UZ210
Abstract: P1275
Text: TOSHIBA MOS MEMORY PRODUCTS TMM27512ADI-20, TMM27512ADI-25 DESCRIPTION The TMM27512ADI is a 65,536 words * 8 bits ultraviolet light erasable and electri cally programmable read only memory. For read operation, the TMM27512ADI's access time is 200ns/250ns, and the TMM27512ADI
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TMM27512ADI-20,
TMM27512ADI-25
TMM27512ADI
200ns/250ns,
200ns
130mA
TMM27512ADI.
UZ210
P1275
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Untitled
Abstract: No abstract text available
Text: TMS28C64 65,536-BIT ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY • Organization 8K x 8 • Single 5-V Power Supply ± 10% N AND J PACKAGES (TOP VIEW } Q 1 U A 12C 2 A7C 3 Compatible with Existing 64K M O S EPRO M s. PRO M s. R O M s, and EEPR O M s
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TMS28C64
536-BIT
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54256AP
Abstract: TC54256AF 54256a TC54256P 54256AF tmm23256p 27256D tc54256ap
Text: TOSHIBA TC54256AP/AF SILICON STACKED GATE CMOS 32,768 WORD x 8 BIT ONE TIME PROGRAMMABLE READ ONLY MEMORY D e s c rip tio n The TC54256AP/AF is a 32,768 word x 8 bit one time programm able read only m em or/ m olded in a 28-pin plastic package. The TC54256AP/AF’s access time is 200ns and it has a low power standby m ode which reduces the power dissipation without
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TC54256AP/AF
TC54256AP/AF
28-pin
200ns
TC57256AD
TC54256AP/AF.
54256AP
TC54256AF
54256a
TC54256P
54256AF
tmm23256p
27256D
tc54256ap
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A1051
Abstract: No abstract text available
Text: TMS27C291, TMS27C292 16.384-BIT UV ERASABLE PROGRAMMABLE READ-ONLY MEMORIES TMS27PC291 16,384-BIT PROGRAMMABLE READ-ONLY MEMORY SEPTEM BER 1986 —REVISED APRIL 1988 Organization . . . 2K x 8 J AND N PA C KA G E Pin Compatible with Existing 2K x 8 Bipolar/High-Speed CM OS EPROMs
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TMS27C291,
TMS27C292
384-BIT
TMS27PC291
27C/PC291-3
27C/PC291
27C/PC291-5
27C/PC291-35
27C/PC291-45
A1051
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PDF
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27C020-12
Abstract: 27PC020-12 LS020 A1025 LS020B 2097152-BIT
Text: TMS27C020 2097152-BIT UV ERASABLE PROGRAMMABLE TMS27PC020 2097152-BIT PROGRAMMABLE READ-ONLY MEMORY SM LS020B - N O V E M B E R 1990 - REVISED JU N E 1995 • Organization . . . 256K x 8 J PACKAGE TOP VIEW • Single 5-V Power Supply • Operationally Compatible With Existing
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TMS27C020
2097152-BIT
TMS27PC020
LS020B
32-Pln
32-Lead
27C/PC020-12
27C/PC020-15
27C/PC020-20
27C020-12
27PC020-12
LS020
A1025
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC58V64FT/DC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64-MBIT 8M X 8 BITS CMOS NAND E2PROM DESCRIPTION The TC58V64FT/DC is a single 3.3-V 64-Mbit (69,206,016-bit) NAND electrically erasable and programmable read-only memory (NAND E2PROM) organized as 528 bytes X 16 pages X 1024 blocks.
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TC58V64FT/DC
64-MBIT
TC58V64FT/DC
016-bit)
528-byte
44/40-P-400-0
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Untitled
Abstract: No abstract text available
Text: SILICON STACKED GATE MOS INTEGRATED CIRCUIT - TC57256AD-12,-120,-150 32 , 768 W O R D x 8 B I T C M O S UV ERASABLE A N D ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY IDESCRIPTIONI The TC57256AD is a 32,768 word x 8 bit CMOS ultraviolet light erasable and electri
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TC57256AD-12
TC57256AD
120ns,
30mA/8
TC57256AD.
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TC5316200bP
Abstract: TC5316200BP/BF
Text: TOSHIBA TC5316200BP/BF SILICON STACKED GATE CMOS 1,048,576 WORD x 16 BIT/2,097,152 WORD x 8 BIT CMOS MASK ROM D escription The TC5316200BP/BF is a 16,777,216 bit read only memory organized as 1,048,576 words by 16 bits when BY I t is logical high, and organized as 2,097,152 words by 8 bits when BYTE is logical low.
