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    P-CHANNEL 250V POWER MOSFET Search Results

    P-CHANNEL 250V POWER MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    P-CHANNEL 250V POWER MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    p52 sot89

    Abstract: marking p52 SOT23-6 design ideas TS16949 ZVN4525Z ZVP4525Z ZVP4525ZTA ZVP4525ZTC complementary MOSFET sot89 p-channel mosfet sot89 5V
    Text: ZVP4525Z 250V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=-250V; RDS(ON)=14 ; ID=-205mA DESCRIPTION This 250V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced


    Original     		PDF ZVP4525Z -250V; -205mA OT223 OT23-6 ZVN4525Z D-81673 p52 sot89 marking p52 SOT23-6 design ideas TS16949 ZVN4525Z ZVP4525Z ZVP4525ZTA ZVP4525ZTC complementary MOSFET sot89 p-channel mosfet sot89 5V

    Untitled

    Abstract: No abstract text available
    Text: ZVP4525Z 250V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=-250V; RDS(ON)=14 ; ID=-205mA DESCRIPTION This 250V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced


    Original     		PDF ZVP4525Z -250V; -205mA OT223 OT23-6 ZVN4525Z D-81673

    MARKING TR SOT23-6 P MOSFET

    Abstract: ZVN4525G ZVP4525G ZVP4525GTA ZVP4525GTC
    Text: ZVP4525G 250V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=-250V; RDS(ON)=14V; ID=-265mA DESCRIPTION This 250V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced


    Original     		PDF ZVP4525G -250V; -265mA OT23-6 OT223 ZVN4525G OT223 hoo26100 MARKING TR SOT23-6 P MOSFET ZVN4525G ZVP4525G ZVP4525GTA ZVP4525GTC

    marking p52 mosfet

    Abstract: p52 sot89 p-channel 250V power mosfet c 103 mosfet MARKING TR SOT23-6 P MOSFET ZVN4525Z ZVP4525Z ZVP4525ZTA ZVP4525ZTC DSA0037423
    Text: ZVP4525Z 250V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY DESCRIPTION This 250V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced


    Original     		PDF ZVP4525Z OT223 OT23-6 ZVN4525Z marking p52 mosfet p52 sot89 p-channel 250V power mosfet c 103 mosfet MARKING TR SOT23-6 P MOSFET ZVN4525Z ZVP4525Z ZVP4525ZTA ZVP4525ZTC DSA0037423

    MARKING TR SOT23-6 P MOSFET

    Abstract: marking p52 SOT23-6 marking ma sot23-6 marking QG SOT23-6 marking p52 mosfet MARKING NB SOT23-6 4422 mosfet ZVN4525E6 ZVP4525E6 ZVP4525TA
    Text: ZVP4525E6 250V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY DESCRIPTION This 250V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced


    Original     		PDF ZVP4525E6 OT23-6 OT223 ZVN4525E6 OT23-6 MARKING TR SOT23-6 P MOSFET marking p52 SOT23-6 marking ma sot23-6 marking QG SOT23-6 marking p52 mosfet MARKING NB SOT23-6 4422 mosfet ZVN4525E6 ZVP4525E6 ZVP4525TA

    MOSFET N-CH 200V

    Abstract: MOSFET P-CH 250V 5A sd 150 zener diode STS1C1S250
    Text: STS1C1S250 N-CHANNEL 250V - 0.9Ω - 0.75A SO-8 P-CHANNEL 250V - 2.1Ω - 0.6A SO-8 MESH OVERLAY POWER MOSFET TYPE STS1C1S250 N-Channel STS1C1S250(P-Channel) • ■ ■ ■ VDSS RDS(on) ID 250 V 250 V <1.4Ω <2.8Ω 0.80 A 0.60 A TYPICAL RDS(on) (N-Channel) = 0.9 Ω


    Original     		PDF STS1C1S250 STS1C1S250 MOSFET N-CH 200V MOSFET P-CH 250V 5A sd 150 zener diode

    STS1C1S250

    Abstract: P-Channel MOSFET 120v dual zener diode 10v MOSFET N-CH 200V
    Text: STS1C1S250 N-CHANNEL 250V - 0.9Ω - 0.75A SO-8 P-CHANNEL 250V - 2.1Ω - 0.6A SO-8 MESH OVERLAY POWER MOSFET TYPE STS1C1S250 N-Channel STS1C1S250(P-Channel) • ■ ■ ■ VDSS RDS(on) ID 250 V 250 V <1.4Ω <2.8Ω 0.80 A 0.60 A TYPICAL RDS(on) (N-Channel) = 0.9 Ω


    Original     		PDF STS1C1S250 STS1C1S250 P-Channel MOSFET 120v dual zener diode 10v MOSFET N-CH 200V

