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    P-CHANNEL N-CHANNEL POWER MOSFET ENHANCEMENT Search Results

    P-CHANNEL N-CHANNEL POWER MOSFET ENHANCEMENT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    PQU650-12P Murata Manufacturing Co Ltd AC/DC 650W, 6”X4” U-CHANNEL, 12V O/P Visit Murata Manufacturing Co Ltd
    MGN1S1208MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-8V GAN Visit Murata Manufacturing Co Ltd
    MGN1D120603MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-6/-3V GAN Visit Murata Manufacturing Co Ltd
    MGN1S1212MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-12V GAN Visit Murata Manufacturing Co Ltd
    MGN1S0508MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 5-8V GAN Visit Murata Manufacturing Co Ltd

    P-CHANNEL N-CHANNEL POWER MOSFET ENHANCEMENT Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MTC3585G6

    Abstract: MTC3585
    Text: Spec. No. : C416G6 Issued Date : 2007.07.13 Revised Date :2009.03.16 Page No. : 1/8 CYStech Electronics Corp. N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTC3585G6 Description The MTC3585G6 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single


    Original     		C416G6 MTC3585G6 MTC3585G6 UL94V-0 MTC3585 PDF

    Untitled

    Abstract: No abstract text available
    Text: FDS8958B Dual N & P-Channel PowerTrench MOSFET Q1-N-Channel: 30 V, 6.4 A, 26 mΩ Q2-P-Channel: -30 V, -4.5 A, 51 mΩ Features General Description Q1: N-Channel These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor's


    Original     		FDS8958B com/dwg/M0/M08A PDF

    single P-Channel mosfet sot-26

    Abstract: VGS-12V N-Channel mosfet sot-26
    Text: Spec. No. : C416N6 Issued Date : 2007.07.12 Revised Date : Page No. : 1/8 CYStech Electronics Corp. N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTC3585N6 Description The MTC3585N6 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single


    Original     		C416N6 MTC3585N6 MTC3585N6 OT-26 OT-26 MTC358ny UL94V-0 single P-Channel mosfet sot-26 VGS-12V N-Channel mosfet sot-26 PDF

    FDS8958B

    Abstract: CQ238
    Text: FDS8958B Dual N & P-Channel PowerTrench MOSFET Q1-N-Channel: 30 V, 6.4 A, 26 mΩ Q2-P-Channel: -30 V, -4.5 A, 51 mΩ Features General Description Q1: N-Channel These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor's


    Original     		FDS8958B FDS8958B CQ238 PDF

    Untitled

    Abstract: No abstract text available
    Text: FDS8958B Dual N & P-Channel PowerTrench MOSFET Q1-N-Channel: 30 V, 6.4 A, 26 mΩ Q2-P-Channel: -30 V, -4.5 A, 51 mΩ Features General Description Q1: N-Channel These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor's


    Original     		FDS8958B FDS8958B PDF

    5806SS

    Abstract: DIODE vsd N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET 5806-S
    Text: CYStech Electronics Corp. Spec. No. : C407Q8 Issued Date : 2008.12.02 Revised Date : Page No. : 1/9 N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTC5806Q8 Description The MTC5806Q8 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single SOP-8


    Original     		C407Q8 MTC5806Q8 MTC5806Q8 UL94V-0 5806SS DIODE vsd N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET 5806-S PDF

    4503ss

    Abstract: 24v 6A mosfet MTC4503Q8 4503ss equivalent 24V 1A mosfet 4503s
    Text: CYStech Electronics Corp. Spec. No. : C384Q8 Issued Date : 2007.06.13 Revised Date : Page No. : 1/8 N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTC4503Q8 Description The MTC4503Q8 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single SOP-8


    Original     		C384Q8 MTC4503Q8 MTC4503Q8 UL94V-0 4503ss 24v 6A mosfet 4503ss equivalent 24V 1A mosfet 4503s PDF

    4501ss

    Abstract: MTC4501Q8 C385Q8 CYStech Electronics N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET 4501s
    Text: CYStech Electronics Corp. Spec. No. : C385Q8 Issued Date : 2007.06.13 Revised Date : Page No. : 1/10 N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTC4501Q8 Description The MTC4501Q8 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single SOP-8


    Original     		C385Q8 MTC4501Q8 MTC4501Q8 UL94V-0 4501ss C385Q8 CYStech Electronics N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET 4501s PDF

    Untitled

    Abstract: No abstract text available
    Text: FDD8426H Dual N & P-Channel PowerTrench MOSFET N-Channel: 40 V, 12 A, 12 mΩ P-Channel: -40 V, -10 A, 17 mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement mode Power ̈ Max rDS on = 12 mΩ at VGS = 10 V, ID = 12 A


