Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UF9520S Preliminary POWER MOSFET -6.8A, -100V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UF9520S is a P-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance.
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UF9520S
-100V
UF9520S
O-220F1
UF9520SL-TF1-T
UF9520SG-TF1-T
QW-R502-892
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT120P06 Power MOSFET 120A, 60V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT120P06 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance. It can also
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UTT120P06
UTT120P06
UTT120P06L-TA3-T
UTT120P06G-TA3-T
UTT120P06L-TQ2-T
UTT120P06G-TQ2-T
UTT120P06L-TQ2-R
UTT120P06G-TQ2-R
QW-R502-728
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p-channel Mosfet 110A
Abstract: UTT120P06
Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT120P06 Power MOSFET 120A, 60V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT120P06 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance. It can also
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UTT120P06
UTT120P06
O-220
UTT120P06L-TA3-T
UTT120P06G-TA3-T
QW-R502-728
p-channel Mosfet 110A
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Untitled
Abstract: No abstract text available
Text: PD - 90437D POWER MOSFET THRU-HOLE MO-036AB IRFG5110 100V, Combination 2N-2P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFG5110 IRFG5110 RDS(on) 0.7Ω 0.7Ω ID 1.0A -1.0A CHANNEL N P HEXFET® MOSFET technology is the key to International
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90437D
MO-036AB)
IRFG5110
150mH,
-100V,
MO-036AB
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SUM110P04-04L
Abstract: p-channel Mosfet 110A SUM110P04-04L SPICE Device Model
Text: SPICE Device Model SUM110P04-04L Vishay Siliconix P-Channel 40-V D-S 175° MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SUM110P04-04L
0-to-10V
27-Oct-03
SUM110P04-04L
p-channel Mosfet 110A
SUM110P04-04L SPICE Device Model
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SUM110P06-07L
Abstract: p-channel Mosfet 110A
Text: SPICE Device Model SUM110P06-07L Vishay Siliconix P-Channel 60-V D-S 175° MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SUM110P06-07L
0-to-10V
14-Nov-03
SUM110P06-07L
p-channel Mosfet 110A
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Untitled
Abstract: No abstract text available
Text: PD - 9.1260D International IGR Rectifier IRLML5103 HEXFET Power MOSFET • • • • • • • Generation V Technology Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching VDss = -30 V
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OCR Scan
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OT-23
1260D
IRLML5103
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PDF
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IRLML5103
Abstract: sot23 footprint
Text: Previous Datasheet Index Next Data Sheet PD - 9.1260A IRLML5103 PRELIMINARY HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching VDSS = -30V RDS(on) = 0.60Ω
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IRLML5103
OT-23
incorp00
IRLML5103
sot23 footprint
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IRF7416
Abstract: No abstract text available
Text: Previous Datasheet Index Next Data Sheet PD - 9.1356A PRELIMINARY IRF7416 HEXFET Power MOSFET Generation V Technology l Ultra Low On-Resistance l P-Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description
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IRF7416
IRF7416
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Untitled
Abstract: No abstract text available
Text: UNISONICTECHNOLOGIESCO., LTD UTT120P06 Preliminary Power MOSFET 1 2 0 A, 6 0 V P-CH AN N EL POWER M OSFET ̈ DESCRI PT I ON The UTC UTT120P06 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance. It can also
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UTT120P06
UTT120P06
UTT120P06L-TA3-T
UTT120P06G-TA3-T
QW-R502-728
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0 281 002 507
Abstract: No abstract text available
Text: SUM110P08-11 New Product Vishay Siliconix P-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A)b Qg (Typ) –80 0.0111@ VGS = –10 V –110 113 nC D TrenchFETr Power MOSFET APPLICATIONS D Automotive such as: – High Side Switch
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SUM110P08-11
O-263
08-Apr-05
0 281 002 507
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0 281 002 507
Abstract: SUM110P08-11 SUM110P08-11 rev 51507
Text: SUM110P08-11 New Product Vishay Siliconix P-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A)b Qg (Typ) –80 0.0111@ VGS = –10 V –110 113 nC D TrenchFETr Power MOSFET APPLICATIONS D Automotive such as: – High Side Switch
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SUM110P08-11
O-263
51507--Rev.