    STS1C1S250

    Abstract: Zener Diode B1 9
    Text: STS1C1S250 N-CHANNEL 250V - 0.9Ω - 0.75A SO-8 P-CHANNEL 250V - 2.1Ω - 0.6A SO-8 MESH OVERLAY POWER MOSFET TYPE STS1C1S250 N-Channel STS1C1S250(P-Channel) • ■ ■ ■ VDSS RDS(on) ID 250 V 250 V <1.4Ω <2.8Ω 0.80 A 0.60 A TYPICAL RDS(on) (N-Channel) = 0.9 Ω


    Original     		PDF STS1C1S250 STS1C1S250 Zener Diode B1 9

    1E14

    Abstract: 2E12 FRL234R4 JANSR2N7278
    Text: JANSR2N7278 Formerly FRL234R4 4A, 250V, 0.700 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 4A, 250V, rDS ON = 0.700Ω The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Channel and P-Channel enhancement types with ratings from


    Original     		PDF JANSR2N7278 FRL234R4 1000K 1E14 2E12 FRL234R4 JANSR2N7278

    4422 mosfet

    Abstract: p-channel mosfet with diode sot89 MARKING TR SOT23-6 P MOSFET ZVN4525G ZVP4525G ZVP4525GTA ZVP4525GTC DSA0037419
    Text: ZVP4525G 250V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY DESCRIPTION This 250V enhancement mode N-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced


    Original     		PDF ZVP4525G OT223 OT23-6 ZVN4525G OT223 4422 mosfet p-channel mosfet with diode sot89 MARKING TR SOT23-6 P MOSFET ZVN4525G ZVP4525G ZVP4525GTA ZVP4525GTC DSA0037419

    Untitled

    Abstract: No abstract text available
    Text: JANSR2N7278 Formerly FRL234R4 4A, 250V, 0.700 Ohm, Rad Hard, N-Channel Power MOSFET January 2002 Features Description • 4A, 250V, rDS ON = 0.700Ω The Fairchild Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both NChannel and P-Channel enhancement types with ratings


    Original     		PDF JANSR2N7278 FRL234R4 1000K

    diode sd pd

    Abstract: No abstract text available
    Text: FQD4P25TM_WS / FQU4P25 October 27, 2011 FQD4P25TM_WS / FQU4P25 250V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FQD4P25TM FQU4P25 -250V, diode sd pd

    Untitled

    Abstract: No abstract text available
    Text: QFET FQP9P25 TM 250V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize


    Original     		PDF FQP9P25 -250V,

    Untitled

    Abstract: No abstract text available
    Text: QFET FQPF9P25 TM 250V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize


    Original     		PDF FQPF9P25 -250V,

    fqpf9P25

    Abstract: FQP9P25
    Text: QFET TM FQPF9P25 250V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize


    Original     		PDF FQPF9P25 -250V, fqpf9P25 FQP9P25

    FQAF9P25

    Abstract: No abstract text available
    Text: QFET TM FQAF9P25 250V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize


    Original     		PDF FQAF9P25 -250V, FQAF9P25

    Untitled

    Abstract: No abstract text available
    Text: QFET TM FQT2P25 250V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQT2P25 -250V, OT-223

    Untitled

    Abstract: No abstract text available
    Text: QFET TM FQT2P25 250V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQT2P25 -250V, OT-223 -250V FQT2P25TF OT-223 FQT2P25

    FQPF4P25

    Abstract: No abstract text available
    Text: QFET TM FQPF4P25 250V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize


    Original     		PDF FQPF4P25 -250V, O-220F FQPF4P25

    FQP4P25

    Abstract: No abstract text available
    Text: QFET TM FQP4P25 250V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize


    Original     		PDF FQP4P25 -250V, O-220 FQP4P25

    FQA9P25

    Abstract: No abstract text available
    Text: QFET TM FQA9P25 250V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize


    Original     		PDF FQA9P25 -250V, FQA9P25

    FQP9P25

    Abstract: No abstract text available
    Text: QFET TM FQP9P25 250V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize


    Original     		PDF FQP9P25 -250V, O-220 FQP9P25

    Untitled

    Abstract: No abstract text available
    Text: 33 JANSR2N7278 Formerly FRL234R4 4A, 250V, 0.700 Ohm, Rad Hard, N-Channel Power MOSFET Features Description • 4A, 250V, rDS ON = 0.700Q The Harris Semiconductor Sector has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Channel and P-Channel enhancement types with ratings


    OCR Scan     		PDF FRL234R4 JANSR2N7278 1000K MIL-STD-750, MIL-S-19500, 500ms;

    Untitled

    Abstract: No abstract text available
    Text: P *3 3 S IRF644, IRF645, IRF646, IRF647, RF1S644, RF1S644SM 13A and 14A, 250V and 275V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs January 1998 Description Features 13A and 14A, 250V and 275V High Input Impedance These are N-Channel enhancement mode silicon gate


    OCR Scan     		PDF IRF644, IRF645, IRF646, IRF647, RF1S644, RF1S644SM opera1S644,