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    P-CHANNEL MOSFET Search Results

    P-CHANNEL MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TPN4800CQH Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 150 V, 18 A, 0.048 Ω@10 V, TSON Advance Visit Toshiba Electronic Devices & Storage Corporation
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    P-CHANNEL MOSFET Price and Stock

    ROHM Semiconductor VT6M1T2CR

    MOSFETs 1.2V Drive Nch+Pch MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI VT6M1T2CR Reel 8,000
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    • 10000 $0.059
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    ROHM Semiconductor RZM002P02T2L

    MOSFETs TRANS MOSFET P-CH 20V 0.2A TR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI RZM002P02T2L Reel 8,000
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    • 10000 $0.042
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    ROHM Semiconductor RSM002P03T2L

    MOSFETs P-CH 30V 200MA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI RSM002P03T2L Reel 8,000
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    • 10000 $0.113
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    P-CHANNEL MOSFET Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    sot-363 n-channel mosfet

    Abstract: sot-363 p-channel mosfet Dual N-Channel mosfet sot-363 marking code 12 SOT-363 amplifier high current sot-363 p-channel mosfet MARKING 3C5 CMKDM3590 Dual P-Channel mosfet sot-363 SOT-363 marking th CMKDM3575
    Text: Central CMKDM3590 N-CH/N-CH CMKDM7590 P-CH/P-CH CMKDM3575 N-CH/P-CH SURFACE MOUNT N-CHANNEL AND P-CHANNEL DUAL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS TM Semiconductor Corp. DESCRIPTION: These CENTRAL SEMICONDUCTOR devices are combinations of dual N-Channel and P-Channel


    Original     		CMKDM3590 CMKDM7590 CMKDM3575 OT-363 CMKDM3590: CMKDM7590: CMKDM3575: RATI150 CMKDM7590 sot-363 n-channel mosfet sot-363 p-channel mosfet Dual N-Channel mosfet sot-363 marking code 12 SOT-363 amplifier high current sot-363 p-channel mosfet MARKING 3C5 Dual P-Channel mosfet sot-363 SOT-363 marking th PDF

    Untitled

    Abstract: No abstract text available
    Text: TC2320 TC2320 N- and P- Channel Enhancement-Mode Dual MOSFET BVDSS/BVDGS N-Channel P-Channel 200V -200V RDS ON (max) N-Channel 7.0 Order Number/Package P-Channel SO-8 12 TC2320TG Features Low Threshold DMOS Technology ❑ Low threshold The Supertex TC2320TG consist of a high voltage low threshold Nchannel and P-channel MOSFET in an SO-8 package. These low


    Original     		TC2320 -200V TC2320TG TC2320TG i00mA PDF

    Untitled

    Abstract: No abstract text available
    Text: Supertexinc. TC2320 N- and P- Channel Enhancement-Mode Dual MOSFET BVpss/BV^ N-Channel P-Channel 200V -200V Order Number/Package ^DS ON ( m 8 X ) N-Channel 7.0 SO-8 P-Channel 12 TC2320TG Features Low Threshold DMOS Technology □ Low threshold □ Low on resistance


    OCR Scan     		-200V TC2320TG TC2320 TC2320TG PDF

    MOSFET P-channel SOT-23

    Abstract: Power MOSFET N-Channel sot-23 CMPDM7590 C759 CMPDM3590 C359 sot-23 P-Channel MOSFET MOSFET P channel SOT-23 P-Channel SOT-23 Power MOSFET
    Text: Central CMPDM3590 N-CH CMPDM7590 P-CH TM Semiconductor Corp. SURFACE MOUNT N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPDM3590 and CMPDM7590 are complementary N-Channel and P-Channel Enhancement-mode silicon MOSFETs


    Original     		CMPDM3590 CMPDM7590 CMPDM3590 OT-23 CMPDM3590: CMPDM7590: 200mA MOSFET P-channel SOT-23 Power MOSFET N-Channel sot-23 C759 C359 sot-23 P-Channel MOSFET MOSFET P channel SOT-23 P-Channel SOT-23 Power MOSFET PDF

    marking code R

    Abstract: MARKING CODE W
    Text: Central CMBDM3590 N-CH CMBDM7590 P-CH TM Semiconductor Corp. SURFACE MOUNT N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMBDM3590 and CMBDM7590 are complementary N-Channel and P-Channel Enhancement-mode silicon MOSFETs


