Mosfet
Abstract: SSF3615
Text: SSF3615 30V P-Channel MOSFET D DESCRIPTION The SSF3615 uses advanced trench technology to provide excellent RDS ON and low gate charge .This device is suitable for use as a load switch or in PWM applications. G S Schematic Diagram GENERAL FEATURES ● VDS =- 30V,ID =-10A
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SSF3615
SSF3615
330mm
Mosfet
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SUD40N04-10A
Abstract: No abstract text available
Text: SPICE Device Model SUD40N04-10A Vishay Siliconix N-Channel 40-V D-S 175°C MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SUD40N04-10A
0-to10V
19-Oct-01
SUD40N04-10A
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STS10PF30L
Abstract: No abstract text available
Text: STS10PF30L P-CHANNEL 30V - 0.012 Ω - 10A SO-8 STripFET II POWER MOSFET PRELIMINARY DATA TYPE STS10PF30L • ■ ■ VDSS RDS on ID 30V <0.014 Ω 10 A TYPICAL RDS(on) = 0.012 Ω STANDARDOUTLINEFOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE
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STS10PF30L
S10PF30L
STS10PF30L
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STS10PF30L
Abstract: No abstract text available
Text: STS10PF30L P-CHANNEL 30V - 0.012 Ω - 10A SO-8 STripFET II POWER MOSFET Table 1: General Features TYPE STS10PF30L • ■ ■ Figure 1:Package VDSS RDS on ID 30V <0.014 Ω 10 A TYPICAL RDS(on) = 0.012 Ω STANDARDOUTLINEFOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY
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STS10PF30L
S10PF30L
STS10PF30L
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S10PF30L
Abstract: STS10PF30L sts10p
Text: STS10PF30L P-CHANNEL 30V - 0.012 Ω - 10A SO-8 STripFET II POWER MOSFET Table 1: General Features TYPE STS10PF30L • ■ ■ Figure 1:Package VDSS RDS on ID 30V <0.014 Ω 10 A TYPICAL RDS(on) = 0.012 Ω STANDARDOUTLINEFOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY
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STS10PF30L
S10PF30L
STS10PF30L
sts10p
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P4413
Abstract: p4413ls P4413L
Text: DMG4413LSS 30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits RDS ON max ID max TA = 25°C 7.5mΩ @ VGS = -10V -12A 10.2mΩ @ VGS = -4.5V -10A V(BR)DSS • • • • • • NEW PRODUCT -30V Mechanical Data Description and Applications
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DMG4413LSS
AEC-Q101
DS31754
P4413
p4413ls
P4413L
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Untitled
Abstract: No abstract text available
Text: IRF740 N-channel 400V - 0.46Ω - 10A TO-220 PowerMESH II Power MOSFET General features VDSS @Tjmax Type RDS(on) ID ) s ( t c u d o ) r s ( P t c Description e t u e d l o o r s Internal schematic diagram P b e O t e l ) o s ( s t b Applications c u O
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IRF740
O-220
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Untitled
Abstract: No abstract text available
Text: DMG4413LSS 30V P-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits Product Summary RDS ON max ID max TA = 25°C 7.5mΩ @ VGS = -10V -12A 10.2mΩ @ VGS = -4.5V -10A V(BR)DSS • • • • • • N EW PRODU CT -30V Mechanical Data Description and Applications
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DMG4413LSS
AEC-Q101
DS31754
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Untitled
Abstract: No abstract text available
Text: DMP2008UFG 20V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Features RDS ON max ID max TA = 25°C 8.6mΩ @ VGS = -4.5V -12A V(BR)DSS -20V 11mΩ @ VGS = -2.5V -10A 15mΩ @ VGS = -1.8V -9.3A 21mΩ @ VGS = -1.5V -7.8A • • • • • Mechanical Data This MOSFET has been designed to minimize the on-state resistance
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DMP2008UFG
AEC-Q101
DS35694
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PowerDI3333-8
Abstract: No abstract text available
