TRANSISTOR 187
Abstract: transistor b 1655 transistor on 4673 D 1062 transistor on BE 187 TRANSISTOR BE 187 TRANSISTOR ON 4673 187 transistor configuration+bel+187+transistor TRANSISTOR d 718
Text: TRANSISTOR MICA INSULATORS ke ye lco .com • RAPID HEAT DISSIPATION • HIGH DIELECTRIC STRENGTH • NON-TOXIC • LOW COST • FROM STOCK These precision stamped mica insulators provide good thermal conductivity .009 watts per square inch per degree celsius per inch in
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CIL TRANSISTOR 188
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS CIL 187 TO-92 Plastic Package Intended For Low Voltage , High Current Output Pair Application Complementary CIL 188 ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise
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C-120
CIL187
Rev060901
CIL TRANSISTOR 188
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CIL TRANSISTOR 188
Abstract: CIL TRANSISTOR 187 CIL TRANSISTOR 331 CIL187 CIL188
Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR EPITAXIAL TRANSISTORS CIL 187 TO-92 Plastic Package Intended For Low Voltage , High Current Output Pair Application Complementary CIL 188
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C-120
CIL187
Rev060901
CIL TRANSISTOR 188
CIL TRANSISTOR 187
CIL TRANSISTOR 331
CIL188
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CIL TRANSISTOR 188
Abstract: CIL TRANSISTOR 187 CIL188 CIL TRANSISTOR 331 CIL187 CIL TRANSISTOR CIL 331 transistor a 92 a 331
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS CIL 187 TO-92 Plastic Package Intended For Low Voltage , High Current Output Pair Application Complementary CIL 188 ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise
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C-120
CIL187
Rev060901
CIL TRANSISTOR 188
CIL TRANSISTOR 187
CIL188
CIL TRANSISTOR 331
CIL TRANSISTOR
CIL 331
transistor a 92 a 331
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Untitled
Abstract: No abstract text available
Text: M60 Section 6 FREV2 11/23/11 12:09 PM Page 110 SOCKETS FOR T0-5 & TO-100 “MINI” HALOGEN LAMP SOCKETS Fully molded compact construction. Speeds transistor assembly. Incorporates ultra high quality, closed entry, sleeve type contacts. Accepts .016 .41 to .020 (.51) diameter
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O-100
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BUK7628-100A
Abstract: BUK7528-100A
Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope available in TO220AB and SOT404 . Using ’trench’ technology which
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O220AB
OT404
BUK7528-100A
BUK7628-100A
O220AB
BUK7628-100A
BUK7528-100A
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NEC JAPAN 282 110 01
Abstract: NEC 2561 TYP 513 309 2SC4570 2SC4570-T1 2SC4570-T2 date sheet ic 7483 marking 929 922 nec 5261
Text: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC4570 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC4570 is a low supply voltage transistor designed for UHF OSC/MIX. 2.1±0.1 It is suitable for a high density surface mount assembly since the
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2SC4570
2SC4570
SC-70)
2SC4570-T1
NEC JAPAN 282 110 01
NEC 2561
TYP 513 309
2SC4570-T1
2SC4570-T2
date sheet ic 7483
marking 929 922
nec 5261
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ic 7483 pin configuration
Abstract: T 427 transistor TYP 513 309 2SC4570 ts 1683 nec 5261
Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR µPA803T NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD µPA803T has built-in 2 transistors which were developed for UHF. PACKAGE DRAWINGS (Unit: mm) FEATURES 2.1±0.1 • High fT 1.25±0.1 6
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PA803T
PA803T
PA803T-T1
2SC4570)
ic 7483 pin configuration
T 427 transistor
TYP 513 309
2SC4570
ts 1683
nec 5261
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ILD4120
Abstract: No abstract text available
Text: LED Drivers for High Power LEDs ILD4120 1200 mA Step Down LED Driver Data Sheet Revision 6.0, 2011-10-10 Industrial and Multimarket Edition 2011-10-10 Published by Infineon Technologies AG 81726 Munich, Germany 2011 Infineon Technologies AG All Rights Reserved.
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ILD4120
MS-012
PG-DSO-8-27-FP
PG-DSO-8-27-TP
PG-DSO-8-27-PO
ILD4120
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Untitled
Abstract: No abstract text available
Text: LED Drivers for High Power LEDs ILD4120 1200 mA Step Down LED Driver Data Sheet Revision 5.0, 2011-08-23 Preliminary Industrial and Multimarket Edition 2011-08-23 Published by Infineon Technologies AG 81726 Munich, Germany 2011 Infineon Technologies AG
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ILD4120
MS-012
PG-DSO-8-27-PO
PG-DSO-8-27-FP
PG-DSO-8-27-TP
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BUK9506-30
Abstract: No abstract text available
Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has
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O220AB
BUK9506-30
BUK9506-30
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BUK9508-55
Abstract: BUK9608-55
Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting Using ’trench’ technology
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OT404
BUK9608-55
BUK9508-55
BUK9608-55
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BUK9508-55
Abstract: No abstract text available
Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has
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O220AB
BUK9508-55
BUK9508-55
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BUK7508-55
Abstract: BUK7608-55
Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device
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OT404
BUK7608-55
BUK7508-55
BUK7608-55
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transistor BUK9508
Abstract: BUK9508-55 BUK950
Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has
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O220AB
BUK9508-55
transistor BUK9508
BUK9508-55
BUK950
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BUK9506-30
Abstract: BUK9606-30 BUK950
Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting using ’trench’ technology.
