V-763-OXY
Abstract: 760nm multi mode vcsel oxy power AVAP760 CLASS III-A LASER
Text: AVAP 760 SPECDILAS V-763-OXY 760nm Single-mode VCSEL AVAP 760 series SPECDILAS V-763-OXY diagrams (typical characteristics) Spectrum TC = 2 5 ° C Output intensity [20dB/div] PO = 0 . 4 m W PO = 0 . 3 m W PO = 0 . 2 m W 754 756 Features 762 764 766 Current tuning
|
Original
|
PDF
|
-763-OXY
760nm
-763-OXY)
20dB/div]
D-82140
/www/pdf/lc/v763oxy
V-763-OXY
760nm
multi mode vcsel
oxy power
AVAP760
CLASS III-A LASER
|
Untitled
Abstract: No abstract text available
Text: SPECDILAS V-Series SPECDILAS V-763-OXY-MTE General Specifications - no mode hopping - singlemode 20 dB suppression - circular beam profile - low beam divergence - VCSEL technology - AR-coated windows 0,03 Applications: - Reference laser 0,03 - HeNe laser replacement
|
Original
|
PDF
|
-763-OXY-MTE
-763-OXY-MTE
|
Untitled
Abstract: No abstract text available
Text: Preliminary SPECDILAS V-Series SPECDILAS V-763-OXY-MTE 2 General Specifications - no mode hopping 0,255 - singlemode 20 dB suppression - circular beam profile - low beam divergence - VCSEL technology - AR-coated windows 0,03 Applications: - Reference laser
|
Original
|
PDF
|
-763-OXY-MTE
|
o2-a2
Abstract: O2-A2 Oxygen Sensor Alphasense oxygen O2-A2 SO2-BF GAS SENSOR for oxygen Alphasense CO-BF so2 sensor datasheet cl2-b1 M339
Text: α Technical Specification S 4 to 20 mA T ds ffor or Trransmitter Boar Boards Alphasense B T ype T oxic & A A type Oxy gen Sensor s Type To Oxyg Sensors PATENT PENDING Figure 1 Toxic and Oxygen Transmitter Boards Toxic Transmitter Oxygen Transmitter
|
Original
|
PDF
|
TDS/TB4/20/10/03
o2-a2
O2-A2 Oxygen Sensor
Alphasense
oxygen O2-A2
SO2-BF
GAS SENSOR for oxygen
Alphasense CO-BF
so2 sensor datasheet
cl2-b1
M339
|
falla
Abstract: 2LP41 2LP41SP auto clutch
Text: revision for dwg # 1PB-2LPxxx rev ch.no. - - 40 mm [1.6 in] Shown 2LP66, standard color: black n24.5 mm [1.0 in] 30 mm [1.2 in] Metal legend plates are engraved on both sides, one side in horizontal and the other side in a vertical orientation. n60 mm n24.5 mm
|
Original
|
PDF
|
2LP66,
falla
2LP41
2LP41SP
auto clutch
|
Untitled
Abstract: No abstract text available
Text: IMAGE INTENSIFIERS Image Intensifier Image intensifiers often abbreviated as I. I. were primarily developed for nighttime viewing and surveillance under moonlight or starlight. Image intensifiers are capable of detecting and amplifying low-light-level images (weak emissions or
|
Original
|
PDF
|
B-1348
E-08290
0004E02
|
SICTE-12
Abstract: SICTE12
Text: SENICON COMPONENTS EÒE INC Ö13S1S7 D 000DÔ07 4 r-//-Ä 3 OXY CASE-C4 TRANSIENT SUPPRESSOR! CTRICAL CHARACTERISTICS at 25 C . "'?!iS ^ 1 5 ¿Slfl s<vfe^a?§; 'ÌMllli?: PTE & IN6373 - IN6389 SERIES 5.0 TO 45 VOLTS) FEATURES: DESCRIPTION . a high quality suppressor for use in commercial appli
|
OCR Scan
|
PDF
|
13S1S7
IN6373
IN6389
Bi1N6382
1N6383
1N6384
1N6385
1N6386
SICTE-22C
SMPTE-22C
SICTE-12
SICTE12
|
Untitled
Abstract: No abstract text available
Text: SHARP PT361/PT361F Com pact Type Intermediate Acceptance Phototransistor PT361/PT361F OutSne Dimensions • Features U n it : m m 1. 03.2m m com pact ep oxy resin package 2. High sensitivity ¿ 3 .2 ±a2 (It ■ M IN . 0.1mA at Ev = 21x) 3. Interm ediate acceptance ( A # : T Y P . ±20°)
|
OCR Scan
|
PDF
|
PT361/PT361F
PT361F
PT361
|
Untitled
