HCPL 601
Abstract: jedec package standards so8 cenelec IEC 1010-1 General Safety Requirements Optocoupler 601 6N137 OPTO-ISOLATOR 601 508 so8
Text: 1 Chapter 1. Introduction 1.1 Optoisolator Safety Standards and Regulatory Environment Optoisolator applications often include environments where high voltages are present. The ability of the optoisolator or optocoupler to sustain and to isolate high voltages, both transient as well as
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NTE3090
Abstract: Optoisolator
Text: NTE3090 Optoisolator Schmitt Trigger Output Description: The NTE3090 is an optoisolator in a 6–Lead DIP type package and contains a gallium arsenide IRED optically coupled to a high–speed integrated detector with a Schmitt Trigger output. This device is
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NTE3090
NTE3090
Optoisolator
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NTE3087
Abstract: No abstract text available
Text: NTE3087 Optoisolator High Speed, Open Collector, NAND Gate Output Description: The NTE3087 is an optoisolator which combines a GaAsP LED as the emitter and an integrated high gain multi–stage high speed photodetector. The output of the detector circuit is an open collector,
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NTE3087
NTE3087
2500Vrms
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NTE3041
Abstract: No abstract text available
Text: NTE3041 Optoisolator NPN Transistor Output Description: The NTE3041 is an optoisolator in a 6–Lead DIP type package consisting of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. Features: D High Current Transfer Ratio: 100% Min @ Spec Conditions
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NTE3041
526-NTE3041
NTE3041
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NTE3041
Abstract: No abstract text available
Text: NTE3041 Optoisolator NPN Transistor Output Description: The NTE3041 is an optoisolator in a 6–Lead DIP type package consisting of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. Features: D High Current Transfer Ratio: 100% Min @ Spec Conditions
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NTE3041
NTE3041
3550Vpk
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nte3095
Abstract: ir led PHOTODIODE
Text: NTE3095 Optoisolator Description: The NTE3095 is a dual photocoupler optoisolator in an 8–Lead DIP type package consisting of a pair of Gallium Aluminum Arsenide light emitting diodes and integrated photodetectors. Separate connections for the photodiode bias and output transistor collectors improve the speed up to a hundred
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NTE3095
NTE3095
ir led PHOTODIODE
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Untitled
Abstract: No abstract text available
Text: Optoisolator Specifications H11J1-H11J5 Optoisolator GaAs Infrared Emitting Diode and Light Activated Triac Driver T he HI 1J series consists o f a gallium arsenide infrared emitting diode coupled with a light activated silicon bilateral switch, which functions
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H11J1-H11J5
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Infrared Phototransistor
Abstract: TPOWER
Text: Optoisolator Specifications 4N38, 4N38A Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Phototransistor The 4N38 and 4N38A consist of a gallium arsenide infrared emitting diode coupled with a silicon phototransistor in a dual-in-line package. These
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4N38A
4N38A
E51868
0110b
Infrared Phototransistor
TPOWER
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Untitled
Abstract: No abstract text available
Text: ÖUALITY TECHNOLOGIES C O R P S7E D 7t*bbfi51 Generic Optoisolator Specifications _ DQQijBgfl i l ? • ÚTV GEPS2001 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Phototransistor 5 203 2 54 K M N - 15 381 R S m illiw atts m illiam ps am pere
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bbfi51
GEPS2001
EPS2001
50jiA
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Untitled
Abstract: No abstract text available
Text: Generic Optoisolator Specifications_ GEPS2001 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Phototransistor M IN . M AX. .040 .090 085 012 203 2 64 INFRARED E M ITTIN G DIODE 9 53 3.43 6 66 2.92 6.10 milliwatts milliamps ampere
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GEPS2001
GEPS2001
H51868
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4N29-4N33
Abstract: No abstract text available
Text: 57E J> ÛUALITY TECHNOLOGIES CORP Optoisolator Specifications _ 7MbbfiSl Ü00mi|4 •ÛTY 4N29, 4N29A, 4N30, 4N31, 4N32, 4N32A, 4N33 Optoisolator G aA s Infrared Emitting Diode and N PN Silicon Photo-Darlington Amplifier SY M BO L M IN E
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4N29A,
4N32A,
E51868
0110b
74bbflSl
4N29-4N33
4N29-4N33
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H11K1
Abstract: H11K
Text: Optoisolator Specifications H11K1, H11K2 Optoisolator GaAIAs Infrared Emitting Diode and Two NPN Silicon Photo-Darlington Amplifiers T h e H I IK series consists o f a gallium -alum inum -arsenide, infrared em itting diode coupled with two high voltage silicon Darlingtonconnected phocotransistors which have integral base-emitter resistors
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H11K1,
H11K2
INFRAR000,
H11K1
H11K
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Untitled
Abstract: No abstract text available