Text: DMP2008UFG 20V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI RDS ON max ID max TA = 25°C 9mΩ @ VGS = -4.5V -12A V(BR)DSS -20V Features 12mΩ @ VGS = -2.5V -10A 16mΩ @ VGS = -1.8V -9.3A 21mΩ @ VGS = -1.5V -7.8A • • • • • Mechanical Data This MOSFET has been designed to minimize the on-state resistance
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DMP2008UFG
AEC-Q101
DS35694
PowerDI3333-8
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dpak mosfet motor control DC
Abstract: STD10PF06 STD10PF06 equivalent TO252 dpak mosfet
Text: STD10PF06 P-CHANNEL 60V - 0.18 Ω - 10A IPAK/DPAK STripFET II POWER MOSFET • ■ ■ ■ ■ ■ ■ TYPE VDSS RDS on ID STD10PF06 60 V < 0.20 Ω 10 A TYPICAL RDS(on) = 0.18 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE APPLICATION ORIENTED
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STD10PF06
O-251)
O-252)
O-251
O-252
dpak mosfet motor control DC
STD10PF06
STD10PF06 equivalent
TO252
dpak mosfet
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Untitled
Abstract: No abstract text available
Text: DMP2008UFG 20V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI RDS ON max ID max TA = 25°C 8mΩ @ VGS = -4.5V -12A V(BR)DSS -20V Features 9.8mΩ @ VGS = -2.5V -10A 13mΩ @ VGS = -1.8V -9.3A 17mΩ @ VGS = -1.5V -8.3A • • • • • • Mechanical Data
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DMP2008UFG
AEC-Q101
DS35694
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Untitled
Abstract: No abstract text available
Text: STD10PF06 P-CHANNEL 60V - 0.18 Ω - 10A IPAK/DPAK STripFET II POWER MOSFET • ■ ■ ■ ■ ■ ■ TYPE VDSS RDS on ID STD10PF06 60 V < 0.20 Ω 10 A TYPICAL RDS(on) = 0.18 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE APPLICATION ORIENTED
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STD10PF06
O-251)
O-252)
O-251
O-252
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Untitled
Abstract: No abstract text available
Text: DMP2008UFG 20V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI V BR DSS -20V Features RDS(ON) max ID max TA = +25°C 8mΩ @ VGS = -4.5V -12A 9.8mΩ @ VGS = -2.5V -10A 13mΩ @ VGS = -1.8V -9.3A 17mΩ @ VGS = -1.5V -8.3A • Low RDS(ON) – ensures on state losses are minimized
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DMP2008UFG
AEC-Q101
DS35694
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Untitled
Abstract: No abstract text available
Text: DMP2008UFG 20V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI V BR DSS -20V Features RDS(ON) max ID max TA = +25°C 8m @ VGS = -4.5V -12A 9.8m @ VGS = -2.5V -10A 13m @ VGS = -1.8V -9.3A 17m @ VGS = -1.5V -8.3A • Low RDS(ON) – ensures on state losses are minimized
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DMP2008UFG
AEC-Q101
DS35694
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2SK1818-MR
Abstract: No abstract text available
Text: 2SK1818-MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET F- V SERIES Features Outline Drawings Include fast recovery diode TO-220F15 High voltage Low driving power Applications Motor controllers Inverters Choppers 2.54 3. Source JEDEC EIAJ SC-67 Equivalent circuit schematic
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2SK1818-MR
O-220F15
SC-67
2SK1818-MR
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BCS028N06NS
Abstract: 028N06NS DC1502
Text: DEMO MANUAL DC1502A LTC4359HDCB 12V/20A Ideal Diode with Reverse Input Protection DESCRIPTION Demonstration circuit 1502A showcases the LTC 4359 ideal diode controller with reverse input protection. The board includes two independent LTC4359 ideal diode circuits, sharing a common ground and operating over a
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DC1502A
LTC4359HDCB
2V/20A
LTC4359
dc1502af
BCS028N06NS
028N06NS
DC1502
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SC2420ISW
Abstract: NPN 1.5 AMPS POWER TRANSISTOR
Text: SC2420 BI-Phase/Dual Controller POWER MANAGEMENT Description Features The SC2420 can be configured as a dual converter or a bi-phase converter for high current applications. The part is designed for point of use power supplies with 8.5-14V nominal backplane power sources. The power dissipation is controlled using a novel low voltage supply technique, allowing high speed and integration, with the high
