AOP605
Abstract: AOP605L AOP605 Inverter MOSFET
Text: AOP605 Complementary Enhancement Mode Field Effect Transistor General Description Features n-channel p-channel -30V VDS V = 30V ID = 7.5A (VGS = 10V) -6.6A (VGS = -10V) The AOP605 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The
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AOP605
AOP605
AOP605L
AOP605 Inverter MOSFET
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STripFET
Abstract: STS3DPFS30
Text: STS3DPFS30 P - CHANNEL 30V - 0.065Ω - 3A - S0-8 MOSFET PLUS SCHOTTKY RECTIFIER STripFET PRELIMINARY DATA MAIN PRODUCT CHARACTERISTICS MOSFET V DSS R DS on ID 30V 0.09Ω 3A SCHOTTKY IF(AV) V RRM V F(MAX) 3A 30V 0.51V SO-8 DESCRIPTION: This product associates the latest low voltage
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STS3DPFS30
STripFET
STS3DPFS30
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P Channel STripFET
Abstract: STripFET STS3DPFS30 mosfet p channel 30v 3a
Text: STS3DPFS30 P - CHANNEL 30V - 0.065Ω - 3A - S0-8 MOSFET PLUS SCHOTTKY RECTIFIER STripFET PRELIMINARY DATA MAIN PRODUCT CHARACTERISTICS MOSFET V DSS R DS on ID 30V 0.09Ω 3A SCHOTTKY IF(AV) V RRM V F(MAX) 3A 30V 0.51V SO-8 DESCRIPTION: This product associates the latest low voltage
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STS3DPFS30
P Channel STripFET
STripFET
STS3DPFS30
mosfet p channel 30v 3a
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STripFET
Abstract: STS3DPFS30L
Text: STS3DPFS30L P - CHANNEL 30V - 0.13Ω - 3A S0-8 MOSFET PLUS SCHOTTKY RECTIFIER STripFET PRELIMINARY DATA MAIN PRODUCT CHARACTERISTICS MOSFET V DSS R DS on ID 30V <0.16Ω 3A SCHOTTKY IF(AV) V RRM V F(MAX) 3A 30V 0.51V SO-8 DESCRIPTION: This product associates the latest low voltage
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STS3DPFS30L
STripFET
STS3DPFS30L
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MI3403
Abstract: iss 400 SOT233 iss-400 diode MI34 mi340
Text: MI3403 P -Channel 30 V D-S MOSFET Features General Description This miniature surface monut MOSFET uses V DS (V) = -30V advanced trench process , low R DS(on) assures minimal power loss and energy conversion , which makes this device ideal for use in power
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MI3403
OT-23
MI3403
O-236.
OT233-071012
iss 400
SOT233
iss-400 diode
MI34
mi340
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STS3DPFS30L
Abstract: No abstract text available
Text: STS3DPFS30L P - CHANNEL 30V - 0.13Ω - 3A S0-8 MOSFET PLUS SCHOTTKY RECTIFIER STripFET PRELIMINARY DATA MAIN PRODUCT CHARACTERISTICS MOSFET V DSS R DS on 30V <0.16Ω 3A SCHOTTKY IF (A V) V RRM V F(M AX) 3A 30V 0.51V ID SO-8 DESCRIPTION: This product associates the latest low voltage
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STS3DPFS30L
STS3DPFS30L
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STS3DPFS30
Abstract: mosfet p channel 30v 3a
Text: STS3DPFS30 P - CHANNEL 30V - 0.065Ω - 3A - S0-8 MOSFET PLUS SCHOTTKY RECTIFIER STripFET PRELIMINARY DATA MAIN PRODUCT CHARACTERISTICS MOSFET V DSS R DS on 30V 0.09Ω 3A SCHOTTKY IF (A V) V RRM V F(M AX) 3A 30V 0.51V ID SO-8 DESCRIPTION: This product associates the latest low voltage
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STS3DPFS30
STS3DPFS30
mosfet p channel 30v 3a
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SSM4509GM
Abstract: No abstract text available
Text: SSM4509GM N- AND P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Simple drive requirement N-CH BV DSS D2 D2 D1 D2 D1 D1 D1 Low on-resistance Fast switching characteristic SO-8 30V 14mΩ R DS ON ID G2 G2 S2 G1 S2 S1 G1 S1 10A P-CH BVDSS -30V RDS(ON) Description
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SSM4509GM