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TC5316200BP/BF
TC5316200BP/BF
600mil
42-pin
44-pin
TC5316200BP
TC5316200BF
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PDF
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Untitled
Abstract: No abstract text available
Text: TC4SU11F 2 INPUT NAND GATE TC4SU11F is 2 input NAND gate respectively. The internal circuit o f only basic NAND circuit w ith o u t th e w ave fo rm shaping inverter. T herefore, this is suitable for th e applications in liner circuits such as oscillator circuits and am plifier circuits,
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TC4SU11F
TC4SU11F
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TC57256AD
Abstract: No abstract text available
Text: TOSHIBA TC57256AD-12 TC57256AD-120 TC57256AD-150 SILICON STACKED GATE CMOS 32,768 WORD x 8 BIT CMOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY Description The TC57256AD is a 32,768 word x 8 bit CMOS ultraviolet light erasable and electrically programmable read only memory. It
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TC57256AD-12
TC57256AD-120
TC57256AD-150
TC57256AD
30mA/8
TC57256AD.
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character generater
Abstract: No abstract text available
Text: 4M BIT 256K W O RD x 16 B IT / 512K W O R D x 8BIT CM OS M ASK ROM DESCRIPTION The BYTE The The TC534200P/F is a 4,194,304 bits read only memory organized as 262,144 words by 16 bits when is logical high, and is organized as 524,288 words by 8 bits when BYTE is logical low.
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TC534200P/F
600mil
40pin
525mil
150ns
20/uA
TC534200P
TC534200P/F--
character generater
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PDF
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27C510
Abstract: pc51020 SMJ27C510 pc510-20
Text: TMS27C510 524 288-BIT ERASABLE PROGRAMMABLE READ-ONLY MEMORY TMS27PC510 524 288-BIT PROGRAMMABLE READ-ONLY MEMORY SMLS51OA-AUGUST 1990-REVISED JANUARY 1993 J AND N PACKAGESÎ TOP VIEW Organization . . . 64K x 8 Single 5-V Power Supply V pp [ Pin Compatible With Existing 1 Meg MOS
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TMS27C510
288-BIT
TMS27PC510
SMLS51OA-AUGUST
1990-REVISED
27C510-12
27C/PC510-15
27C/PC510-17
27C/PC510-20
27C510
pc51020
SMJ27C510
pc510-20
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PDF
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27C512-3
Abstract: 27c512-45 TG-14 27C512 27C512-2
Text: TEXAS "Ô 961725 INSTR TEX A S {ASIC/MENORY} INS TR PRODUCT PREVIEW 77 d e A S IC /M EM O R V T 0 ^ 1 7 5 5 77C 4 0 9 33 G D Ll ü li 3 3 D TMX27C512 524,288-BIT ERASABLE PROGRAM M ABLE READ ONLY M EM O RY N O V E M B E R 1965 J PACKAGE Organization . . . 64K x 8
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TMX27C512
288-BIT
27C512-2,
27C512-20
27C512,
27C512-25
27C512-3,
27C512-4,
27C512-45
27C512-3
TG-14
27C512
27C512-2
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TCD131D
Abstract: TC74HC04P 2SA1015-Y 2SA1015 Y
Text: C D 1 3 1 D The TCD131D is a high resolution and high sensitivity 2048-element linear image sensor. The device can be used foi OCR» POS handscanner bar-code type , and other optical measurements. The device is operated by only 12V power supply. The device is mounted in 22-pin Cerdip package
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TCD131D
2048-element
22-pin
200ym
TCD131D
TC74HC04P
2SA1015-Y
2SA1015 Y
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A18D0
Abstract: TC534000AP
Text: Slsllllf I I I ! llllll ¡11 4M BIT 512K W O R D x 8 B IT CMOS MASK ROM DESCRIPTION The TC534000AP/AF is a 4,194,304 bits read only memory organized as 524,288words by 8bits. The TC534000AP / AF is fabricated using Toshiba’s advanced CMOS technology which provides the
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TC534000AP/AF
288words
TC534000AP
150ns,
TC534000AP/
600mil
32pin
525mil
A18D0
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PDF
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44460D
Abstract: BK36C-80
Text: TM124MBK36C, TM124MBK36S1048576 BY 36-BIT TM248NBK36C, TM248NBK36S 2097152 BY 36-BIT DYNAMIC RAM MODULE SMMS138B - MARCH 1992 - REVISED JUNE 199S Enhanced Page Mode Operation With CAS-Before-RAS CBR , RAS-Only, and Hidden Refresh Presence Detect Performance Ranges:
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TM124MBK36C,
