1E14
Abstract: 2E12 FRL9230D FRL9230H FRL9230R
Text: FRL9230D, FRL9230R, FRL9230H 3A, -200V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 3A, -200V, RDS on = 1.30Ω TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current
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Original
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FRL9230D,
FRL9230R,
FRL9230H
-200V,
O-205AF
100KRAD
300KRAD
1000KRAD
3000KRAD
1E14
2E12
FRL9230D
FRL9230H
FRL9230R
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PDF
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Rad Hard in Fairchild for MOSFET
Abstract: 1E14 2E12 FRL9230D FRL9230H FRL9230R
Text: FRL9230D, FRL9230R, FRL9230H 3A, -200V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Title RL9 0D, L92 R, L92 H bt A, 0V, m, d rd, anwer OSTs) utho eyrds terrpoon, minctor, ,0V, m, d rd, Features Package • 3A, -200V, RDS on) = 1.30Ω TO-205AF
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Original
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FRL9230D,
FRL9230R,
FRL9230H
-200V,
O-205AF
100KRAD
300KRAD
1000KRAD
3000KRAD
Rad Hard in Fairchild for MOSFET
1E14
2E12
FRL9230D
FRL9230H
FRL9230R
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PDF
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TPS27081ADRV
Abstract: powerdiod
Text: TPS27081A www.ti.com SLVSBE9 – APRIL 2012 8V, 3A P-Channel High Side Load Switch with Level Shift & Adjustable Slew Rate Control Check for Samples: TPS27081A FEATURES 1 • • • • • • • • • Low ON Resistance, High current PFET – RDS ON = 32mΩ (Typ) at VGS = –4.5V,
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Original
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TPS27081A
TPS27081ADRV
powerdiod
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PDF
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2E12
Abstract: 2N7311D 2N7311H 2N7311R
Text: S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRL9230 D, R, H 2N7311D, 2N7311R 2N7311H Radiation Hardened P-Channel Power MOSFETs November 1994 Features Package • 3A, -200V, RDS(on) = 1.30Ω TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts
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Original
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FRL9230
2N7311D,
2N7311R
2N7311H
-200V,
O-205AF
100KRAD
300KRAD
1000KRAD
3000KRAD
2E12
2N7311D
2N7311H
2N7311R
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PDF
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AN-8831
Abstract: 2E12 2N7280D 2N7280H 2N7280R 3E12 2N728
Text: S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRM430 D, R, H 2N7280D, 2N7280R 2N7280H Radiation Hardened N-Channel Power MOSFETs November 1994 Features Package • 3A, 500V, RDS(on) = 2.50Ω TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts
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Original
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FRM430
2N7280D,
2N7280R
2N7280H
O-204AA
100KRAD
300KRAD
1000KRAD
3000KRAD
Neutrons/cm38
AN-8831
2E12
2N7280D
2N7280H
2N7280R
3E12
2N728
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PDF
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denso
Abstract: No abstract text available
Text: < Dual-In-Line Package Intelligent Power Module > PSM03S93E5-A TRANSFER MOLDING TYPE INSULATED TYPE OUTLINE MAIN FUNCTION AND RATINGS 3 phase DC/AC inverter 500V / 3A MOSFET N-side MOSFET open source Built-in bootstrap diodes with current limiting resistor
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Original
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PSM03S93E5-A
240Vrms
denso
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PDF
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2SK2182
Abstract: F3F50VX2
Text: SHINDENGEN VX-2 Series Power MOSFET 2SK2182 F3F50VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : FTO-220 Case E-pack (Unit : mm) 500V 3A FEATURES ● Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ● The static Rds(on) is small.