Abstract: No abstract text available
Text: □PM Dense-Pac Microsystems, Inc. DPS8256P8 256K X 8 CMOS SRAM MODULE O DESCRIPTION: The DPS8256P8-25, -35, -45, -55 is a high speed 256K x 8 Static Random Access M em o ry SRAM m o d u le constructed on an ep oxy lam inate substrate using eight 256K x 1 C M O S RAM 's in plastic surface
|
OCR Scan
|
PDF
|
DPS8256P8
DPS8256P8-25,
DPS8256P8
DPS8256P8-25
DPS8256P8-35
DPS8256P8-45
DPS8256P8-55
30A033-00
30A033-00
|
CYM9270
Abstract: CYM9271B CYM9272A CYM9273 R2351
Text: CYM9270 CYM9271B CYM9272A CYM9273 ’# CYPRESS 64K x 128K x 256K x 512K x Features 36 36 36 36 SRAM SRAM SRAM SRAM Module Module Module Module 9273 in p lastic surface m ount packages on an ep oxy lam i nate board w ith pins. T he m odules are desig ned to be in cor
|
OCR Scan
|
PDF
|
/128K
144-Position
CYM9270,
CYM9271B,
CYM9272A,
CYM9273
9271B,
CYM9270
CYM9271B
CYM9272A
R2351
|
Untitled
Abstract: No abstract text available
Text: fax id: 2049 ^C YPR ESS PRELIMINARY C YM 1831V33 64K x 32 3.3V Static RAM Module Features ule is co n stru cte d from tw o 64K x 16 S R A M s in SO J packages m ounted on an ep oxy lam inate substrate. Four chip selects are used to inde pen de ntly en ab le the four bytes. Reading or
|
OCR Scan
|
PDF
|
1831V33
64-pin
64-pin
|
Untitled
Abstract: No abstract text available
Text: C YM 1841V33 256K x 32 3.3V Static RAM Module Features ule is con stru cted from tw o 2 5 6 K x 16 S R A M s in SO J p a cka g es m ounted on an ep oxy lam inate substrate. Four C hip S elects are used to in de pen de ntly en ab le th e four bytes. Reading or
|
OCR Scan
|
PDF
|
1841V33
64-pin
64-pin
|
Untitled
Abstract: No abstract text available
Text: — .135 .115 13.431 12.921 .040 MAX. [ 1.021 EP OXY MENISCUS ATHODE — .026 MAX. [ 0. 66] .95 MIN. [2 4 .1] 250 [ 6 , 3 5 1 220 [ 5 , 5 8 1 O P E R A T I N G C H A R A C T E R I S T I C S AT 25°C A M BIE N T MIN. LED CHARACTERISTICS LUMINOUS INTENSITY TYP.
|
OCR Scan
|
PDF
|
10msec.
|
SOL18
Abstract: SOL-18 sol18 package MLT04GS "Analog Multiplier" analog multiplier analog multipliers MLT04 MLT04GBC MLT04GP
Text: ANALOG ► DEVICES Four-Channel, Four-Quadrant Analog Multiplier MLT04 FU N C T IO N A L B L O C K D IA G R A M 18-L ead E p oxy D IP P S u ffix 18-L ead W id e B ody SO IC (S Suffix) FEATURES Four Independent Channels Voltage IN, V oltage O U T No External Parts Required
|
OCR Scan
|
PDF
|
MLT04
18-Lead
SOL18
SOL-18
sol18 package
MLT04GS
"Analog Multiplier"
analog multiplier
analog multipliers
MLT04
MLT04GBC
MLT04GP
|
|
|
Untitled
Abstract: No abstract text available
Text: fax id: 2050 ^C YPR ESS PRELIMINARY C YM 1841V33 256K x 32 3.3V Static RAM Module Features ule is co n stru cte d from tw o 2 5 6 K x 16 S R A M s in SO J p a cka g es m ounted on an ep oxy lam inate substrate. Four chip selects are used to in de pen de ntly en ab le the four bytes. R eading or
|
OCR Scan
|
PDF
|
1841V33
64-pin
64-pin
|
Q62702-K0244
Abstract: Diode LT 443
Text: SIEMENS KOM 2108 NEU: 5 x 5-Silizium-PIN-Fotodiodenarray NEW: 5 x 5 Silicon PIN Photodiode Array E p oxy re s in tra n s p a re n t E le c tro d e s S u rfa c e m e ta lliz e d al th e edges, Au Ti m ir \ 1 110 9 8 7 6 5 •■■■■■I 1920 21 22 23 24 25
|
OCR Scan
|
PDF
|
|
HVM12 diode
Abstract: diode HVM12 HVM05 HVM12 350 214B HVM08 HVM10 HVM12 HVM14 HVM15
