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    OPE55 Search Results

    OPE55 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    OPE5585 Unknown High Speed GaAlAs Infrared Emitter Original PDF
    OPE5587 Unknown High Speed GaAlAs Infrared Emitter Original PDF
    OPE5594A Roithner-Laser GaAs Infrared Emitter Original PDF
    OPE5594S Roithner-Laser HIGH POWER IR-LED Original PDF

    OPE55 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    OPE5594S

    Abstract: ope5594
    Text: ROITHNER LASERTECHNIK A-1040 WIEN, FLEISCHMANNGASSE 9 TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43 e-mail: [email protected] http://www.roithner.mcb.at OPE5594S TECHNICAL DATA HIGH POWER IR-LED Technology: GaAlAs Peak Wavelength: 940 nm typ. Radiant Intensity: 120 mW/sr


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    OPE5594S OPE5594S ope5594 PDF

    OPE5594S

    Abstract: No abstract text available
    Text: GaAlAs Infrared Emitter C OPE5594S DIMENSIONS Unit:mm 5.7 24.0 Min 2- 8.7 7.7 1.3 Max FEATURESC • High-output powerC • Medium beam angle • High reliability and long term stability • Available for pulse operating 5.0 The OPE5594S is GaAlAs infrared emitting diode


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    OPE5594S OPE5594S 940nm 100mA PDF

    OPE5594A

    Abstract: ope5594 OPE5594s smoke Sensors
    Text: GaAs Infrared Emitter C OPE5594A 8.7 7.7 24.0 Min 1.3 Max FEATURESC • High-output powerC • Narrow beam angle • High reliability and long term stability • Available for pulse operating C APPLICATIONSC • Optical emitters • Optical switches • Smoke sensors


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    OPE5594A OPE5594S 940nm OPE5594A ope5594 smoke Sensors PDF

    OPE5585

    Abstract: No abstract text available
    Text: High Speed GaAlAs Infrared Emitter OPE5585 DIMENSIONS Unit : mm 5.7 5.0 7.7 2- 24.0 Min 1.3 Max FEATURES • High speed : 25ns rise time • 850nm wavelength • Narrow beam angle • Low forward voltage • High power and high reliability • Available for pulse operating


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    OPE5585 850nm OPE5585 PDF

    OPE5587

    Abstract: Infrared emitter 880NM
    Text: High Speed GaAlAs Infrared Emitter C OPE5587 C The OPE5587 is GaAlAs infrared emitting diode that is designed for high power, low forward voltage and high speed rise / fall time. This device is optimized for speed and efficiency at emission wavelength 880nm and has a high radiant


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    OPE5587 OPE5587 880nm Infrared emitter PDF

    ope5594

    Abstract: OPE5594S remote control ir
    Text: 5294WK http://www.optel.co.kr/html/5phi/OPE5594s.html The OPE5594S is GaAlAs infrared emitting diode that is designed for high reliability, high radiant intensity and DIMENSIONS Unit:mm low forward voltage . This device is optimized for efficiency at emission


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    5294WK kr/html/5phi/OPE5594s OPE5594S 940nm 100mA ope5594 remote control ir PDF

    mdd 2605

    Abstract: HCPL 1458 8 pin opto KS0108 128X64 graphical LCD mdd 2601 transistor chn 952 hitachi INVC 618 Data Vision P135 H4 led smd headlight bulb transistor CHN 64 946 transistor chn 943
    Text: 755 Technical portal and online community for Design Engineers - www.element-14.com Optoelectronics, Solid State Illumination & Displays Page Alphanumeric LCD Modules . . . . . . . . . . . . . . . . . 903 Alphanumeric LED Displays . . . . . . . . . . . . . . . . . 900


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    element-14 element14 mdd 2605 HCPL 1458 8 pin opto KS0108 128X64 graphical LCD mdd 2601 transistor chn 952 hitachi INVC 618 Data Vision P135 H4 led smd headlight bulb transistor CHN 64 946 transistor chn 943 PDF

    smd diode UJ 64 A

    Abstract: SLD3237VFR 20/SPL1550-10-9-PD SLD3237VF smd diode UM 08 smd diode UM RLCD-M66H-750 RLT905-30G SLD3236VF RLT6650GLI
    Text: PRICE LIST 03/2015 Wiedner Hauptstrasse 76, Vienna, Austria EUR USD Tel: +43-1-586 52 430, Fax: +43-1-586 52 43 44 1,00 1,10182 [email protected], www.roithner-laser.com 2015-06-03 last update 2015-06-03 LASER DIODES - UV EUR USD 1-9 pcs. 1-9 pcs.


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    RLU4116E, RLT390-50CMG, RLT395-50CMG, RLT400-50CMG, TH06-1W, ATU61938489, AT1212 AT3112 smd diode UJ 64 A SLD3237VFR 20/SPL1550-10-9-PD SLD3237VF smd diode UM 08 smd diode UM RLCD-M66H-750 RLT905-30G SLD3236VF RLT6650GLI PDF