    Original     		FDD8426H PDF

    cq213

    Abstract: FDD8426H
    Text: FDD8426H Dual N & P-Channel PowerTrench MOSFET N-Channel: 40 V, 12 A, 12 mΩ P-Channel: -40 V, -10 A, 17 mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement mode Power „ Max rDS on = 12 mΩ at VGS = 10 V, ID = 12 A


    Original     		FDD8426H cq213 FDD8426H PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 15N25-P Preliminary Power MOSFET 15A, 250V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 15N25-P is an N-channel enhancement MOSFET using UTC’s advanced technology to provide the customers with perfect RDS ON , high switching speed, high current capacity and low gate


    Original     		15N25-P 15N25-P 15N25L-TF1-T 15N25G-TF1-T 15Nat QW-R502-A24 PDF

    PC-H-600

    Abstract: No abstract text available
    Text: LT4542AC N- and P-Channel 30-V Power MOSFET GENERAL DESCRIPTION FEATURES The LT4542AC is the N-Channel and P-Channel logic enhancement mode ● 30V/0.5A,RDS ON =25mΩ@VGS=10V (N-Ch) power field effect transistors are produced using high cell density,DMOS


    Original     		LT4542AC LT4542AC -30V/-0 PC-H-600 PDF

    Untitled

    Abstract: No abstract text available
    Text: LT4542AC N- and P-Channel 30-V Power MOSFET GENERAL DESCRIPTION FEATURES The LT4542AC is the N-Channel and P-Channel logic enhancement mode ● 30V/6.7A,RDS ON =25mΩ@VGS=10V (N-Ch) power field effect transistors are produced using high cell density,DMOS


    Original     		LT4542AC LT4542AC -30V/-6 -30V/-0 PDF

    Untitled

    Abstract: No abstract text available
    Text: JANSR2N7298 Formerly FRF450R4 Semiconductor Data Sheet Radiation Hardened, N-Channel Power MOSFET The Harris Semiconductor Sector has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Channel and P-Channel enhancement types with ratings


    OCR Scan     		JANSR2N7298 FRF450R4 1000K 1-800-4-HARRIS PDF

    4505ss

    Abstract: A1770 24V 1A mosfet
    Text: CYStech Electronics Corp. Spec. No. : C439Q8 Issued Date : 2009.02.19 Revised Date : Page No. : 1/8 N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTC4505Q8 BVDSS ID RDSON max N-CH 30V 10A 14mΩ P-CH -30V -8.4A 20mΩ Description The MTC4505Q8 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single SOP-8


    Original     		C439Q8 MTC4505Q8 MTC4505Q8 UL94V-0 4505ss A1770 24V 1A mosfet PDF

    list of P channel power mosfet

    Abstract: Power MOSFET p-Channel n-channel dual UTM4052 40v 7.5a P-Channel N-Channel
    Text: UNISONIC TECHNOLOGIES CO., LTD UTM4052 Power MOSFET DUAL ENHANCEMENT MODE N-CHANNEL/P-CHANNEL „ FEATURES * N-Channel: 40V/7.5A RDS(ON) = 30 mΩ (typ.) @ VGS =10V RDS(ON) = 46 mΩ(typ.) @ VGS= 5V * P-Channel: -40V/-6A RDS(ON) = 45 mΩ(typ.) @ VGS= -10V


    Original     		UTM4052 -40V/-6A UTM4052L UTM4052-S08-R UTM4052L-S08-R UTM4052-S08-T UTM4052L-S08-T QW-R502-137 list of P channel power mosfet Power MOSFET p-Channel n-channel dual UTM4052 40v 7.5a P-Channel N-Channel PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UTM4052 Power MOSFET DUAL ENHANCEMENT MODE N-CHANNEL/P-CHANNEL FEATURES „ SOP-8 * N-Channel: 40V/7.5A RDS(ON) = 30 mΩ (typ.) @VGS =10V RDS(ON) = 46 mΩ(typ.) @ VGS= 5V * P-Channel: -40V/-6A RDS(ON) = 45 mΩ(typ.) @ VGS= -10V


