f10p03l
Abstract: TC227 25e-2 RFD10P03L RFD10P03LSM RFD10P03LSM9A RFP10P03L
Text: RFD10P03L, RFD10P03LSM, RFP10P03L Data Sheet July 1999 10A, 30V, 0.200 Ohm, Logic Level, P-Channel Power MOSFET Title FD1 03L, D10 3LS eyrds ter- 3515.2 Features • 10A, 30V These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process,
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RFD10P03L,
RFD10P03LSM,
RFP10P03L
TA49205.
f10p03l
TC227
25e-2
RFD10P03L
RFD10P03LSM
RFD10P03LSM9A
RFP10P03L
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f10p03l
Abstract: TC227 RFD10P03LSM RFD10P03L RFD10P03LSM9A RFP10P03L Logic Level p-Channel Power MOSFET 10P03L
Text: RFD10P03L, RFD10P03LSM, RFP10P03L Data Sheet July 1999 10A, 30V, 0.200 Ohm, Logic Level, P-Channel Power MOSFET 3515.2 Features • 10A, 30V These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits,
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RFD10P03L,
RFD10P03LSM,
RFP10P03L
TA49205.
f10p03l
TC227
RFD10P03LSM
RFD10P03L
RFD10P03LSM9A
RFP10P03L
Logic Level p-Channel Power MOSFET
10P03L
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f10p03l
Abstract: RFD10P03LSM RFD10P03L RFD10P03LSM9A RFP10P03L Logic Level p-Channel Power MOSFET TC227
Text: RFD10P03L, RFD10P03LSM, RFP10P03L S E M I C O N D U C T O R 10A, 30V, 0.200Ω, Logic Level P-Channel Power MOSFET May 1997 Features Description • 10A, 30V These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses
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RFD10P03L,
RFD10P03LSM,
RFP10P03L
1-800-4-HARRIS
f10p03l
RFD10P03LSM
RFD10P03L
RFD10P03LSM9A
RFP10P03L
Logic Level p-Channel Power MOSFET
TC227
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT100P03 Power MOSFET 100A, 30V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT100P03 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance. It can also withstand high
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UTT100P03
UTT100P03
UTT100P03L-TA3-T
UTT100P03G-TA3-T
QW-R502-697
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f10p03l
Abstract: 10P03L 10p03 Logic Level p-Channel Power MOSFET TA49205 RFD10P03L RFD10P03LSM RFD10P03LSM9A RFP10P03L n097
Text: RFD10P03L, RFD10P03LSM, RFP10P03L Data Sheet January 2002 10A, 30V, 0.200 Ohm, Logic Level, P-Channel Power MOSFET Features These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits,
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RFD10P03L,
RFD10P03LSM,
RFP10P03L
TA49205.
f10p03l
10P03L
10p03
Logic Level p-Channel Power MOSFET
TA49205
RFD10P03L
RFD10P03LSM
RFD10P03LSM9A
RFP10P03L
n097
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Untitled
Abstract: No abstract text available
Text: AP4407GS/P-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower On-resistance D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free BVDSS -30V RDS ON 14mΩ
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AP4407GS/P-HF
O-263
AP4407GP)
100us
100ms
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Untitled
Abstract: No abstract text available
Text: AP6679GS/P RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Lower On-resistance D Simple Drive Requirement Fast Switching Characteristic G BVDSS -30V RDS ON 9m ID -75A S Description Advanced Power MOSFETs from APEC provide the
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AP6679GS/P
O-263
AP6679GP)
O-220
6679GP
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Untitled
Abstract: No abstract text available
Text: AP6679GS/P-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower On-resistance D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic G ▼ RoHS Compliant BVDSS -30V RDS ON 9mΩ ID -75A S Description
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AP6679GS/P-HF
O-263
AP6679GP)
100us
100ms
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low threshold mosfet p-channel TO-220
Abstract: ut70p03 UT70P03L-TM3-T
Text: UNISONIC TECHNOLOGIES CO., LTD UT70P03 Power MOSFET 75A, 30V P-CHANNEL POWER MOSFET 1 DESCRIPTION The UT70P03 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in
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UT70P03
O-220
UT70P03
O-220F
O-251
O-252
UT70P03L-TA3-T
UT70P03G-TA3-T
UT70P03L-TF3-T
UT70P03G-TF3-T
low threshold mosfet p-channel TO-220
UT70P03L-TM3-T
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AP6679P
Abstract: 24AVG
Text: AP6679S/P Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower On-resistance D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic G BVDSS -30V RDS ON 9mΩ ID -75A S Description The Advanced Power MOSFETs from APEC provide the
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AP6679S/P
O-263
AP6679P)
100ms
AP6679P
24AVG
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Untitled
Abstract: No abstract text available
Text: AP4407S/P Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Lower On-resistance D Simple Drive Requirement Fast Switching Characteristic BVDSS -30V RDS ON 14m ID G -50A S Description The Advanced Power MOSFETs from APEC provide the
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AP4407S/P
O-263
AP4407P)
100us
100ms
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Untitled
Abstract: No abstract text available
Text: AP6679GS/P-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Lower On-resistance D Simple Drive Requirement Fast Switching Characteristic G BVDSS -30V RDS ON 9m ID -75A RoHS Compliant S Description Advanced Power MOSFETs from APEC provide the
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AP6679GS/P-HF
O-263
AP6679GP)
100us
100ms
