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    P-CHANNEL M21 Search Results

    P-CHANNEL M21 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP293-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), DC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TLP294-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), AC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TLP295-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), DC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TLP292-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), AC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TLP291-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), DC input, 2500 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation

    P-CHANNEL M21 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    M2106

    Abstract: APM2106 APM2106SG STD-020C apm21
    Text: APM2106SG Dual Enhancement Mode MOSFET N-and P-Channel Pin Description Features • D2 N-Channel D2 D1 D1 30V/3.2A, RDS(ON)= 60mΩ(typ.) @ VGS= 10V G2 S2 G1 S1 RDS(ON)= 85mΩ(typ.) @ VGS= 4.5V • P-Channel -30V/-2.2A, RDS(ON)= 105mΩ(typ.) @ VGS= -10V


    Original     		APM2106SG -30V/-2 JSC70-8 M2106 APM2106 APM2106SG STD-020C apm21 PDF

    p-channel m21

    Abstract: No abstract text available
    Text: Data Sheet PA2815T1S P-channel MOS FIELD EFFECT TRANSISTOR R07DS0777EJ0100 Rev.1.00 Jun 01, 2012 Description The μPA2815T1S is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. Features


    Original     		PA2815T1S R07DS0777EJ0100 PA2815T1S PA2815T1S-E2-AT p-channel m21 PDF

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet µPA2815T1S P-channel MOS FIELD EFFECT TRANSISTOR R07DS0777EJ0100 Rev.1.00 Jun 01, 2012 Description The µPA2815T1S is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. Features


    Original     		PA2815T1S R07DS0777EJ0100 PA2815T1S PA2815T1S-E2-AT PDF

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet PA2815T1S P-channel MOSFET R07DS0777EJ0101 Rev.1.01 May 28, 2013 –30 V, –21 A, 11 mΩ Description The μPA2815T1S is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment.


    Original     		PA2815T1S R07DS0777EJ0101 PA2815T1S PA2815T1S-E2-AT PDF

    APM2104

    Abstract: APM2104SG M2104 STD-020C apm21
    Text: APM2104SG Dual Enhancement Mode MOSFET N- and P-Channel Pin Description Features • N-Channel 20V/3.5A, RDS(ON)=45mΩ(typ.) @ VGS=4.5V RDS(ON)=60mΩ(typ.) @ VGS=2.5V RDS(ON)=90mΩ(typ.) @ VGS=1.8V • P-Channel S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2


    Original     		APM2104SG -20V/-2 JSC70-8 MIL-STD-883D-2003 883D-1005 JESD-22-B, 883D-1011 APM2104 APM2104SG M2104 STD-020C apm21 PDF

    APM2103SG

    Abstract: STD-020C p channel mosfet
    Text: APM2103SG Dual P-Channel Enhancement Mode MOSFET Features • Pin Description -20V/-2.5A RDS ON = 88mΩ(typ.) @ VGS= -4.5V RDS(ON)= 120mΩ (typ.) @ VGS= -2.5V RDS(ON)= 160mΩ (typ.) @ VGS= -1.8V • • Super High Dense Cell Design Reliable and Rugged P Channel MOSFET


    Original     		APM2103SG -20V/-2 JSC70-8 APM2103 APM2103SG STD-020C p channel mosfet PDF

    CX20549

    Abstract: RICOH R5C832 BCM5906M CX20549-12Z 49D9R2F-GP 6268P amd am2 6000 pin diagram G546A2P1UF-GP ISL6255HRZ WPC8765
    Text: 5 4 3 2 1 PCB Layer Stackup A-NOTE 2.0 Block Diagram D Project Code:91.4T001.001 Layers:6 PCB P/N: 06235-SA AMD CPU CLK GEN ICS951412 NPT Processor Rev. G S1 package 4,5,6,7 3 DDRII 800M Channel A DDRII Slot 0 667/800 DDRII 800M Channel B DDRII Slot 1 667/800


    Original     		4T001 06235-SA ICS951412 16b/8b ISL6255 ISL6268 TV-OUT14 RS690 SCD1U10V2KX-4GP SCD01U16V2KX-3GP CX20549 RICOH R5C832 BCM5906M CX20549-12Z 49D9R2F-GP 6268P amd am2 6000 pin diagram G546A2P1UF-GP ISL6255HRZ WPC8765 PDF