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OT404
BUK9606-30
BUK9506-30
BUK9606-30
BUK950
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BUK9506-30
Abstract: PHB130N03LT
Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting using ’trench’ technology.
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OT404
PHB130N03LT
BUK9506-30
PHB130N03LT
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DG180-191
Abstract: No abstract text available
Text: DG180-191 fffl HARRIS S E M I C O N D U C T O R High-Speed Driver With JFET Switch GENERAL DESCRIPTION FEATURES The DG180 thru DG191 series of analog gates consist of 2 or 4 N-channel junction-type field-effect transistors JFET designed to function as electronic switches. Level-shifting
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DG180-191
DG182,
150ns
10MHz
DG180
DG191
DG186/187/188
DG189/190/191
DG189/190/191
DG180-191
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OG191
Abstract: No abstract text available
Text: 43E D HARRIS SEMICOND SECTOR 4302271 GOB.bbflS 1 Hi HAS £B H A R R I S V A / D G 1 8 0 -1 9 1 S E M I C O N D U C T O R High-Speed Driver With JFET Switch GENERAL DESCRIPTION FEATURES The DG180 thru DG191 series of analog gates consist of 2 or 4 N-channei junction-type field-effect transistors JFET
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OCR Scan
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DG182,
150ns,
10MHr
14-PIN
DG186/187/188
DG189/190/191
OG191
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G-184
Abstract: No abstract text available
Text: S E M I C O N D U C T O R High-Speed Driver With JFET Switch GENERAL DESCRIPTION FEATURES The D G 180 thru D G 191 series o f analog gates co nsist of 2 or 4 N -channel junction-type fie ld -e ffe ct transistors JFET designed to function as ele ctro n ic sw itches. Level-shifting
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OCR Scan
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150ns,
10-PIN
14-PIN
DG186/187/188
DG189/190/191
G-184
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RU 7511
Abstract: circuit diagram for je 182 g
Text: DG180-191 HARRIS !Z * c ° "r.;.0.,! High-Speed Driver With JFET Switch GENERAL DESCRIPTION FEATURES The OG1SO thru DG191 series of analog gates consist of 2 or 4 N-channel junction-type field-effect transistors JFET designed to function as electronic switches. Level-shifting
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DG180-191
DG182,
150ns,
10MHz
10-PIN
14-PIN
DG191
DPST-DG183/184/185
SPDT-DG186/187/188
DG186/187/188
RU 7511
circuit diagram for je 182 g
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55D8
Abstract: circuit diagram for je 182 g DG181 DG180 DG180-191 DG182 DG183 DG184 DG185 DG186
Text: Intersil Hlgh-Rellabllity Products DG180-191 U High Reltfnnfy High-Speed Driver qV ^ With JFET Switch GENERAL DESCRIPTION FEATURES The DG180 thru DG191 series of analoggates consist of 2 or 4 N-channel junction-type field-effect transistors JFET) designed to function as electronic switches. Level-shifting
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OCR Scan
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DG180-191
DG180
DG191
10MHz,
SPDT-DG186/187/188
DG186/187/188
DPST-DG183/184/185
DG183/184/185
DG189/190/191
55D8
circuit diagram for je 182 g
DG181
DG180-191
DG182
DG183
DG184
DG185
DG186
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CT 1975 sam
Abstract: transistor NEC D 588 NEC 2561 LE 401 zo 607 p 408 NEC 2561 de nec 2561 Q 634 date sheet ic 7483 C4570 CT 1975 - sam T72 marking
Text: DATA SHEET SILICON TRANSISTOR 2SC4570 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION T h e 2S C 4 5 7 0 is a low su p p ly vo lta g e tra n sisto r de sig n e d for UHF PACKAGE DIMENSIONS Units: mm O S C /M IX . 2.1 ±0.1 It is su ita b le fo r a high d e n sity surface m ount asse m bly sin ce the
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2SC4570
2SC4570-T1
CT 1975 sam
transistor NEC D 588
NEC 2561 LE 401
zo 607 p 408
NEC 2561 de
nec 2561 Q 634
date sheet ic 7483
C4570
CT 1975 - sam
T72 marking
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FES100
Abstract: No abstract text available
Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’tre n c h ’ technology. The device features very
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OCR Scan
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BUK9506-30
-T0220A
FES100
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