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Untitled
Abstract: No abstract text available
Text: AP4407GS/P RoHS-compliat Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Lower On-resistance BVDSS D -30V RDS ON Simple Drive Requirement Fast Switching Characteristic ID G 14m -50A S Description Advanced Power MOSFETs from APEC provide the designer with
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AP4407GS/P
O-263
AP4407GP)
O-220
4407GP
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AP4407P
Abstract: No abstract text available
Text: AP4407S/P Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower On-resistance D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic BVDSS -30V RDS ON 14mΩ ID G -50A S Description The Advanced Power MOSFETs from APEC provide the
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AP4407S/P
O-263
AP4407P)
100us
100ms
AP4407P
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Untitled
Abstract: No abstract text available
Text: AP4407I-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Lower On-resistance BVDSS D RDS ON Simple Drive Requirement Fast Switching Characteristic ID G -30V 14m -40A RoHS Compliant & Halogen-Free S Description
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AP4407I-HF
O-220CFM
100us
100ms
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Untitled
Abstract: No abstract text available
Text: AP6679BGI-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Low On-resistance D Simple Drive Requirement Fast Switching Characteristic G BVDSS -30V RDS ON 9m ID -48A RoHS Compliant & Halogen-Free S Description
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AP6679BGI-HF
O-220CFM
100ms
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Untitled
Abstract: No abstract text available
Text: AP4433GI-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET D Low On-resistance Simple Drive Requirement Fast Switching Characteristic RoHS Compliant & Halogen-Free G BVDSS -30V RDS ON 32m ID -21A S Description
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AP4433GI-HF
AP4433
O-220CFM
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Untitled
Abstract: No abstract text available
Text: AP40P03GI-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Lower On-resistance BVDSS D RDS ON Simple Drive Requirement Fast Switching Characteristic ID G -30V 28m -30A RoHS Compliant & Halogen-Free S Description
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AP40P03GI-HF
O-220CFM
100us
100ms
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6679GP
Abstract: 6679GS 6679G L2AA 6679 ap6679g
Text: AP6679GS/P RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower On-resistance D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic G BVDSS -30V RDS ON 9mΩ ID -75A S Description Advanced Power MOSFETs from APEC provide the
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AP6679GS/P
O-263
AP6679GP)
O-220
6679GP
6679GP
6679GS
6679G
L2AA
6679
ap6679g
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PDF
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Untitled
Abstract: No abstract text available
Text: AP6679BGP-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-resistance D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free G BVDSS -30V RDS ON 9mΩ ID
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AP6679BGP-HF
O-220
100us
100ms
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PDF
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Untitled
Abstract: No abstract text available
Text: AP4407I-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower On-resistance D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free BVDSS -30V RDS ON 14mΩ ID
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AP4407I-HF
O-220CFM
100us
100ms
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PDF
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AP85T03GP
Abstract: No abstract text available
Text: AP85T03GS/P-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Low Gate Charge D Simple Drive Requirement Fast Switching Characteristic RoHS Compliant & Halogen-Free G BVDSS 30V RDS ON 6m ID 75A S Description
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AP85T03GS/P-HF
O-263
AP85T03GP)
O-220
100us
100ms
AP85T03GP
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PDF
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Untitled
Abstract: No abstract text available
Text: AP6679GI RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Low Gate Charge D Single Drive Requirement Lower On-resistance G BVDSS -30V RDS ON 9m ID -48A S Description Advanced Power MOSFETs from APEC provide the
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AP6679GI
O-220CFM
O-220CFM
6679GI
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F10P03L
Abstract: 10P03L p-channel mosfet BL Harris Semiconductor Integrated Circuits N10T TC227 RFD10P03L RFD10P03LSM RFD10P03LSM9A RFP10P03L
Text: RFD10P03L, RFD10P03LSM, RFP10P03L HARRIS S E M I C O N D U C T O R 10A, 30V, 0.200&, Logic Level P-Channel Power MOSFET May 1997 Features Description • 10A, 30V These products are P-Channel power MOSFETs manufac tured using the MegaFET process. This process, which uses
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OCR Scan
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RFD10P03L,
RFD10P03LSM,
RFP10P03L
1-800-4-HARRIS
F10P03L
10P03L
p-channel mosfet BL
Harris Semiconductor Integrated Circuits
N10T
TC227
RFD10P03L
RFD10P03LSM
RFD10P03LSM9A
RFP10P03L
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