Untitled
Abstract: No abstract text available
Text: TC2320 TC2320 N- and P- Channel Enhancement-Mode Dual MOSFET BVDSS/BVDGS N-Channel P-Channel 200V -200V RDS ON (max) N-Channel Order Number/Package P-Channel 7.0 SO-8 12 TC2320TG Features Low Threshold DMOS Technology ❑ Low threshold The Supertex TC2320TG consist of a high voltage low threshold Nchannel and P-channel MOSFET in an SO-8 package. These low
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TC2320
-200V
TC2320TG
TC2320TG
inherent00mA
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Untitled
Abstract: No abstract text available
Text: TC2320 TC2320 N- and P- Channel Enhancement-Mode Dual MOSFET BVDSS/BVDGS N-Channel P-Channel 200V -200V RDS ON (max) N-Channel 7.0 Order Number/Package P-Channel SO-8 12 TC2320TG Features Low Threshold DMOS Technology ❑ Low threshold The Supertex TC2320TG consist of a high voltage low threshold Nchannel and P-channel MOSFET in an SO-8 package. These low
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TC2320
-200V
TC2320TG
TC2320TG
i00mA
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TC2320TG
Abstract: ultrasound transducer circuit driver 1mhz TC2320 mosfet buffers output current 100mA
Text: TC2320 TC2320 N- and P- Channel Enhancement-Mode Dual MOSFET BVDSS/BVDGS N-Channel P-Channel 200V -200V RDS ON (max) N-Channel 7.0 Order Number/Package P-Channel SO-8 12 TC2320TG Features Low Threshold DMOS Technology ❑ Low threshold The Supertex TC2320TG consist of a high voltage low threshold Nchannel and P-channel MOSFET in an SO-8 package. These low
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TC2320
-200V
TC2320TG
TC2320TG
-200mA
ultrasound transducer circuit driver 1mhz
TC2320
mosfet buffers output current 100mA
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Untitled
Abstract: No abstract text available
Text: Supertexinc. TC2320 N- and P- Channel Enhancement-Mode Dual MOSFET BVpss/BV^ N-Channel P-Channel 200V -200V Order Number/Package ^DS ON ( m 8 X ) N-Channel 7.0 SO-8 P-Channel 12 TC2320TG Features Low Threshold DMOS Technology □ Low threshold □ Low on resistance
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OCR Scan
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-200V
TC2320TG
TC2320
TC2320TG
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TPC8404
Abstract: No abstract text available
Text: TPC8404 TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type P Channel π-MOSV/N Channel π-MOSV TPC8404 Motor Dreive Switching Regulator Applications • • Unit: mm Low drain-source ON resistance: P Channel RDS (ON) = 1.85 Ω (typ.) N Channel RDS (ON) = 1.2 Ω (typ.)
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TPC8404
-250V)
TPC8404
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TPC8404
Abstract: No abstract text available
Text: TPC8404 TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type P Channel π-MOSV/N Channel π-MOSV TPC8404 Motor Dreive Switching Regulator Applications • • Unit: mm Low drain-source ON resistance: P Channel RDS (ON) = 1.85 Ω (typ.) N Channel RDS (ON) = 1.2 Ω (typ.)
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TPC8404
-100A
-250V)
TPC8404
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100V 60A Mosfet
Abstract: 50V 60A MOSFET P-Channel 200V MOSFET MOSFET ESD Rated P-Channel 451 MOSFET Pchannel 15a 50v p-channel mosfet P-Channel 60V MOSFET P-Channel Enhancement-Mode
Text: POWER MOSFETs 4 P-CHANNEL POWER MOSFETs PAGE P-CHANNEL POWER MOSFET DATA SHEETS IRFU9110, IRFR9110 3.1A, 100V, Avalanche Rated, P-Channel Enhancement-Mode Power M O S F E T s . 4-3 IRFU9120, IRFR9120 5.6A, 100V, Avalanche Rated, P-Channel Enhancement-Mode Power M O S F E T s .
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OCR Scan
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IRFU9110,
IRFR9110
IRFU9120,
IRFR9120
IRFR9220,
IRFU9220
RFD8P06E,
RFD8P06ESM,
RFP8P06E
RFD15P05,
100V 60A Mosfet
50V 60A MOSFET
P-Channel 200V MOSFET
MOSFET ESD Rated
P-Channel
451 MOSFET
Pchannel
15a 50v p-channel mosfet
P-Channel 60V MOSFET
P-Channel Enhancement-Mode
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to-247 to-220 to-3p
Abstract: IXTA52P10P IXTA36P15P IXTN40P50P IXTQ52P10P sot-227 footprint IXTA10P50P ixtq IXTH10P50 IXTH10P50P
Text: IXYS POWER Efficiency through Technology N EW P RO D U C T B RIE F PolarPTM P-Channel Power MOSFETs Next Generation P-Channel Power MOSFETs -100V to -500V MAY 2008 OVERVIEW IXYS’ PolarP P-Channel Power MOSFETs are designed to bring a more cost-effective
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-100V
-500V
IXTA52P10P
FQB34P10
IXTA52P10P
-100V,
O-263
to-247 to-220 to-3p
IXTA36P15P
IXTN40P50P
IXTQ52P10P
sot-227 footprint
IXTA10P50P
ixtq
IXTH10P50
IXTH10P50P
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SFR9230B
Abstract: SFU9230B
Text: SFR9230B / SFU9230B 200V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to
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SFR9230B
SFU9230B
-200V,
SFU9230B
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SFR 252 diode
Abstract: No abstract text available
Text: SFR9230B / SFU9230B 200V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to
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SFR9230B
SFU9230B
-200V,
-200V
SFR9230
SFR9230BTM
SFR9230BTF
SFR 252 diode
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FQT3P20TF
Abstract: No abstract text available
Text: QFET TM FQT3P20 200V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
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FQT3P20
-200V,
OT-223
-200V
FQT3P20TF
OT-223
FQT3P20
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TC227
Abstract: No abstract text available
Text: [ /Title IRFR9 220, IRFU92 20 /Subject (3.6A, 200V, 1.500 Ohm, P-Channel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, PChannel Power MOSFETs, TO251AA, TO252AA) /Creator () /DOCI IRFR9220, IRFU9220 Semiconductor 3.6A, 200V, 1.500 Ohm, P-Channel Power MOSFETs
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IRFR9220,
IRFU9220
TA17502.