SSM4509GM
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STS3DPFS30
Abstract: No abstract text available
Text: STS3DPFS30 P - CHANNEL ENHANCEMENT MODE POWER MOSFET PLUS SCHOTTKY RECTIFIER TARGET DATA MAIN PRODUCT CHARACTERISTICS MOSFET V DSS R DS on ID 30V 0.09Ω 3A SCHOTTKY IF(AV) V RRM V F(MAX) 3A 30V 0.44V SO-8 DESCRIPTION: This product associates the latest low voltage
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STS3DPFS30
STS3DPFS30
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STM2DPFS30L
Abstract: max8823
Text: STM2DPFS30L P - CHANNEL 30V - 0.145Ω - 2A MiniS0-8 STripFET MOSFET PLUS SCHOTTKY RECTIFIER PRELIMINARY DATA MAIN PRODUCT CHARACTERISTICS MOSFET V DSS R DS on ID 30V <0.165Ω 2A SCHOTTKY IF (A V) V RRM V F(M AX) 1A 40V 0.55V MiniSO-8 DESCRIPTION:
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STM2DPFS30L
STM2DPFS30L
max8823
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SSM4532M
Abstract: No abstract text available
Text: SSM4532M COMPLEMENTARY N AND P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS N-ch Simple drive requirement BV D2 Low on-resistance G2 S2 SO-8 50mΩ R DS ON D2 D1 D1 Fast switching +30V DSS S1 P-ch G1 Description ID +5A BV DSS -30V RDS(ON) 70mΩ ID MOSFETs from Silicon Standard Corp. provide the
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SSM4532M
SSM4532M
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Untitled
Abstract: No abstract text available
Text: WTK4435 Surface Mount P-Channel Enhancement Mode MOSFET 8 7 6 D 3 S 5 D 4 G -10 AMPERES DRAIN SOURCE VOLTAGE D S 2 Features: DRAIN CURRENT D S 1 P b Lead Pb -Free -30 VOLTAGE * Super high dense * Cell design for extremely low R DS(ON) * -30V/-10A,R DS(ON)<30mΩ@VGS = -10V
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WTK4435
-30V/-10A
-30V/-7A
WTK4435,
09-Jan-2014
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Untitled
Abstract: No abstract text available
Text: DMP3028LSD 30V DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Description • • • • • • This new generation MOSFET has been designed to minimize the onstate resistance RDS(ON and yet maintain superior switching Mechanical Data V(BR)DS
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DMP3028LSD
DS35966
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4957gm
Abstract: No abstract text available
Text: Advanced Power Electronics Corp. AP4957GM-HF-3 Dual P-channel Enhancement-mode Power MOSFETs Simple Drive Requirement BVDSS -30V Low On-resistance R DS ON 24mΩ Fast Switching Performance ID -7.7A RoHS-compliant, halogen-free D2 D1 G2 G1 Description S2 S1
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AP4957GM-HF-3
AP4957GM-HF-3
AP4957
4957GM
4957gm
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SSM4407GM
Abstract: 4407gm 4407 MARKING CODE SO-8
Text: SSM4407GM P-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY BVDSS -30V R DS ON 14mΩ ID -10.7A DESCRIPTION The SSM4407GM acheives fast switching performance with low gate charge without a complex drive circuit. It is suitable for low voltage applications such as DC/DC
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SSM4407GM
SSM4407GM
4407GM
330mm)
4407gm
4407
MARKING CODE SO-8
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Untitled
Abstract: No abstract text available
Text: Advanced Power Electronics Corp. AP2625GY-HF-3 Dual P-channel Enhancement-mode Power MOSFET Independent, Symmetrical Dual MOSFETs BV DSS Low Gate Charge D2 D1 Low Gate Drive -30V R DS ON 185mΩ ID RoHS-compliant, halogen-free -2A G2 G1 S1 Description S2
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AP2625GY-HF-3
OT-26
OT-26
12REF
37REF
90REF
20REF