    SiS968

    Abstract: kb3925 asus SIS672 ICS9LPR600CGLF-T ICS9LPR600 T1733 SST25VF080B BIOS 78L05 88E8056
    Text: 5 4 3 2 CPU 1 ITP CONN. Z62Ha MEROM CLOCK GEN Socket-P D ICS 9LPR600C VRAM DDR2 32MX16M X4 D FSB 800MHz/533MHz LCD CRT LVDS ATI GPU M72-S RGB 632 BGA PCI-E 16X DDR CLOCK BUFFER NORTH BRIDGE DDR2 single Channel-1 DDR2 667MHz/533MHz DDR2 single Channel-2 Internal KB


    Original     		9LPR600C Z62Ha 32MX16M 800MHz/533MHz 9P935AF MAX6657MSA M72-S SIS672 667MHz/533MHz SiS968 kb3925 asus SIS672 ICS9LPR600CGLF-T ICS9LPR600 T1733 SST25VF080B BIOS 78L05 88E8056 PDF

    APM2321

    Abstract: APM2321A M21X STD-020C
    Text: APM2321A P-Channel Enhancement Mode MOSFET Pin Description Features • -20V/-1.2A , RDS ON =370mΩ (typ.) @ VGS=-4.5V RDS(ON)=560mΩ (typ.) @ VGS=-2.5V • • • Super High Dense Cell Design Reliable and Rugged Top View of SOT-23 Lead Free Available (RoHS Compliant)


    Original     		APM2321A -20V/-1 OT-23 APM2321 APM2321 APM2321A M21X STD-020C PDF

    Untitled

    Abstract: No abstract text available
    Text: APM2103QA Dual P-Channel Enhancement Mode MOSFET Features • Pin Description D1 -20V/-2.5A D1 D2 D2 RDS ON = 88mΩ(typ.) @ VGS= -4.5V RDS(ON)= 120mΩ (typ.) @ VGS= -2.5V S1 RDS(ON)= 160mΩ (typ.) @ VGS= -1.8V • • Super High Dense Cell Design G1 S2


    Original     		APM2103QA -20V/-2 APM2103 Devi0-2000 PDF

    VE880

    Abstract: LE88311 sumida c8100 MBT3946DW1T1LRG LE88311DLC IIR NEON le88331 MURS120DICT-ND VE880 "pin compatible" rft rg1
    Text: A D V A N C E D C O P Y Le88311/331 Dual Channel Tracking Battery VoicePort™ Device VE880 Series APPLICATIONS „ „ „ „ „ ORDERING INFORMATION Voice enabled Cable and DSL Modems Voice over IP/ATM - Integrated Access Devices IAD Residential VoIP Gateways and Routers


    Original     		Le88311/331 VE880 Le88311/331 LE88311 sumida c8100 MBT3946DW1T1LRG LE88311DLC IIR NEON le88331 MURS120DICT-ND VE880 "pin compatible" rft rg1 PDF

    Untitled

    Abstract: No abstract text available
    Text: APM2321A P-Channel Enhancement Mode MOSFET Pin Description Features • -20V/-1.2A , D RDS ON =370mΩ(typ.) @ VGS=-4.5V RDS(ON)=560mΩ(typ.) @ VGS=-2.5V • • • G Super High Dense Cell Design S Reliable and Rugged Top View of SOT-23 Lead Free Available (RoHS Compliant)


    Original     		APM2321A -20V/-1 OT-23 APM2321 PDF

    Untitled

    Abstract: No abstract text available
    Text: APM2101SG P-Channel Enhancement Mode MOSFET Pin Description Features • D -20V/-3.5A, D D RDS ON = 48mΩ(typ.) @ VGS= -4.5V D RDS(ON)= 75mΩ(typ.) @ VGS= -2.5V G RDS(ON)= 135mΩ(typ.) @ VGS= -1.8V • • • S Super High Dense Cell Design S S Reliable and Rugged