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Original
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2SK2182
F3F50VX2)
FTO-220
2SK2182
F3F50VX2
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PDF
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CY2LL8423
Abstract: CY2LL8423OI CY2LL8423OIT CY2LL8423ZC CY2LL8423ZCT CY2LL8423ZI CY2LL8423ZIT
Text: ComLink Series CY2LL8423 High-drive Dual 2-Channel LVDS Repeater/Mux Features Description • ANSI TIA/EIA-644-1995-compliant • Designed for data rates to > 650 Mbps = 325 MHz • Single 2 x 2 with high-drive output drivers — Low-voltage Differential Signaling with output
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Original
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CY2LL8423
TIA/EIA-644-1995-compliant
50-ohm
350-mV
28-pin
CY2LL8423
CY2LL8423OI
CY2LL8423OIT
CY2LL8423ZC
CY2LL8423ZCT
CY2LL8423ZI
CY2LL8423ZIT
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PDF
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CY2LL8423
Abstract: CY2LL8423OI CY2LL8423ZC CY2LL8423ZCT CY2LL8423ZI CY2LL8423ZIT 4Y42 S11y
Text: 8423 COMLINK SERIES CY2LL8423 High Drive Dual 2-Channel LVDS Repeater/Mux Features Description • ANSI TIA/EIA-644-1995 compliant • Designed for data rates to > 650 Mbps = 325 MHz • Single 2x2 with high drive output drivers — Low Voltage Differential Signaling with output voltages of ± 350 mV into 50-ohm load version (Bus
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Original
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CY2LL8423
TIA/EIA-644-1995
50-ohm
28-pin
CY2LL8423
CY2LL8423OI
CY2LL8423ZC
CY2LL8423ZCT
CY2LL8423ZI
CY2LL8423ZIT
4Y42
S11y
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PDF
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Untitled
Abstract: No abstract text available
Text: y*Rg*s FRL9230D, FRL9230R, FRL9230H 3A, -200V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 3A, -200V, RDS on = 1.30£i TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)
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OCR Scan
|
FRL9230D,
FRL9230R,
FRL9230H
-200V,
O-205AF
100KRAD
300KRAD
1000KRAD
3000KRAD
|
PDF
|
Untitled
Abstract: No abstract text available
Text: JANSR2N7402 33 M ÄRE» Formerly FSS430R4 3A, 500V, 2.70 Ohm, Rad Hard, N-Channel Power MOSFET June1998 Features Description • 3A, 500V, rDS 0N = 2.70Q T h e D is c re te P ro d u c ts O p e ra tio n o f H a rris S e m ic o n d u c to r ha s d e v e lo p e d a s e rie s o f R a d ia tio n H a rd e n e d M O S F E T s
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OCR Scan
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FSS430R4
e1998
JANSR2N7402
MIL-STD-750,
MIL-S-19500,
100ms;
500ms;
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PDF
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Untitled
Abstract: No abstract text available
Text: HARRIS SENICOND SECTOR m HARRIS SEMICONDUCTOR REGISTRATION PENDING Currently Available as FRL9230 D, R, H SflE D • 4305271 0045787 540 H H A S 2N7311D, 2N7311H 2N7311H Radiation Hardened P-Channel Power MOSFETs December 1992 l ° l Package Features • 3A, -200V, RDS(on) > 1.30Q
|
OCR Scan
|
FRL9230
2N7311D,
2N7311H
-200V,
O-205AF
100KRAD
300KRAD
1000KRAD
3000KRAD
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ì li h a r r is U U S E M I C O N D U C T O R FRL9230D, FRL9230R, FRL9230H 3A, -200V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 3 A, -200V, RDS on = 1.30i! TO-2Q5AF • Second Generation Rad Hard MOSFET Results From New Design Concepts
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OCR Scan
|
FRL9230D,
FRL9230R,
FRL9230H
-200V,
100KRAD
300KRAD
1000KRAD
3000KRAD
732UIS
|
PDF
|
Untitled
Abstract: No abstract text available
Text: îsï h a r r is U U FRX9130D, FRX9130R E S E M IC O N D U C T O R H •# O / l I_ l Radiation Hardened P-Channel Power MOSFETs june 1994 Package Features • V 3A, -100V, RDS on = 0.550il LCC 18 PIN • Second Generation Rad Hard MOSFET Results From New Design Concepts
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OCR Scan