95REF
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SSM9435GM
Abstract: 9435GM mosfet 9435GM ssm9435 marking codes transistors SSs 9435g 24v 6A mosfet MOSFET code 9435gm
Text: SSM9435GM P-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY BVDSS -30V R DS ON 50mΩ ID -5.3A DESCRIPTION The SSM9435GM acheives fast switching performance with low gate charge without a complex drive circuit. It is suitable for low voltage applications such as battery
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SSM9435GM
SSM9435GM
9435GM
330mm)
9435GM
mosfet 9435GM
ssm9435
marking codes transistors SSs
9435g
24v 6A mosfet
MOSFET code 9435gm
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Mosfet
Abstract: SSF3365
Text: SSF3365 30V P-Channel MOSFET D DESCRIPTION The SSF3365 uses advanced trench technology to provide excellent R DS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.
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SSF3365
SSF3365
OT-23
950TYP
550REF
Mosfet
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45N03L
Abstract: FP45N03L F45N03L RFP45N03L 014E3 f45n 03LSM
Text: CIS H A R R IS RFP45N03L, RF1S45N03L, RF1S45N03LSM 45A, 30V, Avalanche Rated N-Channel Logic Level Enhancement-Mode Power MOSFETs December 1995 Packages Features JEDEC TO-220AB • 4 5 A , 30V • r DS ON = 0.022SJ • Tem perature C o m p e n s a tin g PS PICE Model
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RFP45N03L,
RF1S45N03L,
RF1S45N03LSM
O-220AB
022SJ
O-262AA
61e-13
06e-3
57e-6
16e-9
45N03L
FP45N03L
F45N03L
RFP45N03L
014E3
f45n
03LSM
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Untitled
Abstract: No abstract text available
Text: TAIWAN SEMICONDUCTOR s TSM3455 30V P-Channel MOSFET bl RoHS CO M PLIANCE SO T-26 654 PRODUCT SUM M ARY Pin Definition; 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source V DS V R Ds(on)(mQ) b (A) 100 @ Vcs = -10V -3.5 170 @ VGS= -4.5V -2.7 -30 1 23 Features
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TSM3455
3455C
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tsm3455
Abstract: No abstract text available
Text: s TAIW AN TSM3455 SEMICONDUCTOR 30V P-Channel MOSFET b RoHS CO M PLIANCE SO T-26 654 PRODUCT SUM M ARY Pin Definition; 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source V DS V) R Ds(on)(mQ) b (A) 100 @ Vcs = -10V -3.5 1 70 @ VGS = -4.5V -2.7 -30 1 23
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TSM3455
3455C
tsm3455
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IRF9410
Abstract: No abstract text available
Text: International I"R Rectifier P D -9.1562A PRELIMINARY IRF9410 HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance N-Channel MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fully Avalanche Rated V dss = 30V R ds oh = 0.030É2
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IRF9410
IRF7403
IRF7413
IRF7603
IRF9410
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IRF7416
Abstract: No abstract text available
Text: PD - 9.1356D International IO R Rectifier IRF7416 HEXFET Power MOSFET • • • • • • • Generation V Technology Ultra Low On-Resistance P-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Voss = -30V ^DS on =
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1356D
IRF7416
IRF7416
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diode sy 171 10
Abstract: "DIODE" SY 171 1 g
Text: PD - 9.12 64 C International IOR Rectifier IRF7606 HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile <1.1 mm Available in Tape & Reel Fast Switching V qss = -30V f^DS(on) = 0.09Î2
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EIA-541.
diode sy 171 10
"DIODE" SY 171 1 g
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