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    P-CHANNEL MOSFET 2N Search Results

    P-CHANNEL MOSFET 2N Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TPN4800CQH Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 150 V, 18 A, 0.048 Ω@10 V, TSON Advance Visit Toshiba Electronic Devices & Storage Corporation

    P-CHANNEL MOSFET 2N Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2N7336

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR 2N7336 TECHNICAL DATA DATA SHEET 692, REV. - HERMETIC POWER MOSFET COMBINATION N-CHANNEL / P-CHANNEL QUAD 2 EACH DESCRIPTION: 100 VOLT, 1.0 AMP, 0.70 OHM MOSFET IN A HERMETIC CERAMIC 14 PIN DIP. MAXIMUM RATINGS-N/P - CHANNEL RATING


    Original     		2N7336 2N7336 PDF

    Untitled

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR 2N7336 TECHNICAL DATA DATA SHEET 692, REV. - HERMETIC POWER MOSFET COMBINATION N-CHANNEL / P-CHANNEL QUAD 2 EACH DESCRIPTION: 100 VOLT, 1.0 AMP, 0.70 OHM MOSFET IN A HERMETIC CERAMIC 14 PIN DIP. MAXIMUM RATINGS-N/P - CHANNEL RATING


    Original     		2N7336 250mA FOR25 CER-DIP-14 PDF

    p12p10

    Abstract: IRF9530* p-channel power MOSFET 2N6898 Power MOSFETs Field-Effect Transistors IRFP9140/P9141 irf9640 mosfet IRF9530 P-channel power p-channel irfp9240
    Text: - POWER MOSFETs 5 P-CHANNEL POWER MOSFETs PAGE 2N6804 Avalanche Energy Rated P-Channel Power M OSFET. 5-3 2N6849 Avalanche Energy Rated P-Channel Power MOSFET. 5-8 2N6851


    OCR Scan     		2N6804 2N6849 2N6851 2N6895 2N6896 2N6897 2N6898 IRF9130, IRF9131, IRF9132, p12p10 IRF9530* p-channel power MOSFET Power MOSFETs Field-Effect Transistors IRFP9140/P9141 irf9640 mosfet IRF9530 P-channel power p-channel irfp9240 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate MOSFETS CJ7252KDW N Channel + P Channel Power MOSFET SOT-363 DESCRIPTION This N Channel + P Channel MOSFET has been designed using advanced power trench process to optimize the RDS ON .


    Original     		OT-363 CJ7252KDW OT-363 2N7002K CJ502K PDF

    2N6851

    Abstract: No abstract text available
    Text: 2N6851 Dimensions in mm inches . P-Channel MOSFET in a Hermetically sealed TO39 Metal Package. 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. P-Channel MOSFET.


    Original     		2N6851 O205AF) 11-Oct-02 2N6851 PDF

    2N6845 JANTX

    Abstract: 2N6845
    Text: 2N6845 Dimensions in mm inches . P-Channel MOSFET in a Hermetically sealed TO39 Metal Package. 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. P-Channel MOSFET.


    Original     		2N6845 O205AF) 11-Oct-02 2N6845 JANTX 2N6845 PDF

    2N6849 JANS

    Abstract: 2n6849 jantxv 2N6849 p-channel MOSFET 100V
    Text: 2N6849 Dimensions in mm inches . P-Channel MOSFET in a Hermetically sealed TO39 Metal Package. 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. P-Channel MOSFET.


    Original     		2N6849 O205AF) 11-Oct-02 2N6849 JANS 2n6849 jantxv 2N6849 p-channel MOSFET 100V PDF

    2N6847

    Abstract: 2N6847 JANTXV
    Text: 2N6847 Dimensions in mm inches . P-Channel MOSFET in a Hermetically sealed TO39 Metal Package. 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. P-Channel MOSFET.


    Original     		2N6847 O205AF) 11-Oct-02 2N6847 2N6847 JANTXV PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 91664B IRFG5210 POWER MOSFET 200V, Combination 2N-2P-CHANNEL THRU-HOLE MO-036AB HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFG5210 IRFG5210 RDS(on) 1.6Ω 1.6Ω ID 0.68A -0.68A CHANNEL N P HEXFET® MOSFET technology is the key to International


    Original     		91664B IRFG5210 MO-036AB) 276mH, 475mH, -200V, MO-036AB PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 90437D POWER MOSFET THRU-HOLE MO-036AB IRFG5110 100V, Combination 2N-2P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFG5110 IRFG5110 RDS(on) 0.7Ω 0.7Ω ID 1.0A -1.0A CHANNEL N P HEXFET® MOSFET technology is the key to International