    Original     		UTM4052 -40V/-6A O-252-4 UTM4052L-S08-R UTM4052G-S08-R UTM4052L-TN4-T UTM4052G-TN4-T QW-R502-137 PDF

    40v 7.5a P-Channel N-Channel

    Abstract: UTM4052 TO-252-4
    Text: UNISONIC TECHNOLOGIES CO., LTD UTM4052 Power MOSFET DUAL ENHANCEMENT MODE N-CHANNEL/P-CHANNEL FEATURES „ SOP-8 * N-Channel: 40V/7.5A RDS(ON) = 30 mΩ (typ.) @VGS =10V RDS(ON) = 46 mΩ(typ.) @ VGS= 5V * P-Channel: -40V/-6A RDS(ON) = 45 mΩ(typ.) @ VGS= -10V


    Original     		UTM4052 -40V/-6A O-252-4 UTM4052L-S08-R UTM4052G-S08-R UTM4052L-TN4-T UTM4052G-TN4-T QW-R502-137 40v 7.5a P-Channel N-Channel UTM4052 TO-252-4 PDF

    4501ss

    Abstract: rd15 WTK4501 RD 15 4501s
    Text: WTK4501 N AND P-Channel Enhancement Mode POWER MOSFET N-CHANNEL DRAIN SOURCE VOLTAGE 30 VOLTAGE DRAIN CURRENT 7 AMPERES 7,8 DRAIN P b Lead Pb -Free 2 GATE 5,6 DRAIN P-CHANNEL DRAIN SOURCE VOLTAGE -30 VOLTAGE DRAIN CURRENT -5.3 AMPERES 3 SOURCE 1 1 SOURCE Features:


    Original     		WTK4501 07-May-07 4501ss rd15 WTK4501 RD 15 4501s PDF

    MOSFET dual SOP-8

    Abstract: 40v 7.5a P-Channel N-Channel To-252-4 DIODE 2524 UTM4052 2524
    Text: UNISONIC TECHNOLOGIES CO., LTD UTM4052 Power MOSFET DUAL ENHANCEMENT MODE N-CHANNEL/P-CHANNEL FEATURES „ SOP-8 * N-Channel: 40V/7.5A RDS(ON) = 30 mΩ (typ.) @VGS =10V RDS(ON) = 46 mΩ(typ.) @ VGS= 5V * P-Channel: -40V/-6A RDS(ON) = 45 mΩ(typ.) @ VGS= -10V


    Original     		UTM4052 -40V/-6A O-252-4 UTM4052L-S08-R UTM4052G-S08-R UTM4052L-TN4-R UTM4052G-TN4-R UTM4052L-TN4-T UTM4052G-TN4-T MOSFET dual SOP-8 40v 7.5a P-Channel N-Channel To-252-4 DIODE 2524 UTM4052 2524 PDF

    RD10

    Abstract: WTV3585
    Text: WTV3585 N AND P-Channel Enhancement Mode POWER MOSFET N-CHANNEL DRAIN SOURCE VOLTAGE 20 VOLTAGE DRAIN CURRENT 3.5 AMPERES 6 DRAIN P b Lead Pb -Free 1 GATE P-CHANNEL DRAIN SOURCE VOLTAGE -20 VOLTAGE DRAIN CURRENT -2.5 AMPERES 5 SOURCE Features: 4 DRAIN * Low Gate change


    Original     		WTV3585 03-Apr-07 RD10 WTV3585 PDF

    MLP832

    Abstract: ZXMP62M832 ZXMP62M832TA
    Text: ZXMP62M832 MPPS Miniature Package Power Solutions DUAL 20V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY P-Channel V BR DSS = -20V; RDS(ON) = 0.6 ; ID= -1.0A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP(Micro Leaded Package) outline this dual 30V N channel Trench MOSFET utilizes a unique structure


    Original     		ZXMP62M832 MLP832 ZXMP62M832 ZXMP62M832TA PDF

    Untitled

    Abstract: No abstract text available
    Text: WTV3585 N AND P-Channel Enhancement Mode POWER MOSFET N-CHANNEL DRAIN SOURCE VOLTAGE 20 VOLTAGE DRAIN CURRENT 3.5 AMPERES 6 DRAIN P b Lead Pb -Free 1 GATE P-CHANNEL DRAIN SOURCE VOLTAGE -20 VOLTAGE DRAIN CURRENT -2.5 AMPERES 5 SOURCE Features: 4 DRAIN * Low Gate change


    Original     		WTV3585 OT-26 03-Apr-07 PDF

    AUIRF7319Q

    Abstract: 96364B 8763A
    Text: PD - 96364B AUTOMOTIVE MOSFET AUIRF7319Q HEXFET Power MOSFET Features l l l l l l l Advanced Planar Technology Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated Automotive [Q101] Qualified* Lead-Free, RoHS Compliant S1 N-CHANNEL MOSFET


    Original     		96364B AUIRF7319Q AUIRF7319Q 96364B 8763A PDF