Sylvania OSRAM
Abstract: sideled OSRAM sylvania CM01B UV LED 320 nm osram sylvania coin 70055 high flux led osram OS-CM01C
Text: Product Information Bulletin COINlight SIDELED LED Modules • Long life: Up to 100,000 hours • OSRAM Hyper SIDELED allows high luminous flux • ± 60° viewing angle per LED • Entire Module consists of 8 or 12 LEDs • Low profile allows installation where space is limited
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06/100-240/24V
T0-562-4671
615nm
CM01B
Sylvania OSRAM
sideled OSRAM
sylvania
CM01B
UV LED 320 nm
osram sylvania
coin
70055
high flux led osram
OS-CM01C
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lg crt monitor circuit diagram
Abstract: micro servo 9g samsung lcd tv power supply diagrams MP 1008 es uPa2003 8049 microcontroller APPLICATION LG lcd tv tuner pioneer car dvd service manual lg washing machine circuit diagram 8ch pnp DARLINGTON TRANSISTOR ARRAY
Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 GaAs Device/ Silicon Microwave Semiconductor 7 Optical Device 8 Packages 9 Index 10 October 1998 The export of these products from Japan is regulated by the Japanese government. The export of some or all of
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X10679EJGV0SG00
lg crt monitor circuit diagram
micro servo 9g
samsung lcd tv power supply diagrams
MP 1008 es
uPa2003
8049 microcontroller APPLICATION
LG lcd tv tuner
pioneer car dvd service manual
lg washing machine circuit diagram
8ch pnp DARLINGTON TRANSISTOR ARRAY
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C4D15120
Abstract: No abstract text available
Text: C4D15120A–Silicon Carbide Schottky Diode Z-Rec Rectifier VRRM = IF TC<135˚C = 20 A Qc = Features • • • • • 96 nC Package 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Swtitching
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C4D15120A
O-220-2
C4D15120A
O-220-2
C4D15120
C4D15120
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osram sylvania
Abstract: sylvania Sylvania OSRAM LM11A UV SideLED LED012 linear led Linear OEM 615 transistor 10dc ir
Text: Product Information Bulletin LINEARlight FLEX SIDELED Flexible LED Strip • Unique solution based on side emitting LEDs • Long life: Up to 100,000 hours • OSRAM Hyper SIDELED allows high luminous flux • ±60° viewing angle per LED • Entire strip consists of 300 LEDs
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12/230-240/10V
06/100-240/10V
LM11A
osram sylvania
sylvania
Sylvania OSRAM
LM11A
UV SideLED
LED012
linear led
Linear
OEM 615
transistor 10dc ir
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Untitled
Abstract: No abstract text available
Text: C4D10120A VRRM = 1200 V Silicon Carbide Schottky Diode IF TC=135˚C = 14 A Z-Rec Rectifier Qc Features • • • • • 52 nC Package 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching
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C4D10120A
O-220-2
C4D10120A
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Untitled
Abstract: No abstract text available
Text: TPD4112K TOSHIBA Intelligent Power Device High Voltage Monolithic Silicon Power IC TPD4112K The TPD4112K is a DC brushless motor driver using high-voltage PWM control. It is fabricated using a high-voltage SOI process. The device contains a bootstrap circuit, PWM circuit, 3-phase
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TPD4112K
TPD4112K
TPD41112K.