15-Aug-05
0 281 002 507
SUM110P08-11
SUM110P08-11 rev
51507
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SUM110P04-05
Abstract: No abstract text available
Text: SUM110P04-05 New Product Vishay Siliconix P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET VDS (V) rDS(on) (W) ID (A)a Qg (Typ) –40 0.005 @ VGS = –10 V –110 185 nC APPLICATIONS RoHS D Automotive – Motor Drives – Fuel Injection
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SUM110P04-05
O-263
SUM110P04-05--E3
08-Apr-05
SUM110P04-05
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Untitled
Abstract: No abstract text available
Text: SUM110P04-05 New Product Vishay Siliconix P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET VDS (V) rDS(on) (W) ID (A)a Qg (Typ) –40 0.005 @ VGS = –10 V –110 185 nC APPLICATIONS RoHS D Automotive – Motor Drives – Fuel Injection
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SUM110P04-05
O-263
SUM110P04-05â
08-Apr-05
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1RF9520
Abstract: diode S68a 68A diode IRF9520S UI5 321 IRF9520 ScansUX102 d68a SMD MARKING "68A"
Text: P D -9.319G International ire 1Rectifier IRF9520 HEXFET® Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements ^D S S -
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IRF9520
-100V
O-220
T0-220
1RF9520S
1RF9520
diode S68a
68A diode
IRF9520S
UI5 321
ScansUX102
d68a
SMD MARKING "68A"
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IRL*5103
Abstract: p-channel Mosfet 110A IRLMS6803 IRLML5103PBF
Text: PD - 94894 IRLML5103PbF HEXFET Power MOSFET l l l l l l l l Generation V Technology Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching Lead-Free D VDSS = -30V G RDS(on) = 0.60Ω S Description
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IRLML5103PbF
OT-23
EIA-481
EIA-541.
IRL*5103
p-channel Mosfet 110A
IRLMS6803
IRLML5103PBF
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Untitled
Abstract: No abstract text available
Text: PD - 96165A IRLML5103GPbF HEXFET Power MOSFET l l l l l l l l l Generation V Technology Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching Lead-Free Halogen-Free G 1 VDSS = -30V 3 D S
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6165A
IRLML5103GPbF
OT-23
EIA-481
EIA-541.
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SUM110P08-11L
Abstract: SUM110P08 SUM110P08-11L-E3 SUM110P0811L SUM110P08-11L rev
Text: SUM110P08-11L New Product Vishay Siliconix P-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) –80 80 ID (A)b rDS(on) (W) 0.0112 @ VGS = –10 V –110 0.0145 @ VGS = –4.5 V –109 D TrenchFETr Power MOSFET Qg (Typ) APPLICATIONS 85 nC RoHS D Automotive such as:
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SUM110P08-11L
O-263
SUM110P08-11L
08-Apr-05
SUM110P08
SUM110P08-11L-E3
SUM110P0811L
SUM110P08-11L rev
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IRLML5103GPBF
Abstract: No abstract text available
Text: PD - 96165A IRLML5103GPbF HEXFET Power MOSFET l l l l l l l l l Generation V Technology Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching Lead-Free Halogen-Free G 1 VDSS = -30V 3 D S
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6165A
IRLML5103GPbF
OT-23
EIA-481
EIA-541.
IRLML5103GPBF
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PDF
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Untitled
Abstract: No abstract text available
Text: SUM110P08-11L New Product Vishay Siliconix P-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) –80 80 ID (A)b rDS(on) (W) 0.0112 @ VGS = –10 V –110 0.0145 @ VGS = –4.5 V –109 D TrenchFETr Power MOSFET Qg (Typ) APPLICATIONS 85 nC RoHS D Automotive such as:
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SUM110P08-11L
O-263
SUM110P08-11Lâ
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: PD - 94894A IRLML5103PbF HEXFET Power MOSFET l l l l l l l l Generation V Technology Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching Lead-Free G 1 VDSS = -30V 3 D S RDS(on) = 0.60Ω
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4894A
IRLML5103PbF
OT-23
EIA-481
EIA-541.
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IRLML2402
Abstract: No abstract text available
Text: PD - 94894 IRLML5103PbF HEXFET Power MOSFET l l l l l l l l Generation V Technology Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching Lead-Free D VDSS = -30V G RDS(on) = 0.60Ω S Description
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IRLML5103PbF
OT-23
EIA-481
EIA-541.
IRLML2402
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SUM110P08-11L
Abstract: SUM110P08-11L-E3 SUM110P0811L SUM110P08
Text: New Product SUM110P08-11L Vishay Siliconix P-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)b 0.0112 at VGS = - 10 V - 110 0.0145 at VGS = - 4.5 V - 109 VDS (V) - 80 Qg (Typ) • TrenchFET Power MOSFET RoHS COMPLIANT 85 nC TO-263 S
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SUM110P08-11L
O-263
SUM110P08-11L-E3
18-Jul-08
SUM110P08-11L
SUM110P08-11L-E3
SUM110P0811L
SUM110P08
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72194
Abstract: No abstract text available
Text: New Product SUM110P08-11L Vishay Siliconix P-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)b 0.0112 at VGS = - 10 V - 110 0.0145 at VGS = - 4.5 V - 109 VDS (V) - 80 Qg (Typ) • TrenchFET Power MOSFET RoHS COMPLIANT 85 nC TO-263 S
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SUM110P08-11L
O-263
SUM110P08-11L-E3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
72194
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