Junction-FET
Abstract: 2SJ164 2SK1104 SC-72
Text: Silicon Junction FETs Small Signal 2SJ164 Silicon P-Channel Junction FET For switching Complementary to 2SK1104 unit: mm 3.0±0.2 4.0±0.2 • Features 15.6±0.5 ● Low ON-resistance ● Low-noise characteristics Ratings Unit Gate to Drain voltage VGDS
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2SJ164
2SK1104
SC-72
Junction-FET
2SJ164
2SK1104
SC-72
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2SJ0163
Abstract: 2SJ163 2SK1103
Text: Silicon Junction FETs Small Signal 2SJ0163 (2SJ163) Silicon P-channel junction FET Unit: mm For switching circuits Complementary to 2SK1103 0.40+0.10 –0.05 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 • Absolute Maximum Ratings Ta = 25°C 2.90+0.20 –0.05
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2SJ0163
2SJ163)
2SK1103
2SJ0163
2SJ163
2SK1103
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2SK1104
Abstract: 2SJ0164 2SJ164 SC-72
Text: Silicon Junction FETs Small Signal 2SJ0164 (2SJ164) Silicon P-Channel Junction FET For switching Complementary to 2SK1104 unit: mm 3.0±0.2 4.0±0.2 • Features 15.6±0.5 ● Low ON-resistance ● Low-noise characteristics Ratings Unit Gate to Drain voltage
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2SJ0164
2SJ164)
2SK1104
SC-72
2SK1104
2SJ0164
2SJ164
SC-72
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SJ0163 (2SJ163) Silicon P-channel junction FET Unit: mm For switching circuits Complementary to 2SK1103 0.40+0.10 –0.05 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1
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2002/95/EC)
2SJ0163
2SJ163)
2SK1103
SC-59
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Untitled
Abstract: No abstract text available
Text: 2SJ163 Silicon Junction FETs Small Signal 2SJ163 Silicon P-Channel Junction Unit : mm For general use switching Complementary with 2SK1103 +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 1.45 +0.1 3 V Drain current ID –20 mA Gate current IG –10
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2SJ163
2SK1103
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SJ0364G Silicon P-channel junction FET For analog switch circuits • Features ■ Package • Low ON resistance • Low-noise characteristics • Code SMini3-F2
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2002/95/EC)
2SJ0364G
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Untitled
Abstract: No abstract text available
Text: Silicon Junction FETs Small Signal 2SJ0163 (2SJ163) Silicon P-Channel Junction FET For general switching Complementary to 2SK1103 unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 Unit VGDS 65 V Drain current ID −20 mA Gate current IG −10 mA Allowable power dissipation
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2SJ0163
2SJ163)
2SK1103
O-236
SC-59
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Junction-FET
Abstract: 2SJ0163 2SJ163 2SK1103
Text: Silicon Junction FETs Small Signal 2SJ0163 (2SJ163) Silicon P-Channel Junction FET For general switching Complementary to 2SK1103 unit: mm +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 +0.1 0.4 –0.05 3 V Drain current ID −20 mA Gate current
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2SJ0163
2SJ163)
2SK1103
Junction-FET
2SJ0163
2SJ163
2SK1103
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PDF
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SJ0364G Silicon P-channel junction FET For analog switch circuits • Package • Low ON resistance • Low-noise characteristics • Code SMini3-F2 • Pin Name
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2002/95/EC)
2SJ0364G
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PDF
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SJ0164 (2SJ164) Silicon P-channel junction FET Unit: mm 2.0±0.2 4.0±0.2 (0.8) 3.0±0.2 For switching circuits Complementary to 2SK1104 (0.8) 0.75 max. • Features
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2002/95/EC)
2SJ0164
2SJ164)
2SK1104
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SJ0364G Silicon P-channel junction FET For analog switch circuits • Package • Low ON resistance • Low-noise characteristics • Code SMini3-F2 • Pin Name
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2002/95/EC)
2SJ0364G
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VDSV
Abstract: 2SJ163 2SK1103 mini 29
Text: Silicon Junction FETs Small Signal 2SJ163 Silicon P-Channel Junction FET For general switching Complementary to 2SK1103 unit: mm +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 1.45 0.95 +0.1 0.4 –0.05 0.16 –0.06 VGDS 65 V Drain current ID −20
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2SJ163
2SK1103
VDSV
2SJ163
2SK1103
mini 29
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2SJ0364
Abstract: 2SJ364
Text: Silicon Junction FETs Small Signal 2SJ0364 (2SJ364) Silicon P-Channel Junction FET For analog switch (0.425) unit: mm 0.3+0.1 –0.0 • Features ● Low ON-resistance ● Low-noise characteristics 0.15+0.10 –0.05 2.1±0.1 0.9+0.2 –0.1 5° 1.25±0.10
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2SJ0364
2SJ364)
2SJ0364
2SJ364
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2SK1104
Abstract: 2SJ0164 2SJ164
Text: Silicon Junction FETs Small Signal 2SJ0164 (2SJ164) Silicon P-channel junction FET Unit: mm 2.0±0.2 4.0±0.2 (0.8) 3.0±0.2 For switching circuits Complementary to 2SK1104 (0.8) 0.75 max. • Features 15.6±0.5 • Low ON resistance • Low-noise characteristics
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2SJ0164
2SJ164)
2SK1104
2SK1104
2SJ0164
2SJ164
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2N5460
Abstract: No abstract text available
Text: Philips Semiconductors Preliminary specification P-channel junction FETs 2N5460; 2N5461; 2N5462 DESCRIPTION P-channel silicon junction FET in a TO-92 plastic envelope. Intended for use as an analog switch and an amplifier. PINNING - TO-92 PIN DESCRIPTION 1
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2N5460;
2N5461;
2N5462
2N5460/5461/5462
2N5460
2N5461
2N5460
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2SJ145
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR FIELD-EFFECT TRANSISTOR 2SJ145 FOR LOW FREQUENCY AMPLIFY APPLICATION P CHANNEL JUNCTION TYPE DESCRIPTION Mitsubishi 2SJ145 is a small type resin sealed P channel junction type FET. It OUTLINE DRAWING 2.1 ±0.2 is especially designed for low frequency voltage amplify, analog switch
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OCR Scan
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2SJ145
2SJ145
SC-70
10mVrms.