    Original     		90437D MO-036AB) IRFG5110 150mH, -100V, MO-036AB PDF

    68A diode

    Abstract: MJ 68A IRFG5210 MO-036AB 4.5v to 100v input regulator
    Text: PD - 91664B IRFG5210 POWER MOSFET 200V, Combination 2N-2P-CHANNEL THRU-HOLE MO-036AB HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFG5210 IRFG5210 RDS(on) 1.6Ω 1.6Ω ID 0.68A -0.68A CHANNEL N P HEXFET® MOSFET technology is the key to International


    Original     		91664B IRFG5210 MO-036AB) 276mH, 475mH, -200V, MO-036AB 68A diode MJ 68A IRFG5210 MO-036AB 4.5v to 100v input regulator PDF

    CSD75203W1015

    Abstract: No abstract text available
    Text: CSD75205W1015 www.ti.com. SLPS222 – OCTOBER 2009 P-Channel NexFET Power MOSFET


    Original     		CSD75205W1015 SLPS222 CSD75203W1015 PDF

    P0101-01

    Abstract: No abstract text available
    Text: CSD75301W1015 www.ti.com. SLPS212 – AUGUST 2009 P-Channel NexFET Power MOSFET


    Original     		CSD75301W1015 SLPS212 P0101-01 PDF

    CSD25301W1015

    Abstract: G003
    Text: CSD25301W1015 www.ti.com. SLPS210 – AUGUST 2009 P-Channel NexFET Power MOSFET


    Original     		CSD25301W1015 SLPS210 CSD25301W1015 G003 PDF

    CSD25301W1015

    Abstract: G003
    Text: CSD25301W1015 www.ti.com. SLPS210 – AUGUST 2009 P-Channel NexFET Power MOSFET


    Original     		CSD25301W1015 SLPS210 CSD25301W1015 G003 PDF

    ja-245

    Abstract: CSD23201W10 G003
    Text: CSD23201W10 www.ti.com. SLPS209 – AUGUST 2009 P-Channel NexFET Power MOSFET


    Original     		CSD23201W10 SLPS209 ja-245 CSD23201W10 G003 PDF

    CSD75205W1015

    Abstract: No abstract text available
    Text: CSD75205W1015 www.ti.com. SLPS222 – OCTOBER 2009 P-Channel NexFET Power MOSFET


    Original     		CSD75205W1015 SLPS222 CSD75205W1015 PDF

    M-0160

    Abstract: CSD75205W1015 CSD75203W1015
    Text: CSD75205W1015 www.ti.com. SLPS222 – OCTOBER 2009 P-Channel NexFET Power MOSFET


    Original     		CSD75205W1015 SLPS222 M-0160 CSD75205W1015 CSD75203W1015 PDF

    CSD75205W1015

    Abstract: No abstract text available
    Text: CSD75205W1015 www.ti.com. SLPS222 – OCTOBER 2009 P-Channel NexFET Power MOSFET


    Original     		CSD75205W1015 SLPS222 CSD75205W1015 PDF

    Untitled

    Abstract: No abstract text available
    Text: CSD75205W1015 www.ti.com. SLPS222 – OCTOBER 2009 P-Channel NexFET Power MOSFET


    Original     		CSD75205W1015 SLPS222 PDF

    Untitled

    Abstract: No abstract text available
    Text: CSD25301W1015 www.ti.com. SLPS210 – AUGUST 2009 P-Channel NexFET Power MOSFET


    Original     		CSD25301W1015 SLPS210 PDF

    CSD23201W10

    Abstract: No abstract text available
    Text: CSD23201W10 www.ti.com. SLPS209 – AUGUST 2009 P-Channel NexFET Power MOSFET


    Original     		CSD23201W10 SLPS209 CSD23201W10 PDF

    100V Single P-Channel HEXFET MOSFET

    Abstract: 12v 10A dc motor mosfet driver
    Text: PD-90436G IRFG6110 JANTX2N7336 JANTXV2N7336 POWER MOSFET REF:MIL-PRF-19500/598 THRU-HOLE MO-036AB 100V, Combination 2N-2P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFG6110 IRFG6110 RDS(on) 0.7Ω 1.4Ω ID CHANNEL 1.0A N -0.75A P HEXFET® MOSFET technology is the key to International


    Original     		PD-90436G IRFG6110 JANTX2N7336 JANTXV2N7336 MIL-PRF-19500/598 MO-036AB) 150mH, 266mH, 100V Single P-Channel HEXFET MOSFET 12v 10A dc motor mosfet driver PDF

    CSD75202W15

    Abstract: CSD75202
    Text: CSD75204W15 www.ti.com. SLPS221 – OCTOBER 2009 Dual P-Channel NexFET Power MOSFET


    Original     		CSD75204W15 SLPS221 CSD75202W15 CSD75202 PDF