TC227
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FQT3P20
Abstract: No abstract text available
Text: QFET TM FQT3P20 200V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
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FQT3P20
-200V,
OT-223
FQT3P20
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Untitled
Abstract: No abstract text available
Text: QFET TM FQT3P20 200V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
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FQT3P20
-200V,
OT-223
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ZXMP2120E5
Abstract: ZXMP2120G4 ZXMP2120G4TA ZXMP2120G4TC
Text: ZXMP2120G4 200V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS =-200V; RDS(ON) = 25 ; ID = 200mA DESCRIPTION This 200V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high
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ZXMP2120G4
-200V;
200mA
OT23-5
ZXMP2120E5)
OT223
OT223
ZXMP2120E5
ZXMP2120G4
ZXMP2120G4TA
ZXMP2120G4TC
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ZXMP2120G4TA
Abstract: ZXMP2120G4TC ZXMP2120E5 ZXMP2120G4
Text: ZXMP2120G4 200V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS =-200V; RDS(ON) = 25 ; ID = 200mA DESCRIPTION This 200V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high
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ZXMP2120G4
-200V;
200mA
OT23-5
ZXMP2120E5)
OT223
OT223
ZXMP2120G4TA
ZXMP2120G4TC
ZXMP2120E5
ZXMP2120G4
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Untitled
Abstract: No abstract text available
Text: MCH6613 Ordering number : EN6920B SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFET MCH6613 General-Purpose Switching Device Applications Features • • • The MCH6613 incorporates two elements in the same package which are N-channel and P-channel low
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EN6920B
MCH6613
MCH6613
PW10s,
900movement,
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SFR9230B
Abstract: SFU9230B
Text: SFR9230B / SFU9230B SFR9230B / SFU9230B 200V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to
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SFR9230B
SFU9230B
-200V,
SFU9230B
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Untitled
Abstract: No abstract text available
Text: ZXMP2120E5 200V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS =-200V; RDS(ON) = 28 ; ID = -122mA DESCRIPTION This 200V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high
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ZXMP2120E5
-200V;
-122mA
OT223
ZXMP2120G4)
OT23-5
OT23-5
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Untitled
Abstract: No abstract text available
Text: ZXMP2120E5 200V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS =-200V; RDS(ON) = 28 ; ID = -122mA DESCRIPTION This 200V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high
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ZXMP2120E5
-200V;
-122mA
OT223
ZXMP2120G4)
OT23-5
OT23-5
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P120
Abstract: ZXMP2120E5 ZXMP2120E5TA ZXMP2120G4 FS50D
Text: ZXMP2120E5 200V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS =-200V; RDS(ON) = 28 ; ID = -122mA DESCRIPTION This 200V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high
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ZXMP2120E5
-200V;
-122mA
OT223
ZXMP2120G4)
OT23-5
OT23-5
P120
ZXMP2120E5
ZXMP2120E5TA
ZXMP2120G4
FS50D
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p-CHANNEL POWER MOSFET 600v
Abstract: IXTH20P50P IXTP28P065T 014 IR MOSFET Transistor P channel MOSFET 10A ixtq IXTA36P15P IXTA76P10T IXTH16P60P IXTK32P60P
Text: NEW PRO D U CT B RIEF Introducing P-Channel Power MOSFETs next generation p-channel power mosfets -50v to -600v SEPTEMBER 2008 OVERVIEW IXYS has reinforced its P-Channel Power MOSFET portfolio with the introduction of two advanced new families; TrenchPTM and PolarPTM. These families take
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-600v
-150V
p-CHANNEL POWER MOSFET 600v
IXTH20P50P
IXTP28P065T
014 IR MOSFET Transistor
P channel MOSFET 10A
ixtq
IXTA36P15P
IXTA76P10T
IXTH16P60P
IXTK32P60P
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FQP5P20
Abstract: No abstract text available
Text: FQP5P20 May 2000 QFET TM FQP5P20 200V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
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FQP5P20
-200V,
O-220
FQP5P20
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sot23-5 marking ha
Abstract: SOT23-5 TBA
Text: ZXMP2120E5 ADVANCE INFORMATION 200V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS =-200V; RDS(ON) = 28 ; ID = 150mA DESCRIPTION This 200V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high
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ZXMP2120E5
-200V;
150mA
OT223
ZXMP2120G4)
OT23-5
OT23-5
sot23-5 marking ha
SOT23-5 TBA
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