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c4d08120a
Abstract: CSD04060
Text: C4D08120A–Silicon Carbide Schottky Diode VRRM = 1200 V Z-Rec Rectifier IF = 7.5 A Qc = 49 nC Features • • • • • Package 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Swtitching
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C4D08120A
O-220-2
C4D08120A
C4D08120
CSD04060
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C4D05120A
Abstract: C4D05120 5A 1.2KV TO-220-2
Text: C4D05120A–Silicon Carbide Schottky Diode VRRM = 1200 V Z-Rec Rectifier IF = 5 A Qc =34.5 nC Features • • • • • Package 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Swtitching
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C4D05120A
O-220-2
C4D05120A
C4D05120
C4D05120
5A 1.2KV TO-220-2
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C4D20120
Abstract: C4D20120A
Text: C4D20120A–Silicon Carbide Schottky Diode VRRM = 1200 V Z-Rec Rectifier IF = 20 A Qc =130 nC Features • • • • • Package 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Swtitching
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C4D20120A
O-220-2
C4D20120A
C4D20120
C4D20120
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c4d15120
Abstract: CSD04060 C4D15120A
Text: C4D15120A–Silicon Carbide Schottky Diode VRRM = 1200 V Z-Rec Rectifier IF = 15 A Qc = 96 nC Features • • • • • Package 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Swtitching
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C4D15120A
O-220-2
C4D15120A
C4D15120
c4d15120
CSD04060
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C4D10120A
Abstract: CSD04060 12kv fast switching
Text: C4D10120A–Silicon Carbide Schottky Diode VRRM = 1200 V Z-Rec Rectifier IF = 10 A Qc = 66 nC Features • • • • • Package 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Swtitching
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C4D10120A
O-220-2
C4D10120A
C4D10120
CSD04060
12kv fast switching
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C2D10120A
Abstract: No abstract text available
Text: C2D10120A VRRM VRRM= 1200 = 1200 V V Silicon Carbide Schottky Diode Zero R ecovery Rectifier Features • • • • • • • IF TC=135˚C = 14.5 A IF = 10 A Qc nC 61 nC Qc = 61 Package 1.2kV Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage
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C2D10120A
O-220-2
C2D10120
C2D10120A
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c4d02120
Abstract: C4D02120A
Text: C4D02120A–Silicon Carbide Schottky Diode VRRM = 1200 V Z-Rec Rectifier IF = 2 A Qc =15 nC Features • • • • • Package 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Swtitching
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C4D02120A
O-220-2
C4D02120A
C4D02120
c4d02120
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Untitled
Abstract: No abstract text available
Text: TPD4111K TOSHIBA Intelligent Power Device High Voltage Monolithic Silicon Power IC TPD4111K The TPD4111K is a DC brushless motor driver using high-voltage PWM control. It is fabricated using a high-voltage SOI process. The device contains a bootstrap circuit, PWM circuit, 3-phase
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TPD4111K
TPD4111K
TPD4111K.
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TPD4111K
Abstract: VVS100 IC package code H,V igbt ihb
Text: TPD4111K TOSHIBA Intelligent Power Device High Voltage Monolithic Silicon Power IC TPD4111K The TPD4111K is a DC brushless motor driver using high-voltage PWM control. It is fabricated using a high-voltage SOI process. The device contains a bootstrap circuit, PWM circuit, 3-phase
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TPD4111K
TPD4111K
TPD4111K.
VVS100
IC package code H,V
igbt ihb
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Untitled
Abstract: No abstract text available
Text: ICS1494 Integrated Circuit Systems, Inc. Enhanced Video Dot Clock Generator Features Features • Low cost - eliminates need for multiple crystal clock os • 135 MHz Guaranteed Performance • Fast acquisition of selected frequencies cillators in video display subsystems
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ICS1494
ICS1494AN-XXX
ICS1494AM-XXX
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ics1494m
Abstract: No abstract text available