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2SJ40
Abstract: SK381 2SK381
Text: MITSUBISHI SEMICONDUCTOR FIELD-EFFECT TRANSISTOR 2SJ40 FOR LOW FREQUENCY AMPLIFY APPLICATION P CHANNEL JUNCTION TYPE DESCRIPTION Mitsubishi 2SJ40 is a small type resin sealed P channel junction type FET. It is OUTLINE DRAWING 4.3MAX especially designed to r low frequency voltage am plify, analog switch
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2SJ40
2SJ40
2SK381
10mVrms
SK381
SK381
2SK381
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2SJ125
Abstract: marking XI
Text: MITSUBISHI SEMICONDUCTOR FIELD-EFFECT TRANSISTOR 2SJ125 FOR LOW FREQUENCY AMPLIFY APPLICATION P CHANNEL JUNCTION TYPE DESCRIPTION Mitsubishi 2SJ125 is a small type resin sealed P channel junction type FET. It OUTLINE DRAWING o - +0.5 2-5 0.3 is especially designed for low frequency voltage amplify, analog switch
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2SJ125
2SJ125
SC-59
O-236
10mVrms.
marking XI
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bf862
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS PÂTÂ SlnlEET BF862 N-channel junction FET Objective specification Philips Sem iconductors 1999 May 14 PHILIPS Philips Semiconductors Objective specification N-channel junction FET BF862 FEATURES PINNING SOT23 • High transition fre q u e n cy fo r excellent se n sitivity in
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BF862
MSB003
bf862
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NEC Ga FET marking L
Abstract: lg TYP 513 309 NE329S01 low noise FET NEC U SAAI Marking
Text: _ DATA SHEET_ M F P / HETERO JUNCTION FIELD EFFECT TRANSÌSTOR / NE329S01 X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE329S01 is a Hetero Junction FET that utilizes the Unit: mm
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NE329S01
NE329S01
NE329S01-T1
NE329S01-T1B
NEC Ga FET marking L
lg TYP 513 309
low noise FET NEC U
SAAI Marking
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Untitled
Abstract: No abstract text available
Text: bb53T31 DQ240CH 70S « A P X N AMER PHILIPS/DISCRETE J174 TO 177 b?E D J V P-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Silicon symmetrical p-channel junction FETs in a plastic TO-92 envelope and intended fo r application with analog switches, choppers, commutators etc.
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bb53T31
DQ240CH
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2N3820
Abstract: No abstract text available
Text: Philips Components D ata sheet status Preliminary specification date of issue October 1990 DESCRIPTION Silicon p-channel junction field-e ffect transistor in a plastic TO-92 envelope. It is intended fo r use in general purpose am plifiers. 2N3820 P-channel J-FET
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2N3820
MBB181
003SA4b
S3T31
Q03Sfl4fl
2N3820
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"P-Channel JFET"
Abstract: 2N3820 P-Channel JFET 2n3820 transistor Junction P FET E 212 fet 2N3820 ti
Text: Philips Components 2N3820 Data sheet status Preliminary specification date of issue October 1990 P-channel J-FET PINNING • TO-92 DESCRIPTION Silicon p-channel junction field-effect transistor in a plastic TO-92 envelope. It ¡s intended for use in general purpose amplifiers.
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2N3820
MBB161
003Sfl4b
67max
"P-Channel JFET"
2N3820
P-Channel JFET
2n3820 transistor
Junction P FET
E 212 fet
2N3820 ti
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Untitled
Abstract: No abstract text available
Text: J174 TO 177 _/ V _ P-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Silicon symmetrical p-channel junction FETs in a plastic TO-92 envelope and intended fo r application w ith analog switches, choppers, commutators etc. A special feature is the interchangeability of the drain and source connections.
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