    Original     		CMBDM3590 CMBDM7590 CMBDM3590: CMBDM7590: OT-923 200mA CMBDM7590 marking code R MARKING CODE W PDF

    CMUDM7590

    Abstract: on semiconductor marking code sot CMUDM3590
    Text: Central CMUDM3590 N-CH CMUDM7590 P-CH TM Semiconductor Corp. SURFACE MOUNT N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUDM3590 and CMUDM7590 are complementary N-Channel and P-Channel Enhancement-mode silicon MOSFETs


    Original     		CMUDM3590 CMUDM7590 CMUDM3590 OT-523 CMUDM3590: CMUDM7590: 200mA CMUDM7590 on semiconductor marking code sot PDF

    CMSDM7590

    Abstract: marking CODE 75C Complementary MOSFETs logic level complementary MOSFET
    Text: Central CMSDM3590 N-CH CMSDM7590 P-CH TM Semiconductor Corp. SURFACE MOUNT N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMSDM3590 and CMSDM7590 are complementary N-Channel and P-Channel Enhancement-mode silicon MOSFETs


    Original     		CMSDM3590 CMSDM7590 CMSDM3590 OT-323 CMSDM3590: CMSDM7590: 200mA marking CODE 75C Complementary MOSFETs logic level complementary MOSFET PDF

    si3529

    Abstract: Si3529DV SI3529DV-T1-E3
    Text: Si3529DV New Product Vishay Siliconix N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N Channel N-Channel P Channel P-Channel rDS(on) (W) 0.125 @ VGS = 10 V 2.250 0.165 @ VGS = 4.5 V 1.95 0.215 @ VGS = –10 V –1.76 0.335 @ VGS = –4.5 V


    Original     		Si3529DV Si3529DV-T1--E3 51448--Rev. 01-Aug-05 si3529 SI3529DV-T1-E3 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiA519EDJ Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) () ID (A) • TrenchFET Power MOSFETs • Typical ESD Protection: N-Channel 2000 V P-Channel 1000 V • 100 % Rg Tested


    Original     		SiA519EDJ SC-70-6 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    KTA 3-25

    Abstract: SSM6E01TU SSM6E
    Text: SSM6E01TU TOSHIBA Multi-Chip Device Silicon P-Channel MOS Type U-MOS II + N-Channel MOS Type (Planer) SSM6E01TU Load Switch Applications Unit: mm • P-channel MOSFET and N-channel MOSFET incorporated into one package. · Low power dissipation due to P-channel MOSFET that features low


    Original     		SSM6E01TU KTA 3-25 SSM6E01TU SSM6E PDF

    Untitled

    Abstract: No abstract text available
    Text: SSM6E01TU TOSHIBA Multi-Chip Device Silicon P-Channel MOS Type U-MOS II + N-Channel MOS Type (Planer) SSM6E01TU Load Switch Applications Unit: mm • P-channel MOSFET and N-channel MOSFET incorporated into one package. • Low power dissipation due to P-channel MOSFET that features low


    Original     		SSM6E01TU PDF

    Untitled

    Abstract: No abstract text available
    Text: SiA519EDJ Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) () ID (A) • TrenchFET Power MOSFETs • Typical ESD Protection: N-Channel 2000 V P-Channel 1000 V • 100 % Rg Tested


    Original     		SiA519EDJ SC-70-6 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiA519EDJ Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) () ID (A) • TrenchFET Power MOSFETs • Typical ESD Protection: N-Channel 2000 V P-Channel 1000 V • 100 % Rg Tested


    Original     		SiA519EDJ SC-70-6 SiA533EDJ-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SSM6E01TU TOSHIBA Multi-Chip Device Silicon P-Channel MOS Type U-MOS II + N-Channel MOS Type (Planer) SSM6E01TU Load Switch Applications Unit: mm • P-channel MOSFET and N-channel MOSFET incorporated into one package. • Low power dissipation due to P-channel MOSFET that features low


    Original     		SSM6E01TU PDF

    p channel de mosfet

    Abstract: list of P channel power mosfet Si4567DY si4567
    Text: Si4567DY New Product Vishay Siliconix N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N Channel N-Channel P Channel P-Channel ID (A)a 0.060 @ VGS = 10 V 5.0 0.070 @ VGS = 4.5 V 4.7 0.085 @ VGS = –10 V –4.4 0.122 @ VGS = –4.5 V –3.7


    Original     		Si4567DY Si4567DY-T1--E3 08-Apr-05 p channel de mosfet list of P channel power mosfet si4567 PDF

