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    P-CHANNEL MOSFET TRANSISTOR LOW POWER Search Results

    P-CHANNEL MOSFET TRANSISTOR LOW POWER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    PQU650-12P Murata Manufacturing Co Ltd AC/DC 650W, 6”X4” U-CHANNEL, 12V O/P Visit Murata Manufacturing Co Ltd
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    P-CHANNEL MOSFET TRANSISTOR LOW POWER Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT3419 Power MOSFET 20V, 3.5A P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR  DESCRIPTION The UTC UT3419 is a P-channel enhancement MOSFET providing designers with excellent RDS ON , low gate charge. The gate voltage is as low as 2.5V.


    Original     		UT3419 UT3419 UT3419L-AE3-R UT3419G-AE3-R OT-23 QW-R502-391 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT3419 Power MOSFET 20V, 3.5A P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR  DESCRIPTION The UTC UT3419 is a P-channel enhancement MOSFET providing designers with excellent RDS ON , low gate charge. The gate voltage is as low as 2.5V.


    Original     		UT3419 UT3419 UT3419G-AE2-R UT3419G-AE3-R OT-23-3 OT-23 QW-R502-391 PDF

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet 1.5V Drive Pch MOSFET + PNP TRANSISTOR QS8F2  Structure Silicon P-channel MOSFET/ PNP TRANSISTOR Dimensions Unit : mm TSMT8 (8) (7) (6) (5) Features 1) Low on-resistance. 2) High power package(TSMT8). 3) Low voltage drive(1.5V drive).


    Original     		Pw10s, R1120A PDF

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet 1.5V Drive Pch MOSFET + PNP TRANSISTOR QS8F2  Structure Silicon P-channel MOSFET/ PNP TRANSISTOR Dimensions Unit : mm TSMT8 (8) (7) (6) (5) Features 1) Low on-resistance. 2) High power package(TSMT8). 3) Low voltage drive(1.5V drive).


    Original     		Pw10s, R1120A PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UF640-P Power MOSFET 18A, 200V, 0.18OHM, N-CHANNEL POWER MOSFET  DESCRIPTION These kinds of n-channel power MOSFET field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer


    Original     		UF640-P 18OHM, UF640-P O-220 QW-R502-A17 PDF

    Untitled

    Abstract: No abstract text available
    Text: QS8F2 Data Sheet 1.5V Drive Pch MOSFET + PNP TRANSISTOR QS8F2  Structure Silicon P-channel MOSFET/ PNP TRANSISTOR Dimensions Unit : mm TSMT8 (8) (7) (6) (5) Features 1) Low on-resistance. 2) High power package(TSMT8). 3) Low voltage drive(1.5V drive).


    Original     		Pw10s, R1120A PDF

    UT3419

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT3419 Power MOSFET 20V, 3.5A P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR „ DESCRIPTION The UTC UT3419 is a P-channel enhancement MOSFET providing designers with excellent RDS ON , low gate charge. The gate voltage is as low as 2.5V. It is ESD protection.


    Original     		UT3419 UT3419 UT3419L-AE3-R UT3419G-AE3-R OT-23 QW-R502-391 PDF

    UT3419

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT3419 Power MOSFET 20V, 3.5A P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR „ DESCRIPTION The UTC UT3419 is a P-channel enhancement MOSFET providing designers with excellent RDS ON , low gate charge. The gate voltage is as low as 2.5V. It is ESD protection.


    Original     		UT3419 UT3419 UT3419L-AE3-R UT3419G-AE3-R OT-23 QW-R502-391 PDF

    Untitled

    Abstract: No abstract text available
    Text: SUM201MN P-Channel MOSFET + PNP BJT Integrated Power MOSFET with PNP Low VCE sat Switching Transistor DFN-8 This integrated device represents a new level of safety and board−space reduction by combining the 20V P−Channel FET with a PNP Silicon Low VCE(sat) switching transistor. This newly integrated


    Original     		SUM201MN KSD-T6T002-001 PDF

    Untitled

    Abstract: No abstract text available
    Text: SUM201MN P-Channel MOSFET + PNP BJT Integrated Power MOSFET with PNP Low VCE sat Switching Transistor DFN-8 This integrated device represents a new level of safety and board−space reduction by combining the 20V P−Channel FET with a PNP Silicon Low VCE(sat) switching transistor. This newly integrated


    Original     		SUM201MN KSD-T6T002-000 PDF

    Logic Level Gate Drive mosfet

    Abstract: BJT IC Vce BJT pnp 45V mosfet 400 V 10A bjt 50a BJT IC Vce 5v
    Text: SUM201MN P-Channel MOSFET + PNP BJT Integrated Power MOSFET with PNP Low VCE sat Switching Transistor DFN-8 This integrated device represents a new level of safety and board−space reduction by combining the 20V P−Channel FET with a PNP Silicon Low VCE(sat) switching transistor. This newly integrated


    Original     		SUM201MN KSD-T6T002-000 Logic Level Gate Drive mosfet BJT IC Vce BJT pnp 45V mosfet 400 V 10A bjt 50a BJT IC Vce 5v PDF