Text: ÛUALITY TECHNOLOGIES CORP S7E D • 74hLiB51 GOOMlRb TTb Optoisolator Specifications _ H11D1-H11D4 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon High Voltage Phototransistor * m il l im e t e r SYMBOL' A B C D «C ü T IK in
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74hLiB51
H11D1-H11D4
1D1-H11D4
E51868
0110b
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Untitled
Abstract: No abstract text available
Text: Optoisolator Specifications H11A1, H11A2, H11A3, H11A4, H11A5 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Phototransistor T h e HI 1A1 through H11A5 consist o f a gallium arsenide infrared emitting diode coupled with a silicon phototransistor in a dual in-line
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H11A1,
H11A2,
H11A3,
H11A4,
H11A5
H11A5
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Untitled
Abstract: No abstract text available
Text: Optoisolator Specificatio ns_ H11B1, H11B2, H11B3 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Photo-Darlington Amplifier M ILL IM E T E R S M IN . 406 1-01 2 28 3 1• {TO P V IE W I IN FR A R E D EM ITTING DIODE
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H11B1,
H11B2,
H11B3
H11B2
H11B3
0110b
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Untitled
Abstract: No abstract text available
Text: Optoisolator Specifications H11B255 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Photo-Darlington Amplifier The H ] IB255 consists o f a gallium arsenide infrared em itting diode coupled with a silicon photo-Darlington amplifier in a dual in-line package. This device is also
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H11B255
IB255
60apacitance
100STÌ
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on3131
Abstract: ON3131 panasonic dc to dc Optoisolator 20-P ON3132 ON3133 ON3134 PANASONIC ce Series
Text: Panasonic ON3131, ON3132, ON3133, ON3134 Optoisolators O ptoisolators U nit : mm • Outline ON3131 is a DIL type 4-pin single-channel optoisolator which is housed in a small package. This optoisolator series also includes the tw o-channel O N 3132, the three-channel O N 3133, and the fourchannel 3134.
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ON3131,
ON3132,
ON3133,
ON3134
ON3131
E79920)
ON3131 panasonic
dc to dc Optoisolator
20-P
ON3132
ON3133
ON3134
PANASONIC ce Series
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Opto-isolator
Abstract: 2C optoisolator
Text: Optoisolator Specifications H11G 1, H11G 2 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Darlington Connected Phototransistor T h e H I 1G series consists o f a gallium arsen id e, in fra re d em itting d io d e co u p led with a silicon D arlington-connected
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Untitled
Abstract: No abstract text available
Text: Optoisolator Specifications SL5504 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Phototransistor T h e SL5504 consists o f a gallium arsenide, infrared em itting diode coupled with a silicon phototransistor in a dual in-line package. T h e SL5504 com plies with UTE requirem ents as per UTE C96-551 ADD2.
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SL5504
SL5504
C96-551
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moc3020 triac driver
Abstract: MOC302I M0c3020-M0c3023 OPTOISOLATOR TRIAC DRIVER
Text: Optoisolator Specifications M 0c3020-M 0c3023 Optoisolator GaAs Infrared Emitting Diode and Light Activated Triac Driver T h e M O C3020-M CC3023 series consists o f a gallium arsenide, in fra re d em itting diode coupled with a light activated silicon bilateral switch,
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0c3020-M
0c3023
C3020-M
CC3023
MOC3020
MOC302I
MOC3022
MOC3023
moc3020 triac driver
M0c3020-M0c3023
OPTOISOLATOR TRIAC DRIVER
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Untitled
Abstract: No abstract text available
Text: Optoisolator Specifications H11G3 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Darlington Connected Phototransistor T h e H U G series consists o f a gallium arsenide, infrared em itting diode coupled with a silicon Darlington-connected phototransistor which has an integral base-emitter resistor to
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H11G3
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HIIN2
Abstract: No abstract text available
Text: Optoisolator H11N1, H11N2, H11N3 Optoisolator GaAIAs Infrared Emitting Diode and MicrpprocessorCompatible High-Speed Schmitt Trigger T h e H I IN series has a gallium -alum inum -arsenide, in fra re d em itting d io d e optically co u p led across a glass isolating
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H11N1,
H11N2,
H11N3
HIIN2
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7400 logic gate ic
Abstract: IC TTL 7400 4S00
Text: Optoisolator Specifications H74A1 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Phototransistor TTL Interface T h e H74A 1 provides logic-to-logic optical in terfa cin g o f T T L gates w ith guaranteed lev el com patibility in practical specified circuits. T h e
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H74A1
H74A1
7400 logic gate ic
IC TTL 7400
4S00
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Untitled
Abstract: No abstract text available
Text: Optoisolator Specifications 4N29, 4N29A, 4N30, 4N31, 4N32, 4N32A, 4N33 Optoisolator G a A s Infrared Emitting Diode and N PN Silicon Photo-Darlington Amplifier The 4N29 through 4N33 devices consist of a gallium arsenide infrared em itting diode coupled with a silicon photo-D arlington amplifier in a
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4N29A,
4N32A,
E51868
0110b
4N29-4N33
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