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FRX9130D,
FRX9130R
-100V,
550il
100KRAD
300KRAD
1000KRAD
3000KRAD
35MeV/
43D2271
|
PDF
|
|
|
m430p
Abstract: pt 4115 EQUIVALENT m430u
Text: so HARRIS S E M I C O N D U C T O R FRM430D, FRM430R, FRM430H 3A, 500V, 2.50 Ohm, Rad Hard, N-Channe Power MOSFETs June 1998 Features Package • 3A, 500V, RDS(on = 2.50Q TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma
|
OCR Scan
|
FRM430D,
FRM430R,
FRM430H
O-204AA
100KRAD
300KRAD
1000KRAD
3000KRAD
M430U1S
M430PH0
m430p
pt 4115 EQUIVALENT
m430u
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PDF
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS3VS-10 HIGH-SPEED SWITCHING USE FS3VS-10 OUTLINE DRAWING Dimensions in mm •st q w e ■V 6 +i CD Q w r oj q w e r GATE DRAIN SOURCE DRAIN V d s s .500V
|
OCR Scan
|
FS3VS-10
O-22QS
57KH23
|
PDF
|
Untitled
Abstract: No abstract text available
Text: m a r r is 2N7282D, 2N7282R 21^72Ö2'H S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRS430 D, R, H Radiation Hardened N-Channel Power MOSFETs November 1994 Package Features • 3A, 500V, RDS(on) = 2.52ft TO-257AA • Second Generation Rad Hard MOSFET Results From New Design Concepts
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OCR Scan
|
2N7282D,
2N7282R
O-257AA
FRS430
100KRAD
300KRAD
1000KRAD
3000KRAD
-257AA
|
PDF
|
44i2
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET j FS3UM-10 j HIGH-SPEED SWITCHING USE I FS3UM-10 • VOSS . 500V • ros ON (MAX) . 4.4Í2
|
OCR Scan
|
FS3UM-10
FS3UM-10
5711K2
44i2
|
PDF
|
g6n50e
Abstract: HGTD6N50E1S G6N40E G6N50 flange terminal 25C1 HGTD6N40E1 HGTD6N40E1S HGTD6N50E1
Text: HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, HGTD6N50E1S H A R R IS S E M I C O N D U C T O R 6A, 400V and 500V N-Channel IGBTs March 1997 Packages Features HGTD6N40E1, HGTD6N50E1 JEDEC TO-251AA • 6A, 400V and 500V • V ce ON : 2.5V Max. EM ITTER • T f a l l 1 1 -0 ^3
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OCR Scan
|
HGTD6N40E1,
HGTD6N40E1S,
HGTD6N50E1,
HGTD6N50E1S
HGTD6N50E1S
HGTD6N40E1
O-251AA
g6n50e
G6N40E
G6N50
flange terminal
25C1
HGTD6N40E1S
HGTD6N50E1
|
PDF
|
Untitled
Abstract: No abstract text available
Text: m a r r is 2N7280D, 2N7280R S E M I C O N D U C T O R 2 REGISTRATION PENDING Currently Available as FRM430 D, R, H November 1994 1 ^ 7 2 R a d iatio n H a rd e n e d N -C h a n n e l P o w e r M O S FE Ts Package Features • 3A, 500V, RDS(on) = 2.50ft TO-204AA
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OCR Scan
|
2N7280D,
2N7280R
FRM430
100KRAD
300KRAD
1000KRAD
3000KRAD
|
PDF
|
FS3KM-10
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS3KM-10 HIGH-SPEED SWITCHING USE FS3KM-10 OUTLINE DRAWING Dimensions in mm 10 ± 0.3 2.8 ± 0.2 • VDSS . 500V • rDS ON (MAX) . 4 .4 0
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OCR Scan
|
FS3KM-10
FS3KM-10
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS5UM-10 HIGH-SPEED SWITCHING USE FS5UM-10 OUTLINE DRAWING Dimensions in mm LU U q w Q w r V d s s .500V q w e r GATE DRAIN SOURCE DRAIN rDS ON (MAX) .1 8Í1
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OCR Scan
|
FS5UM-10
O-220
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ili H U U a r r is S E M I C O N D U C T O R FRS430D, FRS430R, FFÍS430H 3A, 500V, 2.52 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Package Features • 3A, 500V, RDS on = 2.S2C1 TO-257AA • Second Generation Rad Hard MOSFET Results From New Design Concepts
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OCR Scan
|
FRS430D,
FRS430R,
S430H
O-257AA
300KRAD
1000KRAD
3000KRAD
AN-8831,
|
PDF
|
K1244
Abstract: 2SK1244 F3V50 K124
Text: VXvU -X /\°7 - M 0 SFET ¡S58* VX Series Power MOSFET OUTLINE DIMENSIONS 2SK1244 [F3V50 500V 3A ex *3 B Ciss) ft'/jvcriv Ule-tía; u 7XBcda*S*ô'/JÆU>o • T .- !" •ACl 0 0 V *A ^ X -f e ^ > K - i? • Æ tëÜ RATINGS Absolute Maximum Ratings «
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OCR Scan
|
2SK1244
F3V50)
O-220
-K1244
K1244
2SK1244
F3V50
K124
|
PDF
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