TM124MBK36S1048576
36-BIT
TM248NBK36C,
TM248NBK36S
SMMS138B
TM124MBK36C
TM248NBK36C
72-pln
44460D
BK36C-80
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Untitled
Abstract: No abstract text available
Text: SMJ27C010 1,048,576-BIT UV ERASABLE PROGRAMMABLE READ-ONLY MEMORY M A R C H 1 9 8 8 — R E V IS E D J U L Y 1 9 8 8 • Organization . . . 128K x 8 J PACKAGE • Single 5-V Power Supply TOP VIEW • Industry Standard 32-Pin Dual-ln-llne Package • All Inputs/Outputs Fully TTL Compatible
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SMJ27C010
576-BIT
32-Pin
32-Bit
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PDF
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Untitled
Abstract: No abstract text available
Text: TMS27C020 2 097152 BIT UV ERASABLE PROGRAMMABLE READ-ONLY MEMORY TMS27PC020 2 097152 BIT PROGRAMMABLE READ-ONLY MEMORY SMLSO 2 O A-N OVEM BER 18 9 0 -R E V IS E P JANUARY 1993 x J PACKAGEt TOP VIEW 8 Single 5-V Power Supply Vpp[ Operationally Compatible With Existing
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TMS27C020
TMS27PC020
32-Pin
32-Lead
27C/PC020-12
27C/PC020-15
27C/PC020-20
27C/PC020-25
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PDF
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TC531621
Abstract: No abstract text available
Text: TOSHIBA TC5316210CP/CF PRELIMINARY SILICON STACKED GATE CMOS 1,048,576 WORD x 16 BIT/2,097,152 WORD x 8 BIT CMOS MASK ROM Description TheTC 5316210C P/C F is a 16,777,216 bit read only m em ory organized as 1,048,576 w ords by 16 bits when BYTE is logical
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TC5316210CP/CF
5316210C
TC5316210CP/CF
5316210CP/CF
600mil
42-pin
44-pin
TC531621OCP/CF
TC531621
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PDF
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TC5716200D-150
Abstract: 5716200D
Text: TOSHIBA TC5716200D-150, -200 SILICON STACKED GATE CMOS 1,048,576 WORD x 16 BIT/2,097,152 WORD x 8 BIT CMOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY D escription T heT C 5716200D is a 16,777,216 bit CMOS ultraviolet light erasable and electrically programmable read only memory. It is
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TC5716200D-150,
5716200D
TC5716200D
42-pin
150ns/200ns
60rrvV6
5716200D
TC5716200D.
TC5716200D-150
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PDF
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Untitled
Abstract: No abstract text available
Text: TMS47128 16,384-WORD BY 8-BIT READ-ONLY MEMORY JU N E 1 9 8 3 - N PACKAGE 1 6 ,3 8 4 X 8 Organization TOP VIEW Fully Static (No Clocks, No Refresh) NC £ 1 All Inputs and Outputs TTL Compatible 2 8 3 V CC 2 7 3 S 2 /S 2 A 12 £ 2 A 7C 3 Single 5-V Power Supply
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TMS47128
384-WORD
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TMS47C256 ROM
Abstract: No abstract text available
Text: TE XA S INS TR -CASIC/NEHORY} 77 ADVANCE INFORMATION 0^1725 DE 0040=107 4 | ~ TMS47C256 32,768-WORD BY 8-BIT READ-ONLY M EM O RY NOVEMBER 1985 N PACKAGE • 32,768 X 8 Organization • Fully Static No Clocks, No Refresh • All Inputs and Outputs TTL Compatible
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TMS47C256
768-WORD
TMS47C256 ROM
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PDF
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Untitled
Abstract: No abstract text available
Text: UCC3916 y UNITRODE SCSI Termpower Manager FEATURES DESCRIPTION • Integrated Circuit Breaker Function The UCC3916 SCSI termpower manager provides complete power man agement, hot swap capability, and circuit breaker functions with minimal ex ternal components. For most applications, the only external component
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UCC3916
UCC3916
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Untitled
Abstract: No abstract text available
Text: INTEGRATED TOSHIBA CIRCUIT TECHNICAL DATA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC58A040 F SILICON GATE CMOS 4 MBIT 4 M X 1 BITS CMOS AUDIO NAND E2PROM TENTATIVE DATA DESCRIPTION The TC58A040 is a 5-volt 4 Mbit NAND Electrically Erasable and Programmable Read Only Memory
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TC58A040
256-bit
TC58A040F--29
OP28-P-450
TC58A040F--
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