    Original     		APM2101SG -20V/-3 JSC70-8 APM2101 MIL-STD-883D-2003 883D-1005 JESD-22-B, 883D-1011 PDF

    sis*307elv

    Abstract: 9lpr600 SiS307ELV 88E8056 SIS 672 Sis 968 south bridge SIS 968 Asus PT116 slb9635
    Text: 5 4 3 2 CPU 1 ITP CONN. Z62H MEROM Socket-P CLOCK GEN ICS 9LPR600 D FSB 667MHz/533MHz LVDS LCD SiS 307 ELV HDV Bus VBus RGB CRT D DDR CLOCK BUFFER THERMAL SENSOR ICS 9P935AF NORTH BRIDGE DDR2 Single Channel MAX6657MSA DDR2 SO-DIMM0 DDR2 667MHz/533MHz SiS 672


    Original     		9LPR600 667MHz/533MHz 9P935AF MAX6657MSA 667MHz/533MHz 133MHz TPA6017A2 SLB9635 ENE3925 sis*307elv 9lpr600 SiS307ELV 88E8056 SIS 672 Sis 968 south bridge SIS 968 Asus PT116 slb9635 PDF

    sis*307elv

    Abstract: south bridge SIS 968 Sis 968 SiS307ELV asus 9LPR600 88E8056 SIS 672 sis m672 SIS672
    Text: 5 4 3 2 CPU 1 ITP CONN. Z62H MEROM Socket-P CLOCK GEN ICS 9LPR600 D FSB 667MHz/533MHz LVDS LCD SiS 307 ELV HDV Bus VBus RGB CRT D DDR CLOCK BUFFER THERMAL SENSOR ICS 9P935AF NORTH BRIDGE DDR2 Single Channel MAX6657MSA DDR2 SO-DIMM0 DDR2 667MHz/533MHz SiS 672


    Original     		9LPR600 667MHz/533MHz 9P935AF MAX6657MSA 667MHz/533MHz 133MHz TPA6017A2 SLB9635 ENE3925 sis*307elv south bridge SIS 968 Sis 968 SiS307ELV asus 9LPR600 88E8056 SIS 672 sis m672 SIS672 PDF

    KB910 B4

    Abstract: LAD1 12v 8 pin relay LS252 CPR-187 compal n52 smd mark Socket AM2 Compal Electronics BC381 ACES-85205-0400L
    Text: 5 4 3 2 1 COMPAL CONFIDENTIAL D MODEL NAME : EGQ00 COMPAL P/N : PCB NO : Revision : 2.0 D EGQ00 Schematics Document C C uFCBGA/uFCPGA Mobile Dothan ATI RS300MD + SB200 2 Channel DDR1 2005-01-11 REV : 2.0 B B Function/B LS-2522 M/B LA-2522 WLAN SW/B LS-2524


    Original     		EGQ00 RS300MD SB200 LS-2522 LA-2522 LS-2524 LS-2523 LA-2521 AO4912) KB910 B4 LAD1 12v 8 pin relay LS252 CPR-187 compal n52 smd mark Socket AM2 Compal Electronics BC381 ACES-85205-0400L PDF

    WPC8763L

    Abstract: stac9228x5 realtek rtm875m f8 vga nb8p TPS5117 RTM875M-606-LF max8731ae SLG8SP513V MLX-CON10-6-GP-U transformer EC28
    Text: A B C D E BATTERY CHARGER Hawke Intel Discrete Block Diagram CLK GEN 1 ICS9LPRS365 Project code PCB P/N PCB No. Revision Intel Mobile CPU 4 Merom 4M FSB:667 or 800 MHz 5, 6, 7 VRAM 16Mbx32x2 CRT 17 RGB CRT LCD 18 LVDS 51 GDDRIII 700MHz 2 DDRII 667 Channel A


    Original     		MAX8731A ICS9LPRS365 4W101 TPS51120 16Mbx32x2 TPS5117 700MHz WPC8763L stac9228x5 realtek rtm875m f8 vga nb8p TPS5117 RTM875M-606-LF max8731ae SLG8SP513V MLX-CON10-6-GP-U transformer EC28 PDF

