42072 str w 5753 str 5753 STR S 5741 uc 8343 hai 7358 PA 0016 PIONEER Str W 5754 STR G 6352
    Text: VISHAY I N T E R T E C H N O L O G Y , I N C . INTERACTIVE data book LEADED SOLID ELECTROLYTE TANTALEX CAPACITORS vishay vse-db0029-0805 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents


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    vse-db0029-0805 STR W 5753 a LA 42072 str w 5753 str 5753 STR S 5741 uc 8343 hai 7358 PA 0016 PIONEER Str W 5754 STR G 6352 PDF

    7 Segment sm 42056

    Abstract: sm 42056 7 segment display sm 42056 Roederstein EK roederstein capacitor ek series Vishay Roederstein EKM en13003 Roederstein EKm 7 Segment common cathode Vishay Roederstein EBR
    Text: VISHAY I N T E R T E C H N O L O G Y , I N C . INTERACTIVE data book smd­ • radial • A xial Aluminum capacitors vishay vse-db0111-0810 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents


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    vse-db0111-0810 7 Segment sm 42056 sm 42056 7 segment display sm 42056 Roederstein EK roederstein capacitor ek series Vishay Roederstein EKM en13003 Roederstein EKm 7 Segment common cathode Vishay Roederstein EBR PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2725UT1A SWITCHING N-CHANNEL POWER MOSFET PACKAGE DRAWING Unit: mm 1 7 • Low on-state resistance 3 6 4 5 +0.1 0.42 −0.05 RDS(on)1 = 5.0 mΩ MAX. (VGS = 10 V, ID = 13 A) RDS(on)2 = 7.5 mΩ MAX. (VGS = 4.5 V, ID = 13 A)


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    PA2725UT1A PA2725UT1A PDF

    Untitled

    Abstract: No abstract text available
    Text: P-CONN TM SCREW-ON WIRE CONNECTORS Table of Contents P-CONN SIDEWINDER ™ Screw-on Wire Connectors Hex Style Features and benefits . Page 2 Wire ranges and capacities . Page 3


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    SA101N146D-NL PDF

    CXB1103QY

    Abstract: Oscilloscope ADC schematic 1GHz 1795 40pin 100S351 MAX1150 MAX1150AIZS MAX1151 MAX1151AIZS MAX1151EVKIT SY100S351
    Text: 19-1199; Rev 0; 3/97 MAX1150/MAX1151 Evaluation Kit _Features ♦ 750Msps Maximum Conversion Rate MAX1151 ♦ On-Board Reconstruction DAC ♦ On-Board Reference Circuit ♦ Full-Speed Digital Output Through a High-Speed Connector


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    MAX1150/MAX1151 750Msps MAX1151) Divide-by-32/64/128 MAX1150AIZS MAX1151AIZS 80-pin, 750Msps. CXB1103QY Oscilloscope ADC schematic 1GHz 1795 40pin 100S351 MAX1150 MAX1151 MAX1151EVKIT SY100S351 PDF

    Untitled

    Abstract: No abstract text available
    Text: FDS86140 N-Channel PowerTrench MOSFET 100 V, 11.2 A, 9.8 mΩ Features General Description ̈ Max rDS on = 9.8 mΩ at VGS = 10 V, ID = 11.2 A This ̈ Max rDS(on) = 16 mΩ at VGS = 6 V, ID = 9 A Semiconductor‘s advanced Power Trench® process that has ̈ High performance trench technologh for extremely low rDS(on)


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    FDS86140 PDF

    Untitled

    Abstract: No abstract text available
    Text: FDS86140 N-Channel PowerTrench MOSFET 100 V, 11.2 A, 9.8 mΩ Features General Description „ Max rDS on = 9.8 mΩ at VGS = 10 V, ID = 11.2 A This „ Max rDS(on) = 16 mΩ at VGS = 6 V, ID = 9 A Semiconductor‘s advanced Power Trench® process that has „ High performance trench technologh for extremely low rDS(on)


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    FDS86140 FDS86140 PDF

    elna re3

    Abstract: RJ4 Elna 35222M re3 elna 35V222
    Text: MINIATURE ALUMINUM ELECTROLYTIC CAPACITORS RE3 Standard Capacitors Series RE3 • Guaranteed 2000 hours at 85˚C. RJ4 High temperature RE3 Marking color : White print on a blue sleeve or White print on an indigo blue sleeve Specifications Item Performance


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    120Hz) 16x25 16x31 16x35 18x31 elna re3 RJ4 Elna 35222M re3 elna 35V222 PDF

    C5101-1

    Abstract: No abstract text available
    Text: MINIATURE ALUMINUM ELECTROLYTIC CAPACITORS RE3 Standard Capacitors Series RE3 • Guaranteed 2000 hours at 85˚C. RJ4 High temperature RE3 Marking color : White print on a blue sleeve or White print on an indigo blue sleeve Specifications Item Performance


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    120Hz) 16x35 16x25 18x31 18x35 16x31 120Hz C5101-1 PDF

    wireless mouse circuit diagram power boost

    Abstract: encoder optic wheel mouse sensor multiple Touch capacitive Sensor cypress optic wheel mouse sensor optic mouse sensor
    Text: CYONS2110 OvationONS II Wired/Wireless Laser Navigation System-on-Chip Features • Description Programmable blocks ❐ Highly integrated mouse-on-a-chip with programmable PSoC microcontroller unit MCU ❐ 32 KB flash memory ❐ 2 KB static RAM (SRAM)


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    CYONS2110 CYONS2110 13-micron wireless mouse circuit diagram power boost encoder optic wheel mouse sensor multiple Touch capacitive Sensor cypress optic wheel mouse sensor optic mouse sensor PDF