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SC2420
SC2420
SO-28
SC2420ISW
NPN 1.5 AMPS POWER TRANSISTOR
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77206-A7
Abstract: Magnetics 77206-A7 SC2420ISW 1N5819M 30BQ040 FDB7030BL SC2420 SC2420ISWTR 680uF 35V Schottky melf
Text: SC2420 BI-Phase/Dual Controller POWER MANAGEMENT Description Features The SC2420 can be configured as a dual converter or a bi-phase converter for high current applications. The part is designed for point of use power supplies with 10-14V nominal backplane power sources. The power dissipation is controlled using a novel low voltage supply technique, allowing high speed and integration, with the high
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SC2420
SC2420
0-14V
compensatSC2420
SO-28
77206-A7
Magnetics 77206-A7
SC2420ISW
1N5819M
30BQ040
FDB7030BL
SC2420ISWTR
680uF 35V
Schottky melf
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P channel MOSFET 10A schematic
Abstract: N and P MOSFET
Text: 2SK1086-M SIPMOS FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F - I I I S E R I E S • O utline D raw ings ■ Features • High current • Low o n-resistance • No secondary breakd ow n • Low driving p ow er • High fo rw a rd T ran scon d u ctan ce
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OCR Scan
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2SK1086-M
223fi
1086-M
P channel MOSFET 10A schematic
N and P MOSFET
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P channel MOSFET 10A schematic
Abstract: 2SK1086-MR 2sk1086 2sk1086 25 2sk1086m 2SK108
Text: 2SK1086-MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET F- III SERIES Outline Drawings Features High current Low on-resistance No secondary breakdown Low driving power High forward transconductance TO-220F15 Applications Motor controllers General purpose power amplifier
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2SK1086-MR
O-220F15
SC-67
P channel MOSFET 10A schematic
2SK1086-MR
2sk1086
2sk1086 25
2sk1086m
2SK108
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2SK1822-01MR
Abstract: 2sk1822
Text: 2SK1822-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-IIIA SERIES Outline Drawings Features High current Low on-resistance No secondary breakdown Low driving power High forward Transconductance Avalanche-proof Including G-S Zener diode TO-220F15
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2SK1822-01MR
O-220F15
SC-67
2SK1822-01MR
2sk1822
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LR 2703
Abstract: capacitor .47mf capacitor 47MF lr2703 panasonic diode capacitor 47MF 16v D05022P D05022P-332HC D03316p-102 capacitor 12v 33MF
Text: IRDC3046 IRU3046 EVALUATION BOARD USER GUIDE INTRODUCTION SPECIFICATION DATA The IRU3046 IC combines a dual synchronous PWM controller and a linear regulator controller, providing a cost-effective, high performance and flexible solution for multi-output applications. The dual synchronous controller can be configured as 2-independent or 2-phase controller. In 2-phase configuration, the IRU3046 provides
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IRDC3046
IRU3046
in-15)
in-14)
in-10)
in-11)
LR 2703
capacitor .47mf
capacitor 47MF
lr2703
panasonic diode
capacitor 47MF 16v
D05022P
D05022P-332HC
D03316p-102
capacitor 12v 33MF
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2SK1817-MR
Abstract: No abstract text available
Text: 2SK1817-MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET F- III SERIES Outline Drawings Features High current Low on-resistance No secondary breakdown Low driving power High forward transconductance TO-220F15 Applications Motor controllers General purpose power amplifier
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2SK1817-MR
O-220F15
SC-67
2SK1817-MR
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