    Untitled

    Abstract: No abstract text available
    Text: FDD8424H Dual N & P-Channel PowerTrench MOSFET N-Channel: 40V, 20A, 24mΩ P-Channel: -40V, -20A, 54mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement „ Max rDS on = 24mΩ at VGS = 10V, ID = 9.0A MOSFETs are produced using Fairchild Semiconductor’s


    Original     		FDD8424H PDF

    Untitled

    Abstract: No abstract text available
    Text: FDS8958B Dual N & P-Channel PowerTrench MOSFET Q1-N-Channel: 30 V, 6.4 A, 26 mΩ Q2-P-Channel: -30 V, -4.5 A, 51 mΩ Features General Description Q1: N-Channel These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor's


    Original     		FDS8958B com/dwg/M0/M08A PDF

    FDS8858CZ

    Abstract: fds8858
    Text: FDS8858CZ Dual N & P-Channel PowerTrench MOSFET N-Channel: 30V, 8.6A, 17.0mΩ P-Channel: -30V, -7.3A, 20.5mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement „ Max rDS on = 17mΩ at VGS = 10V, ID = 8.6A MOSFETs are produced using Fairchild Semiconductor’s


    Original     		FDS8858CZ FDS8858CZ fds8858 PDF

    Untitled

    Abstract: No abstract text available
    Text: FDS8958B Dual N & P-Channel PowerTrench MOSFET Q1-N-Channel: 30 V, 6.4 A, 26 mΩ Q2-P-Channel: -30 V, -4.5 A, 51 mΩ Features General Description Q1: N-Channel These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor's


    Original     		FDS8958B FDS8958B PDF

    FDS8858

    Abstract: No abstract text available
    Text: FDS8858CZ Dual N & P-Channel PowerTrench MOSFET N-Channel: 30V, 8.6A, 17.0mΩ P-Channel: -30V, -7.3A, 20.5mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement ̈ Max rDS on = 17mΩ at VGS = 10V, ID = 8.6A MOSFETs are produced using Fairchild Semiconductor’s


    Original     		FDS8858CZ FDS8858 PDF

    amplifier marking code a c8g

    Abstract: CMLDM8120 C81 diode
    Text: Central CMLDM8120 CMLDM8120G* SURFACE MOUNT PICOminiTM P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET TM Semiconductor Corp. DESCRIPTION: These CENTRAL SEMICONDUCTOR devices are Enhancement-mode P-Channel Field Effect Transistors, manufactured by the P-Channel DMOS Process,


    Original     		CMLDM8120 CMLDM8120G* CMLDM8120: OT-563 8120G* amplifier marking code a c8g CMLDM8120 C81 diode PDF

    Si4569DY-T1-E3

    Abstract: si4569 SI4569DY
    Text: Si4569DY New Product Vishay Siliconix N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N Channel N-Channel P Channel P-Channel ID (A)a 0.027 at VGS = 10 V 6.0 0.032 at VGS = 4.5 V 4.8 0.029 at VGS = –10 V –6.0 0.039 at VGS = –4.5 V


    Original     		Si4569DY Si4569DY-T1--E3 18-Jul-08 Si4569DY-T1-E3 si4569 PDF

    CMUDM8001

    Abstract: CMUDM7001 on SOT523 Power mosfet transistor sot P-channel MOSFET VGS -25V mosfet low idss mosfet low vgs
    Text: CMUDM8001 SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUDM8001 is an Enhancement-mode P-Channel Field Effect Transistor, manufactured by the P-Channel DMOS Process, designed


    Original     		CMUDM8001 CMUDM8001 OT-523 100mA CMUDM7001 on SOT523 Power mosfet transistor sot P-channel MOSFET VGS -25V mosfet low idss mosfet low vgs PDF

    MOSFET P-channel SOT-23

    Abstract: 80v P-Channel MOSFET C8120 "Marking code" 2A SOT-23 p-channel sot-23 p-channel SOT-23 20V MOSFET SOT-23
    Text: CMPDM8120 SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPDM8120 is an Enhancement-mode P-Channel Field Effect Transistor, manufactured by the P-Channel DMOS Process, designed


    Original     		CMPDM8120 CMPDM8120 C8120 OT-23 360mA 810mA 950mA 25-July MOSFET P-channel SOT-23 80v P-Channel MOSFET C8120 "Marking code" 2A SOT-23 p-channel sot-23 p-channel SOT-23 20V MOSFET SOT-23 PDF