Text: ICS1494 Integrated Circuit Systems, Inc. Enhanced Video Dot Clock Generator Features Features • Low cost - eliminates need for multiple crystal clock os • cillators in video display subsystems 135 MHz Guaranteed Performance • Fast acquisition of selected frequencies
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ICS1494
ICS1494
ICS1494M-XXX
ICS1494N-XXX
ics1494m
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240AA
Abstract: IXTH7P50 Complementary MOSFETs ixys vmk
Text: il û n MOSFET Modules N-Channel Enhancement Mode Type V oss max. os «nk 1* VMO VMK VMM C ityp. typ. V max. °«, max. *^hJ8 max. pF pF ns nC K/W 4200 135 600 160 0.8 9200 570 400 450 53000 340 600 2300 Package style ' D max. See outlines on page 35/36 Tc = 25-C
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15-045C
15-05C
90-02T2
400-02F
O-240AA
10P50
11P50
O-247
240AA
IXTH7P50
Complementary MOSFETs
ixys vmk
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back Tunnel diode
Abstract: "back diode" Germanium power DIODE tunnel MBD back diode
Text: METELICS 11E CORP D I b OS 1 35 2 0 0Ü Q 13 0 3 IRLANAR BACK TUNNEL DIODES i lo w freq u en cy Detector Series (To 2 GHz) FEATURES • • • • • Rugged Germanium Planar Construction Excellent Temperature Stability No DC Bias Required Wide Video Bandwidth
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MIL-STD-19500
-65to+
17dBmCW
MBD-1050-C19
MBD-1050-A20
MBD-1050-T80
MBD-1050-T54
MBD-1050-H20
MBD-1050-E26
MBD-205s
back Tunnel diode
"back diode"
Germanium power
DIODE tunnel MBD
back diode
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A315A
Abstract: A315B A315 A315F A315G
Text: HARRIS SEMICON» SECTOR bflE D 33 HB H3Ü2271 A315 Series 3A, 50V - 200V Ultrafast Diodes December 1993 Features • 0050333 0=10 H H A S Package AL-4 Glass Passivated Junction TOP VIEW • Ultra-Fast Recovery Times • Low Forward Voltage Drop, High-Current Capability
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A315A,
A315B,
A315F,
A315G
50/100NS/CM)
25VDC
A315A
A315B
A315
A315F
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THZ027W05
Abstract: THZ5R6W05 THZ6R2W05 THZ6R8W05 THZ7R5W05 THZ8R2W05 THZ024W10 SPRAGUE 748
Text: ALLEGRO MICROSYSTEMS 8 5 1 4 0 1 9 S P R A GU E. INC T3 D • 0SD433Û S E M I C O N D S / ICS 0QD3b5 M t. ■ 93D 03624 ALGR VT-//-OS DIODE CHIPS ‘THZ’ Series ‘W’ Zener Diodes ELECTRICAL CHARACTERISTICS at Tfl = 25°C Zener Voltage Leakage Current
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0SD433Ã
00D3b5M
THZ5R6W05
THZ5R6W10
THZ6R2W05
THZ6R2W10
THZ6R8W05
THZ6R8W10
THZ7R5W05
THZ030W05
THZ027W05
THZ8R2W05
THZ024W10
SPRAGUE 748
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Untitled
Abstract: No abstract text available
Text: PM4575J Silicon N-Channel Power MOS FET Module HITACHI Application H igh Speed Power Switching Features • • • • • • • • Equipped with Power M OS FET Low on-resistance High speed switching Low drive current W ide area o f safe operation Inherent parallel diode betw een source and drain
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PM4575J
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BE32A
Abstract: No abstract text available
Text: S E M I C O N D U C T O R A ugust 1998 Revised A ugust 1998 TM FC940L Low Voltage 1 to 18 Clock Distribution Device with Selectable PECL or LVTTL Input General Description Features T h e FC 940L is a 1 to 18 low voltage clock fa n o ut buffer. The device allows fo r the selection of e ithe r differential
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FC940L
BE32A
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OS 470 88, VARISTOR
Abstract: OS 470 68, VARISTOR varistor sl 22 OS 470 VARISTOR L 9101 ic 7490 Ic 7490 circuit 7490 ic of IC 7490 M5L241
Text: EDAL INDUSTRIES INC b4E D 3G^S71b ÜG0D347 TT3 H E D L EDAL Metal Oxide Varistors MOV Transient Voltage Suppressors rrri-açSii.; Description/Features Selection Procedure Metal Oxide Varistors and Transient Voltage Suppressors having a non-linear currentvoltage characteristic which sustains an almost
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G0D347
OS 470 88, VARISTOR
OS 470 68, VARISTOR
varistor sl 22
OS 470 VARISTOR
L 9101
ic 7490
Ic 7490 circuit
7490 ic
of IC 7490
M5L241
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