    CB714BF

    Abstract: pn234 CB714 KB910LQF LA-3091P aos3401 Alviso JCPU1A FCM2012CF-800T06 2N27B VT6311S
    Text: 5 4 3 2 1 COMPAL CONFIDENTIAL D MODEL NAME : Biathlon IBM 15R COMPAL P/N : HEL00 PCB NO : LA-3091P Revision : 1.0 D C C IBM 15R Schematics Document uFCBGA/uFCPGA Mobile Dothan Alviso 915+ ICH6-M 2 Channel DDR2 B B 2005-12-20 REV : 1.0 SW LED/B LS-3093P M/B LA-3091P


    Original     		HEL00 LA-3091P LS-3093P LA-3091P LS-3094P LS-3092P LA-3091 CB714BF pn234 CB714 KB910LQF aos3401 Alviso JCPU1A FCM2012CF-800T06 2N27B VT6311S PDF

    G545B1

    Abstract: g5243 mq5 sensor G545B1P8U ICS9LPRS365B T61 fuse f4 ac2 cn1 150 1p0 quanta at2 IT8512E BC48
    Text: 5 4 3 PE2 2 CPU CPU Thermal Sensor 1 01 P3 Penryn BlOCK DIAGRAM CLOCK GEN ICS9LPRS365 u-FCPGA 479PIN P3,4 SOCKET-P P2 D D FSB 1066/800/667 MHZ Battery DDR II CHANNEL A DDRII SO-DIMM P11 DC In NB 667/800 MHZ CRT DDC2B CRT 1x LVDS 667/800 MHZ P10 LCD 1329 PIN micro FCBGA


    Original     		479PIN ICS9LPRS365 15-Pin RTL8102EL RJ-45 MBPB3004010 C1000 1u/10V C1001 G545B1 g5243 mq5 sensor G545B1P8U ICS9LPRS365B T61 fuse f4 ac2 cn1 150 1p0 quanta at2 IT8512E BC48 PDF

    M21353

    Abstract: M21453G-13 M21363 35H40 M21353G m2136
    Text: M21353 4.25 Gbps Twelve-Channel Backplane Equalizer and Driver with 12x12 Crosspoint Switch The M21353 is a twelve channel device designed to enable the transmission of multi-gigabit serial data through the most challenging environments. The device features twelve independent, programmable equalizers that


    Original     		M21353 12x12 M21353 21353-DSH-001-B M21453G-13 M21363 35H40 M21353G m2136 PDF

    lfh 1001

    Abstract: M21330
    Text: M21330 4.25 Gbps Quad-Channel Cable Driver and Adaptive Equalizer with 4x4 Crosspoint Switch The M21330 is a quad channel device designed to enable the transmission of multi gigabit serial data through the most challenging environments. The device features four independent adaptive equalizers that automatically


    Original     		M21330 M21330 21330-DSH-001-A lfh 1001 PDF

    GM300

    Abstract: CM602 ft06 transistor C633 FSP400 2n1763 C621 DA402 2N2458 transistor c640 npn
    Text: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k IB H H TYPE No. MAX. 1 hFE II MIN. MAX Pc T6TT ABSOiLOTE MAX. RATIINGS Ä25C


    OCR Scan     		NPN110. THP172 TIS11 TIX690 Pc-50mW; BVCBO-50V BVGSS-30V Yfs-800umhos 500mW; TIX881 GM300 CM602 ft06 transistor C633 FSP400 2n1763 C621 DA402 2N2458 transistor c640 npn PDF

    2SK19Y

    Abstract: C682 2SK19GR X70a FSP400 40468 C621 K1202 C682A C684
    Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I


    OCR Scan     		NPN110. THP172 TIS11 TIX690 Pc-50mW; BVCBO-50V BVGSS-30V Yfs-800umhos 500mW; TIX881 2SK19Y C682 2SK19GR X70a FSP400 40468 C621 K1202 C682A C684 PDF

    Untitled

    Abstract: No abstract text available
    Text: 7 ^ 2 3 7 hü GGMbBbM SIS •SGTH SGS-THOMSON ilLËOT «! STP5N50 STP5N50FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP5N 50 STP5N 50FI Vd ss R ds oii Id 500 V 500 V < 1.6 Í2 < 1.6 £2 4 .5 A 3 A ■ T Y P IC A L RDS(on) = 1 .4 £2 . ■


    OCR Scan     		STP5N50 STP5N50FI 004tj27D STP5N50/FI PDF