Text: I nternational HVM SERIES S em ico nducto r , I n c . HIGH VOLTAGE POWER RECTIFIER FEATURES: High P o w e r A v a la n c h e G ra d e S ilic o n E p oxy E n c a p s u la te d N ote: A v a rie ty o f te rm in a tio n s are a va ila b le . The d ista n ce b etw een th e e nd o f th e te rm in a tio n and th e end o f
|
OCR Scan
|
PDF
|
HVM05
HVM08
HVM10
HVM12
HVM14
HVM15
HVM16
HVM12 diode
diode HVM12
HVM12 350
214B
|
Untitled
Abstract: No abstract text available
Text: HYM72V16M656T6 1SUx64,16Mx16 based, PC100 DESCRIPTION T h e H Y M 72 V 1 6 M 65 6 T 6 -S e rie s are high speed 3 .3 -V o lt S yn ch ro n o us D R A M M odules com posed o f fo u r 16M x16 bit S yn chronous D R AM s in 54-pln TS O P II and 8-pin T S S O P 2K b it E E P R O M on a 144-pin Zlg Z a g D ual pin glass-e p oxy
|
OCR Scan
|
PDF
|
HYM72V16M656T6
1SUx64
16Mx16
PC100
54-pln
144-pin
256M-bit
|
Untitled
Abstract: No abstract text available
Text: HYM72V32M656T6 32Mx64, 16Mx16 based, PC100 DESCRIPTION The H Y M 72V 32M 656T6 S eries a re high speed 3 .3 -V o lt S yn ch ro n o us DRAM M odules co m posed o f e ig h t 16M x16 bit Syn ch ro n o us D R A M s in 54-pin TS O P II and 8-pin T S S O P 2K b it E E P R O M on a 144-pin Zig Z a g D ual pin gla ss-e p oxy
|
OCR Scan
|
PDF
|
HYM72V32M656T6
32Mx64,
16Mx16
PC100
656T6
54-pin
144-pin
256Mbytes.
0039i'
|
2700C
Abstract: No abstract text available
Text: IDT7MB4040 256K x 9 CMOS STATIC RAM MODULE Integrated D evice Technology» Inc. FEATURES DESCRIPTION • High density s e p a ra te I/O , 2 m eg ab it 2 5 6 K x 9 static T h e ID T 7 M B 4 0 4 0 is a s e p a ra te I/O , 9 bit w id e 2 m eg ab it s ta tic R A M m o d u le c o n s tru c ted on a m u ltila ye r e p oxy
|
OCR Scan
|
PDF
|
IDT7MB4040
IDT7MB4040
2700C
|
Untitled
Abstract: No abstract text available
Text: an AM P com pany GaAs SPDT Switch DC - 4 GHz MASW4030G V 2.00 Features • Absorbtive or Reflective • Excellent Intermodulation Products • Excellent Tem perature Stability • Fast Switching Speed, 3 ns Typical • Ultra Low DC Power Consum ption • Independent Bias Control
|
OCR Scan
|
PDF
|
MASW4030G
MASW4030G
|
Untitled
Abstract: No abstract text available
Text: Mn AM P com pany 5-Bit GaAs Digital Attenuator DC - 2 GHz MADA2020G V 2 .0 0 Features • Attenuation ld B Steps to 31 dB • Temperature Stability ±0.1dB from -55° to +85°C Typical • Fast Switching Speed, 3 ns Typical to 90% Guaranteed Specifications
|
OCR Scan
|
PDF
|
MADA2020G
229mm
|
Paccom Electronics resistor
Abstract: resistor "color code" 185ra paccom capacitor, ES series polypropylene film foil axial capacitor 63Vdc
Text: Contents and Product Selection Guide Caramic Capacito«* Series MT ML Type Chip Chip D esc n p tto n General Purpose Fe a tu re Multilayer Monolithic O p e ra tin g C ap ac itan c e Te m p erture Page V o lta g e Ra n g e Tem p erature R a n g e Tolera nce R a n g e
|
OCR Scan
|
PDF
|
16Vdc
Paccom Electronics resistor
resistor "color code"
185ra
paccom capacitor, ES series
polypropylene film foil axial capacitor 63Vdc
|
Untitled
Abstract: No abstract text available
Text: HAT2019R Silicon N Channel Power MOS FET High Speed Power Switching HITACHI Features • Low on-resistance • Capable of 2.5 V gate drive • Low drive current • High density mounting Outline SOP-8 5 6 7 8 D D D D 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain
|
OCR Scan
|
PDF
|
HAT2019R
ADE-208-481
40x40x1
|