    417 mosfet

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT5504 Power MOSFET P-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR „ DESCRIPTION The UTC UT5504 is a P-channel enhancement mode power MOSFET, providing customers fast switching, ruggedized device design, low on-resistance and cost-effectiveness by UTC’s


    Original     		UT5504 UT5504 O-252 UT5504L-TN3-R UT5504G-TN3-R UT5504Lntarily, QW-R502-417 417 mosfet PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT5504 Power MOSFET P-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR „ DESCRIPTION The UTC UT5504 is a P-channel enhancement mode power MOSFET, providing customers fast switching, ruggedized device design, low on-resistance and cost-effectiveness by UTC’s


    Original     		UT5504 UT5504 O-251 O-252 UT5504L-TM3-T QW-R502-417 PDF

    UT5504

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT5504 Power MOSFET P-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR  DESCRIPTION The UTC UT5504 is a P-channel enhancement mode power MOSFET, providing customers fast switching, ruggedized device design, low on-resistance and cost-effectiveness by UTC’s


    Original     		UT5504 UT5504 UT5504L-TM3-T UT5504G-TM3-T UT5504L-TN3-R UT5504G-TN3-R UT5504G-S08-R QW-R502-417 PDF

    Untitled

    Abstract: No abstract text available
    Text: SUM202MN P-Channel MOSFET + PNP BJT Integrated Power MOSFET with PNP Low VCE sat Switching Transistor DFN-8 This integrated device represents a new level of safety and 8 board−space reduction by combining the 20V P−Channel FET with a 1 PNP Silicon Low VCE(sat) switching transistor. This newly integrated


    Original     		SUM202MN KSD-T6T001-001 PDF

    Untitled

    Abstract: No abstract text available
    Text: SUM202MN P-Channel MOSFET + PNP BJT Integrated Power MOSFET with PNP Low VCE sat Switching Transistor DFN-8 This integrated device represents a new level of safety and 8 board−space reduction by combining the 20V P−Channel FET with a 1 PNP Silicon Low VCE(sat) switching transistor. This newly integrated


    Original     		SUM202MN KSD-T6T001-002 PDF

    Untitled

    Abstract: No abstract text available
    Text: SUM202MN P-Channel MOSFET + PNP BJT Integrated Power MOSFET with PNP Low VCE sat Switching Transistor DFN-8 8 This integrated device represents a new level of safety and board−space reduction by combining the 20V P−Channel FET with a 1 PNP Silicon Low VCE(sat) switching transistor. This newly integrated


    Original     		SUM202MN KSD-T6T001-001 PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ687 SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION The 2SJ687 is P-channel MOSFET device and a excellent switch that can be driven by a low power-supply voltage. FEATURES • Low on-state resistance RDS on 1 = 7.0 mΩ MAX. (VGS = −4.5 V, ID = −10 A)


    Original     		2SJ687 2SJ687 2SJ687-ZK-E1-AY 2SJ687-ZK-E2-AY O-252 PDF

    Untitled

    Abstract: No abstract text available
    Text: TC2320 N- and P-Channel Enhancement-Mode Dual MOSFET Features General Description The Supertex TC2320 consists of a high voltage, low threshold N- and P-channel MOSFET in an 8-Lead SOIC package. This low threshold enhancement-mode normallyoff transistor utilizes an advanced vertical DMOS structure


    Original     		TC2320 TC2320 DSFP-TC2320 B122208 PDF

    2SJ687

    Abstract: 2sj687-zk-e1-ay d1871 2SJ687-ZK-E2-AY
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ687 SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION The 2SJ687 is P-channel MOSFET device and a excellent switch that can be driven by a low power-supply voltage. FEATURES • Low on-state resistance RDS on 1 = 7.0 mΩ MAX. (VGS = −4.5 V, ID = −10 A)


    Original     		2SJ687 2SJ687 2SJ687-ZK-E1-AY 2SJ687-ZK-E2-AY O-252 O-252) 2sj687-zk-e1-ay d1871 2SJ687-ZK-E2-AY PDF

    Untitled

    Abstract: No abstract text available
    Text: CMRDM7590 SURFACE MOUNT DUAL P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMRDM7590 is an Enhancement-mode Dual P-Channel Field Effect Transistor designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low


    Original     		CMRDM7590 CMRDM7590 OT-963 125mA 200mA PDF

    MOSFET

    Abstract: No abstract text available
    Text: ACE1500B P-Channel Enhancement Mode Field Effect Transistor Description The ACE1500B is P-Channel enhancement mode power MOSFET which is produced with high cell density and DMOS trench technology .This device particularly suits low voltage applications, especially


    Original     		ACE1500B ACE1500B MOSFET PDF

    Untitled

    Abstract: No abstract text available
    Text: DMP2104LP P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT Features • • • • • • • • • • P-Channel MOSFET Very Low On-Resistance Very Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage


    Original     		DMP2104LP AEC-Q101 DFN1411-3 DFN1411-3 DS31091 PDF

    DS310-91

    Abstract: No abstract text available
    Text: DMP2104LP P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT Features • • • • • • • • • • P-Channel MOSFET Very Low On-Resistance Very Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage


    Original     		DMP2104LP AEC-Q101 DFN1411-3 DFN1411-3 DS31091 DS310-91 PDF